专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4507384A Pattern forming material and method for forming pattern therewith 失效
标题翻译：图案形成材料及其形成图案的方法
公开(公告)号：US4507384A
公开(公告)日：1985-03-26
申请号：US580468
申请日：1984-02-15
申请人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
发明人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
IPC分类号： C08G77/20 , C08G77/24 , G03F7/075 , G03F7/09 , G03C5/00
CPC分类号： G03F7/094 , C08G77/20 , C08G77/24 , G03F7/0757
摘要： A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
摘要翻译：图案形成材料包含具有以下通式的硅氧烷聚合物：其中R，R'和R“相同或不同，分别为选自氢，烷基或苯基的一个; X是选自氟，氯，溴，碘和-CH 2 Y基团中的一个（其中Y是选自氯，氟，溴，碘，丙烯酰氧基，甲基丙烯酰氧基和肉桂酰氧基中的一个）。 l，m和n分别为0或正整数，l和m不同时为0]。该材料对高能量辐射具有高灵敏度，高对比度，并且在氧气下具有优异的抗反应离子蚀刻性能。该材料方便地用作形成具有高纵横比的亚微米图案的负光刻胶。

2. 发明授权

US4702990A Photosensitive resin composition and process for forming photo-resist pattern using the same 失效
标题翻译：光敏树脂组合物及使用其形成光刻胶图案的方法
公开(公告)号：US4702990A
公开(公告)日：1987-10-27
申请号：US733505
申请日：1985-05-10
申请人： Akinobu Tanaka , Masao Morita , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
发明人： Akinobu Tanaka , Masao Morita , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
IPC分类号： G03F7/09 , G03C1/54 , G03C1/60
CPC分类号： G03F7/094
摘要： The present invention provides a photosensitive resin composition used to form a top resist layer of a multilayer resist system, the composition comprising a photosensitive polyphenylsilsesquioxane represented by the following general formula (I) of: ##STR1## wherein X is selected from the group consisting of acryloyloxymethyl, methacryloyloxymethyl, and cinnamoyloxymethyl; and l, m and n are zero or positive integers but l and m do not take the value of zero simultaneously; and a bisazide compound added to act as a cross-linking agent.The photosensitive resin composition has high sensitivity to UV light and excellent resistance to reactive ion etching under oxygen gas (O.sub.2 RIE).
摘要翻译：本发明提供一种用于形成多层抗蚀剂体系的顶层抗蚀剂层的感光性树脂组合物，该组合物包含由以下通式（I）表示的感光性聚苯基倍半硅氧烷：其中X选自由丙烯酰氧基甲基，甲基丙烯酰氧基甲基和肉桂酰氧基甲基组成的组; l，m和n为零或正整数，但l和m不同时取零值; 并加入双叠氮化合物作为交联剂。感光性树脂组合物对紫外线具有高灵敏度，并且在氧气（O 2 RIE）下具有优异的抗反应离子蚀刻性。

3. 发明授权

US4564579A Pattern forming material of a siloxane polymer 失效
标题翻译：图案形成材料的硅氧烷聚合物
公开(公告)号：US4564579A
公开(公告)日：1986-01-14
申请号：US680739
申请日：1984-12-12
申请人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
发明人： Masao Morita , Akinobu Tanaka , Saburo Imamura , Toshiaki Tamamura , Osamu Kogure
IPC分类号： C08G77/20 , C08G77/24 , G03F7/075 , G03F7/09 , G03C5/00
CPC分类号： G03F7/094 , C08G77/20 , C08G77/24 , G03F7/0757
摘要： A pattern forming material contains a siloxane polymer having the general formula: ##STR1## [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a --CH.sub.2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and l, m and n are respectively 0 or a positive integer, l and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.

