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1. 发明授权

US5927077A Processing system hot plate construction substrate 失效
标题翻译：加工系统热板施工基板
公开(公告)号：US5927077A
公开(公告)日：1999-07-27
申请号：US839264
申请日：1997-04-17
申请人： Akihiro Hisai , Minobu Matsunaga , Hiroshi Kobayashi
发明人： Akihiro Hisai , Minobu Matsunaga , Hiroshi Kobayashi
IPC分类号： H01L21/00 , F25B21/02
CPC分类号： H01L21/67103
摘要： In a substrate thermal processing device, a temperature of a substrate can be precisely controlled within a short time by means of a hot plate oven. The substrate thermal processing device includes a substrate supporting plate for supporting the substrate, an auxiliary heating/cooling section for heating or cooling the substrate and having a Peltier effect element and disposed on a lower surface of the substrate supporting plate, and a main heating section for heating the substrate and disposed below the substrate supporting plate and the auxiliary heating/cooling section.
摘要翻译：在基板热处理装置中，可以通过热板式烘箱在短时间内精确地控制基板的温度。基板热处理装置包括用于支撑基板的基板支撑板，用于加热或冷却基板的辅助加热/冷却部分，并具有珀耳帖效应元件并设置在基板支撑板的下表面上，主加热部分用于加热基板并且设置在基板支撑板和辅助加热/冷却部分下方。

2. 发明授权

US6080969A Apparatus for and method of thermally processing substrate 失效
标题翻译：基板热处理装置及方法
公开(公告)号：US6080969A
公开(公告)日：2000-06-27
申请号：US85631
申请日：1998-05-27
申请人： Hiroyasu Goto , Akihiro Hisai , Minobu Matsunaga , Hiroshi Kobayashi
发明人： Hiroyasu Goto , Akihiro Hisai , Minobu Matsunaga , Hiroshi Kobayashi
IPC分类号： H05K3/06 , H01L21/00 , H01L21/027 , H01L23/38 , H05B3/68 , C23C16/00
CPC分类号： H01L21/67103
摘要： A substrate thermal processing apparatus easily changes a set temperature at which a substrate is set while thermally processed. A heating plate of the substrate thermal processing apparatus comprises a substrate supporting plate which supports a substrate, an auxiliary heating portion and a main heating portion, and a cooling Peltier element and a water cooling jacket. For heating a substrate, heat which is generated at the main heating portion which comprises a heater portion is transmitted to the substrate supporting plate through the auxiliary heating portion which comprises a Peltier element, so that the substrate is heated up. When the temperature of the substrate supporting plate is to be decreased, the auxiliary heating portion and the cooling Peltier element guide the heat of the substrate supporting plate to the water cooling jacket, and the heat is discharged outside by cooling water.
摘要翻译：基板热处理装置在热处理时容易地改变设置基板的设定温度。基板热处理装置的加热板包括支撑基板的基板支撑板，辅助加热部和主加热部，以及冷却珀耳帖元件和水冷套。为了加热基板，在包括加热器部分的主加热部分处产生的热量通过包括珀尔帖元件的辅助加热部分传递到基板支撑板，使得基板被加热。当基板支撑板的温度降低时，辅助加热部分和冷却珀耳帖元件将基板支撑板的热量引导到水冷套，并且热量通过冷却水排出到外部。

3. 发明授权

US06869234B2 Developing apparatus and developing method 失效
标题翻译：开发设备和开发方法
公开(公告)号：US06869234B2
公开(公告)日：2005-03-22
申请号：US10637774
申请日：2003-08-07
申请人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga , Akihiko Morita
发明人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga , Akihiko Morita
IPC分类号： G03D5/00
CPC分类号： G03D5/00
摘要： A substrate (SW) is rotatably held in an approximately horizontal position by a wafer holding and rotation mechanism (810). One end of a rinsing liquid supply nozzle (840) is rotatably supported by a rinsing liquid supply nozzle rotation supporting mechanism (850) to pass over the substrate (SW). In response to rotation of the rinsing liquid supply nozzle (840), the rotation axis of the rinsing liquid supply nozzle (840) moves in a direction closer to or away from the rotation axis of the substrate (SW), whereby the amount of projection of a tip portion of the rinsing liquid supply nozzle (840) is reduced.
摘要翻译：基板（SW）通过晶片保持旋转机构（810）可旋转地保持在大致水平的位置。冲洗液供给喷嘴（840）的一端由冲洗液供给喷嘴旋转支撑机构（850）可旋转地支撑，从而越过基板（SW）。响应于冲洗液体供给喷嘴（840）的旋转，冲洗液体供给喷嘴（840）的旋转轴线在更靠近或远离基板（SW）的旋转轴线的方向上移动，由此投影量的清洗液供给喷嘴（840）的顶端部分减少。

