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1. 发明申请

WO2019096375A1 APPARATUS FOR HEAT TREATMENT OF A SUBSTRATE, APPARATUS FOR TRANSPORTING A FLEXIBLE SUBSTRATE, AND METHOD FOR HEAT TREATMENT OF A SUBSTRATE 审中-公开
公开(公告)号：WO2019096375A1
公开(公告)日：2019-05-23
申请号：PCT/EP2017/079288
申请日：2017-11-15
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank , BUSCHBECK, Wolfgang , HEIN, Stefan
发明人： SCHNAPPENBERGER, Frank , BUSCHBECK, Wolfgang , HEIN, Stefan
IPC分类号： C23C14/54 , C23C14/56 , C23C16/46 , C23C16/48 , C23C16/54 , G05D23/27 , H01K1/32 , H01L21/67
CPC分类号： C23C16/46 , C23C14/541 , C23C14/562 , C23C16/481 , C23C16/545 , H01L21/67115 , H01L21/67248 , H01L21/67253
摘要： According to a first aspect, the present disclosure provides an apparatus for heat treatment of a substrate comprising at least one heating element, and at least one shield, wherein the at least one shield is moveable between a first position and a second position between the substrate and the at least one heating element, and the at least one shield comprises at least one reflective surface. According to a further aspect, the present disclosure provides an apparatus for transporting a flexible substrate comprising the apparatus for heat treatment of a substrate according to the first aspect, a substrate transport controller, and a sensor, wherein the substrate is transported past the apparatus for heat treatment of a substrate. According to a further aspect, the present disclosure provides a method for heat treatment of a substrate comprising emitting radiation towards the substrate, and temporarily reflecting the radiation to restrict the heating of the substrate.

2. 发明申请

WO2016012038A1 TARGET ARRANGEMENT, PROCESSING APPARATUS THEREWITH AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：目标布置及其制造方法及其制造方法
公开(公告)号：WO2016012038A1
公开(公告)日：2016-01-28
申请号：PCT/EP2014/065739
申请日：2014-07-22
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank
发明人： SCHNAPPENBERGER, Frank
IPC分类号： C23C14/34 , C23C14/56 , H01J37/34
CPC分类号： H01J37/3423 , C23C14/3407 , H01J37/3417 , H01J37/342 , H01J37/3435 , H01J37/347 , H01J37/3491
摘要： A target arrangement (100; 101; 102; 103; 104; 106) for a processing apparatus (105; 107) is described. The target arrangement includes a target support (110) configured for supporting a non-planar target material (120), wherein the target support (110) includes a vacuum side (130) and an atmospheric side (140). Further, a processing apparatus adapted for a target arrangement and a method for manufacturing a target arrangement are described.
摘要翻译：描述了用于处理装置（105; 107）的目标装置（100; 101; 102; 103; 104; 106）。目标装置包括被配置为支撑非平面靶材料（120）的目标支撑件（110），其中目标支撑件（110）包括真空侧（130）和大气侧（140）。此外，描述适用于目标装置的处理装置和用于制造目标装置的方法。

3. 发明申请

WO2022089737A1 DEPOSITION SOURCE, DEPOSITION APPARATUS FOR DEPOSITING EVAPORATED MATERIAL, AND METHODS THEREFOR 审中-公开
公开(公告)号：WO2022089737A1
公开(公告)日：2022-05-05
申请号：PCT/EP2020/080294
申请日：2020-10-28
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank , DEPPISCH, Thomas , WOLFF, Susanne , BUSCHBECK, Wolfgang
发明人： SCHNAPPENBERGER, Frank , DEPPISCH, Thomas , WOLFF, Susanne , BUSCHBECK, Wolfgang
IPC分类号： C23C14/24 , C23C14/56 , H01L51/00
摘要： According to aspects of the present disclosure, a deposition source, a deposition apparatus, and methods for depositing a layer of evaporated material on a substrate are provided. The deposition source (100) includes a crucible (104) for providing evaporated material, a first nozzle zone (110) extending in a first direction and having a first plurality of nozzles (101) in communication with the crucible (104), and a second nozzle zone (120) extending in the first direction from an end of the first nozzle zone (110), the second nozzle zone (120) having a second plurality of nozzles (102) in communication with the crucible (104), wherein each neighbouring nozzle of the second plurality of nozzles (102) is tilted in a direction towards the first nozzle zone. The deposition apparatus (200) includes a vacuum chamber (201), a deposition source (100) according to aspects of the present disclosure, and a substrate transport for transporting the substrate S past the deposition source (100), or a source transport for transporting the deposition source (100) past the substrate S.

