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1. 发明申请

WO2011162865A2 A NUCLEATION PROMOTION LAYER FORMED ON A SUBSTRATE TO ENHANCE DEPOSITION OF A TRANSPARENT CONDUCTIVE LAYER 审中-公开
标题翻译：在基底上形成的增强促进层以增强透明导电层的沉积
公开(公告)号：WO2011162865A2
公开(公告)日：2011-12-29
申请号：PCT/US2011/033449
申请日：2011-04-21
申请人： APPLIED MATERIALS, INC. , SCHUEGRAF, Klaus , BHATNAGAR,, Yashraj K. , MCCOMB, Brendan , TANG, Jianshe
发明人： SCHUEGRAF, Klaus , BHATNAGAR,, Yashraj K. , MCCOMB, Brendan , TANG, Jianshe
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/022483 , H01L31/0392 , H01L31/056 , Y02E10/52
摘要： Methods for forming a nucleation promotion layer prior to formation of a transparent conductive layer suitable for use in PV cells are provided. In one embodiment, the method includes forming a seed layer on a substrate by materials sputtered from a first target disposed in a reactive sputter processing chamber, and forming a transparent conductive layer on the seed layer by materials sputtered from a second target disposed in the reactive sputter processing chamber, wherein the first and the second target are fabricated by a containing material having dopants formed therein and dopant concentration formed in the first target is higher than the dopant concentration formed in the second target.
摘要翻译：提供了在形成适用于PV电池的透明导电层之前形成成核促进层的方法。在一个实施例中，该方法包括通过从设置在反应溅射处理室中的第一靶溅射的材料在衬底上形成种子层，并且通过从设置在反应性反应器中的第二靶溅射的材料在种子层上形成透明导电层溅射处理室，其中通过在其中形成有掺杂剂的含有材料制造第一和第二靶，并且在第一靶中形成的掺杂剂浓度高于在第二靶中形成的掺杂浓度。

2. 发明申请

WO2012112937A2 METHOD AND SYSTEM FOR WAFER LEVEL SINGULATION 审中-公开
标题翻译：用于水平层叠的方法和系统
公开(公告)号：WO2012112937A2
公开(公告)日：2012-08-23
申请号：PCT/US2012/025716
申请日：2012-02-17
申请人： Applied Materials, Inc. , SCHUEGRAF, Klaus , RAMASWAMI, Seshadri , RICE, Michael, R. , SALEK, Mohsen, S. , BJORKMAN, Claes, H.
发明人： SCHUEGRAF, Klaus , RAMASWAMI, Seshadri , RICE, Michael, R. , SALEK, Mohsen, S. , BJORKMAN, Claes, H.
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/30 , H01L21/302 , H01L21/308 , H01L21/561 , H01L21/568 , H01L21/67017 , H01L21/67207 , H01L21/6836 , H01L23/544 , H01L24/94 , H01L2221/68327 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.
摘要翻译：单片化多个半导体管芯的方法包括提供载体衬底并将半导体衬底接合到载体衬底。半导体衬底包括多个器件。该方法还包括在半导体衬底上形成掩模层，将掩模层的预定部分暴露于光，以及处理掩模层的预定部分以在半导体衬底上形成预定的掩模图案。所述方法还包括形成所述多个半导体管芯，所述多个半导体管芯中的每一个与所述预定掩模图案相关联并且包括所述多个器件中的一个或多个并且从所述载体衬底分离所述多个半导体管芯。

