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1. 发明专利

JP2012156522A Dual pyrometer 有权
标题翻译：双色素
公开(公告)号：JP2012156522A
公开(公告)日：2012-08-16
申请号：JP2012055787
申请日：2012-03-13
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： AARON MUIR HUNTER , BALASUBRAMANIAN RAMACHANDRAN , TANASA CORINA ELENA , RAJESH S RAMANUJAM , DIXIT TARPAN T
IPC分类号： H01L21/26
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： PROBLEM TO BE SOLVED: To extend a temperature range of operation of a transmission pyrometer.SOLUTION: A rapid thermal processing (RTP) system 110 includes a transmission pyrometer 12 for monitoring the temperature dependent absorption of a silicon wafer 32 for radiation from a RTP lamp 46 at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized. The transmission pyrometer may be used for closed loop control for thermal treatments below 500°C or used in a pre-heating phase for a higher temperature process including radiation pyrometry in the closed loop control. A pre-heating temperature ramp rate may be controlled by measuring an initial ramp rate and readjusting the lamp power accordingly.
摘要翻译：要解决的问题：扩展变送高温计的工作温度范围。解决方案：快速热处理（RTP）系统110包括透射高温计12，用于在降低的功率水平下监测来自RTP灯46的辐射的硅晶片32的温度依赖性吸收。创建了与晶圆和辐射灯温度相关的光电检测器光电流的非标准化值的查找表。校准步骤测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流被相应地归一化。传输高温计可用于低于500°C的热处理的闭环控制，或用于预热阶段，用于较高温度的过程，包括闭环控制中的辐射高温测定。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。版权所有（C）2012，JPO＆INPIT

2. 发明申请

WO2006047062A3 METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS 审中-公开
标题翻译：用于热处理硅膜的低温度色谱法的方法和装置
公开(公告)号：WO2006047062A3
公开(公告)日：2007-06-21
申请号：PCT/US2005036082
申请日：2005-10-05
申请人： APPLIED MATERIALS INC , HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
发明人： HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system (110) including a transmission pyrometer (12) monitoring the temperature dependent absorption of the silicon wafer (32) for radiation from the RTP lamps (46) at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step (170) measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized (142). The transmission pyrometer may be used for closed loop control for thermal treatments below 500°C or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure (190) with a beam splitter (204) dividing radiation from the wafer.
摘要翻译：包括透射高温计（12）的快速热处理（RTP）系统（110），其以降低的功率水平监测用于来自RTP灯（46）的辐射的硅晶片（32）的温度依赖性吸收。创建了一个查找表，其涉及具有晶圆和辐射灯温度的光电检测器光电流的非标准化值。校准步骤（170）测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化（142）。传输高温计可用于低于500°C的热处理的闭环控制，或者在预热阶段用于更高温度的过程，包括闭环控制中的辐射高温计。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。辐射和透射高温计可以被包括在分束器（204）的整体结构（190）中，分束器（204）分隔来自晶片的辐射。

3. 发明公开

EP1809111A4 METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS 审中-公开
标题翻译：对涉及硅的热处理LOW高温测定的方法和装置切片适合...
公开(公告)号：EP1809111A4
公开(公告)日：2010-12-08
申请号：EP05814904
申请日：2005-10-05
申请人： APPLIED MATERIALS INC
发明人： HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
IPC分类号： F27D11/00 , G06F19/00 , H01L21/205 , H05B3/68
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68

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