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1. 发明授权

US06447850B1 Polycrystalline silicon thin film forming method 有权
标题翻译：多晶硅薄膜成型方法
公开(公告)号：US06447850B1
公开(公告)日：2002-09-10
申请号：US09581519
申请日：2000-08-22
申请人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
发明人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
IPC分类号： H05C100
CPC分类号： H01L31/182 , C23C16/24 , C23C16/509 , C23C16/52 , H01L21/02422 , H01L21/02532 , H01L21/0262 , Y02E10/546 , Y02P70/521
摘要： A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma. The thin film forming apparatus of a plasma CVD type includes a deposition chamber accommodating a deposition target substrate, a discharging electrode for plasma formation connected to a discharging power source, a gas supply device for supplying a gas and an exhaust device, and further includes an emission-spectrometer and a probe measuring device as well as a control portion for controlling at least one of the power supply, the gas supply and gas exhausting, for maintaining a desired state of plasma based on information detected by them.
摘要翻译：一种形成薄多晶硅膜的方法和一种薄膜形成装置，其允许在相对低的温度下以高生产率廉价地形成薄多晶硅膜。更具体地，形成薄多晶硅膜的方法和薄膜形成装置，其中控制等离子体的状态以实现一个或多个氢原子自由基（Hbeta）与发光强度SiH *的发射强度比等离子体中的自由基。等离子体CVD型薄膜形成装置包括容纳沉积靶基板的沉积室，与放电电源连接的等离子体形成用放电电极，用于供给气体的气体供给装置和排气装置，还包括：发射光谱仪和探针测量装置以及用于控制电源，气体供应和气体排出中的至少一个的控制部分，用于基于由它们检测的信息来维持期望的等离子体状态。

2. 发明授权

US06620247B2 Thin polycrystalline silicon film forming apparatus 有权
标题翻译：薄多晶硅膜成膜装置
公开(公告)号：US06620247B2
公开(公告)日：2003-09-16
申请号：US10199089
申请日：2002-07-22
申请人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
发明人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
IPC分类号： B05C1100
CPC分类号： H01L31/182 , C23C16/24 , C23C16/509 , C23C16/52 , H01L21/02422 , H01L21/02532 , H01L21/0262 , Y02E10/546 , Y02P70/521
摘要： A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma. The thin film forming apparatus of a plasma CVD type includes a deposition chamber accommodating a deposition target substrate, a discharging electrode for plasma formation connected to a discharging power source, a gas supply device for supplying a gas and an exhaust device, and further includes an emission-spectrometer and a probe measuring device as well as a control portion for controlling at least one of the power supply, the gas supply and gas exhausting, for maintaining a desired state of plasma based on information detected by them.
摘要翻译：一种形成薄多晶硅膜的方法和一种薄膜形成装置，其允许在相对低的温度下以高生产率廉价地形成薄多晶硅膜。更具体地，形成薄多晶硅膜的方法和薄膜形成装置，其中控制等离子体的状态以实现一个或多个氢原子自由基（Hbeta）与发光强度SiH *的发射强度比等离子体中的自由基。等离子体CVD型薄膜形成装置包括容纳沉积靶基板的沉积室，与放电电源连接的等离子体形成用放电电极，用于供给气体的气体供给装置和排气装置，还包括：发射光谱仪和探针测量装置以及用于控制电源，气体供应和气体排出中的至少一个的控制部分，用于基于由它们检测的信息来维持期望的等离子体状态。

3. 发明授权

US5316802A Method of forming copper film on substrate 失效
标题翻译：在基材上形成铜膜的方法
公开(公告)号：US5316802A
公开(公告)日：1994-05-31
申请号：US892378
申请日：1992-06-04
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

