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1. 发明专利

JPH06306615A IMPROVED CHEMICAL GAS PHASE VAPOR DEPOSITING CHAMBER 失效
公开(公告)号：JPH06306615A
公开(公告)日：1994-11-01
申请号：JP6747494
申请日：1994-04-05
申请人： APPLIED MATERIALS INC
发明人： LEI LAWRENCE CHUNG-LAI , PERLOV ILYA , LITTAU KARL ANTHONY , MORRISON ALAN FERRIS , CHANG MEI , SINHA ASHOK K
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687

2. 发明专利

DE69411307T2 未知
公开(公告)号：DE69411307T2
公开(公告)日：1999-04-15
申请号：DE69411307
申请日：1994-03-31
申请人： APPLIED MATERIALS INC
发明人： LEI LAWRENCE CHUNG-LAI , PERLOV ILYA , LITTAU KARL ANTHONY , MORRISON ALAN FERRIS , CHANG MEI , SINHA ASHOK K
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate (14). The chamber susceptor mount (210) for the substrate (14) is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount (210) for a substrate (14). A purge gas line (222) is connected to openings in the susceptor outside of the periphery of the substrate (14) to prevent edge and backside contamination of the substrate (14). A vacuum feed line mounts the substrate to the susceptor (210) during processing. A refractory purge guide (226), or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer (14) and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

3. 发明专利

DE69411307D1 未知
公开(公告)号：DE69411307D1
公开(公告)日：1998-08-06
申请号：DE69411307
申请日：1994-03-31
申请人： APPLIED MATERIALS INC
发明人： LEI LAWRENCE CHUNG-LAI , PERLOV ILYA , LITTAU KARL ANTHONY , MORRISON ALAN FERRIS , CHANG MEI , SINHA ASHOK K
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate (14). The chamber susceptor mount (210) for the substrate (14) is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount (210) for a substrate (14). A purge gas line (222) is connected to openings in the susceptor outside of the periphery of the substrate (14) to prevent edge and backside contamination of the substrate (14). A vacuum feed line mounts the substrate to the susceptor (210) during processing. A refractory purge guide (226), or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer (14) and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

4. 发明专利

AU8384498A Method for improved cleaning of substrate processing systems 未知
公开(公告)号：AU8384498A
公开(公告)日：1999-02-08
申请号：AU8384498
申请日：1998-07-10
申请人： APPLIED MATERIALS INC
发明人： KAO CHIEN-TEH , LITTAU KARL ANTHONY , VASUDEV ANAND , KOO DONG WON
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , C23C16/511 , C23C16/52 , H01J9/38 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/00
摘要： A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas source into a processing chamber where microwaves ignite and maintain a plasma from the reactive gas. Reactive radicals generated which react with residues on the interior surfaces of the processing chamber. In the second stage, an inert gas is flowed into the processing chamber in addition to the reactive gas. Microwaves then ignite and maintain a plasma from the reactive gas and optionally, the inert gas as well. Optionally, an inert gas can be flowed into the processing chamber prior to the first stage to remove loose particles from the processing chamber. The reactive gas in such embodiments is preferably NF3, but other fluorine-containing gases such as carbon tetrafluoride (CF4) or sulfur hexafluoride (SF6) may also be used. Moreover, chlorine- or other halogen-containing gases may also be used as the reactive gas in other embodiments in place of fluorine-containing gases.

5. 发明公开

EP0995342A4 METHOD FOR IMPROVED CLEANING OF SUBSTRATE PROCESSING SYSTEMS 失效
标题翻译： VERFAHREN ZUR REINIGUNG VON基板 - BEHANDLUNGSSYSTEMEN
公开(公告)号：EP0995342A4
公开(公告)日：2004-04-28
申请号：EP98934283
申请日：1998-07-10
申请人： APPLIED MATERIALS INC
发明人： KAO CHIEN-TEH , LITTAU KARL ANTHONY , VASUDEV ANAND , KOO DONG WON
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , C23C16/511 , C23C16/52 , H01J9/38 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/00
CPC分类号： H01J37/32862 , C23C16/511 , C23C16/52 , H01J9/38 , H01J37/32192 , H01J37/32357 , Y10S156/916 , Y10S438/905
摘要： A method for a multiple-stage microwave plasma cleaning technique for efficiently cleaning a substrate processing chamber. In a specific embodiment, a two-stage cleaning process is described. The first stage begins by flowing a reactive gas from a gas source (7) into a processing chamber (15) where microwaves ignite and maintain a plasma from the reactive gas. Reactive radicals generated which react with residues on the interior surfaces of the processing chamber. In the second stage, an inert gas is flowed into the processing chamber in addition to the reactive gas. Microwaves then ignite and maintain a plasma from the reactive gas and optionally, the inert gas as well. Optionally, an inert gas can be flowed into the processing chamber prior to the first stage to remove loose particles from the processing chamber. The reactive gas in such embodiments is preferably NF3, but other fluorine-containing gases such as carbon tetrafluoride (CF4) or sulfurhexafluoride (SF6) may also be used. Moreover, chlorine- or other halogen-containing gases may also be used as the reactive gas in other embodiments in place of fluorine-containing gases.
摘要翻译：一种用于高效清洗基板处理室的多级微波等离子体清洗技术的方法。在具体实施例中，描述了两阶段清洁过程。第一阶段是将来自气源的反应性气体流入处理室，其中微波点燃并维持来自反应气体的等离子体。所产生的反应性基团与处理室内表面上的残留物反应。在第二阶段中，除了反应气体之外，惰性气体也流入处理室。微波然后点燃和维持来自反应性气体的等离子体以及任选的惰性气体。任选地，惰性气体可以在第一阶段之前流入处理室以从处理室中除去松散的颗粒。这些实施方案中的反应气体优选为NF 3，但也可以使用其它含氟气体，例如四氟化碳（CF 4）或六氟化硫（SF 6）。此外，在其他实施方案中，也可以使用氯或其它含卤素的气体作为反应气体来代替含氟气体。

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