4. 发明申请

WO2018054471A1 CARRIER FOR SUPPORTING A SUBSTRATE, APPARATUS FOR PROCESSING A SUBSTRATE AND METHOD THEREFORE 审中-公开
标题翻译：用于支撑基板的载体，用于处理基板的装置及其方法
公开(公告)号：WO2018054471A1
公开(公告)日：2018-03-29
申请号：PCT/EP2016/072577
申请日：2016-09-22
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank
发明人： SCHNAPPENBERGER, Frank
IPC分类号： H01L21/67 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/67712 , H01L21/6776 , H01L21/6831
摘要： A carrier (100) for supporting a substrate (200) in a vacuum processing chamber is provided. The carrier includes: A carrier body (110) configured for holding the substrate (200); an electric device (120); and a heat protection arrangement (130) at least partially surrounding the electric device (120) for protecting the electric device from heat. Further an apparatus (300) for processing a substrate (200) is provided. The apparatus includes: a vacuum processing chamber (310) adapted for processing the substrate (200); a transport system (320) adapted for transporting a carrier (100) for supporting the substrate, a processing device (330) for processing the substrate (200), and a cooling arrangement (340) arranged in the vacuum processing chamber, such that a heat flux from a heat protection arrangement of the carrier to the cooling arrangement can be provided.
摘要翻译：提供了用于在真空处理室中支撑衬底（200）的载体（100）。该载体包括：载体主体（110），其被构造成用于保持基板（200）; 电装置（120）; 以及至少部分围绕电气装置（120）以防止电气装置受热的热保护装置（130）。此外提供了用于处理基板（200）的设备（300）。该设备包括：适于处理基板（200）的真空处理室（310）; 适于输送用于支撑衬底的载体（100）的输送系统（320），用于处理衬底（200）的处理装置（330）以及布置在真空处理室中的冷却装置（340），使得可以提供从载体的热保护装置到冷却装置的热通量。

5. 发明申请

WO2017016576A1 DEPOSITION SOURCE, VACUUM DEPOSITION APPARATUS, AND METHODS OF OPERATING THEREOF 审中-公开
标题翻译：沉积源，真空沉积装置及其操作方法
公开(公告)号：WO2017016576A1
公开(公告)日：2017-02-02
申请号：PCT/EP2015/067049
申请日：2015-07-24
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank , DEPPISCH, Thomas
发明人： SCHNAPPENBERGER, Frank , DEPPISCH, Thomas
IPC分类号： H01J37/34
CPC分类号： H01J37/3438 , H01J37/3444
摘要： A deposition source (100, 200, 201, 300) for sputter deposition is described. The deposition source includes: a cathode (130, 230) for providing a target material to be deposited; at least one anode assembly (110, 210) having at least a first anode segment (111, 211) which faces a first portion of the cathode and a second anode segment (112, 212) which faces a second portion of the cathode; and a connector assembly (120). The connector assembly includes: a first electric connection (121) for connecting the first anode segment (111, 211) to a first reference potential (PI); a second electric connection (122) for connecting the second anode segment (112, 212) to a second reference potential (P2); and an adjusting means (150) for adjusting at least one of a first electric resistance of the first electric connection (121) and a second electric resistance of the second electric connection (122).
摘要翻译：描述了用于溅射沉积的沉积源（100,200,2201,300）。沉积源包括：用于提供要沉积的靶材料的阴极（130,230）; 至少一个阳极组件（110,210）具有至少面对阴极的第一部分的第一阳极段（111,211）和面对阴极的第二部分的第二阳极段（112,212）; 和连接器组件（120）。连接器组件包括：用于将第一阳极段（111,211）连接到第一参考电位（PI）的第一电连接（121）; 用于将所述第二阳极段（112,212）连接到第二参考电位（P2）的第二电连接（122）; 以及用于调节第一电连接（121）的第一电阻和第二电连接（122）的第二电阻中的至少一个的调节装置（150）。

