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1. 发明申请

WO2006102318A3 ELECTROLESS DEPOSITION PROCESS ON A CONTACT CONTAINING SILICON OR SILICIDE 审中-公开
标题翻译：在含硅或硅的接触处的电沉积工艺
公开(公告)号：WO2006102318A3
公开(公告)日：2009-04-09
申请号：PCT/US2006010220
申请日：2006-03-20
申请人： APPLIED MATERIALS INC , STEWART MICHAEL P , WEIDMAN TIMOTHY W , SHANMUGASUNDRAM ARULKUMAR , ZHU ZHIZE , GANDIKOTA SRINIVAS , GELATOS AVGERINOS V JERRY , ROSATO JOHN J , EAGLESHAM DAVID J
发明人： STEWART MICHAEL P , WEIDMAN TIMOTHY W , SHANMUGASUNDRAM ARULKUMAR , ZHU ZHIZE , GANDIKOTA SRINIVAS , GELATOS AVGERINOS V JERRY , ROSATO JOHN J , EAGLESHAM DAVID J
IPC分类号： C23C18/34 , C23C18/36
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate (300) during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate (300)contains a contact aperture (310) having an exposed silicon contact surface (314). In another embodiment, the substrate (300) contains a contact aperture (310)having an exposed suicide contact surface (315). The apertures (310) are filled with a metal contact material (320) by exposing the substrate (300) to an electroless deposition process. The metal contact material (320) may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures (310), the substrate may be exposed to a variety of pretreatment processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer (318).
摘要翻译：本文所述的实施方案提供了在无电沉积工艺期间将材料沉积在基底（300）上的方法以及无电沉积溶液的组成。在一个实施例中，衬底（300）包含具有暴露的硅接触表面（314）的接触孔（310）。在另一个实施例中，衬底（300）包含具有暴露的硅化物接触表面（315）的接触孔（310）。通过将基板（300）暴露于无电沉积工艺，孔（310）填充有金属接触材料（320）。金属接触材料（320）可以含有钴材料，镍材料或其合金。在填充孔（310）之前，可以将基底暴露于各种预处理过程和激活过程。预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。该方法的实施方案还提供附加层的沉积，例如覆盖层（318）。

2. 发明申请

WO2006102180A3 CONTACT METALLIZATION METHODS AND PROCESSES 审中-公开
标题翻译：接触金属化方法和工艺
公开(公告)号：WO2006102180A3
公开(公告)日：2007-10-04
申请号：PCT/US2006009918
申请日：2006-03-20
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , WIJEKOON KAPILA P , ZHU ZHIZE , GELATOS AVGERINOS V JERRY , KHANDELWAL AMIT , SHANMUGASUNDRAM ARULKUMAR , YANG MICHAEL X , WANG YAXIN , MEI FANG , MOGHADAM FARHAD K , STEWART MICHAEL P , KRISHNA NETY M , KONECNI ANTHONY , GANDIKOTA SRINIVAS
发明人： WEIDMAN TIMOTHY W , WIJEKOON KAPILA P , ZHU ZHIZE , GELATOS AVGERINOS V JERRY , KHANDELWAL AMIT , SHANMUGASUNDRAM ARULKUMAR , YANG MICHAEL X , WANG YAXIN , MEI FANG , MOGHADAM FARHAD K , STEWART MICHAEL P , KRISHNA NETY M , KONECNI ANTHONY , GANDIKOTA SRINIVAS
IPC分类号： H01L21/4763
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact and then filing the contact using an PVD, CVD, ALD, electrochemical plating and/or electroless deposition processes. In one embodiment, the barrier layer contains catalytically active surface that allows the electroless deposition of a metal on the surface. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one embodiment, a method for depositing a material on a substrate includes positioning a substrate within a process chamber, exposing the substrate to at least one pretreatment step and filling the contact by an electroless deposition process. Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device, which include novel methods of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer.
摘要翻译：本发明的实施例通常提供通过在接触件上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀和/或无电沉积工艺来填充接触来填充在半导体器件中形成的接触电平特征的方法。在一个实施方案中，阻挡层含有催化活性表面，其允许在表面上无电沉积金属。一方面，无电沉积金属是铜或铜合金。在一个实施例中，用于在衬底上沉积材料的方法包括将衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电镀沉积工艺填充接触。本发明的实施例提供了填充形成在半导体器件中的接触电平特征的简化方法，其包括形成包含硅化物界面和钨CVD沉积层的接触电平特征的新颖方法。

