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1. 发明专利

SG87187A1 PVD-IMP TUNGSTEN AND TUNGSTEN NITRIDE AS A LINER, BARRIER AND/OR SEED LAYER FOR TUNGSTEN, ALUMINIUM AND COPPER APPLICATIONS 未知
公开(公告)号：SG87187A1
公开(公告)日：2002-03-19
申请号：SG200005976
申请日：2000-10-17
申请人： APPLIED MATERIALS INC
发明人： VIKASH BANTHIA , BARRY CHIN , S BRAD HUNTER , BERTHA P CHANG , PEIJUN DING , PAUL KITABJIAN , NIRMALYA MAITY , DINESH SAIGAL , ZHENG XU , ALFRED MAK , GONGDA YAO
IPC分类号： C23C14/34 , C23C14/16 , C23C14/35 , C23C16/14 , H01L21/28 , H01L21/283 , H01L21/285 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52 , C23C14/22
摘要： The disclosure relates to a method of depositing a tungsten-based liner/barrier layer on a substrate (40), preferably using a high-density plasma PVD process, such as an ionized metal plasma (IMP) process or other processes with ionize a sputtered flux of material from a target. If a Ti and/or TiN liner/barrier layer (54) is deposited, the method reduces or eliminates the reactions between WF6 and the Ti, TiN, and Si materials by depositing tungsten by PVD-IMP processing thereover. Tungsten may also be deposited in the presence of a nitrogen source to produce a tungsten nitride liner/barrier layer (52). The tungsten liner/barrier layer may be followed by another tungsten layer deposited by a CVD process. The tungsten and other materials can also be deposited by other processes such as electroplating processes and other types of PVD including non-ionized sputtering, collimated sputtering, and long throw sputtering.

2. 发明申请

US20190382895A1 BLOCKER PLATE FOR USE IN A SUBSTRATE PROCESS CHAMBER 审中-公开
公开(公告)号：US20190382895A1
公开(公告)日：2019-12-19
申请号：US16520646
申请日：2019-07-24
申请人： APPLIED MATERIALS, INC.
发明人： XIAOXIONG YUAN , YU LEI , YI XU , KAZUYA DAITO , PINGYAN LEI , DIEN-YEH WU , UMESH M. KELKAR , VIKASH BANTHIA
IPC分类号： C23C16/455
摘要： Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

3. 发明申请

US20180347043A1 BLOCKER PLATE FOR USE IN A SUBSTRATE PROCESS CHAMBER 审中-公开
公开(公告)号：US20180347043A1
公开(公告)日：2018-12-06
申请号：US15663734
申请日：2017-07-29
申请人： APPLIED MATERIALS, INC.
发明人： XIAOXIONG YUAN , YU LEI , YI XU , KAZUYA DAITO , PINGYAN LEI , DIEN-YEH WU , UMESH M. KELKAR , VIKASH BANTHIA
IPC分类号： C23C16/455
CPC分类号： C23C16/45544 , C23C16/45508 , C23C16/45536 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/45574 , H01L21/67017
摘要： Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

4. 发明申请

US20160300731A1 METHODS OF ETCHBACK PROFILE TUNING 审中-公开
标题翻译：蚀刻轮廓调谐方法
公开(公告)号：US20160300731A1
公开(公告)日：2016-10-13
申请号：US15091951
申请日：2016-04-06
申请人： APPLIED MATERIALS, INC.
发明人： KAI WU , VIKASH BANTHIA
IPC分类号： H01L21/3213 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/32136 , H01L21/28556 , H01L21/76877
摘要： A method of controlling an etch profile includes introducing a tungsten containing gas into a processing chamber; depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; and treating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film.
摘要翻译：控制蚀刻轮廓的方法包括将含钨气体引入到处理室中; 在处理室中使用含钨气体沉积衬底中形成的特征的第一钨膜; 以及使用含钨气体处理处理室中的第一钨膜，直到通过在第一间隔刻蚀第一钨膜之间重复交替进行特定蚀刻轮廓，并且通过在第二间隔处停止第一钨膜的蚀刻而停止第二间隔的蚀刻从处理室清除含钨气体的至少一个，或者关闭对第一钨膜的蚀刻提供动力的电源。

5. 发明申请

US20190229007A1 PROCESS KIT FOR A SUBSTRATE SUPPORT 审中-公开
公开(公告)号：US20190229007A1
公开(公告)日：2019-07-25
申请号：US16249716
申请日：2019-01-16
申请人： APPLIED MATERIALS, INC.
发明人： MUHANNAD MUSTAFA , MUHAMMAD M. RASHEED , YU LEI , AVGERINOS V. GELATOS , VIKASH BANTHIA , VICTOR H. CALDERON , SHI WEI TOH , YUNG-HSIN LEE , ANINDITA SEN
IPC分类号： H01L21/687 , H01J37/32
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, a process kit for a substrate support includes: an upper edge ring made of quartz and having an upper surface and a lower surface, wherein the upper surface is substantially planar and the lower surface includes a stepped lower surface to define a radially outermost portion and a radially innermost portion of the upper edge ring.

6. 发明申请

US20190157102A1 METHODS OF REDUCING OR ELIMINATING DEFECTS IN TUNGSTEN FILM 审中-公开
公开(公告)号：US20190157102A1
公开(公告)日：2019-05-23
申请号：US16196056
申请日：2018-11-20
申请人： APPLIED MATERIALS, INC.
发明人： GUOQIANG JIAN , WEI TANG , CHI-CHOU LIN , PAUL F. MA , KAI WU , VIKASH BANTHIA , MEI CHANG , JIA YE , WENYU ZHANG , JING ZHOU
IPC分类号： H01L21/321 , H01L21/768 , H01L21/285
摘要： Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.

7. 发明申请

US20170148670A1 METHODS FOR FORMING LOW-RESISTANCE CONTACTS THROUGH INTEGRATED PROCESS FLOW SYSTEMS 有权
公开(公告)号：US20170148670A1
公开(公告)日：2017-05-25
申请号：US15358690
申请日：2016-11-22
申请人： APPLIED MATERIALS, INC.
发明人： YU LEI , VIKASH BANTHIA , KAI WU , XINYU FU , YI XU , KAZUYA DAITO , FEIYUE MA , PULKIT AGARWAL , CHI-CHOU LIN , DIEN-YEH WU , GUOQIANG JIAN , WEI V. TANG , JONATHAN BAKKE , MEI CHANG , SUNDAR RAMAMURTHY
IPC分类号： H01L21/768 , C23C16/52 , C23C16/455 , C23C16/46 , H01L21/311 , C23C16/44
CPC分类号： H01L21/76843 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/06 , C23C16/08 , C23C16/4401 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/31116 , H01L21/76802 , H01L21/76877
摘要： Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

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