专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090121159A1 CLUSTER E-BEAM LITHOGRAPHY SYSTEM 审中-公开
标题翻译：集群电子束光刻系统
公开(公告)号：US20090121159A1
公开(公告)日：2009-05-14
申请号：US12259280
申请日：2008-10-27
申请人： ARCHI HWANG , YI XIANG WANG , JACK JAU , CHUNG-SHIH PAN , ZHONGWEI CHEN
发明人： ARCHI HWANG , YI XIANG WANG , JACK JAU , CHUNG-SHIH PAN , ZHONGWEI CHEN
IPC分类号： A61N5/00
CPC分类号： G03F7/7045
摘要： A hybrid lithography system is disclosed to achieve high throughput and high resolution of sub 32 nm lithography. The hybrid system contains an optical lithographer for expose pattern area where features above 32 nm, and a cluster e-beam lithography system for expose pattern area where features is sub 32 nm.
摘要翻译：公开了一种混合光刻系统，以实现32nm光刻的高通量和高分辨率。混合系统包含用于32nm以上特征的曝光图案区域的光学平版印刷机，以及用于曝光图案区域的簇电子束光刻系统，其特征在32nm以下。

2. 发明申请

US20110260055A1 Dynamic Focus Adjustment with Optical Height Detection Apparatus in Electron Beam system 有权
标题翻译：电子束系统中光学高度检测装置的动态聚焦调整
公开(公告)号：US20110260055A1
公开(公告)日：2011-10-27
申请号：US12764902
申请日：2010-04-21
申请人： JOE WANG , VAN-DUC NGUYEN , YI-XIANG WANG , JACK JAU , ZHONGWEI CHEN
发明人： JOE WANG , VAN-DUC NGUYEN , YI-XIANG WANG , JACK JAU , ZHONGWEI CHEN
IPC分类号： H01J37/21 , G01N23/22 , G01B11/24 , H01J37/28
CPC分类号： G01B11/22 , G01N23/04 , G01N23/20058 , G01N2223/32 , G01N2223/3301 , G01N2223/3302 , G01N2223/646 , H01J37/21 , H01J37/28 , H01J2237/216 , H01J2237/2482 , H01J2237/2487
摘要： The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.
摘要翻译：本发明一般涉及图像系统的动态聚焦调整。本发明借助于高度检测子系统，提供了一种用于通过改变物镜和样品台之间的静电透镜的场强/或偏置电压来根据样本表面高度变化来微调整图像聚焦的装置和方法应用于样品表面。仅作为示例，本发明已经应用于扫描电子检查系统。但是应当认识到，本发明可以应用于使用带有带电粒子束的其它系统作为具有高度检测装置的观察工具。

