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1. 发明申请

WO2009108568A3 GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER 审中-公开
标题翻译：气体流量均衡器板适用于基板处理室
公开(公告)号：WO2009108568A3
公开(公告)日：2009-11-05
申请号：PCT/US2009034533
申请日：2009-02-19
申请人： APPLIED MATERIALS INC , BALAKRISHNA AJIT , RAUF SHAHID , NGUYEN ANDREW , WILLWERTH MICHAEL D , TODOROW VALENTIN D
发明人： BALAKRISHNA AJIT , RAUF SHAHID , NGUYEN ANDREW , WILLWERTH MICHAEL D , TODOROW VALENTIN D
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：流量均衡板设置用于在基板处理室中使用。流量均衡板具有环形形状，其具有阻碍内部区域的流动和允许处理气体通过但保留处理气体中的特定元素（例如活性自由基或离子）的穿孔外部区域。内部区域和外部区域具有不同的径向宽度，从而平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡板可用于校正由于排气口相对于处理空间和排气口之间的基板支撑件的中心线的横向偏移而引起的室流量不对称。

2. 发明申请

WO2010014433A3 FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR 审中-公开
标题翻译：现场增强电感耦合等离子体（FE-ICP）反应器
公开(公告)号：WO2010014433A3
公开(公告)日：2010-04-15
申请号：PCT/US2009050916
申请日：2009-07-17
申请人： APPLIED MATERIALS INC , TODOROW VALENTIN N , BANNA SAMER , RAMASWAMY KARTIK , WILLWERTH MICHAEL D
发明人： TODOROW VALENTIN N , BANNA SAMER , RAMASWAMY KARTIK , WILLWERTH MICHAEL D
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly,
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强感应耦合等离子体处理系统可包括具有电介质盖和设置在电介质盖上方的等离子体源组件的处理室。等离子体源组件包括一个或多个线圈，其配置成将RF能量感应耦合到处理室中以在其中形成和维持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，其中，或多个电极电耦合到所述一个或多个线圈中的一个，以及耦合到所述一个或多个感应线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在电介质盖和等离子体源组件之间，

3. 发明申请

WO2010059357A3 EXTENDED CHAMBER LINER FOR IMPROVED MEAN TIME BETWEEN CLEANINGS OF PROCESS CHAMBERS 审中-公开
标题翻译：用于改进过程池清洁之间的平均时间的扩展室内衬
公开(公告)号：WO2010059357A3
公开(公告)日：2010-07-15
申请号：PCT/US2009062482
申请日：2009-10-29
申请人： APPLIED MATERIALS INC , NGUYEN HOAN HAI , WILLWERTH MICHAEL D
发明人： NGUYEN HOAN HAI , WILLWERTH MICHAEL D
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01J37/32495 , H01J37/32623
摘要： Embodiments of liners for semiconductor process chambers are provided herein. In some embodiments, a liner for a semiconductor process chamber includes a first portion configured to line at least a portion of an inner volume of the semiconductor process chamber and a second portion configured to line at least a portion of a pump port of the semiconductor process chamber. In some embodiments, the first portion and the second portion are coupled together. In some embodiments, the first portion and the second portion of the liner may be fabricated a single piece. In some embodiments, the liner may be disposed in a process chamber having an inner volume and a pump port fluidly coupled to the inner volume.
摘要翻译：本文提供了用于半导体处理室的衬垫的实施例。在一些实施例中，用于半导体处理室的衬垫包括构造成对半导体处理室的内部体积的至少一部分进行排列的第一部分和被配置为将半导体工艺的泵口的至少一部分排列的第二部分室。在一些实施例中，第一部分和第二部分耦合在一起。在一些实施例中，衬垫的第一部分和第二部分可以制成单件。在一些实施例中，衬套可以设置在具有内部容积的处理室和与内部容积流体耦合的泵口。

4. 发明申请

WO2009117612A3 SHIELDED LID HEATER ASSEMBLY 审中-公开
标题翻译：屏蔽式加热器总成
公开(公告)号：WO2009117612A3
公开(公告)日：2009-12-10
申请号：PCT/US2009037722
申请日：2009-03-19
申请人： APPLIED MATERIALS INC , WILLWERTH MICHAEL D , PALAGASHVILI DAVID , TODOROW VALENTIN N , YUEN STEPHEN
发明人： WILLWERTH MICHAEL D , PALAGASHVILI DAVID , TODOROW VALENTIN N , YUEN STEPHEN
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.
摘要翻译：提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。在一个实施例中，提供了一种屏蔽盖加热器，其包括铝基座和夹持加热器元件的RF屏蔽。