4. 发明授权

US06656277B2 Apparatus for and method of processing substrate 失效
标题翻译：基板处理装置及其处理方法
公开(公告)号：US06656277B2
公开(公告)日：2003-12-02
申请号：US10270885
申请日：2002-10-11
申请人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga
发明人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga
IPC分类号： B05C500
CPC分类号： H01L21/6715 , H01L21/67028
摘要： A developer supply nozzle moves from the side of a first edge of a substrate to the side of a second edge thereof opposite from the first edge to apply a developer across a major surface of the substrate. After a lapse of required development process time, a rinsing solution supply nozzle moves from the side of the first edge of the substrate to the side of the second edge thereof to apply a rinsing solution across the major surface of the substrate. Making the moving speed of the rinsing solution supply nozzle higher than the moving speed of the developer supply nozzle shortens actual developing time at a site (downstream relative to a scanning direction) where a development reaction is apt to accelerate under the influence of fluctuations of the developer caused by dropping of the rinsing solution.
摘要翻译：显影剂供应喷嘴从基板的第一边缘的侧面移动到与第一边缘相对的第二边缘的侧面，以在显影剂的主表面上施加显影剂。在经过所需的显影处理时间之后，冲洗溶液供应喷嘴从基板的第一边缘侧向其第二边缘侧移动，以在基板的主表面上施加冲洗溶液。使冲洗溶液供给喷嘴的移动速度高于显影剂供给喷嘴的移动速度，缩短在显影反应容易加速的位置（扫描方向的下游）的实际显影时间，显影剂由漂洗溶液的滴落引起。

5. 发明授权

US06752544B2 Developing apparatus and developing method 有权
标题翻译：开发设备和开发方法
公开(公告)号：US06752544B2
公开(公告)日：2004-06-22
申请号：US10305911
申请日：2002-11-26
申请人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga
发明人： Masakazu Sanada , Masahiko Harumoto , Hiroshi Kobayashi , Minobu Matsunaga
IPC分类号： G03D500
CPC分类号： G03D5/00 , Y10S134/902
摘要： A substrate (W) is held in an approximately horizontal position by a substrate holder (10) and is rotated by a spinning motor (13). A rinsing liquid supply nozzle (140) is rotatably supported at its one end by a second nozzle movement mechanism (150) and is rotated to pass over the substrate (W). The rinsing liquid supply nozzle (140) is rotated to pass over the substrate (W) and at the same time to discharge a rinsing liquid from its discharge unit. At this time, the rinsing liquid supply nozzle (140) and the substrate (W) are rotated so that a virtual scanning direction (La) of the substrate (W) is substantially perpendicular to a direction of extension of the rinsing liquid supply nozzle (140). That is, since the rinsing liquid supply nozzle (140) is shifted in the virtual scanning direction (La), a non-supplying area of the substrate (W) where a rinsing liquid is not supplied can successively be made up and eliminated as the scanning by the nozzle (140) proceeds.
摘要翻译：衬底（W）通过衬底保持器（10）保持在大致水平的位置，并由旋转电机（13）旋转。冲洗液供给喷嘴（140）的一端由第二喷嘴移动机构（150）可旋转地支撑，并旋转而越过基板（W）。冲洗液供给喷嘴（140）旋转以越过基板（W），同时从其排出单元排出冲洗液体。此时，冲洗液供给喷嘴（140）和基板（W）旋转，使得基板（W）的虚拟扫描方向（La）大致垂直于冲洗液体供给喷嘴的延伸方向 140）。也就是说，由于冲洗液体供给喷嘴（140）沿虚拟扫描方向（La）移动，所以不能供应冲洗液体的基板（W）的非供应区域可以作为由喷嘴（140）进行扫描。

