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1. 发明申请

WO2005059200A1 THERMAL CHEMICAL VAPOR DEPOSITION OF SILICON NITRIDE 审中-公开
标题翻译：硅酸盐的热化学蒸气沉积
公开(公告)号：WO2005059200A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/027584
申请日：2004-08-25
申请人： APPLIED MATERIALS, INC. , IYER, R. Suryanarayanan , SEUTTER, Sean M. , SMITH, Jacob W. , DIBELLO, Gregory W. , TAM, Alexander , TRAN, Binh , TANDON, Sanjeev
发明人： IYER, R. Suryanarayanan , SEUTTER, Sean M. , SMITH, Jacob W. , DIBELLO, Gregory W. , TAM, Alexander , TRAN, Binh , TANDON, Sanjeev
IPC分类号： C23C16/34
CPC分类号： C23C16/4557 , C23C16/345 , C23C16/4412 , C23C16/45565
摘要： Apparatus comprising a processing region, a substrate support, a gas delivery system, a gas mixing region, a heating element positioned to heat an adapter ring fastened to a face plate to a desired temperature, and a temperature controlled exhaust system. Also, a method and apparatus for vaporizing bis(tertiary-butylamino)silane, flowing the bis(tertiary-butylamino)silane and ammonia into a processing chamber, combining the two reactants having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, and flowing the bis(tertiary-butylamino)silane through a gas distribution plate into a processing region.
摘要翻译：设备包括处理区域，基板支撑件，气体输送系统，气体混合区域，加热元件，其被定位成将紧固到面板的适配器环加热到所需温度，以及温度控制的排气系统。另外，一种使双（叔丁基氨基）硅烷蒸发的方法和装置，使双（叔丁基氨基）硅烷和氨流入处理室，将具有由适配环和至少两个阻挡板，加热适配环，并使双（叔丁基氨基）硅烷通过气体分配板流入加工区域。

2. 发明申请

WO2006138131A1 METHOD FOR SILICON NITRIDE CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：硝酸化学气相沉积方法
公开(公告)号：WO2006138131A1
公开(公告)日：2006-12-28
申请号：PCT/US2006/022192
申请日：2006-06-07
申请人： APPLIED MATERIALS, INC. , IYER, R. Suryanarayanan , SEUTTER, Sean M. , TANDON, Sanjeev , SANCHEZ, Errol Antonio C. , WANG, Shulin
发明人： IYER, R. Suryanarayanan , SEUTTER, Sean M. , TANDON, Sanjeev , SANCHEZ, Errol Antonio C. , WANG, Shulin
IPC分类号： C23C16/34
CPC分类号： H01L21/0217 , C23C16/345 , H01L21/02208 , H01L21/02271 , H01L21/3185
摘要： Embodiments of the invention generally provide a method for depositing a silicon nitride containing layer on a substrate. The method includes heating a substrate disposed in a processing chamber to a temperature of less than about 650° C, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a silicon nitride containing layer on a substrate. In one embodiment, the silicon-containing gas contains at least one of an aminodisilane compound, a silylazide compound, a silylhydrazine compound, or an alkylsilazane compound. In one example, the aminodisilane compound has the chemical formula of R 2 NsiR’ 2 SiR’ 2 NR 2 , the silylazide compound has the chemical formula of R’ 3 SiNRNR 2 , and the silylhydrazine compound has the chemical formula of R' 3 SiNRNR 2 , wherein each R and R' independently contain hydrogen, halogen, alkyl, alkene, alkyne, aliphatic alkyl, cyclical alkyl, aromatic, organosilane, alkylamino, or a cyclic group containing nitrogen or silicon.
摘要翻译：本发明的实施方案通常提供了一种在衬底上沉积含氮化硅的层的方法。该方法包括将设置在处理室中的基板加热到低于约650℃的温度，使含氮气体流入处理室，使含硅气体流入处理室，并沉积含有层。在一个实施方案中，含硅气体包含氨基二硅烷化合物，硅烷基叠氮化合物，甲硅烷基肼化合物或烷基硅氮烷化合物中的至少一种。在一个实例中，氨基二硅烷化合物具有化学式R 2 N 2 NR 2 SiR 2 2 NR 2 N 2 ，硅烷基叠氮化合物具有化学式R'3 SiNRNR 2 N，并且甲硅烷基肼化合物具有化学式R'3 SiNRNR 2，其中每个R和R'独立地含有氢，卤素，烷基，烯烃，炔烃，脂族烷基，环烷基，芳族，有机硅烷，烷基氨基或含氮或硅的环状基团。

