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1. 发明申请

WO2007058715A2 METHOD OF FABRICATING A SILICON NITRIDE STACK 审中-公开
标题翻译：硅酸盐堆叠方法
公开(公告)号：WO2007058715A2
公开(公告)日：2007-05-24
申请号：PCT/US2006039496
申请日：2006-10-10
申请人： APPLIED MATERIALS INC , IYER R SURYANARAYANAN , TANDON SANJEEV , MAEDA YUJI , ZHANG KANGZHAN , LAPENA RUBI
发明人： IYER R SURYANARAYANAN , TANDON SANJEEV , MAEDA YUJI , ZHANG KANGZHAN , LAPENA RUBI
IPC分类号： H01L21/31
CPC分类号： H01L21/3081 , C23C16/345 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02271 , H01L21/31612 , H01L21/3185
摘要： Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.
摘要翻译：本文提供了在半导体衬底上制造氮化硅叠层的方法的实施例。在一个实施例中，在半导体衬底上制造氮化硅堆叠的方法包括：使用选择性地控制基底层的应力的第一组工艺条件，在衬底上沉积包括氮化硅的基底层; 以及使用选择性地控制上层的抗氧化性和折射率中的至少一种的第二组工艺条件沉积包括氮化硅的上层。

2. 发明申请

WO2006138103A3 METHOD FOR SILICON BASED DIELECTRIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：基于硅的介电化学蒸气沉积方法
公开(公告)号：WO2006138103A3
公开(公告)日：2007-08-16
申请号：PCT/US2006021787
申请日：2006-06-05
申请人： APPLIED MATERIALS INC , WANG YAXIN , MAEDA YUJI , MELE THOMAS C , SEUTTER SEAN M , TANDON SANJEEV , IYER R SURYANARAYANAN
发明人： WANG YAXIN , MAEDA YUJI , MELE THOMAS C , SEUTTER SEAN M , TANDON SANJEEV , IYER R SURYANARAYANAN
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film (434) on a substrate (122) includes flowing a nitrogen and carbon containing chemical into a deposition chamber (100), flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber (100), and heating the substrate (122) disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3-N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，在衬底（122）上沉积含硅材料膜（434）的方法包括使含氮和碳的化学品流入沉积室（100），使含硅的源化学品流过硅 - 氮键进入处理室（100），并且将设置在室中的基板（122）加热至低于约550℃的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

3. 发明专利

AU7575598A Low resistivity w using b₂h₆ 未知
公开(公告)号：AU7575598A
公开(公告)日：1998-12-08
申请号：AU7575598
申请日：1998-05-15
申请人： APPLIED MATERIALS INC
发明人： RAJAGOPALAN RAVI , GHANAYEM STEVE , YAMAZAKI MANABU , OHTSUKA KEIICHI , MAEDA YUJI
IPC分类号： C23C16/08 , C23C16/02 , C23C16/14 , H01L21/28 , H01L21/285 , H01L21/768 , C23C16/06 , B32B15/01
摘要： A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF6 and SiH4 are introduced into a deposition chamber. Next, the flow of WF6 and SiH4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF6 is reintroduced into the chamber along with H2 and B2H6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.

4. 发明专利

DE60022221D1 未知
公开(公告)号：DE60022221D1
公开(公告)日：2005-09-29
申请号：DE60022221
申请日：2000-10-20
申请人： APPLIED MATERIALS INC
发明人： MAEDA YUJI , NAKANISHI KOJI , TOKAI NOBUO , KAWAI ICHIRO
IPC分类号： H01L21/205 , C23C16/458 , C23C16/46 , C23C16/52 , H01L21/00 , H01L21/26 , H01L21/68 , H01L21/687 , C25D21/04 , C07D413/06
摘要： On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

5. 发明专利

DE60022221T2 未知
公开(公告)号：DE60022221T2
公开(公告)日：2006-06-22
申请号：DE60022221
申请日：2000-10-20
申请人： APPLIED MATERIALS INC
发明人： MAEDA YUJI , NAKANISHI KOJI , TOKAI NOBUO , KAWAI ICHIRO
IPC分类号： H01L21/205 , C07D413/06 , C23C16/458 , C23C16/46 , C23C16/52 , C25D21/04 , H01L21/00 , H01L21/26 , H01L21/68 , H01L21/687
摘要： On a wafer holding area 50 on the upper surface of a susceptor 22, a wafer W is supported by a wafer support 54 such that a gap with a predetermined distance is formed between the wafer W and a wafer heating surface 52. A projection 58 that decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surface 52. At this time, the heating condition for the wafer W by the susceptor 22 is adjusted by means of the distances of the gaps at the respective portions of the wafer holding area 50. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

6. 发明专利

JP2000270903A LEG EXERCISING SHOE 失效
公开(公告)号：JP2000270903A
公开(公告)日：2000-10-03
申请号：JP11697799
申请日：1999-03-19
申请人： MAEDA YUJI
发明人： MAEDA YUJI
IPC分类号： A43B7/00 , A43B13/14
摘要： PROBLEM TO BE SOLVED: To provide a leg exercising shoe with which any one can exercise his/her leg safely without noise regardless of age and sex, at any place by providing the bottom of the shoe with a hollow part, which has an opening into which a weight is inserted, and the opening is provided with an adhesive tape. SOLUTION: A rectangular hollow part into which a rectangular weight 2 is inserted is provided at a bottom inside 1 of a shoe. The rectangular hollow part is provided with a rectangular opening 4 into which the rectangular weight 2 is inserted. The rectangular opening 4 is provided with an adhesive tape 5 fixing the rectangular weight 2. To use this shoe, open the adhesive tape 5 attached to the rectangular opening 4, insert the rectangular weight 2 into the rectangular hollow part, close the adhesive tape 5, and wear the shoe. This shoe is similar to an ordinary shoe in appearance, and a person wearing this shoe can exercise his/her legs while walking.

