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1. 发明申请

US20070094634A1 Method for checking printability of a lithography target 失效
标题翻译：用于检查光刻目标的可印刷性的方法
公开(公告)号：US20070094634A1
公开(公告)日：2007-04-26
申请号：US11504928
申请日：2006-08-16
申请人： Abdurrahman Seizginer , Bayram Yenikaya
发明人： Abdurrahman Seizginer , Bayram Yenikaya
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.
摘要翻译：当光学邻近校正的结果不能满足可印刷性的设计要求时，确定无需进行光学邻近校正的技术。所公开的实施例应用于制造光掩模的方法，该光掩模用于通过用光辐射曝光来在晶片上印刷图案以将晶片上的光掩模光学成像。提出了一种用于检查建议用于定义光掩模的目标布局的可印刷性的方法，包括以下步骤：导出表示相对于目标布局的一组设计要求的不等式系统; 并通过确定不等式系统是否可行来检查目标布局的可印刷性。

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