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1. 发明申请

WO2007016013A2 UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PARTICLE FORMATION 审中-公开
标题翻译： CVD阻塞板防止颗粒形成的独特钝化技术
公开(公告)号：WO2007016013A2
公开(公告)日：2007-02-08
申请号：PCT/US2006028582
申请日：2006-07-24
申请人： APPLIED MATERIALS INC , RITCHIE ALAN A , LEE WEI TI , GUO TED
发明人： RITCHIE ALAN A , LEE WEI TI , GUO TED
IPC分类号： C23C14/32 , C23C16/00 , C23F1/00
CPC分类号： C23C16/45561 , C23C14/165 , C23C16/4402 , C23C16/4404 , C23C16/45565 , C23C16/45591 , Y10T29/497 , Y10T29/49826 , Y10T137/0491 , Y10T137/9029
摘要： Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that at least about 99.5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.
摘要翻译：提供用于化学气相沉积室的阻挡板和处理阻挡板的方法。阻挡板限定穿过其中的多个孔并且具有至少约99.5％纯度的上表面和下表面，其使阻挡板上污染颗粒的成核最小化。可以在阻挡板的上表面和下表面上形成物理气相沉积涂层，例如铝物理气相沉积涂层。还提供包括其上具有物理气相沉积涂层的阻挡板的化学气相沉积室。

2. 发明申请

WO2007024465A2 ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开
标题翻译：漂白抛光铝铝溅射
公开(公告)号：WO2007024465A2
公开(公告)日：2007-03-01
申请号：PCT/US2006030784
申请日：2006-08-08
申请人： APPLIED MATERIALS INC , LEE WEI TI , GUO TED , YO SANG-HO
发明人： LEE WEI TI , GUO TED , YO SANG-HO
IPC分类号： C23C14/00
CPC分类号： C23C14/185 , C23C14/025 , C23C14/046 , C23C14/345
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.
摘要翻译：铝溅射工艺包括RF偏置晶片和两步铝填充工艺和装置，用于通过在两个明显不同的条件下优选在两个不同的等离子体溅射反应器（168,170）中的溅射将铝填充到窄通孔中。第一步骤（130）包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相对高度偏置以将铝原子吸引到窄孔中并蚀刻突出端。第二步骤（132）包括在相对温暖的晶片上的更中性的溅射。保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。在第一步中围绕铝靶的背面扫描的磁控管可能（80）相对较小并且不平衡，（60）在第二步中相对较大和平衡。

3. 发明申请

WO2007044208A3 AMPOULE SPLASH GUARD APPARATUS 审中-公开
公开(公告)号：WO2007044208A3
公开(公告)日：2007-11-22
申请号：PCT/US2006037217
申请日：2006-09-26
申请人： APPLIED MATERIALS INC , LEE WEI TI , CHIAO STEVE H
发明人： LEE WEI TI , CHIAO STEVE H
IPC分类号： F26B25/06 , B01F3/04
CPC分类号： C23C16/4482 , Y10S261/65
摘要： Embodiments of the invention provide an apparatus for generating a precursor gas used in a vapor deposition process system. The apparatus contains a canister or an ampoule for containing a chemical precursor and a splash guard contained within the ampoule. The splash guard is positioned to obstruct the chemical precursor in a liquid state from being bumped or splashed into a gas outlet during the introduction of a carrier gas into the ampoule. The carrier gas is usually directed into the ampoule through a gas inlet and combines with the vaporized chemical precursor to form a precursor gas. The splash guard is also positioned to permit the passage of the precursor gas from the gas outlet. In one example, the gas outlet contains a stem with a tapered tip and the splash guard is positioned at an angle parallel to the plane of the tapered tip.
摘要翻译：本发明的实施例提供一种用于产生在气相沉积工艺系统中使用的前体气体的装置。该装置包含用于容纳安瓿内的化学前体和防溅罩的罐或安瓿。飞溅防护罩的定位是在将载气引入安瓿中时，阻止液态的化学前体被撞击或溅入气体出口。载气通常通过气体入口引导到安瓿中，并与蒸发的化学前体结合以形成前体气体。防溅罩也被定位成允许来自气体出口的前体气体通过。在一个示例中，气体出口包含具有锥形尖端的杆，并且防溅罩以与锥形尖端的平面平行的角度定位。

