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    • 3. 发明授权
    • Gate signal adjustment circuit
    • 门信号调节电路
    • US09319036B2
    • 2016-04-19
    • US13112862
    • 2011-05-20
    • Shih Chang ChangTing-Kuo ChangAbbas Jamshidi RoudbariCheng-Ho Yu
    • Shih Chang ChangTing-Kuo ChangAbbas Jamshidi RoudbariCheng-Ho Yu
    • G06F3/038H03K5/12G09G3/32G09G3/36
    • H03K5/12G09G3/3266G09G3/3677G09G2330/06
    • A gate signal adjustment circuit for a display is disclosed. The gate signal adjustment circuit can adjust a transition time of a gate signal used to drive data displaying. The adjustment can be to either speed up or slow down the transition time according to the requirements of the display. In an example, the gate signal adjustment circuit can include multiple transistors, where a first set of the transistors outputs the gate signal and a second set of the transistors outputs an adjustment to the gate signal. The second set of transistors can be the same or different sizes depending on the desirable number of adjustment options. The circuit can also include a control line coupled to the second set of transistors to control the adjustment output. Gate signal adjustment can reduce crosstalk in the display.
    • 公开了一种用于显示器的门信号调节电路。 门信号调整电路可以调整用于驱动数据显示的门信号的转换时间。 调整可以根据显示器的要求加快或减慢转换时间。 在一个示例中,门信号调整电路可以包括多个晶体管,其中第一组晶体管输出栅极信号,第二组晶体管输出对栅极信号的调整。 第二组晶体管可以是相同或不同的尺寸,这取决于所需数量的调节选项。 电路还可以包括耦合到第二组晶体管的控制线以控制调节输出。 门信号调整可以减少显示屏中的串扰。
    • 9. 发明申请
    • GATE SIGNAL ADJUSTMENT CIRCUIT
    • 门信号调整电路
    • US20120293485A1
    • 2012-11-22
    • US13112862
    • 2011-05-20
    • Shih Chang ChangTing-Kuo ChangAbbas Jamshidi RoudbariCheng-Ho Yu
    • Shih Chang ChangTing-Kuo ChangAbbas Jamshidi RoudbariCheng-Ho Yu
    • G09G5/00H03K5/12
    • H03K5/12G09G3/3266G09G3/3677G09G2330/06
    • A gate signal adjustment circuit for a display is disclosed. The gate signal adjustment circuit can adjust a transition time of a gate signal used to drive data displaying. The adjustment can be to either speed up or slow down the transition time according to the requirements of the display. In an example, the gate signal adjustment circuit can include multiple transistors, where a first set of the transistors outputs the gate signal and a second set of the transistors outputs an adjustment to the gate signal. The second set of transistors can be the same or different sizes depending on the desirable number of adjustment options. The circuit can also include a control line coupled to the second set of transistors to control the adjustment output. Gate signal adjustment can reduce crosstalk in the display.
    • 公开了一种用于显示器的门信号调节电路。 门信号调整电路可以调整用于驱动数据显示的门信号的转换时间。 调整可以根据显示器的要求加快或减慢转换时间。 在一个示例中,门信号调整电路可以包括多个晶体管,其中第一组晶体管输出栅极信号,第二组晶体管输出对栅极信号的调整。 第二组晶体管可以是相同或不同的尺寸,这取决于所需数量的调节选项。 电路还可以包括耦合到第二组晶体管的控制线以控制调节输出。 门信号调整可以减少显示屏中的串扰。
    • 10. 发明申请
    • Two Doping Regions in Lightly Doped Drain for Thin Film Transistors and Associated Doping Processes
    • 用于薄膜晶体管和相关掺杂过程的轻掺杂漏极中的两个掺杂区域
    • US20140061656A1
    • 2014-03-06
    • US13601535
    • 2012-08-31
    • Cheng-Ho YuYoung Bae ParkShih Chang Chang
    • Cheng-Ho YuYoung Bae ParkShih Chang Chang
    • H01L27/15H01L33/08
    • H01L29/78621H01L27/1288H01L29/78645H01L29/78696
    • A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack that includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area, and doping the second portion of the doped semiconductor layer with a third doping dose.
    • 提供了一种制造用于具有像素阵列的LCD的薄膜晶体管(TFT)的方法。 该方法包括在包括导电栅极层的TFT堆叠的一部分上沉积第一光致抗蚀剂层和半导体层。 该方法还包括以第一掺杂剂量掺杂暴露的半导体层。 该方法还包括蚀刻导电栅极层的一部分以暴露半导体层的一部分,并以第二掺杂剂量掺杂半导体层的暴露部分。 该方法还包括在像素的有源区域中在掺杂半导体层的第一部分上沉积第二光致抗蚀剂层,以在有源区域周围的区域中暴露掺杂半导体层的第二部分,以及掺杂半导体层的第二部分 掺杂半导体层具有第三掺杂剂量。