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1. 发明申请

WO2010059701A2 TEMPERATURE UNIFORMITY MEASUREMENT DURING THERMAL PROCESSING 审中-公开
标题翻译：热处理过程中的温度均匀性测量
公开(公告)号：WO2010059701A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/064956
申请日：2009-11-18
申请人： APPLIED MATERIALS, INC. , ADERHOLD, Wolfgang , JALLEPALLY, Ravi , RAMACHANDRAN, Balasubramanian , HUNTER, Aaron M. , ILIOPOULOS, Ilias
发明人： ADERHOLD, Wolfgang , JALLEPALLY, Ravi , RAMACHANDRAN, Balasubramanian , HUNTER, Aaron M. , ILIOPOULOS, Ilias
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向差分度量分布的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分度量分布的方法和系统。应用径向和方位差分度量分布图来调整参考度量分布图以提供处理室的虚拟度量。虚拟计量被用于控制处理室的性能。

2. 发明申请

WO2005045905A1 TAILORED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：定制温度均匀
公开(公告)号：WO2005045905A1
公开(公告)日：2005-05-19
申请号：PCT/US2004/034811
申请日：2004-10-20
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , RANISH, Joseph, M. , JALLEPALLY, Ravi , RAMAMURTHY, Sundar , ACHUTHARAMAN, Raman , HAAS, Brian , HUNTER, Aaron
发明人： RAMACHANDRAN, Balasubramanian , RANISH, Joseph, M. , JALLEPALLY, Ravi , RAMAMURTHY, Sundar , ACHUTHARAMAN, Raman , HAAS, Brian , HUNTER, Aaron
IPC分类号： H01L21/00
CPC分类号： H01L21/67103
摘要： Method and apparatus for obtaining a tailored heat transfer profile in a chamber housing a microprocessor manufacturing process, including estimating heat transfer properties of the chamber; estimating heat absorptive properties of a wafer; adjusting the physical characteristics of the chamber to correct the heat transfer properties; and utilizing the chamber for manufacturing microprocessors.
摘要翻译：用于在容纳微处理器制造过程的腔室中获得定制的传热轮廓的方法和装置，包括估计腔室的传热特性; 估计晶片的吸热性能; 调整室的物理特性以校正传热性能; 并利用该腔室制造微处理器。

3. 发明申请

WO2007114987A2 ADAPTIVE CONTROL METHOD FOR RAPID THERMAL PROCESSING OF A SUBSTRATE 审中-公开
标题翻译：基板快速热处理的自适应控制方法
公开(公告)号：WO2007114987A2
公开(公告)日：2007-10-11
申请号：PCT/US2007/063482
申请日：2007-03-07
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph Michael , DIXIT, Tarpan , JENNINGS, Dean , RAMACHANDRAN, Balasubramanian , HUNTER, Aaron , ADERHOLD, Wolfgang , ADAMS, Bruce , CHANG, Wen Teh
发明人： RANISH, Joseph Michael , DIXIT, Tarpan , JENNINGS, Dean , RAMACHANDRAN, Balasubramanian , HUNTER, Aaron , ADERHOLD, Wolfgang , ADAMS, Bruce , CHANG, Wen Teh
IPC分类号： H04B7/185
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译：本发明一般涉及用于衬底的快速热处理（RTP）的方法。本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。控制算法的选择基于在热处理期间测量的衬底的光学性质。在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。