3. 发明申请

WO2006138103A2 METHOD FOR SILICON BASED DIELECTRIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：基于硅的介电化学蒸气沉积方法
公开(公告)号：WO2006138103A2
公开(公告)日：2006-12-28
申请号：PCT/US2006/021787
申请日：2006-06-05
申请人： APPLIED MATERIALS, INC. , WANG, Yaxin , MAEDA, Yuji , MELE, Thomas C. , SEUTTER, Sean M. , TANDON, Sanjeev , IYER, R. Suryanarayanan
发明人： WANG, Yaxin , MAEDA, Yuji , MELE, Thomas C. , SEUTTER, Sean M. , TANDON, Sanjeev , IYER, R. Suryanarayanan
IPC分类号： H01L21/471
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3-N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，将含硅材料膜沉积在基片上的方法包括使含有氮和碳的化学物质流入沉积室，将含有硅 - 氮键的含硅源化学物质流入处理室，并加热该衬底放置在室内至小于约550摄氏度的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

4. 发明申请

WO2007044145A3 METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
公开(公告)号：WO2007044145A3
公开(公告)日：2007-04-19
申请号：PCT/US2006/033470
申请日：2006-08-29
申请人： APPLIED MATERIALS, INC. , IYER, R. Suryanarayanan , SMITH, Jacob W. , SEUTTER, Sean M. , ZHANG, Kangzhan , LAM, Andrew M. , CUNNINGHAM, Kevin L. , RAMACHANDRAN, Phani
发明人： IYER, R. Suryanarayanan , SMITH, Jacob W. , SEUTTER, Sean M. , ZHANG, Kangzhan , LAM, Andrew M. , CUNNINGHAM, Kevin L. , RAMACHANDRAN, Phani
IPC分类号： C23C16/00
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

5. 发明申请

WO2008074016A3 METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SIBN DEPOSITION 审中-公开
公开(公告)号：WO2008074016A3
公开(公告)日：2008-06-19
申请号：PCT/US2007/087473
申请日：2007-12-13
申请人： APPLIED MATERIALS, INC. , ZHANG, Kangzhan , SEUTTER, Sean M. , GRAYSON, Jacob , IYER, R. Suryanarayanan
发明人： ZHANG, Kangzhan , SEUTTER, Sean M. , GRAYSON, Jacob , IYER, R. Suryanarayanan
IPC分类号： H01L21/00
摘要： A method and apparatus for depositing silicon boron nitride films is provided. The apparatus comprises a chamber, a gas mixing block connected to the chamber, and separate boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor gas line systems that are connected to the gas mixing block. Methods of depositing a silicon boron nitride film in the apparatus are provided. In another aspect, a method of depositing a silicon boron nitride film includes reacting a boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor in a chamber, wherein a ratio of the flow rate of the nitrogen-containing precursor into the chamber to the flow rate of the boron-containing precursor is greater than or equal to about 10.

6. 发明申请

WO2020167393A1 GATE CONTACT OVER ACTIVE PROCESSES 审中-公开
公开(公告)号：WO2020167393A1
公开(公告)日：2020-08-20
申请号：PCT/US2020/012927
申请日：2020-01-09
申请人： APPLIED MATERIALS, INC.
发明人： THAREJA, Gaurav , KASHEFIZADEH, Keyvan , WANG, Xikun , WANG, Anchuan , NATARAJAN, Sanjay , SEUTTER, Sean M. , WU, Dong
IPC分类号： H01L29/417 , H01L29/66 , H01L29/78
摘要： A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a first structure on the substrate in a processing system without breaking vacuum, depositing a third dielectric material over the first structure, and forming a planarized surface of the gates and a surface of the third dielectric material that is disposed over the first structure. The forming of the first structure includes forming trenches by removing second portions of the second dielectric material within each opening, forming recessed active regions in the trenches by partially filling the trenches with a second metal, forming a liner over each recessed active region, and forming a metal cap layer over each liner.

