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1. 发明申请

WO2011137069A3 TWIN CHAMBER PROCESSING SYSTEM 审中-公开
标题翻译：双室加工系统
公开(公告)号：WO2011137069A3
公开(公告)日：2012-03-01
申请号：PCT/US2011033777
申请日：2011-04-25
申请人： APPLIED MATERIALS INC , XU MING , NGUYEN ANDREW , LEE EVANS , LEE JARED AHMAD , CRUSE JAMES P , COBB CORIE LYNN , SALINAS MARTIN JEFF , SHEYNER ANCHEL , GOLD EZRA ROBERT , LANE JOHN W
发明人： XU MING , NGUYEN ANDREW , LEE EVANS , LEE JARED AHMAD , CRUSE JAMES P , COBB CORIE LYNN , SALINAS MARTIN JEFF , SHEYNER ANCHEL , GOLD EZRA ROBERT , LANE JOHN W
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/52 , C23C16/45561 , C23C16/46 , C23C16/509 , C23C16/54
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有独立处理量的第一处理室和第二处理室以及在第一处理室和第二处理室之间的多个共享资源。在一些实施例中，共享资源包括共享真空泵，共用气体面板或共用传热源中的至少一个。

2. 发明申请

WO2011136974A3 PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF 审中-公开
标题翻译：具有共享资源的过程池及其使用方法
公开(公告)号：WO2011136974A3
公开(公告)日：2012-03-01
申请号：PCT/US2011032992
申请日：2011-04-19
申请人： APPLIED MATERIALS INC , LEE JARED AHMAD , CRUSE JAMES P , NGUYEN ANDREW , COBB CORIE LYNN , XU MING , SALINAS MARTIN JEFF , SHEYNER ANCHEL
发明人： LEE JARED AHMAD , CRUSE JAMES P , NGUYEN ANDREW , COBB CORIE LYNN , XU MING , SALINAS MARTIN JEFF , SHEYNER ANCHEL
IPC分类号： H01L21/02 , H01L21/205
CPC分类号： H01L21/67109 , H01L21/6719
摘要： Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.
摘要翻译：提供了具有共享资源和使用方法的过程室。在一些实施例中，衬底处理系统可以包括第一处理室，其具有设置在第一处理室内的第一衬底支撑件，其中第一衬底支撑件具有第一加热器和用于控制第一衬底支撑件的温度的第一冷却板; 第二处理室，具有设置在所述第二处理室内的第二基板支撑件，其中所述第二基板支撑件具有第二加热器和第二冷却板，以控制所述第二基板支撑件的温度; 以及共用传热流体源，其具有出口以向第一冷却板和第二冷却板提供传热流体，以及从第一冷却板和第二冷却板接收传热流体的入口。

3. 发明申请

WO2011137010A3 APPARATUS FOR RADIAL DELIVERY OF GAS TO A CHAMBER AND METHODS OF USE THEREOF 审中-公开
标题翻译：用于将气体径向输送到室的装置及其使用方法
公开(公告)号：WO2011137010A3
公开(公告)日：2012-03-08
申请号：PCT/US2011033332
申请日：2011-04-20
申请人： APPLIED MATERIALS INC , LEE JARED AHMAD , SALINAS MARTIN JEFF , AGARWAL ANKUR , GOLD EZRA ROBERT , CRUSE JAMES P , PAL ANIRUDDHA , NGUYEN ANDREW
发明人： LEE JARED AHMAD , SALINAS MARTIN JEFF , AGARWAL ANKUR , GOLD EZRA ROBERT , CRUSE JAMES P , PAL ANIRUDDHA , NGUYEN ANDREW
IPC分类号： H01L21/3065
CPC分类号： H01L21/67017 , H01L21/67115 , H01L21/6719 , H01L21/67201 , H01L21/68785 , Y10T137/6416 , Y10T137/8593
摘要： Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.
摘要翻译：本文提供了将气体输送到室的装置及其使用方法。在一些实施例中，用于处理室的气体分配系统可以包括主体，其具有构造成将主体连接到处理室的内表面的第一表面，主体具有穿过主体设置的开口; 靠近所述开口的与所述主体的第一表面相对的第一端附近的凸缘，所述凸缘向内延伸到所述开口中并且构造成在其上支撑窗户; 以及多个气体分配通道，其设置在所述主体内并且将设置在所述主体内并且围绕所述开口的通道流体连接到设置在所述凸缘中的多个孔，其中所述多个孔围绕所述凸缘径向设置。

