专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012145205A3 HOT WIRE ATOMIC LAYER DEPOSITION APPARATUS AND METHODS OF USE 审中-公开
标题翻译：热线原子层沉积装置及其使用方法
公开(公告)号：WO2012145205A3
公开(公告)日：2013-01-24
申请号：PCT/US2012033029
申请日：2012-04-11
申请人： APPLIED MATERIALS INC , YUDOVSKY JOSEPH , KWONG GARRY K , HAAS DIETER , MARCUS STEVEN D , WEIDMAN TIMOTHY W
发明人： YUDOVSKY JOSEPH , KWONG GARRY K , HAAS DIETER , MARCUS STEVEN D , WEIDMAN TIMOTHY W
IPC分类号： H01L21/205
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/45544
摘要： Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described.
摘要翻译：提供了用于原子层沉积设备的气体分配板，其包括热线或热丝单元，其可以在加工基板的同时被加热以激发气态物质。还描述了使用热丝处理衬底以激发气态前体物质的方法。

2. 发明申请

WO2013039866A4 ACTIVATED SILICON PRECURSORS FOR LOW TEMPERATURE DEPOSITION 审中-公开
标题翻译：活性硅前驱体用于低温沉积
公开(公告)号：WO2013039866A4
公开(公告)日：2013-06-27
申请号：PCT/US2012054581
申请日：2012-09-11
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , SCHROEDER TODD , THOMPSON DAVID , ANTHIS JEFFREY W
发明人： WEIDMAN TIMOTHY W , SCHROEDER TODD , THOMPSON DAVID , ANTHIS JEFFREY W
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/50 , C23C16/36 , C23C16/505
摘要： Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了使用活化的含SiH的前体来低温沉积含硅膜的方法。含SiH的前体可以具有反应性官能团，例如卤素或氰基部分。描述了使用卤化或氰化硅烷沉积SiN膜的方法。可以使用等离子体处理条件来调节膜的碳，氢和/或氮含量。

3. 发明申请

WO2012048108A3 RADIATION PATTERNABLE CVD FILM 审中-公开
标题翻译：辐射可蚀刻CVD膜
公开(公告)号：WO2012048108A3
公开(公告)日：2012-07-05
申请号：PCT/US2011055102
申请日：2011-10-06
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL , INGLE NITIN K , MALLICK ABHIJIT BASU , CHATTERJEE AMIT
发明人： WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL , INGLE NITIN K , MALLICK ABHIJIT BASU , CHATTERJEE AMIT
IPC分类号： H01L21/027 , H01L21/205
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e.g., silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross- linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.
摘要翻译：提供了用于形成对衬底上的辐射敏感的光致抗蚀剂的方法。描述了使用等离子体作为光致抗蚀剂形成膜（例如，含硅膜）的化学气相沉积方法，所述等离子体可以暴露于辐射以形成图案。沉积方法利用具有可交联部分的前体，其将在暴露于辐射时交联。辐射可以在有或没有氧存在下进行。然后可以在含水碱显影剂中显影曝光或未曝光区域。

4. 发明申请

WO2010009295A3 HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK 审中-公开
标题翻译：使用金属层掩模的混合异相太阳能电池制造
公开(公告)号：WO2010009295A3
公开(公告)日：2010-03-11
申请号：PCT/US2009050808
申请日：2009-07-16
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
发明人： WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，其用于限定器件的有源区和器件和/或接触结构将位于太阳能电池基板的表面上的区域。该方法通常包括以下步骤：在太阳能电池基板的背面形成一个或多个层，以防止在形成太阳能电池的前侧区域时衬底的背面发生侵蚀，并提供稳定的支撑表面。在一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的金属化的背面接触结构。在另一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

