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    • 5. 发明授权
    • Near-field light generating element and method for forming the element
    • 近场光产生元件及其形成方法
    • US08223611B2
    • 2012-07-17
    • US12328232
    • 2008-12-04
    • Kosuke TanakaSeiichi TakayamaSatoshi Tomikawa
    • Kosuke TanakaSeiichi TakayamaSatoshi Tomikawa
    • G11B7/00G11B7/135
    • G11B5/3163G11B5/314G11B5/6088G11B2005/0005G11B2005/0021
    • Provided is a method for forming a near-field light generating element, which is capable of sufficiently suppressing the unevenness of a waveguide surface and the distortion within the waveguide. The forming method comprises the steps of: forming a first etching stopper layer on a lower waveguide layer; forming a second etching stopper layer; forming, on the second etching stopper layer, a plasmon antenna material layer; performing etching with the second etching stopper layer used as a stopper, to form a first side surface of plasmon antenna; forming a side-surface protecting mask so as to cover the first side surface; and performing etching with the first and second etching stopper layers used as stoppers, to form the second side surface. By providing the first and second etching stopper layer, over-etching can be prevented even when each etching process takes enough etch time, which allows easy management of etching endpoints.
    • 本发明提供一种形成近场光产生元件的方法,其能够充分地抑制波导表面的不均匀性和波导内的变形。 成形方法包括以下步骤:在下波导层上形成第一蚀刻阻挡层; 形成第二蚀刻停止层; 在第二蚀刻停止层上形成等离子体激元天线材料层; 用作为阻挡件的第二蚀刻阻挡层进行蚀刻,以形成等离子体激元的第一侧表面; 形成侧面保护罩以覆盖第一侧面; 并且利用用作塞子的第一和第二蚀刻阻挡层进行蚀刻,以形成第二侧表面。 通过设置第一和第二蚀刻停止层,即使每个蚀刻工艺都需要足够的蚀刻时间,也可以防止过蚀刻,这允许蚀刻端点的容易管理。
    • 9. 发明授权
    • Thermally-assisted magnetic recording medium and magnetic recording/reproducing device using the same
    • 热辅助磁记录介质和使用其的磁记录/再现装置
    • US08599652B2
    • 2013-12-03
    • US13182623
    • 2011-07-14
    • Satoshi TomikawaTomohito Mizuno
    • Satoshi TomikawaTomohito Mizuno
    • G11B11/00
    • G11B5/7325G11B5/314G11B2005/0021
    • A thermally-assisted magnetic recording (TAMR) medium of the present invention includes: a magnetization direction arrangement layer on a substrate; and a magnetic recording layer on the magnetization direction arrangement layer, wherein the magnetization direction arrangement layer is made of at least one selected from a group consisting of Co, Zr, CoZr, CoTaZr, CoFeTaZrCr, CoNbZr, CoNiZr, FeCoZrBCu, NiFe, FeCo, FeAlN, (FeCo)N, FeAlSi, and FeTaC so that a spreading of the heating spot applied from the magnetic head for thermally-assisted recording to the film surface of the magnetic recording medium is suppressed, and that an SN is improved by arranging the magnetization direction of the perpendicularly written recording magnetization to become identical to a perpendicular direction, and realizing the higher recording density.
    • 本发明的热辅助磁记录(TAMR)介质包括:基板上的磁化方向排列层; 和磁记录层,磁化方向布置层由选自Co,Zr,CoZr,CoTaZr,CoFeTaZrCr,CoNbZr,CoNiZr,FeCoZrBCu,NiFe,FeCo, FeAlN,(FeCo)N,FeAlSi和FeTaC,从而抑制从用于热辅助记录的磁头施加的加热点到磁记录介质的膜表面的扩散,并且通过将 垂直写入的记录磁化的磁化方向变得与垂直方向相同,并且实现更高的记录密度。