4. 发明授权

US5501911A Copper crystal film coated organic substrate 失效
标题翻译：铜晶体膜涂有机基材
公开(公告)号：US5501911A
公开(公告)日：1996-03-26
申请号：US65913
申请日：1993-05-25
申请人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
发明人： Akinori Ebe , Kiyoshi Ogata , Satoshi Nishiyama , Naoto Kuratani , Taizo Okazaki
IPC分类号： C23C14/20 , C23C14/22 , C30B23/02 , B32B15/08 , B32B15/20 , B05D3/06
CPC分类号： C23C14/22 , C23C14/20 , C30B23/002 , C30B23/02 , C30B29/02 , Y10S428/901 , Y10T428/24355 , Y10T428/31678 , Y10T428/31681 , Y10T428/31721
摘要： A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps/nm or more per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
摘要翻译：铜膜被覆基板包括在基板的表面上形成的基板和铜膜。铜膜在铜膜的晶体取向（111）面上的单位膜厚的X射线衍射强度为2.0cps / nm以上。通过物理气相沉积工艺在衬底上形成铜薄膜之前，用惰性气体离子照射衬底的表面来控制铜薄膜的晶体取向。通过用离子照射衬底的表面并在照射的衬底上沉积铜薄膜来形成铜薄膜。在离子照射步骤中，控制照射离子的用量的离子照射能量，使得以较少量的照射离子在铜（111）面的方向上极大地生长晶体以取向。

5. 发明授权

US08890265B2 Semiconductor device and microphone 有权
标题翻译：半导体器件和麦克风
公开(公告)号：US08890265B2
公开(公告)日：2014-11-18
申请号：US14113053
申请日：2012-08-29
申请人： Naoto Kuratani
发明人： Naoto Kuratani
IPC分类号： H01L29/84 , H01L23/04 , B81B7/00 , H01L23/552 , H04R19/04 , H01L23/00 , H04R19/00
CPC分类号： B81B7/0064 , B81B2201/0257 , H01L23/04 , H01L23/552 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014 , H01L2924/12041 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15153 , H01L2924/15192 , H01L2924/16151 , H01L2924/163 , H01L2924/3011 , H01L2924/3025 , H04R1/04 , H04R1/086 , H04R19/005 , H04R19/04 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A package is formed by vertically stacking a cover and a substrate. A microphone chip is mounted at the top surface of a concave portion provided to the cover, and a circuit element is mounted on the upper surface of the substrate. The microphone chip is connected to a pad on the lower surface of the cover by a bonding wire. The circuit element is connected to a pad on the upper surface of the substrate by a bonding wire. A cover-side joining portion in conduction with the pad on the lower surface of the cover, and a substrate-side joining portion in conduction with the pad on the upper surface of the substrate, are joined by a conductive material. A conductive layer for electromagnetic shielding is embedded inside the cover near the bonding pad and the cover-side joining portion.
摘要翻译：通过垂直堆叠盖和基板形成封装。麦克风芯片安装在设置于盖子的凹部的顶面，电路元件安装在基板的上表面上。麦克风芯片通过接合线连接到盖的下表面上的焊盘。电路元件通过接合线连接到基板的上表面上的焊盘。与盖的下表面上的焊盘导通的盖侧接合部和与基板的上表面上的焊盘导通的基板侧接合部通过导电材料接合。用于电磁屏蔽的导电层嵌入在接合焊盘和盖侧接合部分附近的盖内。

6. 发明授权

US08338950B2 Electronic component 有权
标题翻译：电子元器件
公开(公告)号：US08338950B2
公开(公告)日：2012-12-25
申请号：US12674701
申请日：2009-02-17
申请人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
发明人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
IPC分类号： H01L23/488
CPC分类号： H01L23/055 , B81B2201/0257 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/032 , H01L23/552 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/27013 , H01L2224/2919 , H01L2224/29191 , H01L2224/32014 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10158 , H01L2924/1433 , H01L2924/1461 , H01L2924/16152 , H01L2924/3025 , H01L2924/0715 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： An electronic component has a substrate, a die bonding pad provided on an upper surface of the substrate, a semiconductor element bonded onto the die bonding pad by a die bonding resin, a conductive pattern disposed adjacent to the die bonding pad, and a coating member covering the conductive pattern. At least an outer peripheral portion of a surface of the die bonding pad is made of an inorganic material. The inorganic material of the outer peripheral portion is exposed. The die bonding pad and the conductive pattern are separated by an air gap such that the coating member does not come into contact with the die bonding pad.
摘要翻译：电子部件具有基板，设置在基板的上表面的芯片接合焊盘，通过芯片接合树脂接合在芯片接合焊盘上的半导体元件，与芯片接合焊盘相邻配置的导电图案，以及涂敷部件覆盖导电图案。芯片接合焊盘的表面的至少外周部由无机材料构成。露出外周部的无机材料。芯片接合焊盘和导电图案被气隙隔开，使得涂层部件不与焊盘接合。

