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1. 发明申请

WO2017060216A1 PROCESS FOR INDIUM OR INDIUM ALLOY DEPOSITION AND ARTICLE 审中-公开
标题翻译：印度或印度合金沉积和制品的工艺
公开(公告)号：WO2017060216A1
公开(公告)日：2017-04-13
申请号：PCT/EP2016/073631
申请日：2016-10-04
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： VAZHENIN, Grigory , SPERLING, Jan , PIEPER, Stefan , CASTELLANI, Mauro , KIRBS, Andreas , ROHDE, Dirk
IPC分类号： C25D5/10 , C25D5/12 , C25D5/48 , C25D7/00 , C25F5/00 , C23C28/02 , C25D5/40 , C23C18/16
CPC分类号： C25D5/10 , C23C18/1653 , C23C28/021 , C25D5/12 , C25D5/40 , C25D5/48 , C25D7/00 , C25F5/00
摘要： The present invention deals with a process for deposition of indium or indium alloys and an article obtained by the process, wherein the process comprises the steps • i. providing a substrate having at least one metal or metal alloy surface; • ii. depositing a first indium or indium alloy layer on at least one portion of said surface whereby a composed phase layer is formed of a part of the metal or metal alloy surface and a part of the first indium or indium alloy layer; • iii. removing partially or wholly the part of the first indium or indium alloy layer which has not been formed into the composed phase layer; • iv. depositing a second indium or indium alloy layer on the at least one portion of the surface obtained in step iii. • v.
摘要翻译：本发明涉及沉积铟或铟合金的方法和通过该方法获得的制品，其中该方法包括以下步骤：i。提供具有至少一种金属或金属合金表面的基底; •ii。在所述表面的至少一部分上沉积第一铟或铟合金层，由此组成的相层由金属或金属合金表面的一部分和第一铟或铟合金层的一部分形成; •iii。部分或全部去除未形成组合相层的第一铟或铟合金层的一部分; •iv。在步骤iii中获得的表面的至少一部分上沉积第二铟或铟合金层。 •v。

2. 发明申请

WO2014079737A2 COPPER PLATING BATH COMPOSITION 审中-公开
标题翻译：铜镀层组合物
公开(公告)号：WO2014079737A2
公开(公告)日：2014-05-30
申请号：PCT/EP2013/073629
申请日：2013-11-12
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： BRUNNER, Heiko , ROELFS, Bernd , WITCZAK, Agnieszka , KOHLMANN, Lars , MANN, Olivier , OHDE, Christian , BANGERTER, Timo , FERRO, Angelo , KIRBS, Andreas , SCHMÖKEL, Andre , ROHDE, Dirk , ACKERMANN, Stefanie
IPC分类号： C25D3/38 , C25D3/58
CPC分类号： C25D3/38 , C25D3/58 , C25D5/02 , H01L21/2885 , H01L21/76898
摘要： The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
摘要翻译：本发明涉及用于电子应用的印刷电路板，IC基板，半导体和玻璃装置的制造中铜和铜合金沉积的酸性电镀液。根据本发明的电镀浴包含铜离子，至少一种酸和乙烯聚合物，其在两个末端包含氨基残基且不含有机结合的卤素。电镀槽特别适用于填充具有铜的凹陷结构和柱状凸起结构的积聚。

3. 发明申请

WO2009132861A2 AQUEOUS, ACID BATH AND METHOD FOR THE ELECTROLYTIC DEPOSITION OF COPPER 审中-公开
标题翻译：铜的电解沉积的水性，酸浴和方法
公开(公告)号：WO2009132861A2
公开(公告)日：2009-11-05
申请号：PCT/EP2009/003353
申请日：2009-04-27
申请人： ATOTECH DEUTSCHLAND GMBH , BRUNNER, Heiko , ROELFS, Bernd , ROHDE, Dirk , PLIET, Thomas
发明人： BRUNNER, Heiko , ROELFS, Bernd , ROHDE, Dirk , PLIET, Thomas
IPC分类号： C25D3/38 , H05K3/24 , H05K3/42 , C25D5/18
CPC分类号： C25D3/38 , C25D5/18 , H05K3/421 , H05K3/423
摘要： To generate a very uniform copper deposit in particular in blind micro vias (BMVs) and trenches, an aqueous, acid bath for the electrolytic deposition of copper is provided, said bath containing at least one copper ion source, at least one acid ion source, at least one brightener compound and at least one leveler compound, wherein at least one leveler compound is selected from the group comprising synthetically produced non-functionalized peptides and synthetically produced functionalized peptides and synthetically produced functionalized amino acids.
摘要翻译：为了产生特别是在盲微孔（BMV）和沟槽中的非常均匀的铜沉积物，提供了用于电解沉积铜的水性酸浴，所述浴含有至少一种铜离子源，至少一种酸性离子源，至少一种增白剂化合物和至少一种矫味剂化合物，其中至少一种矫味剂化合物选自合成产生的非官能化肽和合成产生的官能化肽和合成产生的功能化氨基酸。