5. 发明申请

WO2007111679A2 METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE 审中-公开
标题翻译：在半导体界面选择性地沉积薄膜材料的方法
公开(公告)号：WO2007111679A2
公开(公告)日：2007-10-04
申请号：PCT/US2006060273
申请日：2006-10-26
申请人： APPLIED MATERIALS INC , STEWART MICHAEL P , WEIDMAN TIMOTHY W
发明人： STEWART MICHAEL P , WEIDMAN TIMOTHY W
IPC分类号： C11D7/32
CPC分类号： C11D7/08 , C11D7/3218 , C11D11/0047 , H01L21/02063 , H01L21/28518 , H01L21/76814
摘要： Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the substrate to a buffered oxide etch solution to form a silicon hydride layer during a pretreatment process, depositing a metal silicide layer on the substrate, and depositing a first metal layer (e.g., tungsten) on the metal silicide layer. The buffered oxide etch solution may contain hydrogen fluoride and an alkanolamine compound, such as ethanolamine, diethanolamine, or triethanolamine. The metal silicide layer may contain cobalt, nickel, or tungsten and may be deposited by an electroless deposition process. In one example, the substrate is exposed to an electroless deposition solution containing a solvent and a complexed metal compound.
摘要翻译：本发明的实施例提供了形成与形成在衬底上的器件的高质量接触水平连接的过程。在一个实施例中，提供了用于在衬底上沉积材料的方法，其包括：在预处理工艺期间将衬底暴露于缓冲氧化物蚀刻溶液以形成硅氢化物层;在衬底上沉积金属硅化物层;以及沉积第一金属硅化物层上的金属层（例如，钨）。缓冲氧化物蚀刻溶液可以包含氟化氢和链烷醇胺化合物，例如乙醇胺，二乙醇胺或三乙醇胺。金属硅化物层可以包含钴，镍或钨，并且可以通过无电沉积工艺来沉积。在一个实例中，将衬底暴露于含有溶剂和络合金属化合物的无电沉积溶液。

6. 发明申请

WO2005073429A3 METHOD AND APPARATUS FOR SELECTIVELY CHANGING THIN FILM COMPOSITION DURING ELECTROLESS DEPOSITION IN A SINGLE CHAMBER 审中-公开
标题翻译：在一个单室中电沉积期间选择性地改变薄膜组合物的方法和装置
公开(公告)号：WO2005073429A3
公开(公告)日：2006-06-01
申请号：PCT/US2005002284
申请日：2005-01-25
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , PANCHAM IAN , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , SHACHAM-DIAMAND YOSEF , MOGHADAM FARHAD
发明人： WEIDMAN TIMOTHY W , PANCHAM IAN , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , SHACHAM-DIAMAND YOSEF , MOGHADAM FARHAD
IPC分类号： C23C18/16 , C23C18/50 , H01L21/02 , H01L21/288 , H01L21/768
CPC分类号： C23C18/1683 , C23C18/1619 , C23C18/1651 , C23C18/50 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76874 , Y10T428/12
摘要： A method and apparatus for electrolessly depositing a multilayer film using a processing solution(s) to clean and then electrolessly deposit a metal film having discrete or varying composition onto a conductive surface using a single processing cell. The process includes an in-situ cleaning step to minimize the formation of oxides on the conductive surfaces, by minimizing or preventing the exposure of the conductive surfaces to oxygen between the cleaning and electroless deposition process steps. In one aspect, the chemical components used in the processing solution(s) are selected so that the interaction of various chemical components will not drastically change the desirable properties of each of the interacting fluids. The continuous electroless deposition process may be used to form a first layer containing at least two of the following elements cobalt, tungsten, phosphorus or boron; and a second layer contains at least two of the following elements cobalt, boron or phosphorus.
摘要翻译：一种使用处理溶液无电沉积多层膜的方法和装置，以使用单个处理池清洁然后将具有离散或变化组成的金属膜无电沉积到导电表面上。该方法包括通过最小化或防止在清洁和无电沉积工艺步骤之间将导电表面暴露于氧气来最小化导电表面上的氧化物形成的原位清洁步骤。在一个方面，选择在处理溶液中使用的化学组分，使得各种化学组分的相互作用不会急剧地改变每种相互作用流体的期望性质。连续无电沉积工艺可用于形成含有至少两种以下元素钴，钨，磷或硼的第一层; 并且第二层含有钴，硼或磷中的至少两种元素。

7. 发明申请

WO2012048094A3 ATOMIC LAYER DEPOSITION OF PHOTORESIST MATERIALS AND HARD MASK PRECURSORS 审中-公开
标题翻译：光致抗蚀剂材料和硬掩模前体的原子层沉积
公开(公告)号：WO2012048094A3
公开(公告)日：2012-07-26
申请号：PCT/US2011055074
申请日：2011-10-06
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL
发明人： WEIDMAN TIMOTHY W , MICHAELSON TIMOTHY , DEATON PAUL
IPC分类号： H01L21/027 , H01L21/205
CPC分类号： G03F7/094 , G03F7/0752 , G03F7/16 , H01L21/0217 , H01L21/02219 , H01L21/02274 , H01L21/311 , H01L21/31144
摘要： Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
摘要翻译：提供了用于形成对衬底上的辐射敏感的光致抗蚀剂的方法。描述了形成膜（例如，含硅膜）光致抗蚀剂的原子层沉积方法。该过程可以重复多次以沉积多个硅光致抗蚀剂层。还公开了在光致抗蚀剂中沉积光刻胶和形成图案的工艺，其利用含碳底层例如无定形碳层。

