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    • 2. 发明申请
    • CLEANING OPTIMIZATION OF PECVD SOLAR FILMS
    • PECVD太阳能膜的清洁优化
    • WO2011084381A2
    • 2011-07-14
    • PCT/US2010/060107
    • 2010-12-13
    • APPLIED MATERIALS, INC.SCHMITT, Francimar, C.YUAN, ZhengZHENG, YiYANG, FanLI, Lipan
    • SCHMITT, Francimar, C.YUAN, ZhengZHENG, YiYANG, FanLI, Lipan
    • H01L31/042H01L31/18H01L21/302
    • H01L31/03921H01L31/03685H01L31/03762H01L31/075H01L31/076H01L31/1816H01L31/202Y02E10/545Y02E10/548Y02P70/521
    • Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.
    • 本发明的实施方案通常提供在基板处理室中形成多个薄膜单结或多结太阳能电池的方法。 在一个实施例中,一种用于处理多个薄膜太阳能电池基板的方法包括在单个处理室中顺序地在第一基板和室部件的表面上沉积第一未掺杂层和第一掺杂层,去除具有 去除来自处理室的掺杂和未掺杂的层,去除沉积在室组件上的第二掺杂层,以暴露下面的第一未掺杂层,其用作待处理室中待处理的第二衬底的调味层,以及顺序地沉积第二未掺杂层 以及处理室中的第二衬底上的第二掺杂层。 在一个示例中,第一未掺杂层是非晶硅或微晶硅。 可以以期望的间隔进行全部清洁处理,以在常规调味过程之前暴露室部件的表面,并且随后在处理室中进行沉积。
    • 8. 发明申请
    • CONTROLLED GROWTH OF LARGER HETEROJUNCTION INTERFACE AREA FOR ORGANIC PHOTOSENSITIVE DEVICES
    • 用于有机感光装置的大型异步接口界面的控制生长
    • WO2008097258A2
    • 2008-08-14
    • PCT/US2007/015809
    • 2007-07-10
    • THE TRUSTEES OF PRINCETON UNIVERSITYTHE REGENTS OF THE UNIVERSITY OF MICHIGANYANG, FanFORREST, Stephen, R.
    • YANG, FanFORREST, Stephen, R.
    • H01L51/42
    • H01L51/4246H01L51/0008H01L51/4253Y02E10/549Y02P70/521
    • An optoelectronic device and a method of fabricating a photosensitive optoelectronic device includes depositing a first organic semiconductor material on a first electrode to form a continuous first layer having protrusions, a side of the first layer opposite the first electrode having a surface area at least three times greater than an underlying lateral cross-sectional area; depositing a second organic semiconductor material directly on the first layer to form a discontinuous second layer, portions of the first layer remaining exposed; depositing a third organic semiconductor material directly on the second layer to form a discontinuous third layer, portions of at least the second layer remaining exposed; depositing a fourth organic semiconductor material on the third layer to form a continuous fourth layer, filling any exposed gaps and recesses in the first, second, and third layers; and depositing a second electrode on the fourth layer, wherein at least one of the first electrode and the second electrode is transparent, and the first and third organic semiconductor materials are both of a donor-type or an acceptor-type relative to second and fourth organic semiconductor materials, which are of the other material type.
    • 光电子器件和制造光敏光电子器件的方法包括在第一电极上沉积第一有机半导体材料以形成具有突起的连续的第一层,与第一电极相对的第一层的一侧的表面积至少为三倍 大于下面的横截面积; 将第二有机半导体材料直接沉积在第一层上以形成不连续的第二层,第一层的部分保持暴露; 将第三有机半导体材料直接沉积在第二层上以形成不连续的第三层,至少第二层的部分保持暴露; 在第三层上沉积第四有机半导体材料以形成连续的第四层,填充第一层,第二层和第三层中任何露出的间隙和凹陷; 以及在所述第四层上沉积第二电极,其中所述第一电极和所述第二电极中的至少一个是透明的,并且所述第一和第三有机半导体材料相对于第二和第四电极都是供体型或受体型 有机半导体材料,其它材料类型。