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1. 发明专利

JP2008305939A Forming method of polycrystal semiconductor film, thin-film transistor, and manufacturing method of same thin-film transistor 审中-公开
标题翻译：多晶半导体膜，薄膜晶体管的形成方法和同一薄膜晶体管的制造方法
公开(公告)号：JP2008305939A
公开(公告)日：2008-12-18
申请号：JP2007151158
申请日：2007-06-07
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： IGA DAISUKE , TANIGUCHI YUKIO
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
CPC分类号： H01L21/02675 , B23K26/066 , H01L21/02422 , H01L21/02532 , H01L21/02609
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a polycrystal semiconductor film which can prevent the generation of the short-circuit performed between two adjacent TFTs to each other surely. SOLUTION: In the forming method of the polycrystal semiconductor film subjected to the crystal growth performed along a first direction on an insulating substrate, crystal grains (15a) subjected to the crystal growth performed in a first sense (Fas, Faf) of the first direction and crystal grains (15b) subjected to the crystal growth performed in a second inverse sense (Fbs, Fbf) to the first sense (Fas, Faf) of the first direction are so controlled on the insulating substrate with respect to their crystal growths that the impingements performed between the crystal grains of the sense (Faf) and the crystal grains of the sense (Fbf) which are present in a plurality of spaced regions in the second direction orthogonal to the first direction occur earlier than the impingements performed between the crystal grains of the sense (Fas) and the crystal grains of the sense (Fbs) which are present in a plurality of other spaced regions in the second direction orthogonal to the first direction. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种多晶半导体膜的形成方法，其可以防止两个相邻的TFT彼此之间产生短路。解决方案：在绝缘基板上沿着第一方向进行晶体生长的多晶半导体膜的形成方法中，在第一感（Fas，Faf）上进行晶体生长的晶粒（15a）第一方向的第一方向和第一方向的第二反射（Fbs，Fbf）到第一感测（Fas，Faf）的晶体生长的晶粒（15b）相对于其晶体被如此地控制在绝缘基板上存在于与第一方向正交的第二方向上的多个间隔区域中存在感测晶体（Faf）和感测晶粒（Fbf）之间的冲击的冲击的发生早于在第一方向之间执行的冲击存在于与第一方向正交的第二方向上的多个其它间隔区域中的感测的晶粒（Fas）和感测晶体（Fbs）。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008294460A Method for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008294460A
公开(公告)日：2008-12-04
申请号：JP2008182518
申请日：2008-07-14
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： JUMONJI MASAYUKI , MATSUMURA MASAKIYO , KIMURA YOSHINOBU , NISHITANI MIKIHIKO , HIRAMATSU MASAHITO , TANIGUCHI YUKIO , NAKANO FUMIKI
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To achieve crystallization with a desired crystal grain size in a selected region of a semiconductor layer.
SOLUTION: A beam profile modulation section is disposed between the substrate of a moving stage and a laser beam source, the beam profile of a laser beam on the substrate surface is modulated so as to match a preset target, the semiconductor layer on the substrate is irradiated with the modulated laser beam, and this allows the crystal to be grown in the lateral direction to achieve crystallization with the desired crystal grain size.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在半导体层的选定区域中实现所需晶粒尺寸的结晶。解决方案：光束轮廓调制部分设置在移动台的基板和激光束源之间，调制基板表面上的激光束的光束轮廓以匹配预设的目标，半导体层在用调制的激光束照射基板，这允许晶体沿横向生长以获得具有所需晶粒尺寸的结晶。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008249691A Device and method for measuring aberration 审中-公开
标题翻译：用于测量异常的装置和方法
公开(公告)号：JP2008249691A
公开(公告)日：2008-10-16
申请号：JP2008035379
申请日：2008-02-16
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO
IPC分类号： G01M11/02 , G01J9/00
CPC分类号： G01M11/0264 , G01M11/0257
