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1. 发明申请

WO2011152958A3 TUNING OF POLISHING PROCESS IN MULTI-CARRIER HEAD PER PLATEN POLISHING STATION 审中-公开
公开(公告)号：WO2011152958A3
公开(公告)日：2011-12-08
申请号：PCT/US2011/035631
申请日：2011-05-06
申请人： APPLIED MATERIALS, INC. , MAI, David, H. , JEW, Stephen , HU, Xiaoyuan
发明人： MAI, David, H. , JEW, Stephen , HU, Xiaoyuan
IPC分类号： H01L21/304
摘要： An apparatus and method for simulating a substrate being polished in a multiple carrier head per platen station when no substrate is provided in one or more of the multiple carrier heads is described. In one embodiment, a method for processing a substrate includes providing a single substrate to a polishing station adapted to process a plurality of substrates on a single polishing pad using at least a first carrier head and a second carrier head, retaining the single substrate in the first carrier head while the second carrier head remains substrate-free, urging the first carrier head and the second carrier head toward a polishing surface of the polishing pad; and providing relative movement between the polishing pad and the first carrier head.

2. 发明申请

WO2014018027A1 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2014018027A1
公开(公告)日：2014-01-30
申请号：PCT/US2012/048050
申请日：2012-07-25
申请人： APPLIED MATERIALS, INC. , XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
发明人： XU, Kun , ZHANG, Jimin , MAI, David H. , JEW, Stephen , SHEN, Shih-Haur Walters , WANG, Zhihong , OSTERHELD, Thomas H. , TU, Wen-Chiang , LAM, Gary Ka Ho , KITAJIMA, Tomohiko
IPC分类号： H01L21/304
CPC分类号： B24B37/015 , H01L21/3212
摘要： Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
摘要翻译：提供半导体衬底的化学机械抛光（CMP）的方法，更具体地说，涉及这种化学机械抛光时的温度控制。一方面，该方法包括在抛光过程中用抛光表面抛光衬底以去除一部分导电材料，在抛光过程中重复地监测抛光表面的温度，并将抛光表面暴露于速率骤冷过程响应于所监测的温度，以便在抛光过程中达到监测温度的目标值。

3. 发明申请

WO2012030475A2 ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光中同一厚度多种基材厚度的终点控制
公开(公告)号：WO2012030475A2
公开(公告)日：2012-03-08
申请号：PCT/US2011/046660
申请日：2011-08-04
申请人： APPLIED MATERIALS, INC. , DUBOUST, Alain , JEW, Stephen , MAI, David H. , TRAN, Huyen , TU, Wen-Chiang , SHEN, Shih-Haur , ZHANG, Jimin , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , WANG, Zhihong
发明人： DUBOUST, Alain , JEW, Stephen , MAI, David H. , TRAN, Huyen , TU, Wen-Chiang , SHEN, Shih-Haur , ZHANG, Jimin , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , WANG, Zhihong
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first prepolish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一基材的第一预期所需抛光时间与第二基材的第二预期所需抛光时间之间的差异是使用第一预先抛光厚度和第二预抛光厚度测量的，在线计量站。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差确定初始阶段的持续时间。在抛光操作开始时的初始阶段，对第一基板和第二基板中的任一者施加压力的期望抛光时间较小，同时对第一基板和第二基板中的任一者施加压力预计需要更长的抛光时间。在初始阶段之后，对第一基板和第二基板施加压力。

4. 发明申请

WO2011152935A2 CONTROL OF OVERPOLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光过程中多个基体在同一板上的过度控制
公开(公告)号：WO2011152935A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/034210
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , ZHANG, Jimin , CARLSSON, Ingemar , JEW, Stephen , SWEDEK, Boguslaw A.
发明人： ZHANG, Jimin , CARLSSON, Ingemar , JEW, Stephen , SWEDEK, Boguslaw A.
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12
摘要： A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.
摘要翻译：抛光方法包括在同一抛光垫上同时抛光两个基板，第一基板和第二基板。存储默认的过度抛光时间，并且现场监控系统监控两个基板。原位监测系统还分别确定第一和第二基底的第一抛光终点时间和第二抛光终点时间。抛光方法还包括计算过度抛光停止时间，其中抛光停止时间在第一抛光终点时间加上默认过度抛光时间与第二抛光终点时间加上默认过度抛光时间之间。第一衬底的抛光继续经过第一抛光终点时间，并且第二衬底的抛光继续经过第二抛光终点时间。在抛光停止时间同时停止第一基板和第二基板的抛光。