4. 发明申请

WO2012118886A3 VACUUM CHAMBERS WITH SHARED PUMP 审中-公开
标题翻译：带共享泵的真空室
公开(公告)号：WO2012118886A3
公开(公告)日：2012-11-22
申请号：PCT/US2012027099
申请日：2012-02-29
申请人： APPLIED MATERIALS INC , PAL ANIRUDDHA , SALINAS MARTIN JEFF , LEE JARED AHMAD , REUTER PAUL B , YOUSIF IMAD
发明人： PAL ANIRUDDHA , SALINAS MARTIN JEFF , LEE JARED AHMAD , REUTER PAUL B , YOUSIF IMAD
IPC分类号： H01L21/02
CPC分类号： C23C16/4412
摘要： Embodiments of the present disclosure generally relate to vacuum processing chambers having different pumping requirements and connected to a shared pumping system through a single foreline. In one embodiment, the vacuum processing chambers include a high conductance pumping conduit and a low conductance pumping conduit coupled to a single high conductance foreline. In another embodiment, a plurality of unbalanced chamber groups may be connected to a common pumping system by a final foreline.
摘要翻译：本公开的实施例总体上涉及具有不同抽吸需求并且通过单个前级管线连接到共享泵送系统的真空处理室。在一个实施例中，真空处理室包括耦合到单个高电导率前级管线的高电导泵送管道和低电导泵送管道。在另一个实施例中，多个不平衡腔室组可以通过最终前级管线连接到公共泵送系统。

5. 发明申请

WO2012118897A3 ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION 审中-公开
标题翻译：双重加载配置中的消费和条带处理室
公开(公告)号：WO2012118897A3
公开(公告)日：2012-11-15
申请号：PCT/US2012027135
申请日：2012-02-29
申请人： APPLIED MATERIALS INC , SALINAS MARTIN JEFF , REUTER PAUL B , PAL ANIRUDDHA , LEE JARED AHMAD , YOUSIF IMAD
发明人： SALINAS MARTIN JEFF , REUTER PAUL B , PAL ANIRUDDHA , LEE JARED AHMAD , YOUSIF IMAD
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/677 , H01L21/683
CPC分类号： H01L21/3065 , H01J37/32844 , H01L21/02071 , H01L21/32137 , H01L21/67069 , H01L21/67201 , Y02C20/30 , Y02P70/605
摘要： Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.
摘要翻译：本发明的实施例提供一种能够处理基板的双载荷锁定室。在一个实施例中，双负载锁定室包括限定第一室容积的室主体和彼此隔离的第二室容积。下室和第二室容积中的每一个通过配置成用于衬底转移的两个开口选择性地连接到两个处理环境。双负载锁定室还包括设置在第二室容积中的加热的衬底支撑组件。被加热的衬底支撑组件构造成在其上支撑和加热衬底。双负载锁定室还包括连接到第二室容积的远程等离子体源，用于将等离子体供应到第二室容积。

