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    • 3. 发明申请
    • WAFER HOLDER ASSEMBLY
    • 晶片夹持器组件
    • WO0113410A9
    • 2001-08-16
    • PCT/US0022677
    • 2000-08-17
    • IBIS TECHNOLOGY INCBLAKE JULIAN GSMICK THEODORE HANDREWS ROBERT SCORDTS BERNHARD F IIIRYDING GEOFFREY
    • BLAKE JULIAN GSMICK THEODORE HANDREWS ROBERT SCORDTS BERNHARD F IIIRYDING GEOFFREY
    • H01J37/317H01L21/265H01L21/683H01L21/687H01L21/00
    • H01L21/687
    • A wafer holder assembly for use in an ion implantation system includes at least one base structural member attachable to an end-station within the implantation system. At least a wafer-holding member, formed of an electrically conductive refractive material, is coupled to the base member and is adapted to hold a wafer in the path of an ion beam within the ion implantation system. The wafer holder assembly can include first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges form the wafer during the ion implantation process. The wafer-contacting pins at the distal end of the arms can be formed form silicon or graphite. The pins can be coated, for example, with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface. The pins can have a limited profile to minimize the amount of pin material proximate the wafer for reducing the likelihood of electrical arcing from the wafer to the pin.
    • 用于离子注入系统的晶片保持器组件包括至少一个可连接到植入系统内的终端站的基座结构构件。 由导电折射材料形成的至少一个晶片保持构件联接到基座构件并且适于将晶片保持在离子注入系统内的离子束的路径中。 晶片保持器组件可以包括第一和第二主要结构部件,第一和第二晶片保持臂从该主要结构部件延伸。 第一臂通过石墨保持构件固定到主要结构构件。 第二臂通过石墨偏置构件枢转地偏置到晶片保持位置。 该布置提供从晶片到组件的导电路径,用于在离子注入过程期间抑制从晶片的放电。 臂的远端处的晶片接触销可以由硅或石墨形成。 例如,可以用氮化钛涂覆引脚以增强与晶片的电接触并提供耐磨表面。 这些引脚可以具有有限的轮廓以最小化邻近晶片的引脚材料的量,以降低从晶片到引脚的电弧的可能性。
    • 5. 发明申请
    • SHAPED APERTURES IN AN ION IMPLANTER
    • 在离子植入物中形成的形状
    • WO2008053139A3
    • 2008-10-02
    • PCT/GB2007003672
    • 2007-09-26
    • APPLIED MATERIALS INCRYDING GEOFFREYSAKASE TAKAOFARLEY MARVINHAYS STEPHEN
    • RYDING GEOFFREYSAKASE TAKAOFARLEY MARVINHAYS STEPHEN
    • H01J37/09H01J37/317
    • H01J37/3171H01J37/09H01J2237/0451
    • This invention relates to shaped apertures (54a-h) in an ion implanter that may act to clip an ion beam (34,34) and so adversely affect uniformity of an implant. In particular, the present invention finds application in ion implanters that employ scanning of a substrate to be implanted relative to the ion beam such that the ion beam traces a raster pattern over the substrate. An ion implanter is provided comprising: a substrate scanner arranged to scan a substrate repeatedly through an ion beam in a scanning direction substantially transverse to the ion beam path, thereby forming a series of scan lines across the substrate; and an aperture pl-ate (52a-h)] having provided therein an aperture positioned on the ion beam path upstream of the substrate scanner, and wherein the aperture is defined in part by an inwardly- facing projection (57a, 57b, 59a, 59b).
    • 本发明涉及离子注入机中的成形孔(54a-h),其可以用于夹住离子束(34,34),并且因此不利地影响植入物的均匀性。 特别地,本发明应用于使用相对于离子束进行植入的衬底的扫描的离子注入器,使得离子束在衬底上追踪光栅图案。 提供了一种离子注入机,包括:衬底扫描器,其布置成在基本上横向于离子束路径的扫描方向上反复扫描基板通过离子束,从而在衬底上形成一系列扫描线; 和一个开口(52a-h)],其中设置有位于基板扫描器上游的离子束路径上的孔,并且其中孔径部分地由向内的突起(57a,57b,59a, 59B)。