5. 发明申请

WO2012015931A3 APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER 审中-公开
标题翻译：用于控制处理室中的气体流动的装置
公开(公告)号：WO2012015931A3
公开(公告)日：2012-05-10
申请号：PCT/US2011045550
申请日：2011-07-27
申请人： APPLIED MATERIALS INC , PALAGASHVILI DAVID , WILLWERTH MICHAEL D , LIU JINGBAO
发明人： PALAGASHVILI DAVID , WILLWERTH MICHAEL D , LIU JINGBAO
IPC分类号： H01L21/683 , H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/68735 , C23C16/4412 , C23C16/45591 , C23C16/4585 , H01J37/3244 , H01J37/32633 , H01J37/32642 , Y10T137/85938
摘要： Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume.
摘要翻译：这里提供了用于控制处理室中的气体流动的装置。在一些实施例中，用于控制处理室中的气体流动的设备，该处理室具有设置在衬底支撑件上方的处理室内的处理容积以及设置在衬底支撑件下方的处理室内的泵送容积，该设备可以包括围绕基板支撑件，所述基板支撑件邻近所述基板支撑件的基板支撑表面的水平面，其中所述环形板朝向所述处理腔室的内周边表面径向向外延伸，以在所述环形板的外边缘与所述内周边表面之间限定均匀间隙，其中均匀间隙提供从处理容积到泵送容积的均匀流动路径。

6. 发明申请

WO2005064650A3 METHOD AND APPARATUS FOR PERFORMING A LIMITED AREA SPECTRAL ANALYSIS 审中-公开
标题翻译：用于执行有限区域光谱分析的方法和装置
公开(公告)号：WO2005064650A3
公开(公告)日：2005-08-25
申请号：PCT/US2004043444
申请日：2004-12-23
申请人： APPLIED MATERIALS INC , DAVIS MATTHEW F , UO YASUHIRO , NETCHITALIOUK ANDREI IVANOVICH , LIAN LEI , WILLWERTH MICHAEL D
发明人： UO YASUHIRO , NETCHITALIOUK ANDREI IVANOVICH , LIAN LEI , WILLWERTH MICHAEL D
IPC分类号： H01J37/32 , H01L21/00 , H01L21/66
CPC分类号： H01J37/32935 , G01N21/8851 , G01N21/9501 , H01L21/67248 , H01L21/67253 , H01L22/26
摘要： A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.
摘要翻译：提供了一种用于在半导体衬底处理室中获得衬底原位数据的方法和装置。该装置包括用于获取关于衬底的数据的光学组件和适于相对于衬底在两个维度上横向移动光学组件的致动器组件。

7. 发明申请

WO2011062900A2 SHOWERHEAD ASSEMBLY WITH IMPROVED IMPACT PROTECTION 审中-公开
标题翻译：具有改进冲击保护的喷头组件
公开(公告)号：WO2011062900A2
公开(公告)日：2011-05-26
申请号：PCT/US2010056840
申请日：2010-11-16
申请人： APPLIED MATERIALS INC , ERENSTEIN ALEX , WILLWERTH MICHAEL D , PALAGASHVILI DAVID
发明人： ERENSTEIN ALEX , WILLWERTH MICHAEL D , PALAGASHVILI DAVID
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32495
摘要： Showerhead assemblies with improved impact protection are provided herein. In some embodiments, a showerhead assembly includes a body having a plenum disposed therein, the body having a plurality of first holes extending from the plenum to a substrate facing surface of the body; a plate disposed on the substrate facing surface of the body and having a plurality of second holes formed therethrough, each second hole corresponding with a respective first hole of the body; and a lip extending from the body and circumscribing the plate, the lip extending beyond a chamber facing surface of the plate. In some embodiments, the showerhead assembly is disposed in the inner volume of a process chamber.
摘要翻译：这里提供了具有改进的冲击保护的喷头组件。在一些实施例中，喷头组件包括具有布置在其中的充气室的主体，主体具有从充气室延伸到主体的面向基板的表面的多个第一孔; 板，所述板布置在所述主体的面向基板的表面上并且具有穿过其形成的多个第二孔，每个第二孔与所述主体的相应的第一孔对应; 以及从所述主体延伸并限定所述板的唇缘，所述唇缘延伸超过所述板的面向腔室的表面。在一些实施例中，喷头组件设置在处理室的内部容积中。

