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1. 发明申请

WO2012051022A3 METHOD AND APPARATUS FOR REDUCING PARTICLE DEFECTS IN PLASMA ETCH CHAMBERS 审中-公开
标题翻译：用于减少等离子体蚀刻室中的微粒缺陷的方法和设备
公开(公告)号：WO2012051022A3
公开(公告)日：2012-07-12
申请号：PCT/US2011054953
申请日：2011-10-05
申请人： APPLIED MATERIALS INC , WANG XIKUN , NGUYEN ANDREW , LEE CHANGHUN , HE XIAOMING , SHEN MEIHUA
发明人： WANG XIKUN , NGUYEN ANDREW , LEE CHANGHUN , HE XIAOMING , SHEN MEIHUA
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01J37/32862 , H01J37/3244
摘要： In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.
摘要翻译：采用现场沉积腔室涂层的原位低压腔室清洁和用于等离子体处理系统的气体喷嘴装置。用于导体蚀刻应用的某些腔室清洁实施例包括在低于30mT的压力下执行基于NF3的等离子体清洁以从气体喷嘴孔的内表面去除原位沉积的SiOx涂层。实施例包括具有足够小尺寸的底孔的气体喷嘴，以减少或防止现场沉积的室涂层在喷嘴孔的内表面上形成SiO x沉积物。

2. 发明申请

WO2010030529A3 LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于等离子体处理室的低倾斜边缘环
公开(公告)号：WO2010030529A3
公开(公告)日：2010-06-10
申请号：PCT/US2009055596
申请日：2009-09-01
申请人： APPLIED MATERIALS INC , LEE CHANGHUN , WILLWERTH MICHAEL D , NGUYEN HOAN
发明人： LEE CHANGHUN , WILLWERTH MICHAEL D , NGUYEN HOAN
IPC分类号： H05H1/34 , H01L21/3065 , H05H1/38
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , H01L21/68735 , H01L21/68757
摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.
摘要翻译：提供了用于等离子体处理室中的盖环的实施例。在一个实施例中，用于等离子体处理室中的盖环包括由含钇（Y）材料制成的环形主体。主体包括具有内部定位环和外部定位环的底部表面。内定位环比外定位环更远离主体地延伸。该主体包括内径壁，该内径壁具有由大致水平的陆地分开的主壁和次壁。本体还包括具有在顶点处与内倾斜表面相交的外倾斜顶表面的顶表面。内倾斜表面限定与垂直于本体的中心线的线成小于约70度的角度。