6. 发明申请

WO2012118606A3 THIN HEATED SUBSTRATE SUPPORT 审中-公开
标题翻译：加热底板支撑
公开(公告)号：WO2012118606A3
公开(公告)日：2012-10-26
申请号：PCT/US2012024524
申请日：2012-02-09
申请人： APPLIED MATERIALS INC , YOUSIF IMAD , SALINAS MARTIN JEFF , REUTER PAUL B , PAL ANIRUDDHA , LEE JARED AHMAD
发明人： YOUSIF IMAD , SALINAS MARTIN JEFF , REUTER PAUL B , PAL ANIRUDDHA , LEE JARED AHMAD
IPC分类号： H01L21/683 , C23C14/50 , C23C16/458
CPC分类号： H01L21/67103 , H01L21/263 , H01L21/324 , H01L21/67109 , H01L21/67248 , H01L21/6838 , H01L21/68792 , H05B3/00
摘要： Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.
摘要翻译：本发明的实施例提供一种在处理室中加热和支撑衬底的装置。本发明的一个实施例提供一种基板支撑组件。基板支撑组件包括加热板，其具有在前侧上的基板支撑表面和从加热板的后侧延伸的悬臂。加热板被配置为支撑和加热基板支撑表面上的基板。悬臂具有附接到加热板附近加热板的中心轴线的第一端和从中心轴径向向外延伸的第二端。

7. 发明申请

WO2006069256A2 INTEGRATED THERMAL UNIT 审中-公开
标题翻译：集成热单元
公开(公告)号：WO2006069256A2
公开(公告)日：2006-06-29
申请号：PCT/US2005046637
申请日：2005-12-21
申请人： APPLIED MATERIALS INC , QUACH DAVID H , SALINAS MARTIN JEFF , ISHIKAWA TETSUYA
发明人： QUACH DAVID H , SALINAS MARTIN JEFF , ISHIKAWA TETSUYA
IPC分类号： B05D5/00
CPC分类号： H01L21/67225 , H01L21/67109 , H01L21/67173 , H01L21/67184 , H01L21/6719 , H01L21/67748
摘要： An integrated thermal unit comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate transfer shuttle configured to transfer substrates from the bake plate to the cool plate, wherein the substrate transfer shuttle has a temperature controlled substrate holding surface that is capable of cooling a substrate heated by the bake plate.
摘要翻译：一种集成热单元，包括：烘烤板，被配置为加热支撑在所述烘烤板的表面上的基底; 冷却板，被配置为冷却支撑在所述冷却板的表面上的基板; 以及衬底传送梭，其构造成将衬底从烘烤板转移到冷却板，其中衬底传送梭具有能够冷却由烘烤板加热的衬底的温度控制的衬底保持表面。

8. 发明申请

WO2007127866A2 AN INTEGRATED THERMAL UNIT HAVING VERTICALLY ARRANGED BAKE AND CHILL PLATES 审中-公开
标题翻译：具有垂直安排的烘烤和冷冻板的集成热单元
公开(公告)号：WO2007127866A2
公开(公告)日：2007-11-08
申请号：PCT/US2007067544
申请日：2007-04-26
申请人： SOKUDO CO LTD , SALINAS MARTIN JEFF , NATARAJAN RAMANAN , VOLFOVSKI LEON
发明人： SALINAS MARTIN JEFF , NATARAJAN RAMANAN , VOLFOVSKI LEON
IPC分类号： G03B27/52 , H01L21/00
CPC分类号： H01L21/67098 , H01L21/67178 , H01L21/67207
摘要： An integrated thermal unit comprising a housing; a bake station positioned within the housing, the bake station comprising a bake plate configured to heat a substrate supported on a surface of the bake plate; a chill station positioned within the housing, the chill station comprising a chill plate configured to cool a substrate supported on a surface of the chill plate; and a substrate receiving station positioned within the housing, the substrate receiving station configured to hold a substrate; wherein the bake station, chill station and substrate receiving station are arranged in a vertical stack within the housing. In some embodiments the integrated thermal unit further comprises a substrate transfer shuttle positioned within the housing and adapted to transfer substrates between the substrate receiving station, bake station and chill stations.
摘要翻译：一种集成热单元，包括壳体; 位于所述壳体内的烘烤站，所述烘焙站包括被配置为加热支撑在所述烤盘表面上的基底的烘烤板; 位于所述壳体内的冷却站，所述冷却站包括构造成冷却支撑在所述冷却板的表面上的基板的冷却板; 以及位于所述壳体内的基板接收台，所述基板接收台被配置为保持基板; 其中烘烤站，冷却站和衬底接收站被布置在壳体内的垂直堆叠中。在一些实施例中，集成热单元还包括位于壳体内并适于在衬底接收站，烘烤站和冷却站之间传送衬底的衬底传送梭。