7. 发明专利

JP2004266158A Silicone nitride film, method and device for forming the same and semiconductor element 审中-公开
标题翻译：硅氧烷膜，其形成方法和装置及其半导体元件
公开(公告)号：JP2004266158A
公开(公告)日：2004-09-24
申请号：JP2003056206
申请日：2003-03-03
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： MAEDA YUJI , HIUGA NAOKI
IPC分类号： H01L27/092 , H01L21/318 , H01L21/8238 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a silicon nitride film where WR can be sufficiently reduced, and the sufficient suppression of ion dispersion can be realized and to provide a semiconductor element equipped with it.
SOLUTION: This transistor 11 constituting an LDD C-MOS is configured by forming the gate electrode 12 through a gate insulating film 14 on the surface of a silicon wafer W. A side wall 13 constituted of a silicon nitride film is adhered to the side wall of the gate electrode 12, and an extension area 15 doped with B ion is formed through the gate insulating film 14 at the lower part.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可以充分还原WR的氮化硅膜，并且可以实现充分的离子分散抑制，并提供配备有它的半导体元件。解决方案：构成LDD C-MOS的晶体管11通过在硅晶片W的表面上通过栅极绝缘膜14形成栅极12来构成。将由氮化硅膜构成的侧壁13粘附到在下部通过栅极绝缘膜14形成栅电极12的侧壁和掺杂有B离子的延伸区域15。版权所有（C）2004，JPO＆NCIPI

8. 发明专利

JP2002151488A HEAT CVD DEVICE AND METHOD THEREFOR 失效
公开(公告)号：JP2002151488A
公开(公告)日：2002-05-24
申请号：JP2000332633
申请日：2000-10-31
申请人： APPLIED MATERIALS INC
发明人： NISHISATO HIROSHI , TOKAI NOBUO , MAEDA YUJI
IPC分类号： C23C16/448 , C23C16/46 , C23C16/52 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To accelerate a film formation speed without heating a wafer more than needed. SOLUTION: This heat CVD device 1 is provided with a chamber 2, a heater 4 arranged inside the chamber 2 for mounting the wafer 3, and a shower head 5 arranged above the heater 4 with a clearance for dispersing a gaseous starting material in a space above the wafer 3. Temperature adjusting devices 14, 15 and 16 for adjusting the temperature of the gaseous starting material are provided in piping 9, 10, 11 and 12 for supplying the gaseous starting material to the shower head 5.

9. 发明专利

JP2001126995A SEMICONDUCTOR MANUFACTURING APPARATUS 失效
公开(公告)号：JP2001126995A
公开(公告)日：2001-05-11
申请号：JP30954999
申请日：1999-10-29
申请人： APPLIED MATERIALS INC
发明人： MAEDA YUJI , NAKANISHI TAKAYUKI , TOKAI NOBUO , KAWAI ICHIRO
IPC分类号： H01L21/205 , C23C16/458 , C23C16/46 , C23C16/52 , H01L21/00 , H01L21/26 , H01L21/68 , H01L21/687
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus, using a susceptor which improves the uniformity of the in-plane temperature distribution of a semiconductor wafer (substrate) under treatment. SOLUTION: On a wafer-holding area 50 of the susceptor 22 topside, a wafer W is supported by a wafer support 54 while leaving a clearance of a prescribed length between the wafer W and a wafer-heating surface 52 and a protrusion 58, reducing the clearance from the wafer W, is provided on the wafer-heating surface 52, so that the heating condition from the susceptor 22 to the wafer W is adjusted by the clearance length at each region of the wafer hold area 50. Thus uniformity of the temperature distribution in the wafer W plane and the uniformity of the thickness distribution of a formed film are improved.

10. 发明专利

JP2003142481A METHOD AND DEVICE FOR FORMING NITRIDE FILM 审中-公开
公开(公告)号：JP2003142481A
公开(公告)日：2003-05-16
申请号：JP2001335315
申请日：2001-10-31
申请人： APPLIED MATERIALS INC
发明人： ASECHI MASARU , NISHISATO HIROSHI , MAEDA YUJI
IPC分类号： C23C16/42 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming a nitride film with which uniformity of film thickness can be improved, excellent film formation control can be obtained and a thermal effect on a substrate can be significantly reduced while significantly increasing a film formation speed when a nitride film is formed on a substrate by a CVD method. SOLUTION: This method of forming a nitride film is a thermal CVD method in which a silicon nitride film is formed on a silicon wafer W. First, the silicon wafer W is placed on a susceptor 5 in a chamber 2 with predetermined pressure therein. Then, an ammonia gas and a disilane gas are supplied from a gas supply unit 30 into the chamber 2 at a predetermined flow rate, changing the pressure in the chamber 2 to 10-70 kPa. The silicon wafer W is heated by a heater 51 to form the silicon nitride film on the silicon wafer W.

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