4. 发明授权

US4426247A Method for forming micropattern 失效
标题翻译：微图案形成方法
公开(公告)号：US4426247A
公开(公告)日：1984-01-17
申请号：US482613
申请日：1983-04-06
申请人： Toshiaki Tamamura , Saburo Imamura , Masao Morita , Osamu Kogure
发明人： Toshiaki Tamamura , Saburo Imamura , Masao Morita , Osamu Kogure
IPC分类号： G03F7/075 , G03F7/26 , G03F7/36 , G03F7/38 , B44C1/22 , B29C17/08 , C03C15/00 , C03C25/06
CPC分类号： G03F7/265 , G03F7/0757 , G03F7/36 , G03F7/38 , Y10S438/95
摘要： A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer on a substrate, forming a silicone layer on the organic polymeric material layer, selectively irradiating a surface of the silicone layer with a high-energy beam, exposing the surface of the silicone layer to a radical addition polymerizable monomer gas so as to form a graft polymer film on an irradiated portion of the surface of the silicone layer, performing reactive ion etching using the graft polymer film as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.
摘要翻译：一种用于形成微图案的方法，包括以下步骤：在基底上形成有机聚合材料层，在有机聚合材料层上形成硅树脂层，用高能束选择性地照射硅树脂层的表面，以在硅氧烷层的表面的照射部分上形成接枝聚合物膜，使用接枝聚合物膜作为掩模进行反应离子蚀刻，以形成硅氧烷图案，并使用硅氧烷图案作为掩模进行反应离子蚀刻，以形成有机聚合材料图案。该方法允许以高精度和高纵横比形成抗蚀剂图案。

5. 发明授权

US4690887A Method for forming micro-patterns by development 失效
标题翻译：通过开发形成微观图案的方法
公开(公告)号：US4690887A
公开(公告)日：1987-09-01
申请号：US800100
申请日：1985-11-22
申请人： Mitsutoshi Fukuda , Makoto Fukutomi , Osamu Kogure , Kazunori Miyoshi
发明人： Mitsutoshi Fukuda , Makoto Fukutomi , Osamu Kogure , Kazunori Miyoshi
IPC分类号： G03F7/26 , G03F7/016 , G03F7/038 , G03F7/32 , G03C5/00
CPC分类号： G03F7/038 , G03F7/325
摘要： Disclosed is a method for forming micro-patterns on base plates such as for semiconductor integrated circuits, particularly by development, wherein a radiation sensitive negative resist film is formed on the base plate and irradiated according to pattern designs, and the non-irradiated portions of the film is dissolved by a liquid developer comprising a mixture of a good solvent selected from the group of alkyl esters of acetic acid, having an alkyl group containing 1 to 5 carbon atoms, and a poor solvent selected from the group consisting of alicyclic compounds and alkyl ethers of ethyleneglycol having an alkyl group containing 1 to 5 carbon atoms. The method can minimize swelling of irradiated portions of the resist film and can accelerate dissolution of non-irradiated portions of the resist film, so that desired micro-patterns with excellent edge shape quality can be obtained.
摘要翻译：公开了一种在半导体集成电路，特别是用于半导体集成电路的基板上形成微图形的方法，其中在基板上形成辐射敏感的负型抗蚀剂膜并根据图案设计照射，并且未照射部分该膜由液体显影剂溶解，该液体显影剂包括选自乙酸的烷基酯，具有1至5个碳原子的烷基的良溶剂和选自脂环族化合物和具有1〜5个碳原子的烷基的乙二醇的烷基醚。该方法可以使抗蚀剂膜的照射部分的溶胀最小化，并且可以加速抗蚀剂膜的未照射部分的溶解，从而可以获得具有优异的边缘形状质量的期望的微图案。

6. 发明授权

US4686168A Fluoroalkyl acrylate resist material and process for forming fine resist pattern 失效
标题翻译：氟烷基丙烯酸酯抗蚀剂材料和形成精细抗蚀剂图案的方法
公开(公告)号：US4686168A
公开(公告)日：1987-08-11
申请号：US710190
申请日：1985-03-11
申请人： Tsuneo Fujii , Hiroshi Inukai , Takayuki Deguchi , Toshihiko Amano , Masami Kakuchi , Hiroshi Asakawa , Osamu Kogure
发明人： Tsuneo Fujii , Hiroshi Inukai , Takayuki Deguchi , Toshihiko Amano , Masami Kakuchi , Hiroshi Asakawa , Osamu Kogure
IPC分类号： G03F7/039 , G03C5/00
CPC分类号： G03F7/039 , Y10T428/24802 , Y10T428/24826
摘要： A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.

