专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007103643A3 METHOD AND APPARATUS FOR THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 审中-公开
标题翻译：在基材上形成的热处理结构的方法和装置
公开(公告)号：WO2007103643A3
公开(公告)日：2008-05-08
申请号：PCT/US2007062672
申请日：2007-02-23
申请人： APPLIED MATERIALS INC , MAYUR ABHILASH , YAM MARK , BALAKRISHNA AJIT , CAREY PAUL , JENNINGS DEAN , MOFFATT STEPHEN , SCHAFFER WILLIAM , LERNER ALEXANDER N , THOMAS TIMOTHY N , HUNTER AARON MUIR
发明人： MAYUR ABHILASH , YAM MARK , BALAKRISHNA AJIT , CAREY PAUL , JENNINGS DEAN , MOFFATT STEPHEN , SCHAFFER WILLIAM , LERNER ALEXANDER N , THOMAS TIMOTHY N , HUNTER AARON MUIR
IPC分类号： H01L21/76
CPC分类号： H01L21/823418 , H01L21/823425 , H01L21/823475
摘要： The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps, more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
摘要翻译：本发明通常描述了一种更多的装置和各种方法，用于对基底的期望区域进行退火处理。在一个实施例中，一定量的能量被传送到衬底的表面以优先地熔化衬底的某些所需区域以去除由先前的处理步骤产生的不需要的损伤，更均匀地分布衬底的各个区域中的掺杂剂和/或激活衬底的各个区域。由于掺杂剂原子在衬底的熔融区域中的扩散速率和溶解度增加，优选熔融过程将允许掺杂剂在熔融区域中更均匀地分布。熔化区域的产生因此允许：1）掺杂剂原子更均匀地重新分布，2）在先前的待处理步骤中产生的缺陷，以及3）具有要突变的掺杂剂浓度的区域。

2. 发明申请

WO2007103643B1 METHOD AND APPARATUS FOR THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE 审中-公开
标题翻译：在基片上形成的热处理结构的方法和装置
公开(公告)号：WO2007103643B1
公开(公告)日：2008-06-26
申请号：PCT/US2007062672
申请日：2007-02-23
申请人： APPLIED MATERIALS INC , MAYUR ABHILASH , YAM MARK , BALAKRISHNA AJIT , CAREY PAUL , JENNINGS DEAN , MOFFATT STEPHEN , SCHAFFER WILLIAM , LERNER ALEXANDER N , THOMAS TIMOTHY N , HUNTER AARON MUIR
发明人： MAYUR ABHILASH , YAM MARK , BALAKRISHNA AJIT , CAREY PAUL , JENNINGS DEAN , MOFFATT STEPHEN , SCHAFFER WILLIAM , LERNER ALEXANDER N , THOMAS TIMOTHY N , HUNTER AARON MUIR
IPC分类号： H01L21/76
CPC分类号： H01L21/823418 , H01L21/823425 , H01L21/823475
摘要： The present invention generally describes one ore more apparatuses and various methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps, more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
摘要翻译：本发明总体上描述了用于在衬底的期望区域上执行退火工艺的一种或多种设备和各种方法。在一个实施方案中，一定量的能量被传递至基材表面以优先熔化基材的某些所需区域以去除由之前的处理步骤产生的不希望的损伤，更均匀地将掺杂剂分布在基材的各个区域中，和/或活化衬底的各个区域。由于掺杂剂原子在衬底的熔化区域中的扩散速率和溶解度增加，所以优先熔化过程将允许掺杂剂在熔化区域中更均匀的分布。因此，熔化区域的产生允许：1）掺杂剂原子更均匀地重新分布，2）在先前的工艺步骤中产生的待去除的缺陷，以及3）将形成具有超突变掺杂剂浓度的区域。

3. 发明申请

WO2012177743A3 NOVEL THERMAL PROCESSING APPARATUS 审中-公开
标题翻译：新型热处理装置
公开(公告)号：WO2012177743A3
公开(公告)日：2013-04-04
申请号：PCT/US2012043323
申请日：2012-06-20
申请人： APPLIED MATERIALS INC , MOFFATT STEPHEN , HOLMGREN DOUGLAS E , HOWELLS SAMUEL C , TONG EDRIC , ADAMS BRUCE E , LI JIPING , HUNTER AARON MUIR
发明人： MOFFATT STEPHEN , HOLMGREN DOUGLAS E , HOWELLS SAMUEL C , TONG EDRIC , ADAMS BRUCE E , LI JIPING , HUNTER AARON MUIR
IPC分类号： H01L21/324 , H01L21/26
CPC分类号： H01L21/477 , B23K26/0006 , B23K26/0081 , B23K26/03 , B23K26/032 , B23K26/04 , B23K26/0608 , B23K26/0622 , B23K26/08 , B23K26/127 , B23K2201/40 , B23K2203/56 , H01L21/268 , H01S3/0057
摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
摘要翻译：本发明一般涉及能够在包含在基板的表面上的退火区域上可靠地输送均匀的能量的光学系统。光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。

4. 发明申请

WO2010036621A3 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用十八烷酰基自体非晶化植入物的无缺陷接合形成
公开(公告)号：WO2010036621A3
公开(公告)日：2010-07-01
申请号：PCT/US2009057708
申请日：2009-09-21
申请人： APPLIED MATERIALS INC , LI JIPING , HUNTER AARON MUIR , ADAMS BRUCE E , MOFFITT THEODORE , MOFFATT STEPHEN
发明人： LI JIPING , HUNTER AARON MUIR , ADAMS BRUCE E , MOFFITT THEODORE , MOFFATT STEPHEN
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇注入半导体衬底的方法和装置。通过等离子体浸没或离子束注入将基板注入十八硼烷。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过子熔体退火工艺来进行。

