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1. 发明专利

JP2001297991A HEATER FOR PROCESSING CHAMBER 失效
公开(公告)号：JP2001297991A
公开(公告)日：2001-10-26
申请号：JP2001046653
申请日：2001-02-22
申请人： APPLIED MATERIALS INC
发明人： SHERSTINSKY SEMYON , GILLIAM ALISON , SMITH PAUL F , ZUNIGA LEONEL A , YOSHIDOME TED , KHURANA NITIN , MOSELY RODERICK CRAIG , KELKAR UMESH , YUDOVSKY JOSEPH , POPIOLKOWSKI ALAN
IPC分类号： C23C16/455 , H01J37/32 , H01L21/02 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a gas delivery device, which can direct a gas to the edge of a substrate at an angle in the radial direction of the substrate, and to provide a method for directing the gas to the edge of the substrate at the angle in the radial direction of the substrate. SOLUTION: A gas delivery device directs gas from a gas opening over a plurality of grooves that are angled relative to a radial line originating at the center of the gas delivery device. Subsequently, the gas is directed over a part of a substrate 36 to prevent reactive gas from depositing on selected parts of the substrate.

2. 发明专利

JP2007146294A Target for sputtering chamber and process kit component 有权
标题翻译：喷射室和工艺套件组件的目标
公开(公告)号：JP2007146294A
公开(公告)日：2007-06-14
申请号：JP2006314614
申请日：2006-11-21
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RITCHIE ALAN ALEXANDER , DONNY YOUNG , HONG ILYOUNG RICHARD , SCHEIBLE KATHLEEN A , KELKAR UMESH
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/32477 , H01J37/34 , H01J37/3408 , H01J37/3423 , H01J37/3426 , H01J37/3435 , H01J37/3497
摘要： PROBLEM TO BE SOLVED: To provide a target for a sputtering chamber. SOLUTION: The sputtering chamber has a sputtering target 136 comprising a backing plate 141 having thermal conductivity of at least about 200 W/mK and electric resistivity of about 2-5 μΩcm and a sputtering plate 137. The backing plate 141 has a groove. The sputtering plate 137 comprises a cylindrical mesa having a plane, and an inclined annular rim surrounding the cylindrical mesa. In one version, the backing plate is constituted of a material having a high thermal conductivity and a low electric resistivity. In another version, the backing plate includes a back face having a single groove or a plurality of grooves. A process kit for the sputtering chamber is equipped with a deposition ring and a cover ring for placement about a substrate support in the sputtering chamber, and a shield assembly. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供溅射室的靶。解决方案：溅射室具有溅射靶136，溅射靶136包括热导率为至少约200W / mK，电阻率为约2-5μΩcm的背板141和溅射板137。背板141具有槽。溅射板137包括具有平面的圆柱形台面和围绕圆柱形台面的倾斜环形边缘。在一个版本中，背板由具有高导热性和低电阻率的材料构成。在另一种形式中，背板包括具有单个凹槽或多个凹槽的背面。用于溅射室的处理套件配备有沉积环和用于放置在溅射室中的衬底支撑件周围的覆盖环以及屏蔽组件。版权所有（C）2007，JPO＆INPIT

