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1. 发明申请

WO2011035157A2 APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 审中-公开
标题翻译：在线性系统中形成能量储存和光伏器件的装置和方法
公开(公告)号：WO2011035157A2
公开(公告)日：2011-03-24
申请号：PCT/US2010/049335
申请日：2010-09-17
申请人： APPLIED MATERIALS, INC. , PUSHPARAJ, Victor L. , NARWANKAR, Pravin K. , HAAS, Dieter , THAKUR, Bipin , ARCOT, Mahesh , GUJAR, Vikas , NALAMASU, Omkaram
发明人： PUSHPARAJ, Victor L. , NARWANKAR, Pravin K. , HAAS, Dieter , THAKUR, Bipin , ARCOT, Mahesh , GUJAR, Vikas , NALAMASU, Omkaram
IPC分类号： H01L31/042
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了一种用于在基底上形成复合材料的方法和装置。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。纤维网被引导通过各种处理室以形成复合材料。在另一个实施例中，大规模衬底包括离散衬底。离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。复合材料可用于形成储能装置和/或光伏器件。

2. 发明申请

WO2012054688A2 METHODS FOR ENHANCING TANTALUM FILAMENT LIFE IN HOT WIRE CHEMICAL VAPOR DEPOSITION PROCESSES 审中-公开
标题翻译：热线化学气相沉积工艺中增强钛酸盐寿命的方法
公开(公告)号：WO2012054688A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/057022
申请日：2011-10-20
申请人： APPLIED MATERIALS, INC. , THAKUR, Bipin , GRIFFITH CRUZ, Joe , KELLER, Stefan , GUJAR, Vikas , PATIL, Ravindra, Janu
发明人： THAKUR, Bipin , GRIFFITH CRUZ, Joe , KELLER, Stefan , GUJAR, Vikas , PATIL, Ravindra, Janu
IPC分类号： C23C16/44 , C23C16/448
CPC分类号： C23C16/24 , C23C16/4488 , C23C16/52
摘要： Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H 2 ) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.
摘要翻译：本文提供了使用热线化学气相沉积（HWCVD）工艺沉积薄膜的方法。在一些实施例中，操作HWCVD工具的方法可以包括：将第一时间段内的氢气（H2）提供给设置在HWCVD工具的处理室中的细丝; 并且流过灯丝，以在第一时间段之后将灯丝的温度升高到第一温度。

3. 发明申请

WO2017112843A1 CORROSION RESISTANT COATING FOR SEMICONDUCTOR PROCESS EQUIPMENT 审中-公开
标题翻译：半导体工艺设备的耐腐蚀涂层
公开(公告)号：WO2017112843A1
公开(公告)日：2017-06-29
申请号：PCT/US2016/068202
申请日：2016-12-22
申请人： APPLIED MATERIALS, INC.
发明人： PAREEK, Yogita , BAJAJ, Geetika , GORADIA, Prerna , KADAM, Ankur , THAKUR, Bipin
IPC分类号： H01L21/56 , H01L21/02 , H01L21/288
CPC分类号： H01L21/288 , H01L21/6719 , H01L21/68757
摘要： A corrosion resistant coating for semiconductor process equipment and methods of making corrosion resistant coatings for semiconductor process equipment are provided herein. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in an anodizing solution comprising a neutral electrolyte and a resistive material to form a corrosion resistant coating atop the aluminum containing body. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in a neutral electrolyte solution to form an aluminum oxide layer on a surface of the aluminum containing body; and dipping the anodized semiconductor processing chamber component in a resistive material solution to form a resistive material layer atop the aluminum oxide layer.
摘要翻译：本文提供了用于半导体工艺设备的耐腐蚀涂层和用于制造半导体工艺设备的耐腐蚀涂层的方法。在一些实施例中，一种处理半导体处理腔室部件的方法包括：在包含中性电解质和电阻材料的阳极氧化溶液中阳极氧化半导体处理腔室部件，该半导体处理腔室部件包括含铝主体，以在含铝主体顶上形成耐腐蚀涂层。在一些实施例中，处理半导体处理室部件的方法包括：在中性电解质溶液中阳极氧化包含含铝体的半导体处理室部件，以在含铝体的表面上形成氧化铝层; 并将阳极氧化半导体处理室部件浸入电阻材料溶液中以在氧化铝层顶上形成电阻材料层。

