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    • 9. 发明授权
    • Laser processing method
    • 激光加工方法
    • US08877612B2
    • 2014-11-04
    • US13643424
    • 2011-06-03
    • Yoshinori Abe
    • Yoshinori Abe
    • H01L21/00B23K26/08B23K26/40B23K26/06B28D5/00H01L21/67B23K26/00H01L33/00
    • B28D5/0011B23K26/0622B23K26/0823B23K26/0853B23K26/40B23K26/53B23K2101/40B23K2103/50H01L21/67092H01L33/0095
    • In a modified region forming step, an element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) of a wafer substrate (11) is irradiated with laser light (64) from the substrate back surface (11b) of the substrate, thereby forming the following inside the substrate: first and third modified regions (L1) and (L3) oriented in a y-direction (corresponding to a first direction) that is parallel to the surfaces of the substrate; and second and fourth modified regions (L2) and (L4) oriented in an x-direction (corresponding to a second direction) that is parallel to the surfaces of the substrate and differs from the y-direction. In the step, the first modified region (L1), the second modified region (L2), the third modified region (L3) and the fourth modified region (L4) are formed at different depths from the substrate back surface of the substrate.
    • 在改质区域形成工序中,将形成在晶片基板(11)的基板前表面(11a)上的多个半导体发光元件(21)的元件群形成用基板(20)从激光(64)照射 基板的基板背面(11b),从而在基板的内部形成以下内容:在与该表面平行的y方向(相当于第一方向)上取向的第一和第三改质区域(L1)和(L3) 的基底; 以及在与基板的表面平行的x方向(相当于第二方向)取向的第二和第四变形区域(L2)和(L4),并且与y方向不同。 在该步骤中,在与基板的基板背面不同的深度形成有第一改质区域(L1),第二改质区域(L2),第三改质区域(L3)和第四改质区域(L4)。
    • 10. 发明申请
    • LASER PROCESSING METHOD
    • 激光加工方法
    • US20130040466A1
    • 2013-02-14
    • US13643424
    • 2011-06-03
    • Yoshinori Abe
    • Yoshinori Abe
    • H01L21/268
    • B28D5/0011B23K26/0622B23K26/0823B23K26/0853B23K26/40B23K26/53B23K2101/40B23K2103/50H01L21/67092H01L33/0095
    • In a modified region forming step, an element-group formation substrate (20) having plural semiconductor light emitting elements (21) formed on a substrate front surface (11a) of a wafer substrate (11) is irradiated with laser light (64) from the substrate back surface (11b) of the substrate, thereby forming the following inside the substrate: first and third modified regions (L1) and (L3) oriented in a y-direction (corresponding to a first direction) that is parallel to the surfaces of the substrate; and second and fourth modified regions (L2) and (L4) oriented in an x-direction (corresponding to a second direction) that is parallel to the surfaces of the substrate and differs from the y-direction. In the step, the first modified region (L1), the second modified region (L2), the third modified region (L3) and the fourth modified region (L4) are formed at different depths from the substrate back surface of the substrate.
    • 在改质区域形成工序中,将形成在晶片基板(11)的基板前表面(11a)上的多个半导体发光元件(21)的元件群形成用基板(20)从激光(64)照射 基板的基板背面(11b),从而在基板的内部形成以下内容:在与该表面平行的y方向(相当于第一方向)上取向的第一和第三改质区域(L1)和(L3) 的基底; 以及在与基板的表面平行的x方向(相当于第二方向)取向的第二和第四变形区域(L2)和(L4),其与y方向不同。 在该步骤中,在与基板的基板背面不同的深度形成有第一改质区域(L1),第二改质区域(L2),第三改质区域(L3)和第四改质区域(L4)。