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1. 发明授权

US07172979B2 Substrate processing apparatus and method 有权
标题翻译：基板加工装置及方法
公开(公告)号：US07172979B2
公开(公告)日：2007-02-06
申请号：US10481424
申请日：2002-12-26
申请人： Akihisa Hongo , Xinming Wang
发明人： Akihisa Hongo , Xinming Wang
IPC分类号： H01L21/469 , B08B3/00 , B05C11/00
CPC分类号： H01L21/76843 , B08B3/02 , B08B2203/0288 , H01L21/288 , H01L21/67051 , H01L21/6708 , H01L21/76849 , H01L21/76873
摘要： A substrate processing apparatus has a substrate holder for detachably holding a substrate so that a surface, to be processed, of the substrate faces downward, and a sealing ring for sealing a peripheral portion of the surface, to be processed, of the substrate held by the substrate holder. The substrate processing apparatus also has a plurality of ejection nozzles disposed below the substrate holder for ejecting a treatment solution toward the surface, to be processed, of the substrate held by the substrate holder, and a mechanism for rotating and vertically moving the substrate holder and the ejection nozzles relative to each other.
摘要翻译：基板处理装置具有：基板保持件，用于可拆卸地保持基板，使得待处理的基板的表面朝下;密封环，用于密封待加工的表面的周边部分基板支架。基板处理装置还具有多个喷射喷嘴，其设置在基板保持器的下方，用于向被基板保持器保持的基板的待处理表面喷射处理溶液，以及用于使基板保持器旋转和垂直移动的机构，喷嘴相对于彼此。

2. 发明授权

US07297210B2 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US07297210B2
公开(公告)日：2007-11-20
申请号：US10481448
申请日：2002-10-15
申请人： Akihisa Hongo , Naoki Matsuda , Xinming Wang
发明人： Akihisa Hongo , Naoki Matsuda , Xinming Wang
IPC分类号： B05C11/00
CPC分类号： C25D17/001 , C23C18/1617 , C23C18/1628 , C23C18/1676 , C23C18/50 , H01L21/288
摘要： There is provided a plating apparatus which can keep a plating solution always in its optimal condition while minimizing the amount of plating solution used, and which can easily form a uniform plated film on the plating surface of a workpiece.The plating apparatus includes: a plating solution supply system (70) for constantly circulating a plating solution while heating the plating solution in a circulation tank (80) provided with a heating apparatus (78a), and supplying a predetermined amount of plating solution to a plating treatment section (24) when carrying out plating treatment; a plating solution recovery system (72) for recovering the plating solution after the plating treatment in the plating treatment section (24), heating the plating solution and returning the heated plating solution to the circulation tank (80); and a plating solution replenishment system (74) for replenishing the circulation tank (80) with a fresh plating solution or a plating solution component.
摘要翻译：提供一种电镀设备，其可以使电镀液始终处于最佳状态，同时最小化所使用的电镀溶液的量，并且可以在工件的电镀表面上容易地形成均匀的镀膜。电镀装置包括：电镀液供给系统（70），用于在加热设置有加热装置（78a）的循环罐（80）的同时加热电镀液，使电镀液不断循环，并将预定量的电镀液供给到电镀处理部（24）; 电镀液回收系统（72），用于在所述电镀处理部（24）中回收所述电镀处理后的所述电镀液，加热所述电镀液并将所述被加热的电镀液返回到所述循环罐（80）。以及用于用新鲜电镀液或电镀液成分补充循环罐（80）的电镀液补充系统（74）。