摘要： PROBLEM TO BE SOLVED: To provide an aberration measuring device capable of measuring the aberration of an imaging optics in a light incidence state close to an actual use condition, for example. SOLUTION: This aberration measuring device for measuring the aberration of the imaging optics 10 includes lighting systems 1 and 2 for supplying measuring light used for measuring the aberration of the imaging optics and background light other than the measuring light, a separating member 3 for separating the measuring light having passed the imaging optics from the background light, and a measuring section 4 for measuring the aberration of the imaging optics based on the measuring light separated by the separating member. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种例如能够在接近实际使用条件的光入射状态下测量成像光学元件的像差的像差测量装置。解决方案：用于测量成像光学器件10的像差的像差测量装置包括用于提供用于测量成像光学系统的像差的测量光和除了测量光之外的背景光的照明系统1和2，分离部件3 用于将通过成像光学元件的测量光与背景光分离;以及测量部分4，用于基于由分离部件分离的测量光来测量成像光学元件的像差。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008244117A Crystallization apparatus, crystallization method, device, and light modulation element 审中-公开
标题翻译：结晶装置，结晶方法，装置和光调制元件
公开(公告)号：JP2008244117A
公开(公告)日：2008-10-09
申请号：JP2007082240
申请日：2007-03-27
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a crystallization method, by which a second irradiation is preferably and stably performed by high-precisely controlling a relation between the minimum intensity of a light intensity distribution and a melt strength of a semiconductor film in the second irradiation of a twice radiation method.
SOLUTION: The crystallization method, by which light of a predetermined light intensity distribution is radiated to a non-monocrystalline semiconductor film to generate a crystallized semiconductor film, includes: a first radiation step of radiating light of a light intensity gradient distribution having an intensity gradient along the primary direction to the non-monocrystalline semiconductor film; and a second radiation step of radiating to the non-monocrystalline semiconductor film the light of a synthetic distribution with: a V character version light intensity distribution (51) in which the light intensity changes in the shape of a V character and in a single dimension along a second direction which almost perpendicularly intersects the first direction; and a DIP version light intensity distribution (52) in which the light intensity changes in the shape of a DIP and in the single dimension along the second direction in a bottom of this V character version light intensity distribution (51).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种结晶方法，其中通过高精度地控制光强度分布的最小强度和半导体膜的熔体强度之间的关系来优选和稳定地进行第二次照射二次照射两次辐射法。解决方案：将预定的光强度分布的光照射到非单晶半导体膜以产生结晶的半导体膜的结晶方法包括：第一辐射步骤，其辐射光强度梯度分布的光，其具有沿主要方向向非单晶半导体膜的强度梯度; 以及第二辐射步骤，通过以下方式向非单晶半导体膜辐射合成分布的光：V字形版本光强度分布（51），其中光强度以V字形形状变化，并且具有单维沿着与第一方向几乎垂直相交的第二方向; 以及DIP版本的光强度分布（52），其中在该V字符版本光强度分布（51）的底部中，光强度在DIP形状上沿着第二方向在单一维度上变化。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2006293330A Photomask, phase shift mask and exposure apparatus 审中-公开
标题翻译： PHOTOMASK，相位移屏蔽和曝光装置
公开(公告)号：JP2006293330A
公开(公告)日：2006-10-26
申请号：JP2006064797
申请日：2006-03-09
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO
IPC分类号： G02B5/30 , G03F1/26 , G03F1/34 , G03F1/68 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To solve a problem of decrease in transmissive light which partly occurs at a boundary between two polarization modulation regions of a polarized phase shift mask. SOLUTION: A photomask for use in an exposure apparatus which forms an exposure pattern by illumination includes at least two polarization modulation regions (131, 132) adjacent to each other which produce mutually incoherent polarized light components, at least two phase modulation regions (133, 134) adjacent to each other which impart a phase difference of 180 degrees, and amplitude modulation regions (143) which decrease transmittance. A contact line between the polarization modulation regions and a contact line between the phase modulation regions are located at a corresponding position, and the amplitude modulation regions are provided on both sides of the common contact line, with a predetermined distance from the common contact line. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了解决部分发生在偏振相移掩模的两个偏振调制区域之间的边界处的透射光减少的问题。解决方案：用于通过照明形成曝光图案的曝光装置中的光掩模包括彼此相邻的至少两个偏振调制区域（131,132），其产生相互非相干的偏振光分量，至少两个相位调制区域（133,134）彼此相邻并且具有180度的相位差，以及降低透射率的幅度调制区域（143）。偏振调制区域和相位调制区域之间的接触线之间的接触线位于相应位置处，并且幅度调制区域设置在公共接触线的两侧，距离公共接触线具有预定的距离。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2005244195A Light irradiator, crystallization equipment, crystallization method, device, and optical modulation element 有权
