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1. 发明申请

WO2012177716A2 N-METAL FILM DEPOSITION WITH INITIATION LAYER 审中-公开
标题翻译：带有起始层的N金属膜沉积
公开(公告)号：WO2012177716A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/043278
申请日：2012-06-20
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih, Chung , CHANG, Mei
发明人： GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih, Chung , CHANG, Mei
IPC分类号： H01L21/31 , H01L21/205 , H01L21/336 , H01L29/78
CPC分类号： H01L21/28088 , H01L21/02697 , H01L29/4966
摘要： Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAIC. These initiation layers can be used to deposit TaC x .
摘要翻译：提供了将N-金属沉积到基底上的方法。方法包括首先沉积起始层。起始层可以包括钴，钽，镍，钛或TaAIC。这些起始层可用于沉积TaCx。

2. 发明申请

WO2013103379A2 N-METAL FILM DEPOSITION WITH INITIATION LAYER 审中-公开
标题翻译：带有起始层的N金属膜沉积
公开(公告)号：WO2013103379A2
公开(公告)日：2013-07-11
申请号：PCT/US2012/043256
申请日：2012-06-20
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , CHANG, Mei
发明人： GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , CHANG, Mei
IPC分类号： H01L21/31 , H01L21/336 , H01L29/78 , H01L21/205
CPC分类号： H01L21/28088
摘要： Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
摘要翻译：提供了将N-金属沉积到基底上的方法。一些方法包括在衬底上提供TaM或TiM层的起始层，其中M选自铝，碳，贵金属，镓，硅，锗及其组合; 以及将具有TaM或TiM层的衬底暴露于包括用还原剂浸泡衬底的表面以提供经处理的起始层的处理工艺。

3. 发明申请

WO2013074339A1 DOPING ALUMINUM IN TANTALUM SILICIDE 审中-公开
标题翻译：硅酸铝中的铝合金
公开(公告)号：WO2013074339A1
公开(公告)日：2013-05-23
申请号：PCT/US2012/063809
申请日：2012-11-07
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , GANGULI, Seshadri , CHEN, Shih Chung , NOORI, Atif , MAHAJANI, Maitreyee , CHANG, Mei
发明人： LU, Xinliang , GANGULI, Seshadri , CHEN, Shih Chung , NOORI, Atif , MAHAJANI, Maitreyee , CHANG, Mei
IPC分类号： H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Provided are methods of providing aluminum-doped TaSi x films. Doping TaSi x films allows for the tuning of the work function value to make the TaSi x film better suited as an N- metal for NMOS applications. One such method relates to soaking a TaSi x film with an aluminum-containing compound. Another method relates to depositing a TaSi x film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSi x film using tantalum, aluminum and silicon precursors.
摘要翻译：提供了提供掺铝的TaSix膜的方法。掺杂TaSix薄膜允许调整功函数值，使TaSix薄膜更适合用作NMOS应用的N-金属。一种这样的方法涉及用含铝化合物浸泡TaSix膜。另一种方法涉及沉积TaSix膜，用含铝化合物浸泡并重复较厚的膜。第三种方法涉及使用钽，铝和硅前体沉积掺铝的TaSix膜。

4. 发明申请

WO2013163021A1 METHODS FOR MANUFACTURING METAL GATES 审中-公开
标题翻译：制造金属门的方法
公开(公告)号：WO2013163021A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037321
申请日：2013-04-19
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , GANGULI, Seshadri , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , LEI, Yu , FU, Xinyu , TANG, Wei , Gandikota, Srinivas
发明人： LU, Xinliang , GANGULI, Seshadri , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , LEI, Yu , FU, Xinyu , TANG, Wei , Gandikota, Srinivas
IPC分类号： H01L21/8238 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

5. 发明申请

WO2011139642A2 NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS 审中-公开
标题翻译： NMOS金属栅材料，制造方法和使用基于金属的前驱体的CVD和ALD工艺的设备
公开(公告)号：WO2011139642A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/033820
申请日：2011-04-25
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , GANDIKOTA, Srinivas , LEI, Yu , LU, Xinliang , YU, Sang Ho , KIM, Hoon , MA, Paul, F. , CHANG, Mei , MAHAJANI, Maitreyee , LIU, Patricia, M.
发明人： GANGULI, Seshadri , GANDIKOTA, Srinivas , LEI, Yu , LU, Xinliang , YU, Sang Ho , KIM, Hoon , MA, Paul, F. , CHANG, Mei , MAHAJANI, Maitreyee , LIU, Patricia, M.
IPC分类号： H01L21/31 , H01L21/336 , H01L29/78 , H01L21/205
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX Y , wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

6. 发明申请

WO2012116259A2 DRY CHEMICAL CLEANING FOR GATE STACK PREPARATION 审中-公开
标题翻译：用于门体堆叠制备的干燥化学清洁
公开(公告)号：WO2012116259A2
公开(公告)日：2012-08-30
申请号：PCT/US2012/026459
申请日：2012-02-24
申请人： APPLIED MATERIALS, INC. , NOORI, Atif , MAHAJANI, Maitreyee , LIU, Patricia M. , HUNG, Steven , SATO, Tatsuya E. , CHANG, Mei
发明人： NOORI, Atif , MAHAJANI, Maitreyee , LIU, Patricia M. , HUNG, Steven , SATO, Tatsuya E. , CHANG, Mei
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/28194 , C23C16/0245 , H01J37/32091 , H01J37/3244 , H01L21/02046 , H01L21/02301 , H01L21/28238 , H01L21/31116 , H01L21/67207 , H01L29/517
摘要： A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface.
摘要翻译：公开了一种包括干蚀刻工艺，随后是高k电介质的沉积工艺的沉积工艺。干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。气体混合物通电以形成反应性气体的等离子体，其与衬底上的氧化物反应，形成薄膜。将衬底加热以蒸发薄膜并暴露衬底表面。基底表面基本上不含氧化物。然后沉积在衬底表面上形成一层。