5. 发明申请

WO2006047062A3 METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS 审中-公开
标题翻译：用于热处理硅膜的低温度色谱法的方法和装置
公开(公告)号：WO2006047062A3
公开(公告)日：2007-06-21
申请号：PCT/US2005036082
申请日：2005-10-05
申请人： APPLIED MATERIALS INC , HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
发明人： HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system (110) including a transmission pyrometer (12) monitoring the temperature dependent absorption of the silicon wafer (32) for radiation from the RTP lamps (46) at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step (170) measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized (142). The transmission pyrometer may be used for closed loop control for thermal treatments below 500°C or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure (190) with a beam splitter (204) dividing radiation from the wafer.
摘要翻译：包括透射高温计（12）的快速热处理（RTP）系统（110），其以降低的功率水平监测用于来自RTP灯（46）的辐射的硅晶片（32）的温度依赖性吸收。创建了一个查找表，其涉及具有晶圆和辐射灯温度的光电检测器光电流的非标准化值。校准步骤（170）测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化（142）。传输高温计可用于低于500°C的热处理的闭环控制，或者在预热阶段用于更高温度的过程，包括闭环控制中的辐射高温计。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。辐射和透射高温计可以被包括在分束器（204）的整体结构（190）中，分束器（204）分隔来自晶片的辐射。

6. 发明申请

WO2013033637A3 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053527
申请日：2012-08-31
申请人： APPLIED MATERIALS INC , ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
发明人： ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用向处理区域递送脉冲能量的渐进熔化过程来识别和熔化基板的处理区域。然后使用将脉冲能量递送到该区域的渐进结晶过程对治疗区域进行再结晶。在渐进结晶过程中输送的脉冲能量被选择为在熔融材料冻结时将小晶体转化为大晶体。

7. 发明申请

WO2012149331A3 OPTICAL ENDPOINT DETECTION SYSTEM 审中-公开
标题翻译：光端点检测系统
公开(公告)号：WO2012149331A3
公开(公告)日：2013-03-28
申请号：PCT/US2012035469
申请日：2012-04-27
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
发明人： RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
IPC分类号： H01L21/66
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

8. 发明申请

WO2010059300A3 PYROMETRY FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板处理的PYROMETRY
公开(公告)号：WO2010059300A3
公开(公告)日：2010-07-22
申请号：PCT/US2009059857
申请日：2009-10-07
申请人： APPLIED MATERIALS INC , PATALAY KAILASH KIRAN , HUNTER AARON MUIR , ADAMS BRUCE E
发明人： PATALAY KAILASH KIRAN , HUNTER AARON MUIR , ADAMS BRUCE E
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67248
摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.
摘要翻译：基板处理系统包括处理室，用于支撑设置在处理室内的基板的基座和耦合到处理室的光学高温测量组件，以测量基本上从基座或基板的一部分发出的发射光。光学高温测量组件还包括光接收器和光学检测器。光学高温测量组件接收一部分发射的光，并且基于发射光的部分的强度在至少一个波长附近确定。一种在处理过程中测量基板的温度的方法，包括在支撑基板或基座的基座的一部分附近设置光管，将光管的端部遮蔽于杂散光，使得光管的端部接收来自基座或基板的部分，用气体吹扫光管的端部，以减少光管的端部的污染，检测从基座发射并由光管接收的光的一部分，并且确定温度从基板或基板的发射光的部分的强度接近至少一个波长。

9. 发明专利

JP2008182228A Temperature measurement and control of wafer support in thermal processing chamber 审中-公开
标题翻译：温度测量和控制热处理室中的支撑
公开(公告)号：JP2008182228A
公开(公告)日：2008-08-07
申请号：JP2008006093
申请日：2008-01-15
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： HUNTER AARON MUIR , ADAMS BRUCE E , BEHDJAT MEHRAN , RAMANUJAM RAJESH S , RANISH JOSEPH M
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method used for RTP (Rapid Thermal Process) to improve temperature uniformity.
SOLUTION: The present invention provides an apparatus and a method for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides an apparatus and a method for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2014060423A Method and device for heat treated structure formed on substrate 有权
标题翻译：在基板上形成的热处理结构的方法和装置
公开(公告)号：JP2014060423A
公开(公告)日：2014-04-03
申请号：JP2013231220
申请日：2013-11-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： MAYUR ABHILASH , YAM MARK , AJIT BALAKRISHNA , CAREY PAUL , DEAN JENNINGS , STEPHEN MOFATT , WILLIAM SCHAFFER , LERNER ALEXANDER N , TIMOTHY N THOMAS , HUNTER AARON MUIR
IPC分类号： H01L21/265 , H01L21/268
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/67115 , H01L21/823418 , H01L29/0653 , H01L29/6659 , H01L29/66659
摘要： PROBLEM TO BE SOLVED: To provide a method for annealing a semiconductor substrate at high increasing and decreasing rates.SOLUTION: A method for heat treating a substrate comprises: a step to emit a large amount of electromagnetic energy to at least one annealing region on the surface of a substrate containing at least one first region and second region; a step with which a large amount of electromagnetic energy preferentially dissolves a material in at least one first region and at least one annealing region is arranged and sized so that it is adapted within the boundaries of at least one first region and second region.
摘要翻译：要解决的问题：提供一种以高增加和降低的速率对半导体衬底进行退火的方法。解决方案：一种用于对衬底进行热处理的方法包括：向至少一个退火区域发射大量电磁能量的步骤，包含至少一个第一区域和第二区域的衬底的表面; 其中大量的电磁能量优先溶解至少一个第一区域和至少一个退火区域中的材料的步骤被布置和尺寸使得其适应于至少一个第一区域和第二区域的边界内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式