4. 发明申请

WO2011153095A3 METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF 审中-公开
标题翻译：金属门结构及其形成方法
公开(公告)号：WO2011153095A3
公开(公告)日：2012-03-01
申请号：PCT/US2011038357
申请日：2011-05-27
申请人： APPLIED MATERIALS INC , GANGULI SESHADRI , YU SANG HO , LEE SANG-HYEOB , HA HYOUNG-CHAN , LEE WEI TI , KIM HOON , GANDIKOTA SRINIVAS , LEI YU , MORAES KEVIN , TANG XIANMIN
发明人： GANGULI SESHADRI , YU SANG HO , LEE SANG-HYEOB , HA HYOUNG-CHAN , LEE WEI TI , KIM HOON , GANDIKOTA SRINIVAS , LEI YU , MORAES KEVIN , TANG XIANMIN
IPC分类号： H01L29/78 , H01L21/31 , H01L21/336
CPC分类号： H01L21/28079 , H01L21/28088 , H01L21/32051 , H01L29/49
摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.
摘要翻译：本文提供了金属门结构及其形成方法。在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层第二层或第三层形成功函数层，并且其中第三层形成栅电极。

5. 发明申请

WO2011119293A2 FORMATION OF LINER AND BARRIER FOR TUNGSTEN AS GATE ELECTRODE AND AS CONTACT PLUG TO REDUCE RESISTANCE AND ENHANCE DEVICE PERFORMANCE 审中-公开
标题翻译：形成衬垫和阻挡层用于钨作为门电极和接点插头以降低电阻和增强器件的性能
公开(公告)号：WO2011119293A2
公开(公告)日：2011-09-29
申请号：PCT/US2011026444
申请日：2011-02-28
申请人： APPLIED MATERIALS INC , LEE SANG-HYEOB , YU SANG HO , LEE WEI TI , GANGULI SESHADRI , HA HYOUNG-CHAN , KIM HOON
发明人： LEE SANG-HYEOB , YU SANG HO , LEE WEI TI , GANGULI SESHADRI , HA HYOUNG-CHAN , KIM HOON
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： H01L23/485 , C23C16/34 , H01L21/28088 , H01L21/28556 , H01L21/321 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L21/76886 , H01L23/53266 , H01L27/10891 , H01L29/4236 , H01L2924/0002 , H01L2924/00
摘要： The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
摘要翻译：本发明提供了一种在衬底上形成薄膜叠层的方法，该方法包括在衬底上沉积氮化钨层，使用来自远程等离子体的活性氮物质对衬底进行氮化处理，并将导电体层直接沉积在钨而不在氮化钨层上沉积钨成核层作为钨的生长位置。

6. 发明申请

WO2011159691A3 CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON 审中-公开
标题翻译：包含氧气或碳氢化合物的薄膜的化学气相沉积
公开(公告)号：WO2011159691A3
公开(公告)日：2012-06-14
申请号：PCT/US2011040336
申请日：2011-06-14
申请人： APPLIED MATERIALS INC , KIM HOON , LEE SANG-HYEOB , YU SANG HO , LEE WEI TI , GANGULI SESHADRI , HA HYOUNG-CHAN
发明人： KIM HOON , LEE SANG-HYEOB , YU SANG HO , LEE WEI TI , GANGULI SESHADRI , HA HYOUNG-CHAN
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L28/65 , B82Y40/00 , C23C16/18 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L28/91
摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.
摘要翻译：本文提供了沉积含钌膜的方法。在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基材上，并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。在一些实施例中，可以重复沉积，曝光和退火以将含钌膜沉积到所需厚度。