7. 发明授权

US4539250A Resist material and process for forming fine resist pattern 失效
标题翻译：抵抗材料和形成精细抗蚀剂图案的工艺
公开(公告)号：US4539250A
公开(公告)日：1985-09-03
申请号：US450726
申请日：1982-12-17
申请人： Tsuneo Fujii , Hiroshi Inukai , Takayuki Deguchi , Toshihiko Amano , Masami Kakuchi , Hiroshi Asakawa , Osamu Kogure
发明人： Tsuneo Fujii , Hiroshi Inukai , Takayuki Deguchi , Toshihiko Amano , Masami Kakuchi , Hiroshi Asakawa , Osamu Kogure
IPC分类号： G03F7/039 , C08F220/22 , B05D3/06
CPC分类号： G03F7/039 , Y10T428/24802 , Y10T428/24826
摘要： A resist material of positive type having a high sensitivity, a high resolving power and an excellent adhesion property to substrates, which comprises a copolymer of a fluoroalkyl acrylate having the general formula: ##STR1## wherein R.sub.1 is methyl group, ethyl group, a halogen-substituted methyl or ethyl group, a halogen atom or hydrogen atom, R.sub.2 is a bivalent hydrocarbon group having 1 to 6 carbon atoms, and R.sub.f is a fluoroalkyl group having 1 to 15 carbon atoms, with an acrylic comonomer selected from the group consisting of a glycidyl acrylate, an acrylic acid, an acrylamide and an .alpha.-cyanoacrylate.
摘要翻译：具有高灵敏度，高分辨能力和对基材的优异粘附性的正型抗蚀剂材料，其包含具有以下通式的丙烯酸氟烷基酯的共聚物：其中R1是甲基，乙基，卤素取代的甲基或乙基，卤素原子或氢原子，R 2是具有1至6个碳原子的二价烃基，Rf是具有1至15个碳原子的氟代烷基，其中丙烯酸共聚单体选自丙烯酸缩水甘油酯，丙烯酸，丙烯酰胺和α-氰基丙烯酸酯。

8. 发明授权

US3936815A Apparatus and method for writing storable images into a matrix-addressed image-storing liquid crystal display device 失效
标题翻译：将可存储图像写入到矩阵寻址的图像存储液晶显示装置中的装置和方法
公开(公告)号：US3936815A
公开(公告)日：1976-02-03
申请号：US492421
申请日：1974-07-29
申请人： Osamu Kogure , Hisao Takada , Yoshinori Kato , Masao Kawachi
发明人： Osamu Kogure , Hisao Takada , Yoshinori Kato , Masao Kawachi
IPC分类号： C09K19/54 , G02F1/133 , G02F1/1337 , G02F1/137 , G02F1/18
CPC分类号： G02F1/13731 , C09K19/36 , C09K19/54 , G02F1/13306 , G02F1/13718
摘要： A matrix-addressed liquid crystal display device including a matrix-addressed display section is provided. The display section comprises a pair of optically transparent plates each of which having on one surface a plurality of parallel strip electrodes optically transparent and deposited through an optically transparent spacer, said pair of plates being parallelly arranged so that the electrodes will be inside and mutually intersect at right angles so as to form row and column electrode groups of a matrix, and a cholesteric phase liquid crystal filled between the respective plates, which liquid crystal being such that when a voltage applied to the electrodes is above a threshold level the molecular axes of the liquid crystal are aligned in the direction of electric field due to the voltage applied. The device utilized a nematic phase to cholesteric phase transition of the liquid crystal occurring when the voltage applied is maintained nearby the threshold level and becomes for a short time period below the threshold level.
摘要翻译：提供了一种包括矩阵寻址显示部分的矩阵寻址液晶显示装置。显示部分包括一对光学透明板，每个光学透明板在一个表面上具有光学透明并通过光学透明间隔物沉积的多个平行条状电极，所述一对平板布置成使得电极将在内部并相互相交以形成矩阵的列和列电极组，以及填充在各个板之间的胆甾醇相液晶，该液晶使得当施加到电极的电压高于阈值水平时，分子轴由于施加的电压，液晶在电场方向上排列。当施加的电压保持在阈值水平附近并且在低于阈值水平的短时间段内时，该装置利用向列相到出现的液晶的胆甾醇相变。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式