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1. 发明专利

SG183873A1 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 未知
公开(公告)号：SG183873A1
公开(公告)日：2012-10-30
申请号：SG2012065074
申请日：2011-02-10
申请人： APPLIED MATERIALS INC
发明人： LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.

2. 发明专利

SG181670A1 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 未知
公开(公告)号：SG181670A1
公开(公告)日：2012-07-30
申请号：SG2012043477
申请日：2010-12-16
申请人： APPLIED MATERIALS INC
发明人： LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.

3. 发明申请

WO2011109148A3 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A3
公开(公告)日：2012-02-23
申请号：PCT/US2011024378
申请日：2011-02-10
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
发明人： LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

4. 发明公开

EP2036120A4 A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE 审中-公开
标题翻译：新颖沉积等离子AUSHÄRTZYKLUSPROZESS以提高二氧化硅膜的质量
公开(公告)号：EP2036120A4
公开(公告)日：2012-02-08
申请号：EP07784191
申请日：2007-05-29
申请人： APPLIED MATERIALS INC
发明人： CHEN XIAOLIN , NEMANI SRINIVAS D , VENKATARAMAN SHANKAR
IPC分类号： H01L21/302 , C23C16/04 , C23C16/40 , C23C16/56 , H01L21/02 , H01L21/316 , H01L21/66 , H01L21/762
CPC分类号： C23C16/56 , C23C16/045 , C23C16/402 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02277 , H01L21/02323 , H01L21/0234 , H01L21/02359 , H01L21/31612 , H01L21/76224 , H01L22/12 , H01L2924/0002 , H01L2924/00

5. 发明申请

WO2012094149A3 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A3
公开(公告)日：2013-01-31
申请号：PCT/US2011066275
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

6. 发明申请

WO2013012536A2 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 审中-公开
标题翻译：表面处理和沉积减少出口
公开(公告)号：WO2013012536A2
公开(公告)日：2013-01-24
申请号：PCT/US2012044679
申请日：2012-06-28
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/318 , H01L21/205
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

7. 发明申请

WO2012102809A3 POLYSILICON FILMS BY HDP-CVD 审中-公开
标题翻译：聚硅氧烷膜通过HDP-CVD
公开(公告)号：WO2012102809A3
公开(公告)日：2012-10-04
申请号：PCT/US2011066601
申请日：2011-12-21
申请人： APPLIED MATERIALS INC , WANG ANCHUAN , CHEN XIAOLIN , LEE YOUNG S
发明人： WANG ANCHUAN , CHEN XIAOLIN , LEE YOUNG S
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

8. 发明申请

WO2005064651A2 IMPROVED GAP-FILL TECHNIQUES 审中-公开
标题翻译：改进的间隙填充技术
公开(公告)号：WO2005064651A2
公开(公告)日：2005-07-14
申请号：PCT/US2004043698
申请日：2004-12-21
申请人： APPLIED MATERIALS INC , MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
发明人： MUKAI KEVIN MIKIO , BRANSHAW KIMBERLY , YUAN ZHENG , XIA XINYUN , CHEN XIAOLIN , LI DONGQING , KARIM M ZIAUL , TON VAN , CHING CARY , GHANAYEIM STEVE , INGLE NITIN K
IPC分类号： C23C16/04 , C23C16/40 , C23C16/505 , H01L21/316 , H01L21/762 , H01L21/768 , H01L21/00
CPC分类号： C23C16/045 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02274 , H01L21/31612 , H01L21/76224 , H01L21/76828 , H01L21/76832 , H01L21/76837
摘要： A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.
摘要翻译：可以单独或组合使用各种技术来改善由化学气相沉积（CVD）形成的介电材料的间隙填充性能。在一种方法中，使用次大气压化学气相沉积（SACVD）沉积第一介电层，然后使用高密度等离子体化学气相沉积（HDP-CVD）或等离子体增强化学气相沉积（PECVD）沉积第二介电层，。在另一种方法中，在存在从远程等离子体室流入处理室的反应性离子物质的情况下沉积SACVD电介质层，其在沉积处理期间执行蚀刻。在另一种方法中，可以利用SACVD结合在高温下沉积的氧化物层来填充高方面沟槽。

9. 发明申请

WO2011090626A3 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：WO2011090626A3
公开(公告)日：2011-10-27
申请号：PCT/US2010060852
申请日：2010-12-16
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过将氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调节氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

10. 发明申请

WO2007140377A9 A NOVEL DEPOSITION-PLASMA CURE CYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE 审中-公开
标题翻译：一种新型沉积 - 等离子体固化循环过程，以提高二氧化硅膜的质量
公开(公告)号：WO2007140377A9
公开(公告)日：2008-10-16
申请号：PCT/US2007069899
申请日：2007-05-29
申请人： APPLIED MATERIALS INC , CHEN XIAOLIN , NEMANI SRINIVAS D , VENKATARAMAN SHANKAR
发明人： CHEN XIAOLIN , NEMANI SRINIVAS D , VENKATARAMAN SHANKAR
IPC分类号： H01L21/302
CPC分类号： C23C16/56 , C23C16/045 , C23C16/402 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/02277 , H01L21/02323 , H01L21/0234 , H01L21/02359 , H01L21/31612 , H01L21/76224 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.
摘要翻译：描述了用氧化硅填充衬底上的间隙的方法。所述方法可以包括以下步骤：将有机硅前体和氧前体引入沉积室，使前体反应以在衬底上的间隙中形成第一氧化硅层，并蚀刻第一氧化硅层以还原碳内容在图层中。所述方法还可以包括在第一层上形成第二氧化硅层，并蚀刻第二层以减少第二层中的碳含量。在填充间隙之后对氧化硅层进行退火。

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