3. 发明专利

JP2009135498A Method for adjusting critical dimension uniformity in etch process 审中-公开
标题翻译：调整过程中关键尺寸均匀性的方法
公开(公告)号：JP2009135498A
公开(公告)日：2009-06-18
申请号：JP2008301079
申请日：2008-11-26
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： DING GUOWEN , LEE CHANGHUN , SU TEH-TIEN
IPC分类号： H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32136
摘要： PROBLEM TO BE SOLVED: To provide a method for forming features with desired profile and uniform critical dimension (CD) of the features across a substrate, by etching a metal material layer disposed on the substrate.
SOLUTION: In one embodiment, a method for etching the material layer disposed on the substrate includes providing a substrate having a metal layer disposed on the substrate into an etch reactor, and flowing a gas mixture containing at least a chlorine containing gas and a passivation gas into the reactor. The passivation gas includes a nitrogen gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas has a gas flow rate ratio between about 1:3 to about 20:1. The method includes etching the metal layer using a plasma formed from the gas mixture.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过蚀刻设置在基板上的金属材料层，提供一种用于形成具有期望的轮廓和特征横跨衬底的均匀临界尺寸（CD）的特征的方法。解决方案：在一个实施例中，用于蚀刻设置在衬底上的材料层的方法包括：将具有设置在衬底上的金属层的衬底提供到蚀刻反应器中，并且使含有至少含氯气体的气体混合物和钝化气体进入反应器。钝化气体包括氮气和不饱和烃气体，其中氮气和不饱和烃气体的气体流速比在约1:3至约20:1之间。该方法包括使用由气体混合物形成的等离子体来蚀刻金属层。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008277812A Hydrogen ashing improved by water vapor and dilution gas 审中-公开
标题翻译：由水蒸汽和稀释气体改善的氢气吸附
公开(公告)号：JP2008277812A
公开(公告)日：2008-11-13
申请号：JP2008107477
申请日：2008-04-17
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： YANG CHAN-SYUN , LEE CHANGHUN
IPC分类号： H01L21/3065 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02063 , H01L21/31138 , H01L21/76814
摘要： PROBLEM TO BE SOLVED: To provide an oxygen-free hydrogen plasma ashing process that is particularly useful for low-k dielectric materials, based on hydrogenated silicon oxycarbide materials.
SOLUTION: The main ashing process includes exposing a previously etched dielectric layer to plasma (48) of hydrogen (50) and optional nitrogen (54), a larger amount of water vapor (60), and further a large amount of argon (80) or helium. For a porous low-k dielectric, especially main ashing plasma further includes a hydrocarbon gas (84), such as methane. Main ashing may be preceded by short surface treatment by plasma of a hydrogen-containing reducing gas, such as, the hydrogen and the optional nitrogen.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供基于氢化碳氧化硅材料的低k电介质材料特别有用的无氧氢等离子体灰化方法。解决方案：主灰化过程包括将先前蚀刻的电介质层暴露于氢（50）和任选的氮（54）的等离子体（48），更大量的水蒸气（60），以及进一步大量的氩（80）或氦。对于多孔低k电介质，特别是主灰化等离子体还包括烃气体（例如甲烷）。之前可以通过含氢还原气体例如氢气和任选的氮气的等离子体进行表面处理。版权所有（C）2009，JPO＆INPIT

5. 发明专利

SG10202111017VA WAFER BASED CORROSION & TIME DEPENDENT CHEMICAL EFFECTS 未知
公开(公告)号：SG10202111017VA
公开(公告)日：2021-11-29
申请号：SG10202111017V
申请日：2018-03-28
申请人： APPLIED MATERIALS INC
发明人： TEDESCHI LEONARD , MCCORMICK DANIEL , DIAZ ADAUTO , SCHWARZ BENJAMIN , HSIEH PING , LEE CHANGHUN
摘要： Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an alternative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms.

6. 发明专利

SG153011A1 METHODS FOR ADJUSTING CRITICAL DIMENSION UNIFORMITY IN AN ETCH PROCESS 未知
公开(公告)号：SG153011A1
公开(公告)日：2009-06-29
申请号：SG2008084501
申请日：2008-11-13
申请人： APPLIED MATERIALS INC
发明人： DING GUOWEN , LEE CHANGHUN , SU TEH-TIEN
摘要： Methods for etching a metal material layer disposed on a substrate to form features with desired profile and uniform critical dimension (CD) of the features across the substrate. In one embodiment, a method for etching a material layer disposed on a substrate includes providing a substrate having a metal layer disposed on a substrate into an etch reactor, flowing a gas mixture containing at least a chlorine containing gas and a passivation gas into the reactor, the passivation gas including a nitrogen gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas has a gas flow rate ratio between about 1:3 and about 20:1, and etching the metal layer using a plasma formed from the gas mixture.