5. 发明申请

WO2010053804A2 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：多晶化学机械抛光的终点控制
公开(公告)号：WO2010053804A2
公开(公告)日：2010-05-14
申请号：PCT/US2009/062433
申请日：2009-10-28
申请人： APPLIED MATERIALS, INC. , ZHANG, Jimin , OSTERHELD, Thomas H. , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , JEW, Stephen
发明人： ZHANG, Jimin , OSTERHELD, Thomas H. , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , JEW, Stephen
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/04
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光设备中同时抛光基板。每个基板具有可通过独立变化的抛光参数独立控制的抛光速率。利用原位监测系统在抛光期间从每个基板获取随每个基板的厚度而变化的测量数据。根据测量数据确定每个衬底在目标时间具有的投影厚度。调节至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板在目标时间具有比未经调节更接近相同的厚度。

6. 发明申请

WO2010126902A2 TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光温度控制
公开(公告)号：WO2010126902A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/032609
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , XU, Kun , ZHANG, Jimin , JEW, Stephen , OSTERHELD, Thomas H.
发明人： XU, Kun , ZHANG, Jimin , JEW, Stephen , OSTERHELD, Thomas H.
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B55/02 , B24B37/015
摘要： A chemical mechanical polishing apparatus including a platen for holding a pad having a polishing surface, a subsystem for holding a substrate and the polishing surface together during a polishing step, and a temperature sensor oriented to measure a temperature of the polishing surface, wherein the subsystem accepts the temperature measured by the sensor and is programmed to vary a polishing process parameter in response to the measured temperature. In an aspect, a chemical mechanical polishing apparatus having a platen for holding a pad having a polishing surface, a fluid delivery system for transporting a fluid from a source to the polishing surface, and a temperature controller which during operation controls the temperature of the fluid transported by the delivery system.
摘要翻译：一种化学机械抛光装置，包括用于在抛光步骤期间将用于保持具有抛光表面的焊盘的垫板，用于保持基板和抛光表面的子系统以及用于测量抛光表面的温度的温度传感器，其中所述子系统接受由传感器测量的温度，并被编程以响应于测量的温度来改变抛光工艺参数。一方面，一种具有用于保持具有抛光表面的焊盘的压板的化学机械抛光装置，用于将流体从源传送到抛光表面的流体输送系统以及在操作期间控制流体温度的温度控制器由运送系统运输。

7. 发明申请

WO2022132371A1 CHEMICAL MECHANICAL POLISHING WITH APPLIED MAGNETIC FIELD 审中-公开
公开(公告)号：WO2022132371A1
公开(公告)日：2022-06-23
申请号：PCT/US2021/059751
申请日：2021-11-17
申请人： APPLIED MATERIALS, INC.
发明人： WANG, Xingfeng , TANG, Jianshe , LIU, Feng Q. , GAGE, David M. , JEW, Stephen
IPC分类号： B24B37/30 , B24B1/00 , B24B37/20 , H01L21/67
摘要： A polishing station for polishing a substrate using a polishing slurry is disclosed. The polishing station includes a substrate carrier having a substrate receiving surface and a rotatable platen having a polishing pad disposed on a platen surface, where the polishing pad has a polishing surface facing the substrate-receiving surface. The polishing station includes an electromagnetic assembly disposed over the platen surface. The electromagnetic assembly includes an array of electromagnetic devices that are each operable to generate a magnetic field that is configured to pass through the polishing surface. The magnetic fields generated by the array of electromagnetic devices are oriented and configured to induce an electromagnetic force on a plurality of charged particles disposed in a polishing slurry disposed on the polishing surface. The applied magnetic field is configured to induce movement of the plurality of charged particles in a direction parallel or orthogonal to the polishing surface.

8. 发明申请

WO2017222999A1 SLURRY DISTRIBUTION DEVICE FOR CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光用浆液分配装置
公开(公告)号：WO2017222999A1
公开(公告)日：2017-12-28
申请号：PCT/US2017/038184
申请日：2017-06-19
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yen-Chu , JEW, Stephen , TANG, Jianshe , WU, Haosheng , CHANG, Shou-Sung , BUTTERFIELD, Paul D. , FISHER, Alexander John , KIM, Bum Jick
IPC分类号： B24B57/02 , B24B37/04 , B24B37/20 , B24B37/32 , H01L21/306
CPC分类号： B24B57/02 , B24B37/10 , H01L21/67075 , H01L21/6708
摘要： An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a first barrier positioned before the portion of the polishing surface and configured to block used polishing liquid from reaching the portion of the polishing surface.
摘要翻译：用于化学机械抛光的设备包括具有用于支撑抛光垫的表面的可旋转台板，用于保持与抛光垫接触的基板的载体头以及抛光液分配系统。抛光液体分配系统包括：分配器，其被定位成将抛光液体输送到抛光垫的抛光表面的一部分;以及第一隔板，其位于抛光表面的部分之前并且被配置成阻挡使用过的抛光液体到达抛光表面。

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