3. 发明申请

WO2007016218A2 INTEGRATED ELECTROLESS DEPOSITION SYSTEM 审中-公开
标题翻译：集成电沉积系统
公开(公告)号：WO2007016218A2
公开(公告)日：2007-02-08
申请号：PCT/US2006029137
申请日：2006-07-28
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , D AMBRA ALLEN , WEIDMAN TIMOTHY W , STEWART MICHAEL P , RABINOVICH EUGENE , SHERMAN SVETLANA , BIRANG MANOOCHER , WANG YAXIN , YANG MICHAEL X , HANSEN BRADLEY
发明人： LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , D AMBRA ALLEN , WEIDMAN TIMOTHY W , STEWART MICHAEL P , RABINOVICH EUGENE , SHERMAN SVETLANA , BIRANG MANOOCHER , WANG YAXIN , YANG MICHAEL X , HANSEN BRADLEY
IPC分类号： G09G3/00 , C23C16/00 , H05H1/24
CPC分类号： H01L21/6723 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/1685 , C23C18/1689 , C23C18/1889 , C25D7/123 , H01L21/67046 , H01L21/67051 , H01L21/67109
摘要： Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Embodiments further provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed.
摘要翻译：本发明的实施方案提供了通过使用一种或多种化学镀，CVD和/或ALD工艺将材料沉积到衬底的表面上的方法。本发明的实施方案提供了一种用于在基板上沉积种子层的方法，该方法具有无电解方法，并随后在单个基板处理平台上用ECP工艺填充基板上的互连特征。其它方面提供了一种用于在衬底上沉积种子层的方法，在衬底上填充互连特征，或者在衬底上顺序地沉积种子层和填充互连特征。一个实施例提供了一种在衬底互连上形成覆盖层的方法。实施例还提供了一种集群工具，其被配置为通过使用一个或多个无电镀，CVD和/或ALD处理室将材料沉积到衬底表面上。一方面，形成含钌催化剂层。

4. 发明申请

WO2007121336A3 RELIABLE FUEL CELL ELECTRODE DESIGN 审中-公开
标题翻译：可靠的燃料电池电极设计
公开(公告)号：WO2007121336A3
公开(公告)日：2008-05-29
申请号：PCT/US2007066596
申请日：2007-04-13
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , ARMSTRONG KARL J , EAGLESHAM DAVID J , KRISHNA NETY , HOFMANN RALF , STEWART MICHAEL P
发明人： WEIDMAN TIMOTHY W , ARMSTRONG KARL J , EAGLESHAM DAVID J , KRISHNA NETY , HOFMANN RALF , STEWART MICHAEL P
IPC分类号： H01M4/00
CPC分类号： H01M4/8867 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/3455 , H01M4/8817 , H01M4/92 , H01M8/0206 , H01M8/021 , H01M8/023 , H01M8/0236 , H01M8/0245 , H01M8/086 , H01M8/1004 , Y02P70/56
摘要： The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.
摘要翻译：本发明一般涉及燃料电池部件的制造和形成具有改善的寿命，降低生产成本和改进工艺性能的各种燃料电池部件的方法。本发明通常包括通过沉积对基材具有良好粘附性的材料层或低层电阻（高导电性）并且在燃料电池操作期间具有良好的抗化学侵蚀性能来处理或调理基材表面。基板可以是例如燃料电池部件，导电板，隔板，双极板或端板等。在一个实施方案中，通过将其至少一部分暴露于包含四氧化钌的气体或液体来处理或调理基底表面。

