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1. 发明申请

WO2010099007A1 IN SITU PLASMA CLEAN FOR REMOVAL OF RESIDUE FROM PEDESTAL SURFACE WITHOUT BREAKING VACUUM 审中-公开
标题翻译：在没有破裂真空的基础表面去除残留物的现场等离子体清洁
公开(公告)号：WO2010099007A1
公开(公告)日：2010-09-02
申请号：PCT/US2010/024404
申请日：2010-02-17
申请人： APPLIED MATERIALS, INC. , GREEN, Richard J. , TSAI, Cheng-Hsiung , ROY, Shambhu N. , BAJAJ, Puneet , LOO, David H.
发明人： GREEN, Richard J. , TSAI, Cheng-Hsiung , ROY, Shambhu N. , BAJAJ, Puneet , LOO, David H.
IPC分类号： C23C14/00 , C23C14/54 , C23C14/34
CPC分类号： H01J37/32862 , C23C14/50 , C23C14/564 , H01J37/32642 , H01J37/32715 , H01J37/3408
摘要： Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
摘要翻译：提供了用于沉积室的原位等离子体清洗的方法和装置。在一个实施例中，提供了一种用于在不破坏真空的情况下等离子体清洁沉积室的方法。该方法包括将基板定位在设置在室中的基座上并由电浮动沉积环外接，在基板上沉积金属膜和在室中沉积环，使沉积在沉积环上的金属膜接地而不破坏真空，以及在腔室中形成的等离子体从室中除去污染物，而不对接地的沉积环上的金属膜进行再溅射，而不破坏真空。

2. 发明申请

WO2008079722A2 NON-CONTACT PROCESS KIT 审中-公开
标题翻译：非接触式工艺包
公开(公告)号：WO2008079722A2
公开(公告)日：2008-07-03
申请号：PCT/US2007/087466
申请日：2007-12-13
申请人： APPLIED MATERIALS, INC. , BROWN, Karl , BAJAJ, Puneet
发明人： BROWN, Karl , BAJAJ, Puneet
IPC分类号： C23C14/30
CPC分类号： C23C14/564 , C23C14/50 , H01L21/68735
摘要： A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.
摘要翻译：提供了一种用于物理气相沉积（PVD）室的工艺试剂盒，以及具有非接触式工艺试剂盒的PVD室。在一个实施例中，处理套件包括大致圆柱形的屏蔽件，其具有基本平坦的圆柱形主体，从主体向下延伸的至少一个细长圆柱形环以及从主体的上表面向上延伸的安装部分。在另一个实施例中，处理套件包括大致圆柱形的沉积环。沉积环包括基本上平坦的圆柱体，至少一个向下延伸的u通道，其耦合到主体的外部部分，从主体的内部区域的上表面向上延伸的内壁，以及延伸的基板支撑凸缘从内壁径向向内。

3. 发明申请

WO2008052047A3 VORTEX CHAMBER LIDS FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2008052047A3
公开(公告)日：2008-05-02
申请号：PCT/US2007/082369
申请日：2007-10-24
申请人： APPLIED MATERIALS, INC. , WU, Dien-yeh , BAJAJ, Puneet , YUAN, Xiaoxiong , KIM, Steven, H. , CHU, Schubert, S. , MA, Paul, F. , AUBUCHON, Joseph, F.
发明人： WU, Dien-yeh , BAJAJ, Puneet , YUAN, Xiaoxiong , KIM, Steven, H. , CHU, Schubert, S. , MA, Paul, F. , AUBUCHON, Joseph, F.
IPC分类号： C23C16/00 , C23C16/44
摘要： Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates (210) during atomic layer deposition processes. In one embodiment, a chamber (200) for processing substrates (210) is provided which includes a chamber (200) lid assembly (232) containing a centrally positioned gas dispersing channel (234), wherein a converging portion of the gas dispersing channel (234) tapers towards a central axis of the gas dispersing channel (234) and a diverging portion of the gas dispersing channel (234) tapers away from the central axis. The chamber (200) lid assembly (232) further contains a tapered bottom surface (260) extending from the diverging portion of the gas dispersing channel (234) to a peripheral portion of the chamber (200) lid assembly (232), wherein the tapered bottom surface (260) is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets (236a,b) within the converging portion of the gas dispersing channel (234) and positioned to provide a circular gas flow through the gas dispersing channel (234).

4. 发明申请

WO2014099252A1 WAFER EDGE PROTECTION AND EFFICIENCY USING INERT GAS AND RING 审中-公开
标题翻译： WAFER边缘保护和使用INERT气体和环的效率
公开(公告)号：WO2014099252A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/071309
申请日：2013-11-21
申请人： APPLIED MATERIALS, INC.
发明人： LE, Dung Huu , SCOTT, Graeme Jamieson , DINEV, Jivko , YALAMANCHILI, Madhava Rao , SIRAJUDDIN, Khalid Mohiuddin , BAJAJ, Puneet , SINGH, Saravjeet
IPC分类号： H01L21/02
CPC分类号： H01L21/3065 , H01J37/321 , H01J37/32623 , H01L21/67069
摘要： Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate.
摘要翻译：本发明的实施例一般涉及用于等离子体蚀刻的装置和方法。在一个实施例中，该设备包括具有远离环的内壁的环形台阶并且设置在等离子体处理室中的基板支撑件上的处理环。在工艺环和放置在衬底支架上的衬底之间形成间隙。环形台阶的内表面具有约3mm至约6mm的高度。在操作期间，引入边缘排除气体流过间隙并沿着内表面，因此阻止等离子体进入基板边缘附近的空间。

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