4. 发明申请

WO2015153123A1 GENERATION OF COMPACT ALUMINA PASSIVATION LAYERS ON ALUMINUM PLASMA EQUIPMENT COMPONENTS 审中-公开
标题翻译：铝等离子体设备组件的紧密氧化铝钝化层的生成
公开(公告)号：WO2015153123A1
公开(公告)日：2015-10-08
申请号：PCT/US2015/021249
申请日：2015-03-18
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Sung Je , KALITA, Laksheswar , PAREEK, Yogita , KADAM, Ankur , GORADIA, Prerna Sonthalia , THAKUR, Bipin , LUBOMIRSKY, Dmitry
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： C23C22/66 , C23C14/22 , C23C16/45525 , C23C16/45527 , C23C16/50 , C23C22/56 , C23F1/16 , C23F1/20 , C23F1/32 , C23F1/36 , H01J37/32009 , H01J37/3244 , H01J37/32532 , H01J37/3255 , H01L21/67069 , H01L21/67248 , H01L21/67253 , H01L21/67306 , Y10T428/24322 , Y10T428/24355
摘要： A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10°C, for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH 4 OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an Al x O y film having a thickness of 4 to 8nm and a surface roughness less than 0.05μm greater than a surface roughness of the component without the Al x O y film.
摘要翻译：在铝组分上产生紧密的氧化铝钝化层的方法包括在去离子水中漂洗至少1分钟，将其干燥至少1分钟，并在低于10℃的温度下将其暴露于浓硝酸中，一到三十分钟。该方法还包括将去离子水中的组分冲洗至少1分钟，将其干燥至少1分钟，并将其暴露于NH 4 OH 1秒至1分钟。该方法还包括将组分在去离子水中冲洗至少1分钟并将其干燥至少一分钟。用于等离子体处理系统的部件包括涂覆有厚度为4至8nm的Al x O y膜并且表面粗糙度小于不含Al x O y膜的部件的表面粗糙度小于0.05μm的铝部件。

5. 发明申请

WO2017155711A1 METHOD FOR ELECTROCHEMICALLY GROWN YTTRIA OR YTTRIUM OXIDE ON SEMICONDUCTOR PROCESSING EQUIPMENT 审中-公开
标题翻译：在半导体处理设备上电化学生长YTTRIA或氧化钇的方法
公开(公告)号：WO2017155711A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/019477
申请日：2017-02-24
申请人： APPLIED MATERIALS, INC.
发明人： KALITA, Laksheswar , GORADIA, Prerna A. , BAJAJ, Geetika , PAREEK, Yogita , LIN, Yixing , LUBOMIRSKY, Dmitry , KADAM, Ankur , THAKUR, Bipin , PAPKE, Kevin A. , VAIDYA, Kaushik
IPC分类号： C25D5/50 , C25D3/54 , C25D9/12 , C23C16/455
摘要： The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
摘要翻译：本公开总体上涉及电化学形成氧化钇或氧化钇的方法。所述方法可包括任选制备电化学浴，氧化钇或氧化钇电沉积到基材上，从基材表面去除溶剂，并在其上具有电沉积氧化钇或氧化钇的基材进行后处理。 / p>

6. 发明申请

WO2017155671A1 ALUMINUM ELECTROPLATING AND OXIDE FORMATION AS BARRIER LAYER FOR ALUMINUM SEMICONDUCTOR PROCESS EQUIPMENT 审中-公开
标题翻译：铝电镀和氧化物形成作为铝半导体工艺设备的屏障层
公开(公告)号：WO2017155671A1
公开(公告)日：2017-09-14
申请号：PCT/US2017/017817
申请日：2017-02-14
申请人： APPLIED MATERIALS, INC.
发明人： PAREEK, Yogita , KALITA, Laksheswar , BAJAJ, Geetika , PAPKE, Kevin A. , KADAM, Ankur , THAKUR, Bipin , LIN, Yixing , LUBOMIRSKY, Dmitry , GORADIA, Prerna A.
IPC分类号： H01L21/28 , H01L21/02
摘要： The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.
摘要翻译：本公开总体上涉及电化学形成铝或氧化铝的方法。该方法可包括任选地制备电化学浴，将铝或氧化铝电沉积到基材上，从基材表面除去溶剂，并在其上具有电沉积铝或氧化铝的基材进行后处理。 / p>

7. 发明申请

WO2016144439A1 BARRIER ANODIZATION METHODS TO DEVELOP ALUMINUM OXIDE LAYER FOR PLASMA EQUIPMENT COMPONENTS 审中-公开
标题翻译：开发用于等离子体设备组件的氧化铝层的阻挡放电方法
公开(公告)号：WO2016144439A1
公开(公告)日：2016-09-15
申请号：PCT/US2016/016203
申请日：2016-02-02
申请人： APPLIED MATERIALS, INC.
发明人： KALITA, Laksheswar , PAREEK, Yogita , KADAM, Ankur , THAKUR, Bipin , LUBOMIRSKY, Dmitry
IPC分类号： C25D17/02 , C25D21/12 , C25D11/06 , C25D11/02
CPC分类号： C23C16/50 , C23C14/564 , C23C16/4404 , C23C16/4581 , C25D11/06 , C25D11/08 , C25D11/10
摘要： The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes an aluminum body having an anodized coating disposed on the aluminum body formed from a neutral electrolyte solution, wherein the anodized coating has a film density higher than 3.1 g/cm -2 .
摘要翻译：本发明涉及室等离子体处理室装置中使用的腔室部件或制造室部件的方法。在一个实施例中，用于等离子体处理装置的腔室部件包括铝本体，其具有设置在由中性电解质溶液形成的铝体上的阳极氧化涂层，其中阳极氧化涂层的膜密度高于3.1g / cm -2。

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