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1. 发明申请

US20050207946A1 Exhaust gas filter, method of manufacturing the exhaust gas filter, and exhaust gas processing device using the exhaust gas filter 审中-公开
标题翻译：废气过滤器，废气过滤器的制造方法以及使用废气过滤器的废气处理装置
公开(公告)号：US20050207946A1
公开(公告)日：2005-09-22
申请号：US11079428
申请日：2005-03-15
申请人： Akihiko Asano , Koichi Kurazono , Hidemitsu Hayashi , Shuichi Kubo , Takao Tani , Toshiaki Tanaka
发明人： Akihiko Asano , Koichi Kurazono , Hidemitsu Hayashi , Shuichi Kubo , Takao Tani , Toshiaki Tanaka
IPC分类号： F01N3/02 , B01D39/20 , B01D46/00 , B01D46/24 , B01D46/42 , B01D53/86 , B01D53/94 , B01J23/10 , B01J35/04 , F01N3/022 , B01D50/00 , F01N3/00
CPC分类号： B01D46/2429 , B01D46/0001 , B01D53/9431 , B01D53/9454 , B01D2046/2433 , B01D2046/2437 , B01D2275/30 , F01N3/0222 , Y02T10/20 , Y02T10/22
摘要： An exhaust gas filter including a filter base body which has many pores and has a flow-in surface, in which exhaust gas containing particulate matter flows, and an exhaust surface, from which purified gas is exhausted, the exhaust gas filter having at least a function of removing the particulate matter from the exhaust gas by passing the exhaust gas through the filter base body from the flow-in surface toward the exhaust surface, wherein a micropore structure, in which agglomerates of particulates having fine gaps are connectedly provided and which is air-permeable and which collects the particulate matter contained in the exhaust gas, is provided at the filter base body at a surface and/or within the pores which open and communicate the flow-in surface and the exhaust surface to and with one another.
摘要翻译：一种废气过滤器，包括具有许多孔并具有流入表面的过滤器基体，其中包含颗粒物质的废气流动，并且排出净化气体的废气表面，所述排气过滤器具有至少一个通过将废气从流入面朝向排气面使废气通过过滤器基体而从排气中除去颗粒物的功能，其中连接具有微细间隙的颗粒团聚物的微孔结构，在所述过滤器基体的表面和/或所述孔内设置有透气性并且收集所述废气中所含的颗粒状物质的孔，所述孔内将所述流入表面和所述排气表面彼此打开并连通。

2. 发明授权

US07179693B2 Method for manufacturing thin film device that includes a chemical etchant process 有权
标题翻译：包括化学蚀刻工艺的薄膜器件的制造方法
公开(公告)号：US07179693B2
公开(公告)日：2007-02-20
申请号：US11079049
申请日：2005-03-14
申请人： Akihiko Asano , Tomoatsu Kinoshita
发明人： Akihiko Asano , Tomoatsu Kinoshita
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , G02F2001/133302 , G02F2001/136222 , H01L27/1214 , H01L27/1251 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L2221/68368
摘要： The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.
摘要翻译：薄膜器件的制造方法技术领域本发明涉及薄膜器件的制造方法。薄膜器件通过将第二衬底（106）通过第一粘合剂层（105）粘合到形成在第一衬底（101）上的保护层（102）上的薄膜器件层（103）而制造，根据包括化学过程和机械抛光工艺的至少一个工艺的工艺完全或部分地去除第一衬底（101），将第三衬底（109）接合到暴露的保护层（102）或保护层（ 102）通过第二粘合剂层（108）被部分去除的第一基板（101）覆盖并分离或移除第二基板（106）。因此，制造适合于轻薄型显示面板的薄膜器件，而不会劣化粗糙度。