7. 发明申请

US20110293128A1 SEMICONDUCTOR DEVICE AND MICROPHONE 审中-公开
标题翻译：半导体器件和麦克风
公开(公告)号：US20110293128A1
公开(公告)日：2011-12-01
申请号：US13115582
申请日：2011-05-25
申请人： Naoto Kuratani , Tomofumi Maekawa
发明人： Naoto Kuratani , Tomofumi Maekawa
IPC分类号： H04R9/08
CPC分类号： H04R19/005 , B81B7/0064 , B81B2201/0257 , B81C1/0023 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/1461 , H01L2924/15153 , H01L2924/3025 , H04R19/04 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor device including a package formed by overlapping a cover and a substrate one over the other. A microphone chip is mounted on a top surface of a recess of the cover, and a circuit element is mounted on an upper surface of a recess of the substrate, where the microphone chip is positioned perpendicularly on the upper side of the circuit element. The microphone chip is connected to a bonding pad arranged on the lower surface of the cover by a bonding wire, the circuit element is connected to a bonding pad arranged on the upper surface of the substrate by a bonding wire, and a cover side joining portion conducted to the bonding pad on the lower surface of the cover and a substrate side joining portion conducted t to the bonding pad on the upper surface of the substrate are joined by a conductive material.
摘要翻译：一种半导体器件，其包括通过将盖和基板重叠在另一个上而形成的封装。麦克风芯片安装在盖的凹部的顶表面上，并且电路元件安装在基板的凹部的上表面上，其中麦克风芯片垂直于电路元件的上侧定位。麦克风芯片通过接合线连接到布置在盖的下表面上的接合焊盘，电路元件通过接合线连接到布置在基板的上表面上的接合焊盘，盖侧接合部分传导到盖的下表面上的接合焊盘和传导到衬底上表面的焊盘的衬底侧接合部分由导电材料接合。

8. 发明申请

US20130130493A1 CONNECTING PAD PRODUCING METHOD 审中-公开
标题翻译：连接生产方法
公开(公告)号：US20130130493A1
公开(公告)日：2013-05-23
申请号：US13744558
申请日：2013-01-18
申请人： Naoto Kuratani , Kazuyuki Ono , Tomofumi Maekawa
发明人： Naoto Kuratani , Kazuyuki Ono , Tomofumi Maekawa
IPC分类号： H01L23/00
CPC分类号： H01L24/03 , B81B7/007 , B81B2207/012 , B81B2207/07 , H01L21/4878 , H01L23/049 , H01L23/10 , H01L23/13 , H01L23/49833 , H01L23/552 , H01L24/05 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/04042 , H01L2224/05599 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48471 , H01L2224/49171 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/1517 , H01L2924/1617 , H01L2924/16195 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： A connecting pad producing method has a first process of projecting an insulating member in a surface of a base material such that a region where a connecting pad is formed is surrounded, a second process of forming a conductive layer in the surface of the base material such that the insulating member is coated with the conductive layer, and a third process of removing the conductive layer with which the insulating member is coated, exposing the insulating member over a whole periphery from the conductive layer, and forming the connecting pad including the conductive layer in a region surrounded by the insulating member. The conductive layer with which the insulating member is coated is removed so as not to reach the conductive layer surface in a region adjacent to the insulating member in the third process.
摘要翻译：连接垫的制造方法具有将基材的表面中的绝缘部件突出使得形成有连接焊盘的区域被包围的第一工序，在基材的表面形成导电层的第二工序，例如所述绝缘部件被所述导电层覆盖，以及去除所述绝缘部件的所述导电层被涂覆的第3工序，使所述绝缘部件从所述导电层的整个周边露出，以及形成包括所述导电层的所述连接焊盘在由绝缘构件包围的区域中。在第三工序中，除去绝缘部件的导电层，使其不与绝缘部件相邻的区域到达导电层表面。