3. 发明申请

WO0237528A3 MAGNETRON WITH A ROTATING CENTER MAGNET FOR A VAULT SHAPED SPUTTERING TARGET 审中-公开
标题翻译：具有旋转中心磁铁的MAGNETRON用于歪曲形状的飞溅目标
公开(公告)号：WO0237528A3
公开(公告)日：2003-04-24
申请号：PCT/US0145534
申请日：2001-10-31
申请人： APPLIED MATERIALS INC
发明人： SUBRAMANI ANANTHA , KELKAR UMESH , FU JIANMING , GOPALRAJA PRABURAM
IPC分类号： H05H1/46 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3423 , H01J37/3405 , H01J37/3455
摘要： A plasma sputter reactor including a target with an annular vault formed in a surface facing the wafer to be sputter coated and having inner and outer sidewalls and a roof thereover. A well is formed at the back of the target between the tubular inner sidewall. A magneton associated with the target includes a stationary annular magnet assembly of one vertical polarity disposed outside of the outer sidewall, a rotatable tubular magnet assembly of the other polarity positioned in the well behind the inner sidewall, and a small unbalanced magnetron rotatable over the roof about the central axis of the target. The lower frame supports the target while the upper frame supports the magnetron, including the magnets adjacent the lower frame. The inner magnet assembly has a cooling water passage passing to the bottom of the inner magnet to inject the cooling water to the bottom of the well. The cooling water is stirred by the rotating roof magnetron and leaves the water bath through inlets formed in the bottom frame but exists from the top frame.
摘要翻译：一种等离子体溅射反应器，其包括具有环形拱顶的靶，该环形拱顶形成在面向待溅射涂层的晶片的表面上，并且具有内壁和外侧壁以及其上方的屋顶。在管状内侧壁之间的靶的后部形成有孔。与靶相关联的磁铁包括设置在外侧壁外侧的一个垂直极性的固定环形磁体组件，位于内侧壁后面的另一极性的可旋转管状磁体组件，以及可在屋顶上方旋转的小型不平衡磁控管关于目标的中心轴。下框架支撑目标，而上框架支撑磁控管，包括与下框架相邻的磁体。内部磁体组件具有通过内部磁体底部的冷却水通道，以将冷却水注入到井的底部。冷却水由旋转屋顶磁控管搅拌，并通过形成在底部框架中的入口离开水浴，但是从顶部框架存在。

4. 发明申请

WO2004100231A2 OBLIQUE ION MILLING OF VIA METALLIZATION 审中-公开
标题翻译：通过金属化的极限离子铣削
公开(公告)号：WO2004100231A2
公开(公告)日：2004-11-18
申请号：PCT/US2004014406
申请日：2004-05-04
申请人： APPLIED MATERIALS INC
发明人： GOPALRAJA PRABURAM , TANG XIANMIN , FU JIANMING , PERRIN MARK A , WANG JEAN YUE PHILLIP , SUNDARRAJAN ARVIND , ZHANG HONG , YU JICK , KELKAR UMESH , XU ZHENG , CHEN FUSEN
IPC分类号： C23C14/04 , C23C14/34 , C23C14/46 , C23C14/58 , H01J37/305 , H01J37/34 , H01L21/285 , H01L21/768 , H01L21/00
CPC分类号： H01J37/34 , C23C14/046 , C23C14/3442 , C23C14/5833 , H01J37/3053 , H01L21/2855 , H01L21/76843 , H01L21/76862 , H01L21/76865
摘要： In conjunction with sputtering a metal, especially copper, into high aspect-ratio holes in a wafer, an oblique ion milling method in which argon ions or other particles having energies in the range of 200 to 1500e V are directed to the wafer at between 10 and 35° to the wafer surface to sputter etch material sputter deposited preferentially on the upper corners of the holes. The milling may be performed in the sputter deposition chamber either simultaneously with the deposition or after it or performed afterwards in a separate milling reactor. A plurality of ion sources arranged around the chamber improve angular uniformity or arranged axially improve radial uniformity or vary the angle of incidence. An annular ion source about the chamber axis allows a plasma current loop. Anode layer ion sources and sources composed of copper are advantageous.
摘要翻译：结合将金属，特别是铜溅射到晶片中的高纵横比孔中，其中具有在200至1500eV范围内的能量的氩离子或其它颗粒的倾斜离子研磨方法在10 并且与晶片表面成35°的溅射蚀刻材料溅射沉积优先在孔的上角上。研磨可以在溅射沉积室中同时进行沉积，或者在沉积之后或之后在单独的研磨反应器中进行。围绕腔室布置的多个离子源提高了角度均匀性或者轴向地改变径向均匀性或改变入射角。围绕腔室轴线的环形离子源允许等离子体电流回路。阳极层离子源和由铜组成的源是有利的。

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