7. 发明申请

WO2012009308A2 METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES 审中-公开
标题翻译：用于形成用于铜互连结构的障碍物/种子层的方法
公开(公告)号：WO2012009308A2
公开(公告)日：2012-01-19
申请号：PCT/US2011043626
申请日：2011-07-12
申请人： APPLIED MATERIALS INC , KIM HOON , LEE WEI TI , YU SANG HO , GANGULI SESHADRI , HA HYOUNG-CHAN , LEE SANG-HYEOB
发明人： KIM HOON , LEE WEI TI , YU SANG HO , GANGULI SESHADRI , HA HYOUNG-CHAN , LEE SANG-HYEOB
IPC分类号： H01L21/28 , H01L21/285
CPC分类号： C25D5/02 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76831 , H01L21/76846 , H01L21/76864 , H01L21/76873 , H01L21/76898
摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).
摘要翻译：本文提供了用于形成用于互连结构的阻挡层/种子层的方法。在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底表面，所述方法可以包括形成包含锰（Mn）和钌中的至少一种的层（Ru）或钴（Co）在开口的侧壁和底表面上; 以及在所述层上沉积导电材料以填充所述开口。在一些实施例中，钌（Ru）或钴（Co）之一沉积在开口的侧壁和底表面上。材料可以通过化学气相沉积（CVD）或物理气相沉积（PVD）沉积。

8. 发明公开

EP1929062A4 ALUMINUM SPUTTERING WHILE BIASING WAFER 审中-公开
标题翻译：铝溅射，晶片偏置
公开(公告)号：EP1929062A4
公开(公告)日：2009-07-01
申请号：EP06800915
申请日：2006-08-08
申请人： APPLIED MATERIALS INC
发明人： LEE WEI TI , GUO TED , YO SANG-HO
IPC分类号： C23C14/00 , C23C14/04 , H01L21/44
CPC分类号： C23C14/185 , C23C14/025 , C23C14/046 , C23C14/345
摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors (168, 170). The first step (130) includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 15O0C, and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step (132) includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 25O0C, and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be (80) relatively small and unbalanced in the first step and (60) relatively large and balanced in the second step.

9. 发明申请

WO0191181A2 LINER MATERIALS 审中-公开
标题翻译：内衬材料
公开(公告)号：WO0191181A2
公开(公告)日：2001-11-29
申请号：PCT/US0115991
申请日：2001-05-18
申请人： APPLIED MATERIALS INC
发明人： LEE WEI TI , GUO TED , YAO GONGDA
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76877 , Y10T428/12535 , Y10T428/12611 , Y10T428/12743 , Y10T428/12806 , Y10T428/26
摘要： A method for metallizing integrated circuits is disclosed. In one aspect, an integrated circuit is metallized by depositing liner material on a substrate followed by one or more metal layers. The liner material is selected from the group of tantalum (Ta), tantalum nitride (TaN), niobium (Nb), niobium nitride (NbN), vanadium (V), vanadium nitride (VN), and combinations thereof. The liner material is preferably conformably deposited on the substrate using physical vapor deposition (PVD). The one or more metal layers are deposited on the barrier layer using chemical vapor deposition (CVD), physical vapor deposition (PVD), or a combination of both CVD and PVD.
摘要翻译：公开了一种金属化集成电路的方法。在一个方面，集成电路通过在衬底上沉积衬垫材料而后接一个或多个金属层进行金属化。衬垫材料选自钽（Ta），氮化钽（TaN），铌（Nb），氮化铌（NbN），钒（V），氮化钒（VN）及其组合。优选使用物理气相沉积（PVD）将衬垫材料适当地沉积在衬底上。使用化学气相沉积（CVD），物理气相沉积（PVD）或CVD和PVD的组合将一个或多个金属层沉积在阻挡层上。

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