9. 发明申请

US20120139111A1 ELECTRONIC COMPONENT 有权
标题翻译：电子元件
公开(公告)号：US20120139111A1
公开(公告)日：2012-06-07
申请号：US12674701
申请日：2009-02-17
申请人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
发明人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
IPC分类号： H01L23/488 , H01L23/12
CPC分类号： H01L23/055 , B81B2201/0257 , B81C1/00269 , B81C2203/0109 , B81C2203/019 , B81C2203/032 , H01L23/552 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/27013 , H01L2224/2919 , H01L2224/29191 , H01L2224/32014 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/73265 , H01L2224/83051 , H01L2224/83192 , H01L2224/83855 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/10158 , H01L2924/1433 , H01L2924/1461 , H01L2924/16152 , H01L2924/3025 , H01L2924/0715 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： An electronic component has a substrate, a die bonding pad provided on an upper surface of the substrate, a semiconductor element bonded onto the die bonding pad by a die bonding resin, a conductive pattern disposed adjacent to the die bonding pad, and a coating member covering the conductive pattern. At least an outer peripheral portion of a surface of the die bonding pad is made of an inorganic material. The inorganic material of the outer peripheral portion is exposed. The die bonding pad and the conductive pattern are separated by an air gap such that the coating member does not come into contact with the die bonding pad.
摘要翻译：电子部件具有基板，设置在基板的上表面的芯片接合焊盘，通过芯片接合树脂接合在芯片接合焊盘上的半导体元件，与芯片接合焊盘相邻配置的导电图案，以及涂敷部件覆盖导电图案。芯片接合焊盘的表面的至少外周部由无机材料构成。露出外周部的无机材料。芯片接合焊盘和导电图案被气隙隔开，使得涂层部件不与焊盘接合。

10. 发明申请

US20110044017A1 ELECTRONIC COMPONENT 有权
标题翻译：电子元件
公开(公告)号：US20110044017A1
公开(公告)日：2011-02-24
申请号：US12674694
申请日：2009-02-18
申请人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
发明人： Kazuyuki Ono , Yoshio Tanaka , Kiyoshi Nakajima , Naoto Kuratani , Tomofumi Maekawa
IPC分类号： H05K1/18 , H05K1/09
CPC分类号： H01L23/12 , H01L23/055 , H01L23/13 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/05553 , H01L2224/05554 , H01L2224/16235 , H01L2224/2919 , H01L2224/29191 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/48599 , H01L2224/48644 , H01L2224/49171 , H01L2224/73265 , H01L2224/83 , H01L2224/85444 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1433 , H01L2924/16152 , H01L2924/166 , H05K3/305 , H05K9/0026 , H05K2201/09036 , H01L2924/00014 , H01L2924/0715 , H01L2924/3512 , H01L2924/00 , H01L2924/00012
摘要： An electronic component has a printed substrate having a die bonding portion, a semiconductor element rigidly bonded to the die bonding portion of the printed substrate by a die bonding resin, and a wire bonding terminal formed by a conductor pattern on the printed substrate that is connected to the semiconductor element by a bonding wire. A groove portion located at a level lower than the conductor pattern of the printed substrate is formed in a region located on at least a die bonding portion side in a region surrounding the wire bonding terminal.
摘要翻译：电子部件具有印刷基板，其具有芯片接合部，通过芯片接合树脂与印刷基板的芯片接合部分刚性地接合的半导体元件，以及通过印刷基板上的导体图案形成的引线接合端子，所述导线图案被连接通过接合线连接到半导体元件。在位于引线接合端子周围的区域中的至少芯片接合部侧的区域中，形成位于比印刷基板的导体图案低的位置的槽部。

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