专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013052712A2 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
标题翻译：通过可转化氢终止方式选择性硅
公开(公告)号：WO2013052712A2
公开(公告)日：2013-04-11
申请号：PCT/US2012/058818
申请日：2012-10-04
申请人： APPLIED MATERIALS, INC. , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

2. 发明申请

WO2013025336A1 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS 审中-公开
标题翻译：含氮和含氮薄膜的干燥剂
公开(公告)号：WO2013025336A1
公开(公告)日：2013-02-21
申请号：PCT/US2012/048842
申请日：2012-07-30
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065 , H01L21/318
CPC分类号： H01L21/3065 , H01L21/31116
摘要： Method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes remote plasma etch formed from fluorine-containing precursor and oxygen-containing precursor. Plasma effluents from remote plasma are flowed into a substrate processing region where the plasma effluents react with exposed regions of silicon-and-nitrogen-containing material. Plasmas effluents react with patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. Silicon-and-nitrogen-containing material selectivity results partly from presence of an ion suppression element positioned between the remote plasma and substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。含氮和氮的材料的选择性部分地来自位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

3. 发明申请

WO2013033527A2 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 审中-公开
标题翻译：选择性抑制含氮和硅的材料的干蚀刻速率
公开(公告)号：WO2013033527A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053329
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
发明人： WANG, Yunyu , WANG, Anchuan , ZHANG, Jingchun , INGLE, Nitin K. , LEE, Young S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H 2 ). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了一种抑制图案化异质结构上的暴露的含硅和氮材料的蚀刻速率的方法，其包括两阶段远程等离子体蚀刻。使用该方法增加了硅相对于氮化硅和其他含硅和氮材料的蚀刻选择性。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的多相结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一阶段的等离子体流出物由包括三氟化氮和氢（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地去除缺少保护性固体副产物的材料。第二阶段的等离子体流出物由含氟前体的远程等离子体形成。

4. 发明申请

WO2012102809A2 POLYSILICON FILMS BY HDP-CVD 审中-公开
标题翻译：多晶硅薄膜的HDP-CVD
公开(公告)号：WO2012102809A2
公开(公告)日：2012-08-02
申请号：PCT/US2011/066601
申请日：2011-12-21
申请人： APPLIED MATERIALS, INC. , WANG, Anchuan , CHEN, Xiaolin , LEE, Young S.
发明人： WANG, Anchuan , CHEN, Xiaolin , LEE, Young S.
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述了形成多晶硅层的方法。该方法包括在包含沉积基底的基底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶薄膜。偏压等离子体功率调整的可用性进一步使得能够调整所形成的多晶硅层的共形性。当掺杂剂包含在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

5. 发明申请

WO2012177789A2 INTEGRATED PROCESS MODULATION FOR PSG GAPFILL 审中-公开
标题翻译： PSG GAPFILL的集成过程调制
公开(公告)号：WO2012177789A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/043384
申请日：2012-06-20
申请人： APPLIED MATERIALS, INC. , LEE, Young S. , WANG, Anchuan , CHAN, Lan Chia , VENKATARAMAN, Shankar
发明人： LEE, Young S. , WANG, Anchuan , CHAN, Lan Chia , VENKATARAMAN, Shankar
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02129 , H01L21/02274 , H01L21/0234 , H01L21/76224
摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.
摘要翻译：在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。此后，PSG膜的第一部分的一部分可被回蚀刻。回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度的PSG电影。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式