3. 发明申请

US20110129329A1 WIND TURBINE INSTALLATION VESSEL AND A GRAVITY CENTER ADJUSTMENT DEVICE THEREOF 审中-公开
标题翻译：风力涡轮机安装船和重力中心调整装置
公开(公告)号：US20110129329A1
公开(公告)日：2011-06-02
申请号：US12754502
申请日：2010-04-05
申请人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
发明人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
IPC分类号： F03D11/00
CPC分类号： B63B39/02 , B63B25/28 , F03D13/10 , F03D13/25 , F05B2240/932 , Y02E10/727
摘要： The present invention discloses a gravity center adjustment device (2) for a wind turbine installation vessel. The gravity center adjustment device (2) is movably mounted to an outside of a vessel body (4) of the wind turbine installation vessel, so that the gravity center adjustment device (2) can selectively move in a plane substantially parallel with the vessel body (4). Since the gravity center adjustment device (2) according to the invention is movably installed to the vessel body and can move in a plane substantially parallel with the vessel body (4) so as to adjust the horizontal position of the gravity center of the installation vessel, its ability of adjusting the gravity center of the wind turbine installation vessel can be improved and the stability of the wind turbine installation vessel can be improved. Therefore, the operation efficiency can be improved and the cost of constructing a wind power plant on the offshore can be reduced. The present invention also discloses a wind turbine installation vessel including the gravity center adjustment devices (2) described above.
摘要翻译：本发明公开了一种用于风力涡轮机安装容器的重心调节装置（2）。重力调节装置（2）可移动地安装在风力涡轮机安装容器的容器主体（4）的外部，使得重心调节装置（2）可以选择性地在与容器主体平行的平面中移动（4）。由于根据本发明的重心调节装置（2）可移动地安装到容器主体上并且可以在与容器主体（4）基本平行的平面中移动，以便调节安装容器的重心的水平位置可以提高其调整风力涡轮机安装容器的重心的能力，并且可以提高风力涡轮机安装容器的稳定性。因此，可以提高运行效率，降低在海上建设风力发电厂的成本。本发明还公开了一种包括上述重心调节装置（2）的风力涡轮机安装容器。

4. 发明申请

US20110126747A1 WIND TURBINE INSTALLATION VESSEL AND A GRAVITY CENTER ADJUSTMENT DEVICE THEREOF 审中-公开
标题翻译：风力涡轮机安装船和重力中心调整装置
公开(公告)号：US20110126747A1
公开(公告)日：2011-06-02
申请号：US12754524
申请日：2010-04-05
申请人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
发明人： Jialiang Wu , Xinming Wang , Yanlin Li , Junlei Bai
IPC分类号： B63B43/08 , B63B43/04 , B63B1/00
CPC分类号： B63B25/28 , B63B39/02 , F03D13/10 , F03D13/25 , F05B2240/932 , Y02E10/727
摘要： The present invention discloses a gravity center adjustment device for a wind turbine installation vessel, with the gravity center adjustment device (2) fixedly mounted to the outside of the vessel body (4) of the wind turbine installation vessel. The existence of the gravity center adjustment device (2) according to the present invention is independent from the vessel body and no longer limited by the size of the installation vessel and the size of the ballast bank provided in the vessel body of the wind turbine installation vessel. The size of the gravity center adjustment device (2) may be set as desired so that the adjustment ability of the gravity center adjustment device can be changed, whereby its ability for adjusting gravity center of the wind turbine installation vessel can be improved and the stability of the wind turbine installation vessel can be improved. Therefore, the wind turbine installation vessel can operate in an environment of poor weather condition, so that the operation efficiency can be improved and the cost of constructing a wind power plant on the offshore can be reduced. The present invention also discloses a wind turbine installation vessel including the above-mentioned gravity center adjustment device (2).
摘要翻译：本发明公开了一种用于风力涡轮机安装容器的重心调节装置，重心调节装置（2）固定地安装在风力涡轮机安装容器的容器本体（4）的外部。根据本发明的重心调节装置（2）的存在独立于船体，不再受安装船的尺寸和设置在风力涡轮机装置的船体中的压载舱的尺寸的限制船只。重心调整装置（2）的尺寸可以根据需要设定，从而能够改变重心调节装置的调节能力，能够提高调整风力发电机组重心的重心的能力和稳定性的风力涡轮机安装容器。因此，风力发电机安装船可以在天气条件恶劣的环境下运行，从而可以提高运行效率，降低海上风力发电厂的建设成本。本发明还公开了一种包括上述重心调节装置（2）的风力涡轮机安装容器。