6. 发明授权

US06827782B2 Chemical treating apparatus 有权
标题翻译：化学处理设备
公开(公告)号：US06827782B2
公开(公告)日：2004-12-07
申请号：US10353151
申请日：2003-01-28
申请人： Shigehiro Goto , Katsushi Yoshioka , Minobu Matsunaga
发明人： Shigehiro Goto , Katsushi Yoshioka , Minobu Matsunaga
IPC分类号： B05B716
CPC分类号： H01L21/6715 , B05B7/1666 , B05B12/1472 , B05C5/001 , H01L21/67051
摘要： A chemical treating apparatus for performing a predetermined treatment of a principal surface of a substrate by delivering a treating solution thereto. The apparatus includes a treating solution delivery nozzle for delivering the treating solution to the principal surface of a substrate. The nozzle has a treating solution reservoir adjacent a tip end thereof for storing the treating solution. A temperature control device holds the treating solution reservoir to control the temperature of the treating solution in the treating solution reservoir through heat exchange with the treating solution.
摘要翻译：一种化学处理装置，用于通过将处理溶液输送到基板的主表面进行预定处理。该设备包括用于将处理溶液输送到基底的主表面的处理溶液输送喷嘴。喷嘴具有邻近其顶端的处理溶液储存器，用于存储处理溶液。温度控制装置保持处理液储存器，以通过与处理溶液的热交换来控制处理溶液储存器中处理溶液的温度。

7. 发明授权

US6099643A Apparatus for processing a substrate providing an efficient arrangement and atmospheric isolation of chemical treatment section 失效
标题翻译：用于处理衬底的装置，其提供化学处理部分的有效布置和大气隔离
公开(公告)号：US6099643A
公开(公告)日：2000-08-08
申请号：US993284
申请日：1997-12-18
申请人： Masami Ohtani , Minobu Matsunaga , Tutomu Ueyama , Ryuji Kitakado , Kaoru Aoki
发明人： Masami Ohtani , Minobu Matsunaga , Tutomu Ueyama , Ryuji Kitakado , Kaoru Aoki
IPC分类号： H01L21/00 , B05C13/00
CPC分类号： H01L21/67173 , H01L21/67017 , H01L21/67178 , Y10S414/135 , Y10S414/136 , Y10S414/141
摘要： An atmospheric conditioning unit for supplying temperature- and humidity-controlled air to a chemical processing part (spin coater) is arranged immediately above a chemical processing part, between this chemical processing part and a heat treatment part (including a hot plate and a cool plate). Namely, the chemical processing part, the atmospheric conditioning unit and the heat treatment part are vertically arranged in a stacked manner. The atmospheric conditioning unit receives external air from an opening. A closed partition is provided to block air flow between the atmospheric conditioning unit and a transport area. The temperature- and humidity-controlled air supplied from the atmospheric conditioning unit to the spin coater forms a downflow in the spin coater, and thereafter rises through an opening and joins with the air flowing from the opening, to be introduced into the atmospheric conditioning unit again and reused.
摘要翻译：用于向化学处理部件（旋转涂布机）供给温度和湿度控制的空气的大气调节单元布置在化学处理部件的正上方，该化学处理部件和热处理部件（包括热板和冷却板）。也就是说，化学处理部分，大气调节单元和热处理部分以堆叠的方式垂直布置。大气调节装置从开口接收外部空气。提供一个封闭的隔板以阻挡大气调节单元和运输区域之间的空气流动。从大气调节单元向旋转涂布机供应的温度和湿度控制的空气在旋转涂布机中形成向下流动，然后通过开口上升并与从开口流出的空气接合，以引入大气调节单元再次重复使用。