8. 发明申请

WO2012061593A2 APPARATUS AND METHODS FOR DEPOSITION OF SILICON CARBIDE AND SILICON CARBONITRIDE FILMS 审中-公开
标题翻译：沉积碳化硅和碳化硅膜的装置和方法
公开(公告)号：WO2012061593A2
公开(公告)日：2012-05-10
申请号：PCT/US2011059135
申请日：2011-11-03
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , SCHROEDER TODD
发明人： WEIDMAN TIMOTHY W , SCHROEDER TODD
IPC分类号： H01L21/205 , H01L21/318
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/36 , C23C16/4554 , C23C16/5096 , H01L21/02274 , H01L21/0228 , H01L21/02329 , H01L21/0234 , H01L21/02447 , H01L21/02529 , H01L21/0262
摘要： Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C, for example between about 23° C and about 200° C or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N-H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.
摘要翻译：提供了用于在衬底表面上沉积碳化硅膜的方法。该方法包括使用气相碳硅烷前体并且可以采用等离子体增强的原子层沉积工艺。该方法可以在低于600℃的温度下进行，例如在约23℃和约200℃之间或在约100℃下进行。然后可以使该碳化硅层致密化以除去氢含量。另外，碳化硅层可暴露于氮源以提供反应性N-H基团，然后可使用其他方法来继续膜沉积。可以使用等离子体处理条件来调整膜的碳，氢和/或氮含量。

9. 发明申请

WO2006081290A3 APPARATUS FOR ELECTROLESS DEPOSITION OF METALS ONTO SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于电沉积金属到半导体衬底的装置
公开(公告)号：WO2006081290A3
公开(公告)日：2009-04-16
申请号：PCT/US2006002619
申请日：2006-01-23
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , ELLWANGER RUSSELL , PANCHAM IAN A , CHEBOLI RAMAKRISHNA , WEIDMAN TIMOTHY W
发明人： LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , ELLWANGER RUSSELL , PANCHAM IAN A , CHEBOLI RAMAKRISHNA , WEIDMAN TIMOTHY W
IPC分类号： C23C18/16 , B05D3/10 , C23F1/00 , H01L21/00 , H01L21/306 , H01L21/687
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为进入处理外壳的内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基底。

10. 发明申请

WO2007121336A3 RELIABLE FUEL CELL ELECTRODE DESIGN 审中-公开
标题翻译：可靠的燃料电池电极设计
公开(公告)号：WO2007121336A3
公开(公告)日：2008-05-29
申请号：PCT/US2007066596
申请日：2007-04-13
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , ARMSTRONG KARL J , EAGLESHAM DAVID J , KRISHNA NETY , HOFMANN RALF , STEWART MICHAEL P
发明人： WEIDMAN TIMOTHY W , ARMSTRONG KARL J , EAGLESHAM DAVID J , KRISHNA NETY , HOFMANN RALF , STEWART MICHAEL P
IPC分类号： H01M4/00
CPC分类号： H01M4/8867 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/3455 , H01M4/8817 , H01M4/92 , H01M8/0206 , H01M8/021 , H01M8/023 , H01M8/0236 , H01M8/0245 , H01M8/086 , H01M8/1004 , Y02P70/56
摘要： The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.
摘要翻译：本发明一般涉及燃料电池部件的制造和形成具有改善的寿命，降低生产成本和改进工艺性能的各种燃料电池部件的方法。本发明通常包括通过沉积对基材具有良好粘附性的材料层或低层电阻（高导电性）并且在燃料电池操作期间具有良好的抗化学侵蚀性能来处理或调理基材表面。基板可以是例如燃料电池部件，导电板，隔板，双极板或端板等。在一个实施方案中，通过将其至少一部分暴露于包含四氧化钌的气体或液体来处理或调理基底表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式