标题翻译：光照射器，结晶器件，结晶方法，器件和光学调制元件
公开(公告)号：JP2005244195A
公开(公告)日：2005-09-08
申请号：JP2005013499
申请日：2005-01-21
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To obtain crystallization equipment and a method in which a desired reverse peak light intensity distribution can be formed stably based on the deep depth of a focus, the filling rate of crystal grains formed on a semiconductor film can be raised, and epitaxial growth can be accomplished without generating ablation. SOLUTION: The light irradiator comprises an optical modulation element (1) having a pattern where phase differences of phase modulation amounts substantially different at 180° are arranged at a first interval, a light beam split element (2) for splitting an incident light beam into two light beams of different polarization states, and an image forming optical system (4) for forming a predetermined reverse peak light intensity distribution corresponding to the combination of two light intensity distributions spaced apart from each other by a second interval on a predetermined plane (5) based on the two light beams passed through the optical modulation element and the light beam split element. The second interval corresponds to odd times of the first interval. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了获得结晶设备和可以基于焦深深度稳定地形成期望的反向峰值光强度分布的方法，形成在半导体膜上的晶粒的填充率可以是可以在不产生消融的情况下实现升高和外延生长。解决方案：光照射器包括光调制元件（1），光调制元件（1）具有在第一间隔处布置相位调制量相差大于180°的相位调制量的图案，用于分离入射的光束分离元件（2）光束分成两个不同极化状态的光束;以及图像形成光学系统（4），用于形成预定的反向峰值光强度分布，该预定的反向峰值光强度分布对应于两个光强度分布的组合，间隔彼此间隔预定基于通过光调制元件和光束分离元件的两个光束的平面（5）。第二间隔对应于第一间隔的奇数次。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2005244194A Light irradiator, crystallization equipment, crystallization method, and device 有权
标题翻译：光照射器，结晶器件，结晶方法及器件
公开(公告)号：JP2005244194A
公开(公告)日：2005-09-08
申请号：JP2005013498
申请日：2005-01-21
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To obtain crystallization equipment in which a desired reverse peak light intensity distribution can be formed stably based on the deep depth of a focus, and the filling rate of crystal grains formed on a semiconductor film can be raised. SOLUTION: The light irradiator comprises an optical modulation element (1) having a pattern for forming a reverse peak light intensity distribution based on an incident light beam, a light beam split element (2) for splitting an incident light beam into two light beams of different polarization states, and an image forming optical system (4) for forming a predetermined light intensity distribution corresponding to the combination of two reverse peak light intensity distributions spaced apart from each other on a predetermined plane (5) based on a light beam passed through the optical modulation element and the light beam split element. A crystallized semiconductor film is formed by irradiating a semiconductor film set on the predetermined plane with light having a predetermined intensity distribution. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了获得可以基于焦深的深度稳定地形成期望的反向峰值光强度分布的结晶设备，并且可以提高形成在半导体膜上的晶粒的填充率。解决方案：光照射器包括具有基于入射光束形成反向峰值光强度分布的图案的光学调制元件（1），用于将入射光束分成两个的光束分离元件（2）具有不同极化状态的光束以及形成光学系统（4）的图像形成光学系统（4），用于形成对应于基于光的预定平面（5）上彼此间隔开的两个反向峰值光强度分布的组合的预定光强分布光束通过光调制元件和光束分离元件。通过用预定的强度分布的光照射在预定平面上设置的半导体膜来形成结晶的半导体膜。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005216893A Optical irradiation device, apparatus and method of crystallization, device and optical modulation element 审中-公开
标题翻译：光学辐射装置，装置和结晶方法，装置和光学调制元件
公开(公告)号：JP2005216893A
公开(公告)日：2005-08-11
申请号：JP2004017946
申请日：2004-01-27
