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1. 发明授权

US5766964A Processes for producing low cost, high efficiency silicon solar cells 失效
标题翻译：生产低成本，高效率硅太阳能电池的工艺
公开(公告)号：US5766964A
公开(公告)日：1998-06-16
申请号：US579074
申请日：1995-12-22
申请人： Ajeet Rohatgi , Parag Doshi , John Keith Tate , Jose Mejia , Zhizhang Chen
发明人： Ajeet Rohatgi , Parag Doshi , John Keith Tate , Jose Mejia , Zhizhang Chen
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x. In a fourth RTP process, the process of applying front and back contacts is broken up into two separate respective steps, which enhances the efficiency of the cells, at a slight time expense. In a fifth RTP process, a second RTP step is utilized to fire and adhere the screen printed or evaporated contacts to the structure.
摘要翻译：提供利用快速热处理（RTP）的方法用于廉价生产高效硅太阳能电池。 RTP工艺保护少数载体体积寿命τ，并允许选择性地调整硅衬底内扩散区的深度，包括发射极和背面场（bsf）。在第一RTP工艺中，利用RTP步骤同时将磷和铝分别扩散到硅衬底的前表面和后表面。此外，原位控制的冷却程序保留载体体积寿命τ，并允许对扩散区域的深度的选择性调节。在第二个RTP过程中，在RTP步骤中完成磷和铝的同时扩散以及前后接触的退火。在第三RTP工艺中，RTP步骤同时实现磷和铝的扩散，接触退火，以及双层抗反射/钝化涂层SiN / SiOx的退火。在第四个RTP过程中，应用前端和后端触点的过程被分解成两个分开的各个步骤，这可以以小的时间花费增加电池的效率。在第五RTP过程中，使用第二RTP步骤来将丝网印刷或蒸发的触点发射并粘附到结构上。

2. 发明授权

US5510271A Processes for producing low cost, high efficiency silicon solar cells 失效
标题翻译：生产低成本，高效率硅太阳能电池的工艺
公开(公告)号：US5510271A
公开(公告)日：1996-04-23
申请号：US303340
申请日：1994-09-09
申请人： Ajeet Rohatgi , Zhizhang Chen , Parag Doshi
发明人： Ajeet Rohatgi , Zhizhang Chen , Parag Doshi
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02168 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Processes which utilize rapid thermal processing (RTP) are provided for inexpensively producing high efficiency silicon solar cells. The RTP processes preserve minority carrier bulk lifetime .tau. and permit selective adjustment of the depth of the diffused regions, including emitter and back surface field (bsf), within the silicon substrate. Silicon solar cell efficiencies of 16.9% have been achieved. In a first RTP process, an RTP step is utilized to simultaneously diffuse phosphorus and aluminum into the front and back surfaces, respectively, of a silicon substrate. Moreover, an in situ controlled cooling procedure preserves the carrier bulk lifetime .tau. and permits selective adjustment of the depth of the diffused regions. In a second RTP process, both simultaneous diffusion of the phosphorus and aluminum as well as annealing of the front and back contacts are accomplished during the RTP step. In a third RTP process, the RTP step accomplishes simultaneous diffusion of the phosphorus and aluminum, annealing of the contacts, and annealing of a double-layer antireflection/passivation coating SiN/SiO.sub.x.
摘要翻译：提供利用快速热处理（RTP）的方法用于廉价生产高效硅太阳能电池。 RTP工艺保护少数载体体积寿命τ，并允许选择性地调整硅衬底内扩散区的深度，包括发射极和背面场（bsf）。硅太阳能电池效率达到16.9％。在第一RTP工艺中，利用RTP步骤同时将磷和铝分别扩散到硅衬底的前表面和后表面。此外，原位控制的冷却程序保留载体体积寿命τ，并允许对扩散区域的深度的选择性调节。在第二个RTP过程中，在RTP步骤中完成磷和铝的同时扩散以及前后接触的退火。在第三RTP工艺中，RTP步骤同时实现磷和铝的扩散，接触退火，以及双层抗反射/钝化涂层SiN / SiOx的退火。

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