4. 发明申请

WO2019053120A1 A BATH AND METHOD FOR FILLING A VERTICAL INTERCONNECT ACCESS OR TRENCH OF A WORK PIECE WITH NICKEL OR A NICKEL ALLOY 审中-公开
公开(公告)号：WO2019053120A1
公开(公告)日：2019-03-21
申请号：PCT/EP2018/074730
申请日：2018-09-13
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： GAIDA, Josef , SPERLING, Jan , CASTELLANI, Mauro , VAZHENIN, Grigory , ACKERMANN, Stefanie , BRUNNER, Heiko , ROHDE, Dirk
IPC分类号： C25D3/12 , C07C2/50 , C25D3/56 , C25D7/12 , C25D7/00 , H05K3/42
摘要： An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprising - a source of nickel ions, and optionally a source of ions of at least one alloying metal, - at least one buffering agent, - at least one of a dimer of a compound of formula (I) or mixtures thereof formula (I), wherein R 1 is a substituted or unsubstituted alkenyl group, R 2 may be present or not, and if present R 2 is a –(CH 2 ) n -SO 3 - group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.

5. 发明申请

WO2016169952A1 ELECTROLYTIC COPPER PLATING BATH COMPOSITIONS AND A METHOD FOR THEIR USE 审中-公开
标题翻译：电镀铜镀层组合物及其使用方法
公开(公告)号：WO2016169952A1
公开(公告)日：2016-10-27
申请号：PCT/EP2016/058704
申请日：2016-04-20
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： BRUNNER, Heiko , ROHDE, Dirk , PÖLLETH, Manuel , RÜCKBROD, Sven , DARWIN, Desthree , NIEMANN, Sandra , STEINBERGER, Gerhard
IPC分类号： C25D3/38 , C25D7/00
CPC分类号： C25D3/38 , C25D7/00 , C25D21/00
摘要： The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and at least one guanidine compound. The plating bath is particularly useful for plating recessed structures with copper and build-up of copper pillar bump structures.
摘要翻译：本发明涉及用于电子应用的印刷电路板，IC基板，半导体和玻璃装置的制造中铜和铜合金沉积的酸性电镀液。根据本发明的电镀浴包含至少一种铜离子源，至少一种酸和至少一种胍化合物。电镀浴特别适用于镀铜的凹陷结构和铜柱凸块结构的堆积。

6. 发明申请

WO2012175249A1 METHOD FOR COPPER PLATING 审中-公开
标题翻译：铜镀层方法
公开(公告)号：WO2012175249A1
公开(公告)日：2012-12-27
申请号：PCT/EP2012/058377
申请日：2012-05-07
申请人： ATOTECH DEUTSCHLAND GMBH , ROHDE, Dirk , ROELFS, Bernd , HIGUCHI, Jun
发明人： ROHDE, Dirk , ROELFS, Bernd , HIGUCHI, Jun
IPC分类号： C25D3/38
CPC分类号： C25D3/38 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76898 , H05K3/187 , H05K3/423 , H05K2203/0733
摘要： A method for copper plating in a plating bath wherein the substrate is brought into contact with a leveller additive comprising a heterocyclic core having a thiol group and an amino group attached to said heterocyclic core by a spacer is disclosed. Said method is particularly suitable for filling recessed structures in the manufacture of printed circuit boards, IC substrates and semiconducting substrates.
摘要翻译：公开了一种在电镀浴中镀铜的方法，其中使衬底与包含具有硫醇基的杂环核心和通过间隔基连接到所述杂环核心上的氨基的矫味添加剂接触。所述方法特别适用于在印刷电路板，IC基板和半导体基板的制造中填充凹陷结构。

7. 发明申请

WO2012171726A3 COPPER FILLED OPENING WITH A CAP LAYER 审中-公开
公开(公告)号：WO2012171726A3
公开(公告)日：2012-12-20
申请号：PCT/EP2012/058564
申请日：2012-05-09
申请人： ATOTECH DEUTSCHLAND GMBH , ROHDE, Dirk , DAMBROWSKY, Nina , GAIDA, Josef , UHLIG, Albrecht , VAN DEN BOOM, Ruud
发明人： ROHDE, Dirk , DAMBROWSKY, Nina , GAIDA, Josef , UHLIG, Albrecht , VAN DEN BOOM, Ruud
IPC分类号： C23C18/16 , C23C18/31 , C23C18/32 , H01L23/532 , H01L21/768 , C23C18/18
摘要： The invention concerns openings in substrates filled with a copper deposit. Thermal annealing processes lead to an irreversible expansion of said copper deposit and hence to the formation of voids in the copper deposit and cracks between the surface of the substrate and active or passive overlying structures. The present invention provides cap layers which suppress the irreversible expansion of copper during or after thermal annealing.