7. 发明申请

WO2007024720A2 PRETREATMENT PROCESSES WITHIN A BATCH ALD REACTOR 审中-公开
标题翻译：在BATCH ALD反应器中的预处理过程
公开(公告)号：WO2007024720A2
公开(公告)日：2007-03-01
申请号：PCT/US2006/032408
申请日：2006-08-17
申请人： APPLIED MATERIALS, INC. , MAHAJANI, Maitreyee
发明人： MAHAJANI, Maitreyee
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/0218 , C23C16/405 , C23C16/45531 , C23C16/45546 , H01L21/3142
摘要： Embodiments of the invention provide methods for forming a material on a substrate which includes exposing a plurality of substrates within a batch process chamber to a first oxidizing gas during a pretreatment process, exposing the substrates sequentially to a precursor and a second oxidizing gas during an ALD cycle and repeating the ALD cycle to form a material on the substrates. In one example, a hafnium precursor is used during the ALD process to form a hafnium-containing material, such as hafnium oxide. In another example, the first and second oxidizing gases are the same oxidizing gases. In another example, the first and second oxidizing gases are different oxidizing gases, such that the pretreatment process contains ozone and the ALD process contains water vapor.
摘要翻译：本发明的实施例提供了在衬底上形成材料的方法，其包括在预处理过程中将批处理室内的多个衬底暴露于第一氧化气体，在ALD期间将衬底依次暴露于前体和第二氧化气体循环并重复ALD循环以在基底上形成材料。在一个实例中，在ALD工艺期间使用铪前体以形成含铪的材料，例如氧化铪。在另一个实例中，第一和第二氧化气体是相同的氧化气体。在另一个实例中，第一和第二氧化气体是不同的氧化气体，使得预处理过程含有臭氧，并且ALD工艺含有水蒸汽。

8. 发明申请

WO2012057889A1 ATOMIC LAYER DEPOSITION FILM WITH TUNABLE REFRACTIVE INDEX AND ABSORPTION COEFFICIENT AND METHODS OF MAKING 审中-公开
标题翻译：具有柔性折射率指数和吸收系数的原子层沉积膜及其制备方法
公开(公告)号：WO2012057889A1
公开(公告)日：2012-05-03
申请号：PCT/US2011/045728
申请日：2011-07-28
申请人： APPLIED MATERIALS, INC. , MAHAJANI, Maitreyee
发明人： MAHAJANI, Maitreyee
IPC分类号： C23C16/44 , C23C16/448 , C23C16/50 , H01L21/205
CPC分类号： C23C16/308 , C23C16/45531 , C23C16/45542 , H01L21/0214 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02315
摘要： Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process. The substrate is then exposed sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species sufficient to form at least a partial layer of one or more of silicon nitride or silicon on the substrate during a second atomic layer deposition process. The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film.
摘要翻译：描述了形成混合氧化硅/氮化硅膜或混合氧化硅/硅膜中的一种或多种的原子层沉积方法，其中将衬底依次暴露于包含硅物质的第一反应气体和包含氧原子在第一原子层沉积工艺期间在衬底上形成至少一部分氧化硅层。然后将衬底依次暴露于包含硅物质的第三反应气体和包含足以在第二原子层沉积过程中在衬底上形成至少部分氮化硅或硅的部分层的物质的第四反应气体。可以重复该过程多次以沉积混合氧化硅/氮化硅膜和混合氧化硅/硅膜中的一种或多种。

9. 发明申请

WO2012154789A2 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILMS 审中-公开
标题翻译：制造高介电常数膜的方法
公开(公告)号：WO2012154789A2
公开(公告)日：2012-11-15
申请号：PCT/US2012/037030
申请日：2012-05-09
申请人： APPLIED MATERIALS, INC. , SATO, Tatsuya E. , MAHAJANI, Maitreyee
发明人： SATO, Tatsuya E. , MAHAJANI, Maitreyee
IPC分类号： H01L21/31 , H01L29/78 , H01L21/336 , H01L21/8238
CPC分类号： H01L21/0228 , H01L21/02046 , H01L21/02052 , H01L21/02181 , H01L21/02301 , H01L21/28088 , H01L21/28194 , H01L21/324 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.
摘要翻译：提供了在基底上沉积高k电介质膜的方法。这些方法包括在清洁表面之后退火衬底以产生悬挂键并将高k电介质膜沉积在退火表面上。

10. 发明申请

WO2012106600A9 IN SITU VAPOR PHASE SURFACE ACTIVATION OF SIO2 审中-公开
公开(公告)号：WO2012106600A9
公开(公告)日：2012-08-09
申请号：PCT/US2012/023778
申请日：2012-02-03
申请人： APPLIED MATERIALS, INC. , SATO, Tatsuya, E. , THOMPSON, David , ANTHIS, Jeffrey, W. , ZUBKOV, Vladimir , VERHAVERBEKE, Steven , GOUK, Roman , MAHAJANI, Maitreyee , LIU, Patricia, M. , BEVAN, Malcolm, J.
发明人： SATO, Tatsuya, E. , THOMPSON, David , ANTHIS, Jeffrey, W. , ZUBKOV, Vladimir , VERHAVERBEKE, Steven , GOUK, Roman , MAHAJANI, Maitreyee , LIU, Patricia, M. , BEVAN, Malcolm, J.
IPC分类号： H01L21/205 , H01L21/316
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

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