7. 发明公开

EP1685272A1 THERMAL CHEMICAL VAPOR DEPOSITION OF SILICON NITRIDE 有权
标题翻译：热化学气相淀积设备
公开(公告)号：EP1685272A1
公开(公告)日：2006-08-02
申请号：EP04782141.8
申请日：2004-08-25
申请人： APPLIED MATERIALS, INC.
发明人： IYER, R. Suryanarayanan , SEUTTER, Sean M. , SMITH, Jacob W. , DIBELLO, Gregory W. , TAM, Alexander , TRAN, Binh , TANDON, Sanjeev
IPC分类号： C23C16/34 , C23C16/455
CPC分类号： C23C16/4557 , C23C16/345 , C23C16/4412 , C23C16/45565
摘要： Apparatus comprising a processing region, a substrate support, a gas delivery system, a gas mixing region, a heating element positioned to heat an adapter ring fastened to a face plate to a desired temperature, and a temperature controlled exhaust system. Also, a method and apparatus for vaporizing bis(tertiary-butylamino)silane, flowing the bis(tertiary-butylamino)silane and ammonia into a processing chamber, combining the two reactants having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, and flowing the bis(tertiary-butylamino)silane through a gas distribution plate into a processing region.

8. 发明授权

EP1685272B1 THERMAL CVD APPARATUS 有权
标题翻译：热化学气相淀积设备
公开(公告)号：EP1685272B1
公开(公告)日：2008-11-26
申请号：EP04782141.8
申请日：2004-08-25
申请人： APPLIED MATERIALS, INC.
发明人： IYER, R. Suryanarayanan , SEUTTER, Sean M. , SMITH, Jacob W. , DIBELLO, Gregory W. , TAM, Alexander , TRAN, Binh , TANDON, Sanjeev
IPC分类号： C23C16/34 , C23C16/455
CPC分类号： C23C16/4557 , C23C16/345 , C23C16/4412 , C23C16/45565
摘要： Apparatus comprising a processing region, a substrate support, a gas delivery system, a gas mixing region, a heating element positioned to heat an adapter ring fastened to a face plate to a desired temperature, and a temperature controlled exhaust system. Also, a method and apparatus for vaporizing bis(tertiary-butylamino)silane, flowing the bis(tertiary-butylamino)silane and ammonia into a processing chamber, combining the two reactants having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, and flowing the bis(tertiary-butylamino)silane through a gas distribution plate into a processing region.

9. 发明申请

WO2020257144A1 DEUTERIUM-CONTAINING FILMS 审中-公开
公开(公告)号：WO2020257144A1
公开(公告)日：2020-12-24
申请号：PCT/US2020/037849
申请日：2020-06-16
申请人： APPLIED MATERIALS, INC.
发明人： SEUTTER, Sean M. , PARK, Mun Kyu , LE, Hien M. , CHUANG, Chih-Chiang
IPC分类号： H01L21/02 , C23C16/458 , C23C16/511 , C23C16/455 , H01J37/32
摘要： Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

10. 发明申请

WO2022010872A1 ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE CONTROL 审中-公开
公开(公告)号：WO2022010872A1
公开(公告)日：2022-01-13
申请号：PCT/US2021/040476
申请日：2021-07-06
申请人： APPLIED MATERIALS, INC.
发明人： PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , SEUTTER, Sean M. , GONDHALEKAR, Sudhir R. , BOYD, Wendell Glenn , RAMAMURTHI, Badri , ATHANI, Shekhar , KALAL, Anil Kumar , PINSON, Jay Dee, II
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H01J37/32 , H01J2237/2007 , H01J37/32724 , H01L21/67109 , H01L21/6833 , H01L21/6875
摘要： Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

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