4. 发明申请

WO2006047062A2 METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS 审中-公开
标题翻译：用于热处理硅氧烷膜的低温色谱法的方法和装置
公开(公告)号：WO2006047062A2
公开(公告)日：2006-05-04
申请号：PCT/US2005/036082
申请日：2005-10-05
申请人： APPLIED MATERIALS, INC. , HUNTER, Aaron, Muir , RAMACHANDRAN, Balasubramanian , TANASA, Corina, Elena , RAMANUJAM, Rajesh, S. , DIXIT, Tarpan, T.
发明人： HUNTER, Aaron, Muir , RAMACHANDRAN, Balasubramanian , TANASA, Corina, Elena , RAMANUJAM, Rajesh, S. , DIXIT, Tarpan, T.
IPC分类号： A21B1/00 , A21B1/22 , F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system (110) including a transmission pyrometer (12) monitoring the temperature dependent absorption of the silicon wafer (32) for radiation from the RTP lamps (46) at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step (170) measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized (142). The transmission pyrometer may be used for closed loop control for thermal treatments below 500°C or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure (190) with a beam splitter (204) dividing radiation from the wafer.
摘要翻译：包括透射高温计（12）的快速热处理（RTP）系统（110），其以降低的功率水平监测用于来自RTP灯（46）的辐射的硅晶片（32）的温度依赖性吸收。创建了与晶圆和辐射灯温度相关的光电检测器光电流的非标准化值的查找表。校准步骤（170）测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流被相应地归一化（142）。传输高温计可用于低于500°C的热处理的闭环控制，或在预热阶段用于较高温度的过程，包括闭环控制中的辐射高温测定。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。辐射和透射高温计可以包括在分束器（204）的集成结构（190）中，分束器（204）分隔来自晶片的辐射。

5. 发明申请

WO2013016266A1 METHODS AND APPARATUS FOR DEPOSITION PROCESSES 审中-公开
标题翻译：沉积过程的方法和装置
公开(公告)号：WO2013016266A1
公开(公告)日：2013-01-31
申请号：PCT/US2012/047811
申请日：2012-07-23
申请人： APPLIED MATERIALS, INC. , COLLINS, Richard O. , RAMACHANDRAN, Balasubramanian , ZHU, Zuoming
发明人： COLLINS, Richard O. , RAMACHANDRAN, Balasubramanian , ZHU, Zuoming
IPC分类号： H01L21/683 , H01L21/205 , C23C16/458
CPC分类号： H01L21/68792 , C30B25/12 , H01L21/67115 , H01L21/68735 , H01L21/68742 , H01L21/6875 , H01L21/68785
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, the apparatus may include a ring to support a substrate in a position for processing, wherein the substrate is supported by a top side of the ring proximate a peripheral edge of the substrate such that a backside of the substrate, when present, is disposed over a central opening of the ring, a substantially planar member disposed below the ring, wherein substantially planar member includes plurality of slots, and a plurality of support arms which support the ring and the substantially planar member, wherein each support arm includes a terminal portion that supports the substantially planar member and extends through a respective one of the plurality of slots to support the ring
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，该装置可以包括用于将衬底支撑在用于处理的位置的环，其中衬底由靠近衬底的周边边缘的环的顶侧支撑，使得衬底的背面（当存在时）设置在所述环的中心开口上方，设置在所述环下方的基本上平面的构件，其中基本平坦的构件包括多个狭槽，以及支撑所述环和所述基本平坦构件的多个支撑臂，其中每个支撑臂包括端子部分，其支撑基本平坦的构件并且延伸穿过多个槽中的相应一个以支撑环

6. 发明申请

WO2013162972A1 PROCESS CHAMBER HAVING SEPARATE PROCESS GAS AND PURGE GAS REGIONS 审中-公开
标题翻译：具有独立工艺气体和纯净气体区域的过程室
公开(公告)号：WO2013162972A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/036981
申请日：2013-04-17
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph M. , BRILLHART, Paul , MARIN, Jose Antonio , KUPPURAO, Satheesh , RAMACHANDRAN, Balasubramanian , SRINIVASAN, Swaminathan T. , SAMIR, Mehmet Tugrul
发明人： RANISH, Joseph M. , BRILLHART, Paul , MARIN, Jose Antonio , KUPPURAO, Satheesh , RAMACHANDRAN, Balasubramanian , SRINIVASAN, Swaminathan T. , SAMIR, Mehmet Tugrul
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.
摘要翻译：本发明的实施例一般涉及在其中处理衬底的腔室和方法。这些室通常包括单独的工艺气体和吹扫气体区域。处理气体区域和吹扫气体区域各自具有相应的气体入口和气体出口。所述方法通常包括将衬底定位在腔室内的衬底支撑件上。衬底支架的平面限定了工艺气体区域和吹扫气体区域之间的边界。吹扫气体通过至少一个吹扫气体入口被引入净化气体区域中，并且使用至少一个净化气体出口从净化气体区域中除去。工艺气体通过至少一个工艺气体入口引入工艺气体区域，并通过至少一个工艺气体出口从工艺气体区域中移出。工艺气体被热分解以在衬底上沉积材料。

