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    • 6. 发明申请
    • TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING
    • 化学机械抛光的温度控制
    • WO2010126902A3
    • 2011-02-03
    • PCT/US2010032609
    • 2010-04-27
    • APPLIED MATERIALS INCXU KUNZHANG JIMINJEW STEPHENOSTERHELD THOMAS H
    • XU KUNZHANG JIMINJEW STEPHENOSTERHELD THOMAS H
    • H01L21/304H01L21/66
    • B24B55/02B24B37/015
    • A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
    • 一种化学机械抛光设备,包括用于保持具有抛光表面的垫的台板,用于在抛光步骤期间将基板和抛光表面保持在一起的子系统以及定向为测量抛光表面的温度的温度传感器,其中子系统 接受由传感器测量的温度并且被编程为响应于测量的温度改变抛光过程参数。 在一个方面,一种化学机械抛光设备,其具有用于保持具有抛光表面的垫的台板,用于将流体从源输送到抛光表面的流体输送系统,以及温度控制器,其在操作期间控制流体的温度 由运送系统运送。
    • 8. 发明申请
    • EDDY CURRENT GAIN COMPENSATION
    • EDDY当前增益补偿
    • WO2010045162A3
    • 2010-07-15
    • PCT/US2009060397
    • 2009-10-12
    • APPLIED MATERIALS INCBENNETT DOYLE EOSTERHELD THOMAS H
    • BENNETT DOYLE EOSTERHELD THOMAS H
    • H01L21/304
    • B24B37/013B24B49/105G01B7/105
    • In-situ monitoring during processing of a substrate includes processing a conductive film on a substrate in a semiconductor processing apparatus and generating a signal from an eddy current sensor during processing. The signal includes a first portion generated when the eddy current sensor is adjacent the substrate, a second portion generated when the eddy current sensor is adjacent a metal body and not adjacent the substrate, and a third portion generated when the eddy current sensor is adjacent neither the metal body nor the substrate. The second portion of the signal is compared to the third portion of the signal and a gain is determined based at least on a result of the comparing, and the first portion of the signal is multiplied by the gain to generate an adjusted signal.
    • 在处理衬底期间的原位监测包括在半导体处理设备中的衬底上处理导电膜并且在处理期间产生来自涡流传感器的信号。 信号包括当涡电流传感器邻近衬底时产生的第一部分,当涡流传感器邻近金属体并且不邻近衬底时产生的第二部分,以及当涡电流传感器不邻近衬底时产生的第三部分 金属体也不是基体。 将信号的第二部分与信号的第三部分进行比较,并且至少基于比较的结果确定增益,并且将信号的第一部分乘以增益以产生经调整的信号。
    • 9. 发明申请
    • TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING
    • 化学机械抛光温度控制
    • WO2010126902A4
    • 2011-03-31
    • PCT/US2010032609
    • 2010-04-27
    • APPLIED MATERIALS INCXU KUNZHANG JIMINJEW STEPHENOSTERHELD THOMAS H
    • XU KUNZHANG JIMINJEW STEPHENOSTERHELD THOMAS H
    • H01L21/304H01L21/66
    • B24B55/02B24B37/015
    • A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
    • 一种化学机械抛光装置,包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板,用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器,其中所述子系统 接受由传感器测量的温度,并被编程为响应于测量的温度改变抛光工艺参数。 一方面,一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置,用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器 由运送系统运输。