5. 发明申请

US20080176008A1 Apparatus and method for forming magnetic film 审中-公开
标题翻译：用于形成磁性膜的设备和方法
公开(公告)号：US20080176008A1
公开(公告)日：2008-07-24
申请号：US12010181
申请日：2008-01-22
申请人： Xinming Wang , Akira Owatari , Takashi Koba , Tsutomu Nakada , Akira Fukuda
发明人： Xinming Wang , Akira Owatari , Takashi Koba , Tsutomu Nakada , Akira Fukuda
IPC分类号： H01F10/08
CPC分类号： H01F41/24 , C23C18/161 , C23C18/1673 , C23C18/1879 , C23C18/36
摘要： A magnetic film forming apparatus can form a magnetic film, especially a magnetic alloy film, selectively on a metal surface exposed on a surface of a substrate, such as a semiconductor wafer. The magnetic film forming apparatus comprises an electroless plating apparatus having a magnetic field generation apparatus for generating a magnetic field around and parallel to a substrate disposed such that the surface of the substrate is in contact with a plating solution in a plating tank.
摘要翻译：磁性膜形成装置可以在暴露在诸如半导体晶片的基板的表面上的金属表面上选择性地形成磁性膜，特别是磁性合金膜。磁性膜形成装置包括具有磁场产生装置的化学镀设备，用于产生围绕并平行于基板的磁场，该基板设置成使得基板的表面与电镀槽中的镀液接触。

6. 发明授权

US07332198B2 Plating apparatus and plating method 失效
标题翻译：电镀装置及电镀方法
公开(公告)号：US07332198B2
公开(公告)日：2008-02-19
申请号：US10481437
申请日：2002-10-28
申请人： Xinming Wang , Kenichi Abe , Koji Mishima
发明人： Xinming Wang , Kenichi Abe , Koji Mishima
IPC分类号： B05D1/18
CPC分类号： H01L21/76843 , C23C18/1619 , C23C18/1669 , C23C18/1676 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease the footprint. The plating apparatus includes a plating bath having a double bath structure including an inner bath for holding a plating solution and carrying out plating, and an outer bath which surrounds the inner bath and is in fluid communication therewith. A heating device is disposed in the outer bath. The plating apparatus may further include means for circulating or stirring the plating solution in the plating bath.
摘要翻译：提供一种电镀装置和方法，其可以在电镀期间更均匀地控制电镀液的温度，并且容易地在待镀覆的表面上形成均匀的镀膜，并且可以简化装置并减少占地面积。电镀设备包括具有双浴结构的电镀浴，其包括用于保持电镀液并进行电镀的内浴，以及围绕内浴并与其流体连通的外浴。加热装置设置在外浴中。电镀装置还可以包括用于使电镀液中的电镀液循环或搅拌的装置。

7. 发明授权

US07060618B2 Semiconductor device, method for manufacturing the same, and plating solution 有权
标题翻译：半导体装置及其制造方法以及电镀液
公开(公告)号：US07060618B2
公开(公告)日：2006-06-13
申请号：US10216902
申请日：2002-08-13
申请人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
发明人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/302
CPC分类号： H01L21/76843 , C23C18/1608 , C23C18/1632 , C23C18/1653 , C23C18/32 , C23C18/48 , C23C18/50 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76849 , H01L21/76864 , H01L21/76874 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连结构，保护互连。保护膜具有平坦的表面。