3. 发明申请

US20100140498A1 OPERATION STAGE FOR WAFER EDGE INSPECTION AND REVIEW 失效
标题翻译：水边检查和审查的操作阶段
公开(公告)号：US20100140498A1
公开(公告)日：2010-06-10
申请号：US12331336
申请日：2008-12-09
申请人： JACK JAU , HONG XIAO , JOE WANG , ZHONGWEI CHEN , YI XIANG WANG , EDWARD TSENG
发明人： JACK JAU , HONG XIAO , JOE WANG , ZHONGWEI CHEN , YI XIANG WANG , EDWARD TSENG
IPC分类号： G21K5/10
CPC分类号： H01J37/28 , H01J37/20 , H01J2237/202 , H01J2237/2817 , H01L21/67288 , H01L21/6831
摘要： The present invention relates to an operation stage of a charged particle beam apparatus which is employed in a scanning electron microscope for substrate (wafer) edge and backside defect inspection or defect review. However, it would be recognized that the invention has a much broader range of applicability. A system and method in accordance with the present invention provides an operation stage for substrate edge inspection or review. The inspection region includes top near edge, to bevel, apex, and bottom bevel. The operation stage includes a supporting stand, a z-stage, an X-Y stage, an electrostatic chuck, a pendulum stage and a rotation track. The pendulum stage mount with the electrostatic chuck has the ability to swing from 0° to 180° while performing substrate top bevel, apex and bottom bevel inspection or review. In order to keep the substrate in focus and avoid a large position shift during altering the substrate observation angle by rotation the pendulum stage, one embodiment of the present invention discloses a method such that the rotation axis of the pendulum stage consist of the tangent of upper edge of the substrate to be inspected. The electrostatic chuck of the present invention has a diameter smaller than which of the substrate to be inspected. During the inspection process the substrate on the electrostatic chuck may be rotated about the central axis on the electrostatic chuck to a desired position, this design insures all position on the bevel and apex are able to be inspected.
摘要翻译：本发明涉及用于基板（晶片）边缘和背面缺陷检查或缺陷检查的扫描电子显微镜中的带电粒子束装置的操作阶段。然而，应当认识到，本发明具有更广泛的应用范围。根据本发明的系统和方法提供了用于衬底边缘检查或审查的操作阶段。检查区域包括顶部近边缘，斜面，顶点和底部斜面。操作台包括支撑台，z台，X-Y台，静电卡盘，摆台和旋转轨道。具有静电卡盘的摆台安装具有从0°摆动到180°的能力，同时执行基板顶部斜面，顶部和底部斜面检查或检查。为了将基板保持在对焦状态，并且通过旋转摆锤台来改变基板观察角度而避免大的位置偏移，本发明的一个实施例公开了一种方法，使得摆台的旋转轴线由上部的切线要检查的基板的边缘。本发明的静电卡盘的直径小于要检查的基板的直径。在检查过程中，静电卡盘上的基板可以围绕静电卡盘上的中心轴线旋转到期望的位置，该设计确保能够检查斜面上的所有位置和顶点。

4. 发明申请

US20110036981A1 CHARGED PARTICLE BEAM INSPECTION METHOD 有权
标题翻译：充电颗粒光束检测方法
公开(公告)号：US20110036981A1
公开(公告)日：2011-02-17
申请号：US12540357
申请日：2009-08-12
申请人： YAN ZHAO , JACK JAU
发明人： YAN ZHAO , JACK JAU
IPC分类号： G01N23/00
CPC分类号： G01N23/2206 , G01N23/2251 , G01N2223/611
摘要： An imaging method and apparatus for forming images of substantially the same area on a sample for defect inspection within the area are disclosed. The disclosed method includes line-scanning the charged particle beam over the area to form a plurality of n*Y scan lines by repeatedly forming a group of n scan lines for Y times. During the formation of each group of n scan lines, an optical beam is, from one line scan to another, selectively illuminated on the area prior to or simultaneously with scanning of the charged particle beam. In addition, during the formation of each group of n scan lines, a condition of illumination of the optical beam selectively changes from one line scan to another. The conditions at which individual n scan lines are formed are repeated for the formation of all Y groups.
摘要翻译：公开了一种用于在该区域内形成用于缺陷检查的样品上基本相同区域的图像的成像方法和装置。所公开的方法包括通过重复地形成一组n条扫描线Y次，对该区域上的带电粒子束进行线扫描以形成多个n×Y扫描线。在每组n条扫描线的形成过程中，在扫描带电粒子束之前或同时，光束从一行扫描到另一条扫描线被选择性地照射在该区域上。此外，在每组n条扫描线的形成期间，光束的照明条件选择性地从一条扫描线变化到另一条扫描线。重复形成单个n条扫描线的条件以形成所有Y组。