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a crystallization apparatus which can form in a predetermined side intensity distribution of the shape of an inverse peak of a request which suppresses peak shape generated on both sides of the inverse peak. SOLUTION: The crystallization apparatus includes an optical modulation element (1) for forming the inverse peak-like distribution intensity by a level difference, and an image formation optical system (3) for forming an intensity distribution corresponding predetermined to inverse peak-like distribution intensity on a predetermined side (4) based on a flux of light through the optical modulation element. The optical modulation element has a light shield region or a phase modulation region prepared near the level difference in order to suppress the peak shape generated on both the sides of the inverse peak in the inverse peak-like distribution intensity. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种结晶装置，其能够以抑制逆峰两侧产生的峰值形状的请求的反峰值的形状的预定侧向强度分布形成。解决方案：结晶装置包括用于通过电平差形成反峰值分布强度的光调制元件（1）和用于形成预定到反峰值分布强度的强度分布的图像形成光学系统（3）基于通过光调制元件的光通量在预定侧（4）上的分布强度。光调制元件具有在电平差附近准备的遮光区域或相位调制区域，以便抑制在反峰值分布强度下在反向峰值的两侧产生的峰值形状。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005039259A Crystallization method, crystallization equipment, thin-film transistor (tft), and display device 审中-公开
标题翻译：结晶方法，结晶设备，薄膜晶体管（TFT）和显示器件
公开(公告)号：JP2005039259A
公开(公告)日：2005-02-10
申请号：JP2004191803
申请日：2004-06-29
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： OGAWA HIROYUKI , HIRAMATSU MASAHITO , KIMURA YOSHINOBU , JUMONJI MASAYUKI , TANIGUCHI YUKIO , MATSUMURA MASAKIYO
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a crystallization method, crystallization equipment, a thin-film transistor, and a display device that can minutely form crystal grains with a large grain diameter over a film and can meet low-temperature treatment requirements. SOLUTION: As an insulating film, at least a silicon oxide film and a silicon nitride film are laminated, in the order to a laser beam incidence plane of a non-single-crystalline semiconductor film up to a prescribed thickness, and a uniform laser beam that is phase-modulated to a specific light intensity distribution is irradiated to the non-single-crystalline semiconductor film from the insulating film side. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004336013A Annealing method, annealing apparatus, and display 审中-公开
公开(公告)号：JP2004336013A
公开(公告)日：2004-11-25
申请号：JP2004081306
申请日：2004-03-19
申请人： Advanced Lcd Technologies Development Center Co Ltd , 株式会社液晶先端技術開発センター
发明人： JUMONJI MASAYUKI , MATSUMURA MASAKIYO , KIMURA YOSHINOBU , HIRAMATSU MASAHITO , TANIGUCHI YUKIO , OGAWA HIROYUKI
IPC分类号： G02F1/1345 , G02F1/1368 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide an annealing method, an annealing apparatus, and a display whereby semiconductor layers of two or more average grain sizes can be formed on the same substrate. SOLUTION: A phase shifter is inserted between a laser light source and a beam profile measuring section. The intensity and distribution of a laser beam and a gap d are measured when a beam profile measuring section is irradiated with a modulated light beam. The phase shifter is inserted between a substrate and the laser light source. The substrate is irradiated with the modulated light beam. The intensity and distribution of the laser beam and the gap d are measured when it is proved that a semiconductor thin film is crystallized by irradiation with the laser beam and grows in a lateral direction. Target values of the intensity and distribution of the laser beam and the gap d are set according to the measurement results. The intensity and distribution of the laser beam and the gap d are controlled so as to reach the set target values. The substrate is irradiated with the modulated laser beam under the control condition. COPYRIGHT: (C)2005,JPO&NCIPI

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