5. 发明申请

WO2010009295A3 HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A METAL LAYER MASK 审中-公开
标题翻译：使用金属层掩模的混合异相太阳能电池制造
公开(公告)号：WO2010009295A3
公开(公告)日：2010-03-11
申请号：PCT/US2009050808
申请日：2009-07-16
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
发明人： WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define active regions of the device and regions where the device and/or contact structure is to be located on a surface of a solar cell substrate. The method generally includes the steps of forming one or more layers on a backside of a solar cell substrate to prevent attack of the backside surface of the substrate, and provide a stable supporting surface, when the front side regions of a solar cell are formed. In one embodiment, the one or more layers are a metalized backside contact structure that is formed on the backside of the solar cell substrate. In another embodiment, the one or more layers are a chemical resistant dielectric layer that is formed over the backside of the solar cell substrate.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括使用各种蚀刻和图案化工艺，其用于限定器件的有源区和器件和/或接触结构将位于太阳能电池基板的表面上的区域。该方法通常包括以下步骤：在太阳能电池基板的背面形成一个或多个层，以防止在形成太阳能电池的前侧区域时衬底的背面发生侵蚀，并提供稳定的支撑表面。在一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的金属化的背面接触结构。在另一个实施例中，一个或多个层是形成在太阳能电池基板的背面上的耐化学电介质层。

6. 发明申请

WO2007111679A2 METHOD OF SELECTIVELY DEPOSITING A THIN FILM MATERIAL AT A SEMICONDUCTOR INTERFACE 审中-公开
标题翻译：在半导体界面选择性地沉积薄膜材料的方法
公开(公告)号：WO2007111679A2
公开(公告)日：2007-10-04
申请号：PCT/US2006060273
申请日：2006-10-26
申请人： APPLIED MATERIALS INC , STEWART MICHAEL P , WEIDMAN TIMOTHY W
发明人： STEWART MICHAEL P , WEIDMAN TIMOTHY W
IPC分类号： C11D7/32
CPC分类号： C11D7/08 , C11D7/3218 , C11D11/0047 , H01L21/02063 , H01L21/28518 , H01L21/76814
摘要： Embodiments of the invention provide processes to form a high quality contact level connection to devices formed on a substrate. In one embodiment, a method for depositing a material on a substrate is provided which includes exposing the substrate to a buffered oxide etch solution to form a silicon hydride layer during a pretreatment process, depositing a metal silicide layer on the substrate, and depositing a first metal layer (e.g., tungsten) on the metal silicide layer. The buffered oxide etch solution may contain hydrogen fluoride and an alkanolamine compound, such as ethanolamine, diethanolamine, or triethanolamine. The metal silicide layer may contain cobalt, nickel, or tungsten and may be deposited by an electroless deposition process. In one example, the substrate is exposed to an electroless deposition solution containing a solvent and a complexed metal compound.
摘要翻译：本发明的实施例提供了形成与形成在衬底上的器件的高质量接触水平连接的过程。在一个实施例中，提供了用于在衬底上沉积材料的方法，其包括：在预处理工艺期间将衬底暴露于缓冲氧化物蚀刻溶液以形成硅氢化物层;在衬底上沉积金属硅化物层;以及沉积第一金属硅化物层上的金属层（例如，钨）。缓冲氧化物蚀刻溶液可以包含氟化氢和链烷醇胺化合物，例如乙醇胺，二乙醇胺或三乙醇胺。金属硅化物层可以包含钴，镍或钨，并且可以通过无电沉积工艺来沉积。在一个实例中，将衬底暴露于含有溶剂和络合金属化合物的无电沉积溶液。

7. 发明申请

WO2011126660A2 METHOD OF FORMING A NEGATIVELY CHARGED PASSIVATION LAYER OVER A DIFFUSED P-TYPE REGION 审中-公开
标题翻译：在扩展的P型区域形成负电荷的钝化层的方法
公开(公告)号：WO2011126660A2
公开(公告)日：2011-10-13
申请号：PCT/US2011027914
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , STEWART MICHAEL P , AGRAWAL MUKUL , MISHRA ROHIT , MUNGEKAR HEMANT , WEIDMAN TIMOTHY W
发明人： STEWART MICHAEL P , AGRAWAL MUKUL , MISHRA ROHIT , MUNGEKAR HEMANT , WEIDMAN TIMOTHY W
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/068 , Y02E10/547
摘要： The present invention generally provides a method of forming a high quality passivation layer over a p-type doped region to form a high efficiency solar cell device. Embodiments of the present invention may be especially useful for preparing a surface of a boron doped region formed in a silicon substrate. In one embodiment, the methods include exposing a surface of the solar cell substrate to a plasma to clean and modify the physical, chemical and/or electrical characteristics of the surface and then deposit a charged dielectric layer and passivation layer thereon.
摘要翻译：本发明通常提供一种在p型掺杂区上形成高质量钝化层以形成高效太阳能电池器件的方法。本发明的实施例可以特别用于制备形成在硅衬底中的硼掺杂区的表面。在一个实施例中，所述方法包括将太阳能电池基板的表面暴露于等离子体以清洁和修改表面的物理，化学和/或电特性，然后在其上沉积带电介质层和钝化层。