5. 发明申请

US20120212601A1 METHOD AND SYSTEM FOR MEASURING CRITICAL DIMENSION AND MONITORING FABRICATION UNIFORMITY 有权
标题翻译：用于测量关键尺寸和监测制造均匀性的方法和系统
公开(公告)号：US20120212601A1
公开(公告)日：2012-08-23
申请号：US13032105
申请日：2011-02-22
申请人： WEI FANG , HONG XIAO , JACK JAU
发明人： WEI FANG , HONG XIAO , JACK JAU
IPC分类号： H04N7/18 , G06K9/00
CPC分类号： H04N7/18 , G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/20016 , G06T2207/30148 , H04N7/183
摘要： A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.
摘要翻译：用于测量临界尺寸（CD）的方法包括以下步骤：扫描模具的至少一个感兴趣区域以获得至少一个扫描图像; 将扫描图像对准至少一个设计的布局图案，以识别扫描图像内的多个边界; 以及从与设计的布局图案对应的特定类型的CD相关联的图案的边界或多个边界测量的平均距离，以获得模具的CD的值。可以通过相对较高的扫描速度获得的具有较低分辨率的扫描图像获得模具的临界尺寸的值，因此上述方法可以获得整个晶片内的每个管芯的CD值，以监测半导体的均匀性制造过程在可接受的检验时间内。

6. 发明申请

US20120070067A1 Method for Inspecting Overlay Shift Defect during Semiconductor Manufacturing and Apparatus Thereof 有权
标题翻译：半导体制造过程中检查覆盖偏移缺陷的方法及其设备
公开(公告)号：US20120070067A1
公开(公告)日：2012-03-22
申请号：US13240721
申请日：2011-09-22
申请人： WEI FANG , HONG XIAO , JACK JAU
发明人： WEI FANG , HONG XIAO , JACK JAU
IPC分类号： G06K9/00 , G01N23/00
CPC分类号： G03F7/70633
摘要： A method for inspecting overlay shift defect during semiconductor manufacturing is disclosed herein and includes a step for providing a charged particle microscopic image of a sample, a step for identifying an inspection pattern measure in the charged particle microscopic image, a step for averaging the charged particle microscopic image by using the inspection pattern measure to form an averaged inspection pattern measure, a step for estimating an average width from the averaged inspection pattern measure, and a step for comparing the average width with a predefined threshold value to determine the presence of the overlay shift defect.
摘要翻译：本文公开了一种用于在半导体制造期间检查覆盖偏移缺陷的方法，并且包括用于提供样品的带电粒子显微镜图像的步骤，用于识别带电粒子显微镜图像中的检查图案测量的步骤，用于使带电粒子平均的步骤通过使用检查图案测量形成平均检查图案测量的微观图像，从平均检查图案度量估计平均宽度的步骤，以及将平均宽度与预定阈值进行比较以确定覆盖层的存在的步骤移位缺陷。

7. 发明申请

US20100246929A1 METHOD AND SYSTEM FOR DETERMINING A DEFECT DURING CHARGED PARTICLE BEAM INSPECTION OF A SAMPLE 有权
标题翻译：用于确定充电颗粒束检测样品中缺陷的方法和系统
公开(公告)号：US20100246929A1
公开(公告)日：2010-09-30
申请号：US12414130
申请日：2009-03-30
申请人： ZHAO-LI ZHANG , WEI FANG , JACK JAU
发明人： ZHAO-LI ZHANG , WEI FANG , JACK JAU
IPC分类号： G06K9/00 , G01N23/00
CPC分类号： G06T7/001 , G06T2207/30148
摘要： A method for determining a defect during charged particle beam inspection of a sample locates at least one examination region within a charged particle microscopic image of the sample by making reference to a database graphic of the sample corresponding to the charged particle microscopic image. Each located examination region concerns at least one element of the sample, and each element has at least one characteristic in common. At least one point response value is then generated for each point in the located examination regions. The presence of a defect at the location of the concerned point is then determined by applying at least one decision tree operator to the generated point response values of the concerned point. Applications of the proposed method as a computing agent and a charged particle beam inspection system are also disclosed.
摘要翻译：用于在样品的带电粒子束检查期间确定缺陷的方法通过参考对应于带电粒子显微镜图像的样品的数据库图形来定位样品的带电粒子微观图像内的至少一个检查区域。每个位置的检查区域涉及样品的至少一个元件，并且每个元件具有至少一个共同的特征。然后为定位的检查区域中的每个点生成至少一个点响应值。然后通过将至少一个决策树运算符应用于相关点的生成点响应值来确定在相关点的位置处的缺陷的存在。还公开了所提出的方法作为计算代理和带电粒子束检查系统的应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式