8. 发明申请

WO2011063084A3 ELECTROSTATIC CHUCK WITH REDUCED ARCING 审中-公开
标题翻译：静电夹具减少弧线
公开(公告)号：WO2011063084A3
公开(公告)日：2011-11-17
申请号：PCT/US2010057170
申请日：2010-11-18
申请人： APPLIED MATERIALS INC , WILLWERTH MICHAEL D , PALAGASHVILI DAVID , BUCHBERGER JR DOUGLAS A , CHAFIN MICHAEL G
发明人： WILLWERTH MICHAEL D , PALAGASHVILI DAVID , BUCHBERGER JR DOUGLAS A , CHAFIN MICHAEL G
IPC分类号： H01L21/687 , B23Q3/15 , H02N13/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译：本文提供了静电卡盘的实施例。在一些实施例中，静电卡盘可以包括具有凹口上部周边边缘的主体，该边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯式第二表面限定，并且多个孔布置通过身体沿着第一面; 多个紧固件，穿过所述多个孔设置以将所述主体联接到设置在所述主体下方的基座; 电介质构件，所述电介质构件设置在所述主体上表面上方以静电地保持基板; 绝缘体环，所述绝缘体环围绕所述主体设置在所述带凹口的上外围边缘内并且具有与所述台阶式第二表面配合以在其间限定非线性界面的阶梯式内侧壁; 以及设置在绝缘环上的边缘环，非线性接口限制边缘环和紧固件之间的电弧。

9. 发明申请

WO2011059891A3 CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION 审中-公开
标题翻译：具有均匀流动和等离子体分布的室
公开(公告)号：WO2011059891A3
公开(公告)日：2011-08-18
申请号：PCT/US2010055617
申请日：2010-11-05
申请人： APPLIED MATERIALS INC , PALAGASHVILI DAVID , WILLWERTH MICHAEL D , ERENSTEIN ALEX , LIU JINGBAO
发明人： PALAGASHVILI DAVID , WILLWERTH MICHAEL D , ERENSTEIN ALEX , LIU JINGBAO
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32816 , H01J37/32844
摘要： Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.
摘要翻译：本发明的实施例提供一种递归衬里系统，其有助于提供更接近布置在用于处理衬底（例如，处理室）的装置内的衬底表面的更均匀的气体流动。在一些实施例中，递归衬管系统可以包括外衬套，该外衬套具有被配置为对处理室的壁进行划线的外部部分，从外部部分向内延伸的底部部分以及从底部部分向上延伸的唇部以限定井 ; 以及具有下部的内衬，所述下部构造成至少部分地设置在所述井中，以与所述外衬一起限定其间的递归流动路径。

10. 发明申请

WO2010030529A3 LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于等离子体处理室的低倾斜边缘环
公开(公告)号：WO2010030529A3
公开(公告)日：2010-06-10
申请号：PCT/US2009055596
申请日：2009-09-01
申请人： APPLIED MATERIALS INC , LEE CHANGHUN , WILLWERTH MICHAEL D , NGUYEN HOAN
发明人： LEE CHANGHUN , WILLWERTH MICHAEL D , NGUYEN HOAN
IPC分类号： H05H1/34 , H01L21/3065 , H05H1/38
CPC分类号： H01L21/67069 , H01J37/32623 , H01J37/32642 , H01L21/68735 , H01L21/68757
摘要： Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees.
摘要翻译：提供了用于等离子体处理室中的盖环的实施例。在一个实施例中，用于等离子体处理室中的盖环包括由含钇（Y）材料制成的环形主体。主体包括具有内部定位环和外部定位环的底部表面。内定位环比外定位环更远离主体地延伸。该主体包括内径壁，该内径壁具有由大致水平的陆地分开的主壁和次壁。本体还包括具有在顶点处与内倾斜表面相交的外倾斜顶表面的顶表面。内倾斜表面限定与垂直于本体的中心线的线成小于约70度的角度。

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