8. 发明申请

WO2019013761A1 AQUEOUS COMPOSITION FOR DEPOSITING A COBALT DEPOSIT AND METHOD FOR ELECTROLYTICALLY DEPOSITING SUCH A DEPOSIT 审中-公开
公开(公告)号：WO2019013761A1
公开(公告)日：2019-01-17
申请号：PCT/US2017/041475
申请日：2017-07-11
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： WAFULA, Fred , ADOLF, James , WU, Jun , GAIDA, Josef , ROHDE, Dirk , VAZHENIN, Grigory
IPC分类号： C25D7/12 , C25D3/16
CPC分类号： C25D3/16 , C25D7/123
摘要： The present invention refers to an aqueous composition for depositing a cobalt deposit, the composition comprising (a) cobalt (II) ions, (b) at least one first compound comprising an acetylenic moiety, (c) at least one polymer comprising a plurality of carboxamide moieties each with a secondary or tertiary amine nitrogen, and (d) optionally a buffering agent, and a method for electrolytically depositing a cobalt deposit onto a substrate utilizing the composition above.

9. 发明申请

WO2017129583A1 AQUEOUS INDIUM OR INDIUM ALLOY PLATING BATH AND PROCESS FOR DEPOSITION OF INDIUM OR AN INDIUM ALLOY 审中-公开
标题翻译：水合铟或铟合金电镀浴和沉积铟或铟合金的方法
公开(公告)号：WO2017129583A1
公开(公告)日：2017-08-03
申请号：PCT/EP2017/051484
申请日：2017-01-25
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： SPERLING, Jan , PIEPER, Stefan , VAZHENIN, Grigory , CASTELLANI, Mauro , KIRBS, Andreas , ROHDE, Dirk
IPC分类号： C25D3/54 , C25D3/56 , C25D5/10 , C25D5/18 , C25D5/48 , C25D5/40
CPC分类号： C25D5/10 , C25D3/54 , C25D3/56 , C25D5/18 , C25D5/40 , C25D5/48
摘要： An aqueous indium or indium alloy plating bath comprising - a source of indium ions, - an acid, - a source of halide ions, - a surfactant according to formula (I) wherein A is selected from branched or unbranched C 10 -C 15 -alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and - a dihydroxybenzene derivative according to formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, and a process for deposition of indium or an indium alloy wherein said bath is used.
摘要翻译：铟或铟合金电镀液，其包含 - 铟离子源， - 酸， - 卤化物离子源， - 根据式（I）的表面活性剂，其中A选自支化或未分支的C 10 -C 15 - 烷基; B选自氢和烷基; m是5至25的整数; 每个R彼此独立地选自氢和甲基; 和 - 根据式（II）的二羟基苯衍生物，其中每个X独立地选自氟，氯，溴，碘，烷氧基和硝基; n是1至4的整数，以及用于沉积铟或铟合金的方法，其中使用所述浴。

10. 发明申请

WO2017042334A1 COPPER PLATING BATH COMPOSITION AND METHOD FOR DEPOSITION OF COPPER 审中-公开
标题翻译：铜镀层组合物和沉积铜的方法
公开(公告)号：WO2017042334A1
公开(公告)日：2017-03-16
申请号：PCT/EP2016/071309
申请日：2016-09-09
申请人： ATOTECH DEUTSCHLAND GMBH
发明人： ROHDE, Dirk , PALM, Jens
IPC分类号： C25D3/38 , C25D7/00 , H05K3/18
CPC分类号： C25D3/38 , C25D7/00
摘要： The present invention relates to aqueous acidic plating baths for copper deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions, at least one acid and an additive obtainable by a reaction of at least one aminoglycidyl compound comprising at least one amino group which bears at least one glycidyl moiety and at least one second compound selected from ammonia and amine compounds wherein the amine compounds comprise at least one primary or secondary amino group with the proviso that the aminoglycidyl compound contains at least one polyoxyalkylene residue and/or the amine compound contains at least one polyoxyalkylene residue. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.
摘要翻译：本发明涉及用于电子应用的印刷电路板，IC衬底，半导体和玻璃器件的制造中用于铜沉积的酸性电镀浴。根据本发明的电镀浴包含至少一种铜离子源，至少一种酸和可通过至少一种包含至少一个至少一个缩水甘油基部分的氨基的氨基糖基化合物与至少一个缩水甘油基部分反应的添加剂一种选自氨和胺化合物的化合物，其中胺化合物包含至少一个伯氨基或仲氨基，条件是氨基缩水甘油基化合物含有至少一个聚氧化烯残基和/或胺化合物含有至少一个聚氧化烯残基。电镀槽特别适用于填充具有铜的凹陷结构和柱状凸起结构的积聚。

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