9. 发明申请

WO2008005871A2 ZONE CONTROL HEATER PLATE FOR TRACK LITHOGRAPHY SYSTEMS 审中-公开
标题翻译：用于轨道光刻系统的区域控制加热板
公开(公告)号：WO2008005871A2
公开(公告)日：2008-01-10
申请号：PCT/US2007072543
申请日：2007-06-29
申请人： SOKUDO CO LTD , SALINAS MARTIN JEFF , QUACH DAVID H
发明人： SALINAS MARTIN JEFF , QUACH DAVID H
IPC分类号： H05B3/68
CPC分类号： H05B3/143 , H01L21/67103 , H01L21/67248
摘要： A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned signal layer, adapted to facilitate electrical connections to the plurality of wires.
摘要翻译：一种基板加热器，包括具有上表面，下表面和在上表面和下表面之间延伸的周边表面的烘烤板，所述烘烤板包括至少一个加热元件，至少一个温度传感器和多个包括在耦合到所述加热元件的至少一个线和耦合到所述温度传感器的至少一个线; 与烘烤板的下部和外周侧表面间隔开并且通常围绕烘烤板的下部和外周侧表面的护罩，所述护罩具有面向烘烤板的下表面的内部上表面，面向烘烤板的周边侧表面的内侧表面和下表面与内部上表面相对; 形成在所述屏蔽的下表面上的图案化信号层，其中所述多个导线电耦合到形成在所述图案化信号层中的对应的多个信号迹线; 以及电连接到所述图案化信号层中的所述多个信号迹线的连接器，适于促进与所述多根电线的电连接。

10. 发明专利

JP2011091048A Dual mode inductively coupling plasma reactor with adjustable phase coil assembly 有权
标题翻译：双模感应耦合等离子体反应器，可调节相线圈组件
公开(公告)号：JP2011091048A
公开(公告)日：2011-05-06
申请号：JP2010239093
申请日：2010-10-25
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： BANNA SAMER , TODOROW VALENTIN N , COLLINS KENNETH S , NGUYEN ANDREW , SALINAS MARTIN JEFF , CHEN ZHIGANG , AGARWAL ANKUR , PAL ANNIRUDDHA , WANG TSE-CHIANG
IPC分类号： H05H1/46 , H01L21/3065
CPC分类号： H01J37/32165 , H01J37/321 , H01J37/3211 , H01J37/32174
摘要： PROBLEM TO BE SOLVED: To provide an inductively coupled plasma reactor having etching rate uniformity improved through strengthening of RF control of an ICP source. SOLUTION: The dual mode inductively coupled plasma reactor 100 includes a process chamber 110 having a dielectric lid 120 and a plasma source assembly 160 disposed above the dielectric lid 120. The plasma source assembly 160 includes: coils 109, 111 configured to inductively couple RF energy into the process chamber 110 to form and maintain plasma in the process chamber 110; a phase controller for controlling the relative phase of an RF current applied to each of the coils 109, 111; and an RF generator 118 coupled to the phase controller 104 and the coils 109, 111. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过强化ICP源的RF控制来提高蚀刻速率均匀性的电感耦合等离子体反应器。解决方案：双模电感耦合等离子体反应器100包括具有电介质盖120和设置在电介质盖120上方的等离子体源组件160的处理室110.等离子体源组件160包括：被配置为感应地形成的线圈109,111 将RF能量耦合到处理室110中以在处理室110中形成和维持等离子体; 相位控制器，用于控制施加到每个线圈109,111的RF电流的相对相位; 以及耦合到相位控制器104和线圈109,111的RF发生器118.版权所有（C）2011，JPO＆INPIT

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