7. 发明专利

SG11201909174YA WAFER BASED CORROSION & TIME DEPENDENT CHEMICAL EFFECTS 未知
公开(公告)号：SG11201909174YA
公开(公告)日：2019-10-30
申请号：SG11201909174Y
申请日：2018-03-28
申请人： APPLIED MATERIALS INC
发明人： TEDESCHI LEONARD , MCCORMICK DANIEL , DIAZ ADAUTO , SCHWARZ BENJAMIN , HSIEH PING , LEE CHANGHUN
IPC分类号： H01L21/66
摘要： N00 O C (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 11 October 2018 (11.10.2018) WIPO I PCT omit °nolo mol mom om onno oimIE (10) International Publication Number WO 2018/187125 Al (51) International Patent Classification: HO1L 21/66 (2006.01) (21) International Application Number: PCT/US2018/024964 (22) International Filing Date: 28 March 2018 (28.03.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/480,337 05 April 2017 (05.04.2017) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, CA 95054 (US). (72) Inventors: TEDESCHI, Leonard; 10028 Bon Vista Court, San Jose, CA 95127 (US). MCCORMICK, Daniel, T.; 855 Folsom Street, Unit 733, San Francisco, CA 94107 (US). DIAZ, Adauto; 18700 Wooddell Court, Saratoga, CA 95070 (US). SCHWARZ, Benjamin; 5596 Lefevre Drive, San Jose, CA 95118 (US). HSIEH, Ping, Han; 488 Clabria Place, San Jose, CA 95128 (US). LEE, Changhun; 821 Figwood Court, San Jose, CA 95120 (US). (74) Agent: BERNADICOU, Michael, A. et al.; Schwabe, Williamson & Wyatt, P.C., 1211 Sw 5Th Avenue, Suite 1900, Portland, OR 97201 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, (54) Title: WAFER BASED CORROSION & TIME DEPENDENT CHEMICAL EFFECTS FORM I NG A SENSOR ON SUBSTRATE I 591 592 PLACING A SUBSTRATE IN A TESTING CHAMBER EXECUTING DIAGNOSTIC PROCEDURE ON THE SUBSTRATE 1_2)3 RECORDING ELECTRICAL OUTPUTS FROM THE SENSOR DURING DIAGNOSTIC PROCEDURE DETERM I NI NG A SUBSEQUENT PROCESSING OPERATION BASED ON THE RECORDED ELECTRICAL OUTPUTS FROM THE SENSOR 594 595 FIG. 5 (57) : Embodiments may also include a residual chemical reaction diagnostic device. The residual chemical reaction diagnostic device may include a substrate and a residual chemical reaction sensor formed on the substrate. In an embodiment, the residual chemical reaction sensor provides electrical outputs in response to the presence of residual chemical reactions. In an embodiment, the substrate is a device substrate, and the sensor is formed in a scribe line of the device substrate. In an altenative embodiment, the substrate is a process development substrate. In some embodiments, the residual chemical reaction sensor includes, a first probe pad, wherein a plurality of first arms extend out from the first probe pad, and a second probe pad, wherein a plurality of second arms extend out from the second probe pad and are interdigitated with the first arms. [Continued on next page] WO 2018/187125 Al MIDEDIMOMOIDEIREEMOMOHOMOHOHOMEEN SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

8. 发明专利

SG147394A1 HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS 未知
公开(公告)号：SG147394A1
公开(公告)日：2008-11-28
申请号：SG2008030132
申请日：2008-04-18
申请人： APPLIED MATERIALS INC
发明人： YANG CHAN-SYUN , LEE CHANGHUN
摘要： HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a previously etched dielectric layer to a plasma (48) of hydrogen (50) and optional nitrogen (54), a larger amount of water vapor (60), and a yet larger amount of argon (80) or helium. Especially for porous low-k dielectrics, the main ashing plasma additionally contains a hydrocarbon gas (84) such as methane. The main ashing may be preceded by a short surface treatment by a plasma of a hydrogen-containing reducing gas such as hydrogen and optional nitrogen.

9. 发明专利

AU2011313919A1 Method and apparatus for reducing particle defects in plasma etch chambers 未知
公开(公告)号：AU2011313919A1
公开(公告)日：2013-05-02
申请号：AU2011313919
申请日：2011-10-05
申请人： APPLIED MATERIALS INC
发明人： WANG XIKUN , NGUYEN ANDREW , LEE CHANGHUN , HE XIAOMING , SHEN MEIHUA
IPC分类号： H01L21/3065 , H05H1/34
摘要： In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF

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