8. 发明授权

US5638687A Substrate cooling method and apparatus 失效
标题翻译：基板冷却方法和装置
公开(公告)号：US5638687A
公开(公告)日：1997-06-17
申请号：US560526
申请日：1995-11-17
申请人： Yasuhiro Mizohata , Minobu Matsunaga
发明人： Yasuhiro Mizohata , Minobu Matsunaga
IPC分类号： F25B21/02 , G03F7/16 , G03F7/30 , H01L23/38 , H01L21/02
CPC分类号： H01L23/38 , G03F7/168 , G03F7/3021 , F25B21/02 , F25B2321/0212 , H01L2924/0002
摘要： In a substrate cooling apparatus for cooling a substrate placed on or adjacent a cooling plate having Peltier elements, the substrate is cooled quickly by controlling the Peltier elements to cool the cooling plate to a second set temperature below a target temperature to which the substrate is to be cooled, and switching control of the Peltier elements at a predetermined time after the substrate is placed on or adjacent the cooling plate, to increase the temperature of the cooling plate to the target temperature. Alternatively, the substrate may be cooled quickly by controlling the Peltier elements to cool the cooling plate to a predetermined temperature, controlling the Peltier elements at a normalized maximum cooling output when the substrate is placed on or adjacent the cooling plate, determining, when the cooling plate reaches a peak of temperature increase, a lower limit temperature related to the peak of temperature increase, and switching control of the Peltier elements, when the cooling plate reaches the lower limit temperature, to bring the cooling plate to the target temperature.
摘要翻译：在用于冷却放置在具有珀尔帖元件的冷却板上或邻近具有珀尔帖元件的冷却板上的基板的基板冷却装置中，通过控制珀尔帖元件将冷却板冷却到低于基板所要求的目标温度的第二设定温度来快速冷却基板冷却，并且在将基板放置在冷却板上或其后面的预定时间内对珀耳帖元件进行切换控制，以将冷却板的温度升高到目标温度。或者，可以通过控制珀尔帖元件将冷却板冷却到预定温度来快速冷却基板，当将基板放置在或靠近冷却板时，将珀尔帖元件控制在归一化的最大冷却输出，当冷却板达到温度上升的峰值，与温度升高峰值相关的下限温度，以及当冷却板达到下限温度时，珀尔帖元件的切换控制，使冷却板达到目标温度。

9. 发明授权

US06558053B2 Substrate processing apparatus 有权
公开(公告)号：US06558053B2
公开(公告)日：2003-05-06
申请号：US10125229
申请日：2002-04-18
申请人： Kazuhito Shigemori , Masakazu Sanada , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Tsuyoshi Mitsuhashi , Takashi Nagao , Mitsumasa Kodama , Yukihiko Inagaki , Yoshihisa Yamada
发明人： Kazuhito Shigemori , Masakazu Sanada , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Tsuyoshi Mitsuhashi , Takashi Nagao , Mitsumasa Kodama , Yukihiko Inagaki , Yoshihisa Yamada
IPC分类号： G03D500
CPC分类号： H01L21/67161 , H01L21/6715 , H01L21/67167 , H01L21/67178
摘要： A substrate processing apparatus includes a coating section, a developing section, a heat-treating section and a transport mechanism. The coating section has first processing units each for performing a coverage process to supply a photoresist solution to a substrate and cover a surface of the substrate with the photoresist solution, a second processing unit for spinning the substrate, after the coverage process, at high speed to make the photoresist solution into a film, dry the photoresist film, and clean the substrate. All substrates are processed with the same coating conditions to suppress differences in quality among the substrates. The first and second processing units perform the respective processes concurrently to improve the throughput of substrate processing.

10. 发明授权

US07105074B2 Substrate treating method and apparatus 有权
公开(公告)号：US07105074B2
公开(公告)日：2006-09-12
申请号：US10202279
申请日：2002-07-22
申请人： Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
发明人： Osamu Tamada , Tsuyoshi Mitsuhashi , Minobu Matsunaga , Katsushi Yoshioka , Kenji Sugimoto , Kaoru Aoki , Moritaka Yano , Satoshi Yamamoto , Masakazu Sanada , Takashi Nagao , Mitsumasa Kodama
IPC分类号： B05B3/00 , B08B3/00
CPC分类号： H01L21/6715 , H01L21/31133
摘要： A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

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