8. 发明申请

US20060040487A1 Semiconductor device, method for manufacturing the same, and plating solution 有权
公开(公告)号：US20060040487A1
公开(公告)日：2006-02-23
申请号：US11254790
申请日：2005-10-21
申请人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
发明人： Hiroaki Inoue , Norio Kimura , Xinming Wang , Moriji Matsumoto , Makoto Kanayama
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C18/1608 , C23C18/1632 , C23C18/1653 , C23C18/32 , C23C18/48 , C23C18/50 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76849 , H01L21/76864 , H01L21/76874 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

9. 发明申请

US20050245080A1 Method and apparatus for processing substrate 有权
标题翻译：处理基板的方法和装置
公开(公告)号：US20050245080A1
公开(公告)日：2005-11-03
申请号：US11039967
申请日：2005-01-24
申请人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
发明人： Xinming Wang , Daisuke Takagi , Akihiko Tashiro , Yukio Fukunaga , Akira Fukunaga , Akira Owatari , Yukiko Nishioka , Tsuyoshi Sahoda
IPC分类号： C23C18/16 , C23C18/18 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/02068 , C23C18/1632 , C23C18/1689 , C23C18/1844 , H01L21/02074 , H01L21/288 , H01L21/67028 , H01L21/76849 , H01L21/76874 , H01L21/76883
摘要： A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.
摘要翻译：基板处理方法可以通过在贱金属（例如互连）的暴露表面上通过无电解电镀牢固地形成金属膜，具有增加的生产量并且在母材中不形成空隙。基板处理方法包括：用包含含羧基的有机酸或其盐和表面活性剂的水溶液作为添加剂的清洗溶液清洗在表面形成的基体金属的基材的表面; 使清洗后的基板的表面与包含清洗液和含有催化剂金属离子的溶液的混合物的处理溶液接触，从而将催化剂施加到基板的表面; 以及通过在基板的催化剂涂覆表面上通过无电镀形成金属膜。

10. 发明申请

US20050208774A1 Wet processing method and processing apparatus of substrate 审中-公开
标题翻译：湿法加工方法及基材加工装置
公开(公告)号：US20050208774A1
公开(公告)日：2005-09-22
申请号：US11029675
申请日：2005-01-06
申请人： Akira Fukunaga , Akira Owatari , Masahiko Sekimoto , Xinming Wang
发明人： Akira Fukunaga , Akira Owatari , Masahiko Sekimoto , Xinming Wang
IPC分类号： C23C18/16 , C23C18/18 , C23F1/00 , C23G1/08 , C23G1/10 , C23G3/02 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/306 , H01L21/321 , H01L21/461 , H01L21/768
CPC分类号： H01L21/67086 , C23C18/1619 , C23C18/1893 , C23G1/088 , C23G1/103 , C23G3/023 , C23G3/026 , C23G3/027 , C25D17/001 , H01L21/02068 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/288 , H01L21/6708 , H01L21/67173 , H01L21/6719 , H01L21/6723 , H01L21/76849 , H01L21/76864 , H01L21/76874
摘要： A substrate wet-processing method can carry out uniform chemical processing of the surface of a substrate while easily preventing a gas from remaining on the surface of the substrate and preventing difference in the concentration and the temperature of a chemical solution between the end portion and the central portion of the substrate. The substrate wet-processing method includes: providing an acidic solution whose concentration is previously adjusted within a predetermined concentration range; continuously spraying the acidic solution having the adjusted concentration toward a substrate at a predetermined pressure to bring it into contact with a surface of the substrate; and then forming a film of an insulating material, a metal or an alloy on the exposed surface of a metal formed in the surface of the substrate.
摘要翻译：基板湿法处理方法可以对基板表面进行均匀的化学处理，同时容易地防止气体残留在基板的表面上，并且防止端部和端部之间的化学溶液的浓度和温度的差异基板的中心部分。底物湿法处理方法包括：提供浓度预先调节在预定浓度范围内的酸性溶液; 将具有调整浓度的酸性溶液以预定压力连续喷射到基板，使其与基板的表面接触; 然后在形成在基板的表面的金属的暴露表面上形成绝缘材料，金属或合金的膜。

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