7. 发明申请

WO2011043961A3 EPITAXIAL CHAMBER WITH CROSS FLOW 审中-公开
公开(公告)号：WO2011043961A3
公开(公告)日：2011-04-14
申请号：PCT/US2010/050593
申请日：2010-09-28
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , SANCHEZ, Errol, Antonio, C. , MYO, Nyi, O. , BAUTISTA, Kevin, Joseph , JUNEJA, Harpreet, Singh , ZHU, Zuoming
发明人： RAMACHANDRAN, Balasubramanian , SANCHEZ, Errol, Antonio, C. , MYO, Nyi, O. , BAUTISTA, Kevin, Joseph , JUNEJA, Harpreet, Singh , ZHU, Zuoming
IPC分类号： H01L21/205
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

8. 发明申请

WO2012149331A2 OPTICAL ENDPOINT DETECTION SYSTEM 审中-公开
标题翻译：光学端点检测系统
公开(公告)号：WO2012149331A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/035469
申请日：2012-04-27
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , ISHII, Masato , HUNTER, Aaron Muir
发明人： RAMACHANDRAN, Balasubramanian , ISHII, Masato , HUNTER, Aaron Muir
IPC分类号： H01L21/66
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于在处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

9. 发明申请

WO2010115117A3 LAMP WITH INTERNAL FUSE SYSTEM 审中-公开
公开(公告)号：WO2010115117A3
公开(公告)日：2010-10-07
申请号：PCT/US2010/029802
申请日：2010-04-02
申请人： APPLIED MATERIALS, INC. , RAMACHANDRAN, Balasubramanian , MYO, Nyi Oo , RANISH, Joseph M. , TAKAHASHI, Akio
发明人： RAMACHANDRAN, Balasubramanian , MYO, Nyi Oo , RANISH, Joseph M. , TAKAHASHI, Akio
IPC分类号： H01K1/66 , H01J61/50 , H01J61/56
摘要： Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.

10. 发明申请

WO2006078513A2 INTEGRATED MULTI-BAND TRANSCEIVER FOR USE IN MOBILE COMMUNICATION DEVICE 审中-公开
标题翻译：用于移动通信设备的集成多带收发器
公开(公告)号：WO2006078513A2
公开(公告)日：2006-07-27
申请号：PCT/US2006/000899
申请日：2006-01-11
申请人： SKYWORKS SOLUTIONS, INC. , BEAMISH, Norman J. , DARIOUSH, Agahi , RAMACHANDRAN, Balasubramanian
发明人： BEAMISH, Norman J. , DARIOUSH, Agahi , RAMACHANDRAN, Balasubramanian
IPC分类号： H04M1/00
CPC分类号： H04B1/3805
摘要： A multi-band communication device configured with a mobile communication device for voice or data communication over a cellular, satellite or other communication network and configured with an auxiliary communication system configured to receive and/or transmit an auxiliary communication signal. The mobile communication device and auxiliary communication system are integrated into the same components within the multi-band communication device thereby allowing the components to share the processing tasks associated with each communication device within the multi-band communication device. The auxiliary communication device may be configured to operate during standby mode of the mobile communication device, such as during reception of a paging signal. The auxiliary communication device may comprise, but is not limited to, AM or FM radio, personal communication devices such as FRS, GMRS, or weather band radio.
摘要翻译：一种多频带通信设备，配置有用于通过蜂窝，卫星或其它通信网络进行语音或数据通信的移动通信设备，并配置有被配置为接收和/或发送辅助通信信号的辅助通信系统。移动通信设备和辅助通信系统被集成到多频带通信设备中的相同组件中，从而允许组件共享与多频带通信设备内的每个通信设备相关联的处理任务。辅助通信设备可以被配置为在移动通信设备的待机模式期间操作，诸如在接收寻呼信号期间。辅助通信设备可以包括但不限于AM或FM无线电，诸如FRS，GMRS或天气波段无线电的个人通信设备。

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