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1. 发明申请

US20100226409A1 TEMPERATURE SENSOR 有权
标题翻译：温度感应器
公开(公告)号：US20100226409A1
公开(公告)日：2010-09-09
申请号：US12161760
申请日：2007-01-19
申请人： Adarsh Sandhu , Takuya Yamamura , Makoto Taoda , Zaki Primadani
发明人： Adarsh Sandhu , Takuya Yamamura , Makoto Taoda , Zaki Primadani
IPC分类号： G01K7/22
CPC分类号： G01K7/22 , G01K7/40
摘要： This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.
摘要翻译：本发明提供一种温度传感器，其可以测量微区域的精确温度，其可以测量从低温到高温的宽范围内的温度，并且具有简单的结构。温度传感器包括二维电子气。使用二维电子气的电阻来测量温度。二维电子气体可以具有选自AlGaN / GaN系统，AlGaAs / GaAs系统，InAs / GaAs系统，InAs / GaSb / AlSb系统，SiGe / Si系统，SiC / Si系统，CdTe / HgTe / CdTe系统，InGaAs / InAlAs / InP系统和纳米晶硅。

2. 发明授权

US08449180B2 Temperature sensor 有权
标题翻译：温度感应器
公开(公告)号：US08449180B2
公开(公告)日：2013-05-28
申请号：US12161760
申请日：2007-01-19
申请人： Adarsh Sandhu , Takuya Yamamura , Makoto Taoda , Zaki Primadani
发明人： Adarsh Sandhu , Takuya Yamamura , Makoto Taoda , Zaki Primadani
IPC分类号： G01K7/16 , G01K11/00
CPC分类号： G01K7/22 , G01K7/40
摘要： This invention is to provide a temperature sensor which can measure a precise temperature of a minute region, which can measure a temperature in a wide range from a low temperature to a high temperature, and which has a simple structure. The temperature sensor comprises a two-dimensional electron gas. A resistance of the two-dimensional electron gas is used to measure a temperature. The two-dimensional electron gas may have a heterostructure selected from the group consisting of an AlGaN/GaN system, an AlGaAs/GaAs system, an InAs/GaAs system, an InAs/GaSb/AlSb system, a SiGe/Si system, a SiC/Si system, a CdTe/HgTe/CdTe system, an InGaAs/InAlAs/InP system, and nanocrystalline silicon.
摘要翻译：本发明提供一种温度传感器，其可以测量微区域的精确温度，其可以测量从低温到高温的宽范围内的温度，并且具有简单的结构。温度传感器包括二维电子气。使用二维电子气的电阻来测量温度。二维电子气体可以具有选自AlGaN / GaN系统，AlGaAs / GaAs系统，InAs / GaAs系统，InAs / GaSb / AlSb系统，SiGe / Si系统，SiC / Si系统，CdTe / HgTe / CdTe系统，InGaAs / InAlAs / InP系统和纳米晶硅。

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