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1. 发明申请

WO2004106584B1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
标题翻译：用于生成半导体加工系统的前驱体的方法和装置
公开(公告)号：WO2004106584B1
公开(公告)日：2005-02-17
申请号：PCT/US2004016715
申请日：2004-05-27
申请人： APPLIED MATERIALS INC , CHEN LING , KU VINCENT W , CHUNG HUA , MARCADAL CHRISTOPHE , GANGULI SESHADRI , LIN JENNY , WU DIEN-YEH , OUYE ALAN , CHANG MEI
发明人： CHEN LING , KU VINCENT W , CHUNG HUA , MARCADAL CHRISTOPHE , GANGULI SESHADRI , LIN JENNY , WU DIEN-YEH , OUYE ALAN , CHANG MEI
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/34 , C23C16/4481 , C23C16/4487 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

2. 发明专利

JP2002053964A HEAD FOR VAPORIZING VARIOUS PRECURSORS IN CHEMICAL VAPOR PHASE DEPOSITION, AND ALLOWING THE PRECURSORS TO FLOW ON SEMICONDUCTOR WAFER 审中-公开
公开(公告)号：JP2002053964A
公开(公告)日：2002-02-19
申请号：JP2001219405
申请日：2001-07-19
申请人： APPLIED MATERIALS INC
发明人： KU VINCENT W , MIN SHI , YUAN XIAOXIONG , CHANG ANZHONG , NGUYEN ANH N
IPC分类号： C23C16/448 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a vaporizer head for allowing the vaporized precursor compound for depositing a metal and other layers on a semiconductor to uniformly flow to a treatment chamber under a low pressure. SOLUTION: This vaporizer head has a valve-like body having the axis 20, a long cavity 22 and an input end and an output end. The cavity 22 has an opening 24 for receiving the flow of the precursor compound 46. A plurality of passages 30 and 34 for the flow of the vapor phase through the head 12 are provided. The passages 30 and 34 are extended in a radial direction around a wheel in a spoke shape along the cavity at angles 60, 62 and 64 inclined to the axis from the cavity 22 to a tapered output surface 32 of the head 12. The cavity 22 has a well-shaped bottom part 26 which traps liquid droplets or particles of the precursor compound, and prevents the liquid droplets or the particles other than the vapor phase from being separated away from the head. A plurality of passages have a sufficiently large diameter so that only the low pressure drop is present in the vapor phase flowing through the head.

3. 发明专利

JP2004131845A Method and apparatus for monitoring solid precursor delivery 有权
标题翻译：用于监测固体前驱体输送的方法和装置
公开(公告)号：JP2004131845A
公开(公告)日：2004-04-30
申请号：JP2003277822
申请日：2003-07-22
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： GANGULI SESHADRI , KU VINCENT W , CHUNG HUA , CHEN LING
IPC分类号： C23C16/448 , C23C16/52
CPC分类号： C23C16/52 , C23C16/4481
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for monitoring solid precursor delivery from a vessel to a process chamber by process gas produced by flowing a carrier gas into the vessel.
SOLUTION: A precursor typically changes state from a solid to a gas (vapor) through a sublimation process in a chamber. An apparatus includes a gas analyzer to generate a first signal indicative of the density of the process gas and the precursor in a control device. The control device can calculate the quantity of the precursor remaining in the vessel based on the total amount consumed and the initial amount. The amount of the precursor remaining in the vessel can be used by an operator so as to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于通过将载气流入容器而产生的工艺气体来监测从容器到处理室的固体前体输送的方法和装置。解决方案：前体通常通过室中的升华过程将状态从固体改变为气体（蒸气）。一种装置包括气体分析器，用于产生指示处理气体和前驱体在控制装置中的密度的第一信号。控制装置可以基于消耗的总量和初始量来计算残留在容器中的前体的量。操作人员可以使用容器中剩余的前体的量，以有效地安排前体的更换或补充，以尽量减少材料浪费和处理停机时间。版权所有（C）2004，JPO

4. 发明专利

JP2011176369A Method and apparatus for generating precursor for semiconductor processing system 有权
标题翻译：用于生成半导体加工系统前驱体的方法和装置
公开(公告)号：JP2011176369A
公开(公告)日：2011-09-08
申请号：JP2011125256
申请日：2011-06-03
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHEN LING , KU VINCENT W , CHUNG HUA , MARCADAL CHRISTOPHE , GANGULI SESHADRI , LIN JENNY , WU DIEN-YEH , OUYE ALAN , CHANG MEI
IPC分类号： H01L21/285 , C23C16/448 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for generating a precursor for a semiconductor processing system (320).
SOLUTION: This apparatus includes a canister (300) having sidewalls (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also a method of forming a barrier layer from purified pentakis(dimethylamido)tantalum, for example, a tantalum nitride barrier layer by atomic layer deposition is claimed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种用于生成半导体处理系统的前体的装置（320）。解决方案：该设备包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求从纯化的五（二甲基氨基）钽形成阻挡层的方法，例如通过原子层沉积形成氮化钽阻挡层。版权所有（C）2011，JPO＆INPIT

5. 发明申请

WO2004007793A3 METHOD AND APPARATUS FOR PROVIDING GAS TO A PROCESSING CHAMBER 审中-公开
标题翻译：用于向处理室提供气体的方法和设备
公开(公告)号：WO2004007793A3
公开(公告)日：2004-05-27
申请号：PCT/US0322186
申请日：2003-07-16
申请人： APPLIED MATERIALS INC
发明人： GANGULI SESHADRI , CHEN LING , KU VINCENT W
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/31 , B01D7/00 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a canister having at least one baffle disposed between two ports and containing a precursor material. The precursor material is adapted to produce a gas vapor when heated to a defined temperature at a defined pressure. The baffle forces a carrier gas to travel an extended mean path between the inlet and outlet ports. In another embodiment, an apparatus for generating gas includes a canister having a tube that directs a carrier gas flowing into the canister away from a precursor material disposed within the canister.
摘要翻译：提供了一种用于为处理系统产生气体的方法和装置。在一个实施例中，用于为处理系统产生气体的装置包括罐，所述罐具有设置在两个端口之间并包含前体材料的至少一个挡板。当在限定的压力下加热到限定的温度时，前体材料适于产生气体蒸汽。挡板迫使载气在入口和出口之间延伸平均路径。在另一个实施例中，用于产生气体的装置包括具有管的罐，该管将流入罐中的载气引导离开布置在罐内的前体材料。

6. 发明申请

WO2004007792A3 METHOD OF FILM DEPOSITION USING ACTIVATED PRECURSOR GASES 审中-公开
标题翻译：使用激活前驱气体的膜沉积方法
公开(公告)号：WO2004007792A3
公开(公告)日：2004-04-29
申请号：PCT/US0319706
申请日：2003-06-23
申请人： APPLIED MATERIALS INC
发明人： CHUNG HUA , KU VINCENT W , CHEN LING
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45525 , C23C16/34 , C23C16/4488 , C23C16/452
摘要： A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
摘要翻译：提供了一种在基板上沉积膜的方法。在一个方面，所述方法包括向活化区提供含金属的前体，以及活化含金属的前体以形成活化的前体。活化的前体气体被输送到反应室，并且使用循环沉积方法将膜沉积在基板上，其中活化的前体气体和还原气体交替地吸附在基板上。还提供了使用活化的还原气体将膜沉积在基板上的方法。

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