3. 发明申请

WO2012106214A2 PLASMA TREATMENT OF TCO LAYERS FOR SILICON THIN FILM PHOTOVOLTAIC DEVICES 审中-公开
标题翻译：用于硅薄膜光伏器件的TCO层的等离子体处理
公开(公告)号：WO2012106214A2
公开(公告)日：2012-08-09
申请号：PCT/US2012/023001
申请日：2012-01-27
申请人： APPLIED MATERIALS, INC. , AHMED, Khaled , SCHUEGRAF, Klaus
发明人： AHMED, Khaled , SCHUEGRAF, Klaus
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/075 , H01L31/1884 , Y02E10/548
摘要： Embodiments of the invention generally provide methods for forming a silicon-based photovoltaic (PV) device containing a transparent conductive oxide (TCO) layer that is exposed to a very high frequency (VHF) plasma. In one embodiment, a method includes depositing a TCO layer on an underlying surface, such as a transparent substrate, and exposing the TCO layer to a VHF plasma to form a treated surface on the TCO layer during a plasma treatment process. The VHF plasma is generated by ionizing a process gas containing hydrogen and nitrous oxide at an excitation frequency within a range from about 30 MHz to about 300 MHz. The method further includes forming a p-i-n junction over the TCO layer, wherein the p-i-n junction contains a p-type Si-based layer disposed on the treated surface of the TCO layer. In some examples, the TCO layer contains zinc oxide and the p-i-n junction contains amorphous silicon.
摘要翻译：本发明的实施方案通常提供形成含有暴露于非常高频（VHF）等离子体的透明导电氧化物（TCO）层的硅基光伏（PV）装置）的方法。在一个实施例中，一种方法包括在诸如透明基底的下表面上沉积TCO层，以及在等离子体处理过程中将TCO层暴露于VHF等离子体以在TCO层上形成经处理的表面。通过以约30MHz至约300MHz的范围内的激发频率电离含有氢和一氧化二氮的工艺气体来产生VHF等离子体。该方法还包括在TCO层上形成p-i-n结，其中p-i-n结包含设置在TCO层的被处理表面上的p型Si基层。在一些实例中，TCO层含有氧化锌，p-i-n结含有非晶硅。

4. 发明申请

WO2011129979A2 METHOD FOR DEPOSITING BARRIER LAYERS ON SUBSTRATES FOR HIGH QUALITY FILMS 审中-公开
标题翻译：在高质量薄膜基底上沉积障碍层的方法
公开(公告)号：WO2011129979A2
公开(公告)日：2011-10-20
申请号：PCT/US2011/029870
申请日：2011-03-24
申请人： APPLIED MATERIALS, INC. , SINGH, Kaushal, K. , SARAF, Gaurav , EBERSPACHER, Chris , SCHUEGRAF, Klaus , SEVERIN, Daniel
发明人： SINGH, Kaushal, K. , SARAF, Gaurav , EBERSPACHER, Chris , SCHUEGRAF, Klaus , SEVERIN, Daniel
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L21/02521 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L31/022466 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/076 , H01L31/1884 , Y02E10/541 , Y02E10/548
摘要： Methods of forming barrier films for thin-film photovoltaic devices are provided. The barrier films are deposited at interfaces of the device, such as between conductor layers and layers adjacent thereto, and between photoelectric layers and layers adjacent thereto. The barrier films use dopants to tune refractive index to an intermediate value between the refractive indices of the adjacent layers to provide desired optical properties. The barrier films may also include nucleation species, such as nucleation films or nucleation sites, to stimulate growth of high quality layers adjacent to the barrier films. The barrier films may be bilayer films with a high-density portion for good barrier properties and a low-density portion into which nucleation species may be added by various implantation methods.
摘要翻译：提供了形成用于薄膜光伏器件的阻挡膜的方法。阻挡膜沉积在器件的界面处，例如在导体层和与其相邻的层之间，以及在与其相邻的光电层和层之间。阻挡膜使用掺杂剂将折射率调节到相邻层的折射率之间的中间值，以提供期望的光学性质。阻挡膜还可以包括成核物质，例如成核膜或成核位点，以刺激邻近阻挡膜的高质量层的生长。阻挡膜可以是具有良好阻隔性的高密度部分的双层膜和通过各种注入方法可以加入成核物质的低密度部分。

5. 发明申请

WO2010002752A1 READ DISTURB MITIGATION IN NON-VOLATILE MEMORY 审中-公开
标题翻译：在非易失性存储器中读取干扰减轻
公开(公告)号：WO2010002752A1
公开(公告)日：2010-01-07
申请号：PCT/US2009/048990
申请日：2009-06-29
申请人： SANDISK CORPORATION , MOKHLESI, Nima , SCHUEGRAF, Klaus
发明人： MOKHLESI, Nima , SCHUEGRAF, Klaus
IPC分类号： G11C16/34
CPC分类号： G11C11/5642 , G11C16/3418 , G11C16/3427 , G11C29/00
摘要： Read disturb is reduced in non-volatile storage. In one aspect, when a read command is received from a host for reading a selected word line, a word line which is not selected for reading is randomly chosen and its storage elements are sensed to determine optimized read compare levels for reading the selected word line. Or, a refresh operation may be indicated for the entire block based on an error correction metric obtained in reading the storage elements of the chosen word line. This is useful especially when the selected word line is repeatedly selected for reading, exposing the other word lines to additional read disturb. In another aspect, when multiple data states are stored, one read compare level is obtained from sensing, e.g., from a threshold voltage distribution, and other read compare levels are derived from a formula.
摘要翻译：非易失性存储器中的读取干扰减少。在一个方面，当从主机接收到用于读取所选择的字线的读取命令时，随机选择未被选择用于读取的字线，并且感测其存储元件以确定用于读取所选字线的优化读取比较电平。或者，可以基于在读取所选字线的存储元件中获得的纠错度量，针对整个块指示刷新操作。特别是当所选字线被重复选择用于读取时，这是有用的，将其它字线暴露于额外的读取干扰。在另一方面，当存储多个数据状态时，通过例如来自阈值电压分布的感测获得一个读取比较电平，并且从公式导出其它读取的比较电平。