3. 发明申请

US20050252894A1 Laser annealing device and method for producing thin-film transistor 审中-公开
标题翻译：激光退火装置及薄膜晶体管的制造方法
公开(公告)号：US20050252894A1
公开(公告)日：2005-11-17
申请号：US11177574
申请日：2005-07-08
申请人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
发明人： Yutaka Imai , Nobuhiko Umezu , Akihiko Asano , Shin Hotta , Koichi Tatsuki , Atsushi Fukumoto , Shigeo Kubota
IPC分类号： B23K26/06 , B23K26/067 , H01L21/20 , H01L21/268 , B23K26/02
CPC分类号： B23K26/0613 , B23K26/0604 , B23K26/0622 , B23K26/067 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1285
摘要： A laser annealing device (10) includes a laser oscillator (12), radiating a pulsed laser light beam of a preset period, and an illuminating optical system (15) for illuminating a pulsed laser light beam to an amorphous silicon film (1). The illuminating optical system (15) manages control for moving a laser spot so that a plural number of light pulses will be illuminated on the same location on the amorphous silicon film (1). The laser oscillator (12) radiates a laser light beam of a pulse generation period shorter than the reference period. The reference period is a time interval as from the radiation timing of illumination of a pulsed laser light beam on the surface of the film (1) until the timing of reversion of the substrate temperature raised due to the illumination of the laser light beam to the original substrate temperature.
摘要翻译：激光退火装置（10）包括激光振荡器（12），辐射预设周期的脉冲激光束，以及用于将脉冲激光束照射到非晶硅膜（1）的照明光学系统（15）。照明光学系统（15）管理用于移动激光光斑的控制，使得多个光脉冲将被照射在非晶硅膜（1）上的相同位置。激光振荡器（12）辐射比参考周期短的脉冲发生时段的激光束。参考周期是从在膜（1）的表面上的脉冲激光束的照射的辐射定时直到由于激光束照射到基板温度升高的定时的时间间隔原始基板温度。

4. 发明授权

US06632711B2 Process for producing thin film semiconductor device and laser irradiation apparatus 失效
标题翻译：薄膜半导体器件和激光照射设备的制造方法
公开(公告)号：US06632711B2
公开(公告)日：2003-10-14
申请号：US09731905
申请日：2000-12-08
申请人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
发明人： Yukiyasu Sugano , Masahiro Fujino , Michio Mano , Akihiko Asano , Masumitsu Ino , Takenobu Urazono , Makoto Takatoku
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/2026 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L29/78678
摘要： A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.
摘要翻译：通过使用激光改善半导体薄膜的结晶处理，获得质量好的多晶薄膜。在基板的表面上进行形成非单晶半导体薄膜的成膜工序后，通过用激光照射进行退火工序，将非单晶半导体薄膜转换为多晶材料。通过将激光的横截面形状改变并调整到规定的区域来进行退火步骤。半导体薄膜用发光时间宽度从50ns以上的发光时间宽度的激光脉冲照射一次以上，并且具有恒定的横截面积，以将包含在照射区域中的半导体薄膜对应于一次的多晶材料的横截面积。此时，控制从升降到下降的激光的能量强度以应用期望的变化。根据该方法，可以获得具有大粒径或均匀粒径的多晶材料。在某些情况下，在用激光照射时，可将基底保持在非氧化性气氛中，或者可以加热或冷却。

5. 发明授权

US4968384A Method of producing carbon-doped amorphous silicon thin film 失效
标题翻译：生产碳掺杂非晶硅薄膜的方法
公开(公告)号：US4968384A
公开(公告)日：1990-11-06
申请号：US407300
申请日：1989-09-14
申请人： Akihiko Asano
发明人： Akihiko Asano
IPC分类号： H01L21/205 , H01L31/04 , H01L31/20
CPC分类号： H01L21/02422 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.
摘要翻译：一种在衬底上生产碳掺杂非晶硅薄膜的方法，包括以下步骤：通过等离子体辅助化学气相沉积生长掺杂碳的非晶硅层，包括在硅烷气体和烃的气体混合物中产生辉光放电气体，并将所述碳掺杂非晶硅层暴露于含氢气体中的等离子体，以获得具有规定的光电导率值的合成层。

6. 发明授权

US07550326B2 Method for manufacturing thin film device and semiconductor device 有权
标题翻译：制造薄膜器件和半导体器件的方法
公开(公告)号：US07550326B2
公开(公告)日：2009-06-23
申请号：US11536482
申请日：2006-09-28
申请人： Akihiko Asano , Tomoatsu Kinoshita
发明人： Akihiko Asano , Tomoatsu Kinoshita
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , G02F2001/133302 , G02F2001/136222 , H01L27/1214 , H01L27/1251 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L2221/68368
摘要： The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first substrate (101) through a first adhesive layer (105), then, completely or partly removing the first substrate (101) in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate (109) to the exposed protective layer (102) or the protective layer (102) covered with the partly removed first substrate (101) through a second adhesive layer (108) and separating or removing the second substrate (106). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.
摘要翻译：薄膜器件的制造方法技术领域本发明涉及薄膜器件的制造方法。薄膜器件通过将第二衬底（106）通过第一粘合剂层（105）粘合到形成在第一衬底（101）上的保护层（102）上的薄膜器件层（103）而制造，根据包括化学过程和机械抛光工艺的至少一个工艺的工艺完全或部分地去除第一衬底（101），将第三衬底（109）接合到暴露的保护层（102）或保护层（ 102）通过第二粘合剂层（108）被部分去除的第一基板（101）覆盖并分离或移除第二基板（106）。因此，制造适合于轻薄型显示面板的薄膜器件，而不会劣化粗糙度。