6. 发明申请

WO2016180452A1 PROTECTION TUBE FOR REACTIVE TARGETS 审中-公开
标题翻译：用于反应性目标的保护管
公开(公告)号：WO2016180452A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060250
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SCHNAPPENBERGER, Frank
发明人： SCHNAPPENBERGER, Frank
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/32853 , H01J37/3405 , H01J37/3417 , H01J37/3485
摘要： A method for protecting a target during handling of the target is described. The method includes covering the target with a protection member and sealing the inside of the protection member in an airtight manner, such that a seal is provided between the protection member and the target.
摘要翻译：描述了在处理目标期间保护目标的方法。该方法包括用保护构件覆盖目标物并以气密的方式密封保护构件的内部，从而在保护构件和目标之间提供密封。

7. 发明申请

WO2013135265A1 MINI ROTATABLE SPUTTER DEVICES FOR SPUTTER DEPOSITION 审中-公开
标题翻译：用于喷射器沉积的微型可旋转溅射装置
公开(公告)号：WO2013135265A1
公开(公告)日：2013-09-19
申请号：PCT/EP2012/054261
申请日：2012-03-12
申请人： APPLIED MATERIALS, INC. , DEPPISCH, Thomas , SCHNAPPENBERGER, Frank , LOPP, Andreas , FLOCK, Annemarie , GÖRISCH, Götz
发明人： DEPPISCH, Thomas , SCHNAPPENBERGER, Frank , LOPP, Andreas , FLOCK, Annemarie , GÖRISCH, Götz
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/3414 , C23C14/35 , H01J37/3277 , H01J37/3405 , H01J37/3417 , H01J37/342
摘要： A deposition apparatus and a method for depositing deposition material on a web is described. The deposition apparatus includes a first sputter device support defining a first axis for a first rotatable sputter device, a second sputter device support defining a second axis for a second rotatable sputter device, and a coating window. The first sputter device support and the second sputter device support are adapted for supporting the first rotatable sputter device and the second rotatable sputter device to provide at least a component of the deposition material to be deposited on the web over a coating drum. Further, the distance between the first axis and the second axis is smaller than about 200 mm.
摘要翻译：描述了沉积设备和在网上沉积沉积材料的方法。沉积装置包括限定用于第一可旋转溅射装置的第一轴线的第一溅射装置支撑件，限定用于第二可旋转溅射装置的第二轴线的第二溅射装置支撑件和涂覆窗口。第一溅射装置支撑件和第二溅射装置支撑件适于支撑第一可旋转溅射装置和第二可旋转溅射装置，以提供要沉积在卷筒纸上的沉积材料的至少一部分在涂布滚筒上。此外，第一轴和第二轴之间的距离小于约200mm。