6. 发明申请

WO2010147809A2 PROGRAMMING REVERSIBLE RESISTANCE SWITCHING ELEMENTS 审中-公开
标题翻译：编程可逆电阻开关元件
公开(公告)号：WO2010147809A2
公开(公告)日：2010-12-23
申请号：PCT/US2010/037841
申请日：2010-06-08
申请人： SANDISK 3D LLC , SEKAR, Deepak, C. , SCHUEGRAF, Klaus , SCHEUERLEIN, Roy
发明人： SEKAR, Deepak, C. , SCHUEGRAF, Klaus , SCHEUERLEIN, Roy
IPC分类号： G11C13/00
CPC分类号： G11C13/0007 , G11C7/00 , G11C8/12 , G11C13/0064 , G11C13/0069 , G11C2013/0076 , G11C2013/0088 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/72
摘要： A storage system and method for operating the storage system that uses reversible resistance-switching elements is described. Techniques are disclosed herein for varying programming conditions to account for different resistances that memory cells have. These techniques can program memory cells in fewer attempts, which can save time and/or power. Techniques are disclosed herein for achieving a high programming bandwidth while reducing the worst case current and/or power consumption. In one embodiment, a page mapping scheme is provided that programs multiple memory cells in parallel in a way that reduces the worst case current and/or power consumption.
摘要翻译：描述了一种用于操作使用可逆电阻切换元件的存储系统的存储系统和方法。本文公开了用于改变编程条件以解决存储器单元具有的不同电阻的技术。这些技术可以以较少的尝试编程存储器单元，这可以节省时间和/或功率。本文公开了用于实现高编程带宽同时减少最坏情况下的电流和/或功率消耗的技术。在一个实施例中，提供了以减少最坏情况下的电流和/或功率消耗的方式并行地编程多个存储器单元的页面映射方案。

7. 发明申请

WO2013070685A1 INTERLAYER POLYSILICON DIELECTRIC CAP AND METHOD OF FORMING THEREOF 审中-公开
标题翻译：中间层多晶硅电介质盖及其形成方法
公开(公告)号：WO2013070685A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/063841
申请日：2012-11-07
申请人： APPLIED MATERIALS, INC.
发明人： ROGERS, Matthew S. , SCHUEGRAF, Klaus
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/31 , H01L21/205
CPC分类号： H01L21/28273 , H01L21/67167 , H01L27/11521
摘要： In some embodiments, an interlayer polysilicon dielectric cap disposed atop a substrate having a first floating gate, a second floating gate and an isolation layer disposed between the first floating gate and the second floating gate may include: a first nitrogen containing layer disposed atop an upper portion and sidewalls of the first floating gate and second floating gate; a first oxygen containing layer disposed atop the first nitrogen containing layer and an upper surface of the isolation layer; a second nitrogen containing layer disposed atop an upper portion and sidewalls of the first oxygen containing layer; and a second oxygen containing layer disposed atop the second nitrogen containing layer and an upper surface of the first oxygen containing layer.
摘要翻译：在一些实施例中，设置在具有第一浮动栅极，第二浮动栅极和设置在第一浮动栅极和第二浮动栅极之间的隔离层的衬底顶部的层间多晶硅介电体盖可以包括：设置在上部第一浮栅和第二浮栅的部分和侧壁; 设置在第一含氮层顶部和隔离层的上表面上的第一含氧层; 设置在第一含氧层的上部和侧壁顶部的第二含氮层; 以及设置在第二含氮层顶部和第一含氧层的上表面上的第二含氧层。

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