8. 发明申请

WO2011140355A3 OXIDE NITRIDE STACK FOR BACKSIDE REFLECTOR OF SOLAR CELL 审中-公开
标题翻译：用于太阳能电池背反射器的氧化物氮化物堆叠
公开(公告)号：WO2011140355A3
公开(公告)日：2012-01-26
申请号：PCT/US2011035380
申请日：2011-05-05
申请人： APPLIED MATERIALS INC , MUNGEKAR HEMANT , AGRAWAL MUKUL , STEWART MICHAEL P , WEIDMAN TIMOTHY W , MISHRA ROHIT , PAAK SUNHOM
发明人： MUNGEKAR HEMANT , AGRAWAL MUKUL , STEWART MICHAEL P , WEIDMAN TIMOTHY W , MISHRA ROHIT , PAAK SUNHOM
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/056 , Y02E10/52
摘要： Embodiments of the invention generally provide methods for forming a multilayer rear surface passivation layer on a solar cell substrate. The method includes forming a silicon oxide sub-layer having a net charge density of less than or equal to 2.1 x 1011 Coulombs/cm2 on a rear surface of a p-type doped region formed in a substrate comprising semiconductor material, the rear surface opposite a light receiving surface of the substrate and forming a silicon nitride sub-layer on the silicon oxide sub-layer. Embodiments of the invention also include a solar cell device that may be manufactured according methods disclosed herein.
摘要翻译：本发明的实施例通常提供在太阳能电池基板上形成多层后表面钝化层的方法。该方法包括在形成于包含半导体材料的衬底的p型掺杂区域的后表面上形成净电荷密度小于或等于2.1×10 11库仑/ cm 2的氧化硅子层，所述衬底的光接收表面并在所述氧化硅子层上形成氮化硅子层。本发明的实施例还包括可以根据本文公开的方法制造的太阳能电池装置。

9. 发明申请

WO2010009297A3 HYBRID HETEROJUNCTION SOLAR CELL FABRICATION USING A DOPING LAYER MASK 审中-公开
标题翻译：混合异常太阳能电池制造使用DOPING LAYER MASK
公开(公告)号：WO2010009297A3
公开(公告)日：2011-02-24
申请号：PCT/US2009050811
申请日：2009-07-16
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
发明人： WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , CHA YONGHWA CHRIS , WIJEKOON KAPILA P , FANG HONGBIN
IPC分类号： H01L31/042
CPC分类号： H01L31/022425 , H01L21/67155 , H01L31/0236 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.
摘要翻译：本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在基板的背面上沉积金属层，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

10. 发明申请

WO2010025262A3 BACK CONTACT SOLAR CELLS USING PRINTED DIELECTRIC BARRIER 审中-公开
标题翻译：使用印刷电介质背板接触太阳能电池
公开(公告)号：WO2010025262A3
公开(公告)日：2010-06-03
申请号：PCT/US2009055211
申请日：2009-08-27
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , WIJEKOON KAPILA P , CHA YONGHWA CHRIS , HOLTAM TRISTAN , SHAH VINAY
发明人： WEIDMAN TIMOTHY W , MISHRA ROHIT , STEWART MICHAEL P , WIJEKOON KAPILA P , CHA YONGHWA CHRIS , HOLTAM TRISTAN , SHAH VINAY
IPC分类号： H01L31/042
CPC分类号： H01L21/67034 , G01T1/2018 , H01L21/225 , H01L21/306 , H01L21/308 , H01L21/67727 , H01L21/67736 , H01L21/67745 , H01L21/6776 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.
摘要翻译：本发明的实施例考虑使用新颖方法来形成高效太阳能电池以形成太阳能电池器件的有源掺杂区域和金属接触结构。在一个实施例中，该方法包括沉积用于限定太阳能电池器件的有源区和/或接触结构的边界的电介质材料的步骤。可以使用各种技术来形成太阳能电池和金属接触结构的有源区域。

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