7. 发明申请

US20070090404A1 PROCESS FOR THE FABRICATION OF THIN-FILM DEVICE AND THIN-FILM DEVICE 审中-公开
标题翻译：制造薄膜器件和薄膜器件的方法
公开(公告)号：US20070090404A1
公开(公告)日：2007-04-26
申请号：US11567812
申请日：2006-12-07
申请人： Tomoatsu Kinoshita , Akihiko Asano
发明人： Tomoatsu Kinoshita , Akihiko Asano
IPC分类号： H01L27/10
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/1214 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L29/78621
摘要： A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.
摘要翻译：通过在第一基板上逐个形成保护层和薄膜器件层并经由第一粘合剂层或涂层和第一粘合剂将薄膜器件层上的第二衬底接合来制造薄膜器件至少通过用化学溶液进行蚀刻来去除第一衬底，通过第二粘合剂层将覆盖薄膜器件层的第一衬底侧的保护层与第三衬底接合，并移除第二基板。保护层由至少两层具有抵抗在去除第一基底时使用的化学溶液的层形成。

8. 发明授权

US5456764A Solar cell and a method for the manufacture thereof 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5456764A
公开(公告)日：1995-10-10
申请号：US361847
申请日：1994-12-21
申请人： Akihiko Asano , Yukimi Ichikawa
发明人： Akihiko Asano , Yukimi Ichikawa
IPC分类号： H01L31/04 , H01L31/0745 , H01L31/20 , H01L31/072
CPC分类号： H01L31/0745 , H01L31/0747 , H01L31/20 , Y02E10/50
摘要： Solar cell made using a heterojunction formed from a crystalline silicon layer of a first conductivity type and a hydrogenated amorphous silicon film of a second conductivity type different from the first conductivity type. The hydrogenated amorphous silicon film includes oxygen.
摘要翻译：使用由第一导电类型的晶体硅层和不同于第一导电类型的第二导电类型的氢化非晶硅膜形成的异质结制成的太阳能电池。氢化非晶硅膜包括氧。

9. 发明授权

US5061322A Method of producing p-type amorphous silicon carbide and solar cell including same 失效
标题翻译：生产p型非晶碳化硅的方法及包括其的太阳能电池
公开(公告)号：US5061322A
公开(公告)日：1991-10-29
申请号：US408258
申请日：1989-09-18
申请人： Akihiko Asano
发明人： Akihiko Asano
IPC分类号： H01L21/205 , H01L31/04 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/931
摘要： A method of producing a p-type hydrogenated amorphous silicon carbide thin film comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon or a fluocarbon, and a boron compound, diluting the raw material gas mixture with hydrogen gas, and decomposing the raw material gas mixture by glow discharge to achieve a resultant film having a prescribed value of photoconductivity with a reduced optical absorption coefficient.
摘要翻译：一种制造p型氢化非晶碳化硅薄膜的方法，包括以下步骤：制备由硅化合物，烃或氟化碳组成的原料气体混合物和硼化合物，用氢气稀释原料气体混合物并通过辉光放电分解原料气体混合物，以获得具有降低的光吸收系数的具有规定值的光电导率的所得膜。

10. 发明授权

US07790521B2 Thin film semiconductor device, method of manufacturing the same and display 失效
标题翻译：薄膜半导体器件及其制造方法和显示器
公开(公告)号：US07790521B2
公开(公告)日：2010-09-07
申请号：US11753751
申请日：2007-05-25
申请人： Akihiko Asano
发明人： Akihiko Asano
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1281 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02532 , H01L21/02686 , H01L21/02691 , H01L21/268 , H01L27/1296
摘要： A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process.
摘要翻译：公开了制造薄膜半导体器件的方法。该方法包括以下步骤：形成用于在基板上反射和吸收光的光反射和吸收层; 将光反射和吸收层图案化成规定的形状; 形成覆盖图案化的光反射和吸收层的绝缘膜; 在所述绝缘膜上形成含有多晶粒的半导体薄膜; 以及通过照射脉冲振荡激光来使半导体薄膜激光退火以使半导体薄膜结晶。激光退火步骤包括加热过程和冷却过程。

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