8. 发明申请

WO2011098538A1 METHOD FOR PRODUCING AN ITO LAYER AND SPUTTERING SYSTEM 审中-公开
标题翻译：生产ITO层和溅射系统的方法
公开(公告)号：WO2011098538A1
公开(公告)日：2011-08-18
申请号：PCT/EP2011/051991
申请日：2011-02-10
申请人： APPLIED MATERIALS, INC. , HELLMICH, Anke , SCHNAPPENBERGER, Frank , KREMPEL-HESSE, Joerg
发明人： HELLMICH, Anke , SCHNAPPENBERGER, Frank , KREMPEL-HESSE, Joerg
IPC分类号： C23C14/08 , C23C14/34 , C23C14/35
CPC分类号： C23C14/086 , C23C14/3407 , C23C14/3421 , C23C14/35 , H01J37/3405 , H01J37/342
摘要： The present disclosure relates to a method for producing an indium-tin-oxide layer, comprising: providing a substrate to be coated in a sputtering chamber; providing a rotatable non-bonded target around a backing tube for coating the substrate in the sputtering chamber; and sputtering the material from the target in an atmosphere containing an O 2 /H 2 mixture. Further, the present disclosure relates to a sputtering system comprising a sputtering chamber having at least one gas inlet and being adapted for at least one backing tube for a non-bonded rotatable target, a control device adapted to control the flow through the gas inlet, wherein the control device is adapted to control the at least one gas inlet such that a coating on a substrate using a sputtering process is performed in an atmosphere containing an O 2 /H 2 mixture in the sputtering chamber for forming an indium-tin-oxide layer.
摘要翻译：本公开内容涉及一种制造铟锡氧化物层的方法，包括：在溅射室中提供待涂覆的基板; 在背衬管周围提供可旋转的未粘合的靶，用于在溅射室中涂覆基底; 并在含有O 2 / H 2混合物的气氛中从靶上溅射材料。此外，本公开涉及一种溅射系统，其包括具有至少一个气体入口的溅射室，并且适用于至少一个用于非粘合的可旋转靶的背衬管，适于控制通过气体入口的流动的控制装置，其中所述控制装置适于控制所述至少一个气体入口，使得使用溅射工艺的衬底上的涂层在用于形成铟锡氧化物层的溅射室中的含有O 2 / H 2混合物的气氛中进行。

9. 发明申请

WO2019149382A1 DEPOSITION APPARATUS FOR DEPOSITING EVAPORATED MATERIAL AND METHODS THEREFOR 审中-公开
公开(公告)号：WO2019149382A1
公开(公告)日：2019-08-08
申请号：PCT/EP2018/052798
申请日：2018-02-05
申请人： APPLIED MATERIALS, INC. , DEPPISCH, Thomas , ARMSTRONG, Claire , SCHNAPPENBERGER, Frank
发明人： DEPPISCH, Thomas , ARMSTRONG, Claire , SCHNAPPENBERGER, Frank
IPC分类号： C23C14/56 , C23C14/24 , C23C14/54
CPC分类号： C23C14/562 , C23C14/24 , C23C14/546
摘要： A deposition apparatus (100) for depositing evaporated material onto a substrate (101) is described. The deposition apparatus comprises: a deposition source (110) for providing evaporated material; a material deposition zone (111) provided between the deposition source (110) and the substrate (101); a movable shutter (120) provided in the material deposition zone (111); and a deposition rate measurement device (130) provided in the material deposition zone (111) between the deposition source (110) and the movable shutter (120).

10. 发明申请

WO2018095514A1 APPARATUS AND METHOD FOR LAYER DEPOSITION ON A SUBSTRATE 审中-公开
公开(公告)号：WO2018095514A1
公开(公告)日：2018-05-31
申请号：PCT/EP2016/078440
申请日：2016-11-22
申请人： APPLIED MATERIALS, INC. , BUSCH, John D. , SCHNAPPENBERGER, Frank
发明人： BUSCH, John D. , SCHNAPPENBERGER, Frank
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34
CPC分类号： C23C14/56 , C23C14/35 , C23C14/352 , H01J37/3405 , H01J37/3417 , H01J37/3455
摘要： The present disclosure provides an apparatus (100) for layer deposition on a substrate (10). The apparatus (100) includes a vacuum chamber (101), at least one sputter source (110) in the vacuum chamber (101), wherein the at least one sputter source (110) includes a rotatable cylindrical cathode (112) and a magnet assembly (114) in the rotatable cylindrical cathode (112), and wherein the magnet assembly (114) is rotatable around a first rotational axis (115), a controller (120) configured to adjust an angle of the magnet assembly (114) with respect to a plane perpendicular to the substrate (10) by a rotation of the magnet assembly (114) around the first rotational axis (115), and a drive arrangement (130) configured for an essentially continuous linear movement of at least one of the substrate (10) and the at least one sputter source (110) during a layer deposition process.

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