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1. 发明授权

US10283333B2 Nanocluster production device 有权
公开(公告)号：US10283333B2
公开(公告)日：2019-05-07
申请号：US14893775
申请日：2014-05-26
申请人： Japan Science and Technology Agency , Ayabo Corporation
发明人： Atsushi Nakajima , Hironori Tsunoyama , Chuhang Zhang , Hiroki Akatsuka , Keizo Tsukamoto
IPC分类号： H01J37/34 , H01J37/32 , C23C14/14 , C23C14/34 , C23C14/35 , H01J37/08
摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

2. 发明授权

US11059014B2 Nanocluster liquid dispersion, nanocluster film, nanocluster solid dispersion, method for producing nanocluster liquid dispersion, and device for producing nanocluster liquid dispersion 有权
公开(公告)号：US11059014B2
公开(公告)日：2021-07-13
申请号：US15752986
申请日：2016-08-12
申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY , AYABO CORPORATION
发明人： Atsushi Nakajima , Hironori Tsunoyama , Hiroki Akatsuka , Keizo Tsukamoto
IPC分类号： B01J13/00 , C23C14/00 , B82Y5/00 , C23C14/34 , B22F1/00 , B22F9/24 , B82Y30/00 , B82Y40/00
摘要： The present invention relates to a nanocluster liquid dispersion where nanoclusters with a predetermined number of atoms are dispersed.

3. 发明申请

US20160111262A1 Nanocluster Production Device 审中-公开
标题翻译：纳米簇生产装置
公开(公告)号：US20160111262A1
公开(公告)日：2016-04-21
申请号：US14893775
申请日：2014-05-26
申请人： AYABO CORPORATION , JAPAN SCIENCE AND TECHNOLOGY AGENCY
发明人： Atsushi Nakajima , Hironori Tsunoyama , Chuhang Zhang , Hiroki Akatsuka , Keizo Tsukamoto
IPC分类号： H01J37/34 , C23C14/14 , C23C14/34 , H01J37/32 , C23C14/35
CPC分类号： H01J37/3405 , C23C14/14 , C23C14/3485 , C23C14/35 , H01J37/08 , H01J37/3244 , H01J37/32715 , H01J37/34 , H01J37/3426 , H01J37/3467 , H01J2237/081 , H01J2237/0812
摘要： Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.
摘要翻译：使用纳米簇生产装置改善纳米簇的尺寸和结构的控制。希望增加获得的量和具有尺寸和结构的纳米簇的产量，其中至少一个被选择。纳米簇生产装置具有真空室，通过脉冲放电产生等离子体的溅射源，向溅射源供给脉冲功率的脉冲电源，向溅射源供给第一惰性气体的第一惰性气体供给装置，存储在真空室中的簇生长池和将第二惰性气体引入聚集体生长池中的第二惰性气体引入装置。

4. 发明申请

US20160005577A1 Pulsed Sputtering Apparatus and Pulsed Sputtering Method 审中-公开
标题翻译：脉冲溅射装置和脉冲溅射法
公开(公告)号：US20160005577A1
公开(公告)日：2016-01-07
申请号：US14770792
申请日：2014-02-19
申请人： AYABO CORPORATION
发明人： Keizo Tsukamoto
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34
CPC分类号： H01J37/3467 , C23C14/3485 , C23C14/3492 , H01J37/32449
摘要： An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.
摘要翻译：本发明的目的是减少用于脉冲溅射装置的惰性气体供给和排出装置的尺寸。另一个目的是在脉冲溅射装置中有效地将惰性气体供应到需要惰性气体的地方。因此，所提供的脉冲溅射装置具有执行脉冲放电并产生等离子体的溅射源，向溅射源注入并提供惰性气体的气体注入阀以及控制溅射源和气体注入阀的控制器。控制器控制溅射源和气体喷射阀，使得气体喷射阀间歇地喷射惰性气体，使得在溅射源中发生脉冲放电的一部分周期与一段时间重叠，气体喷射阀注入并供给惰性气体。

5. 发明授权

US10818483B2 Pulsed sputtering apparatus and pulsed sputtering method 有权
公开(公告)号：US10818483B2
公开(公告)日：2020-10-27
申请号：US16203259
申请日：2018-11-28
申请人： Ayabo Corporation
发明人： Keizo Tsukamoto
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34
摘要： An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.

6. 发明申请

US20190096642A1 Pulsed Sputtering Apparatus and Pulsed Sputtering Method 审中-公开
公开(公告)号：US20190096642A1
公开(公告)日：2019-03-28
申请号：US16203259
申请日：2018-11-28
申请人： Ayabo Corporation
发明人： Keizo Tsukamoto
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34
摘要： An object of the invention is to reduce sizes of an inert gas supply and exhaust devices used for a pulse sputtering device. Another object is to efficiently supply suitable quantity of the inert gas to a place where the inert gas is required in the pulse sputtering device. Therefore, a provided pulse sputtering device has a sputtering source that performs pulse discharge and generates plasma, a gas injection valve that injects and supplies an inert gas to the sputtering source and a controller that controls the sputtering source and the gas injection valve. The controller controls the sputtering source and the gas injection valve such that the gas injection valve injects the inert gas intermittently and such that a part of a period, in which the pulse discharge occurs in the sputtering source, overlaps with a part of a period, in which the gas injection valve injects and supplies the inert gas.

7. 发明申请

US20170309459A1 Method and Device for Particle Measurement 审中-公开
公开(公告)号：US20170309459A1
公开(公告)日：2017-10-26
申请号：US15313063
申请日：2015-08-07
申请人： Ayabo Corporation , Tohoku University
发明人： Keizo Tsukamoto , Masahide Tona , Fuminori Misaizu , Kiichirou Koyasu
IPC分类号： H01J37/32 , H01J49/40 , H01J37/34
CPC分类号： H01J37/32935 , C23C14/3485 , C23C14/351 , C23C14/52 , G01N27/62 , H01J37/32422 , H01J37/32972 , H01J37/32981 , H01J37/3299 , H01J37/3405 , H01J37/3467 , H01J37/3476 , H01J49/40
摘要： Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device has a measuring section that measures a ratio between an equivalent value of the number of ion particles discharged from a target by sputtering caused by a pulsed electric discharge and an equivalent value of the number of neutral particles discharged from the target by the pulsed electric discharge. The ratio between the number of the ion particles and the number of the neutral particles discharged from the target by the sputtering can be regarded as one of factors affecting quality of a vapor-deposited film, a film growth rate and an etching rate. Thus, a factor affecting the quality of the vapor-deposited film, the film growth rate and the etching rate can be grasped and also controlled.

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