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1. 发明申请

WO2019094224A1 METHODS FOR FORMING A CAPPING LAYER FOR AN INTERCONNECTION STRUCTURE 审中-公开
公开(公告)号：WO2019094224A1
公开(公告)日：2019-05-16
申请号：PCT/US2018/058110
申请日：2018-10-30
申请人： APPLIED MATERIALS, INC.
发明人： LEE, Joung Joo , CHEN, Feng , WU, Zhiyuan , BASU, Atashi , NAIK, Mehul, B. , HU, Yufei
IPC分类号： H01L21/02 , H01L21/285 , H01L21/28 , H01L21/67 , C23C16/455
摘要： Methods for forming a capping protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming capping protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal silicide layer on a metal line bounded by a dielectric bulk insulating layer in a back end interconnection structure formed on a substrate in a processing chamber; and forming a dielectric layer on the metal silicide layer.

2. 发明申请

WO2017161147A1 COBALT RESISTANCE RECOVERY BY HYDROGEN ANNEAL 审中-公开
标题翻译：氢退火法回收钴
公开(公告)号：WO2017161147A1
公开(公告)日：2017-09-21
申请号：PCT/US2017/022758
申请日：2017-03-16
申请人： APPLIED MATERIALS, INC.
发明人： BEKIARIS, Nikolaos , NAIK, Mehul , WU, Zhiyuan
IPC分类号： H01L21/768
CPC分类号： H01L21/76834 , H01L21/76814 , H01L21/76826 , H01L21/76832 , H01L21/76883 , H01L23/53209
摘要： Resistance increase in cobalt interconnects due to nitridation occurring during removal of surface oxide from cobalt interconnects and deposition of nitrogen-containing film on cobalt interconnects is solved by a hydrogen thermal anneal or plasma treatment. Removal of the nitride is through a thin overlying layer which may be a dielectric barrier layer or an etch stop layer.
摘要翻译：从钴互连中去除表面氧化物期间发生的氮化和钴互连上的含氮膜的沉积中钴互连的电阻增加通过氢热退火或等离子体处理来解决。氮化物的去除是通过一个薄的覆盖层，它可能是一个电介质阻挡层或一个蚀刻停止层。

3. 发明申请

WO2023033901A1 METHOD OF FORMING A METAL LINER FOR INTERCONNECT STRUCTURES 审中-公开
公开(公告)号：WO2023033901A1
公开(公告)日：2023-03-09
申请号：PCT/US2022/034531
申请日：2022-06-22
申请人： APPLIED MATERIALS, INC.
发明人： QU, Ge , WU, Zhiyuan , CHEN, Feng , LEAL CERVANTES, Carmen , KIM, Yong Jin , KASHEFI, Kevin , TANG, Xianmin
IPC分类号： H01L21/768 , H01L21/285
摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

4. 发明申请

WO2021226170A1 BINARY METAL LINER LAYERS 审中-公开
公开(公告)号：WO2021226170A1
公开(公告)日：2021-11-11
申请号：PCT/US2021/030783
申请日：2021-05-05
申请人： APPLIED MATERIALS, INC.
发明人： SHEN, Gang , CHEN, Feng , SABBA, Yizhak , HA, Tae Hong , TANG, Xianmin , WU, Zhiyuan , XU, Wenjing
IPC分类号： H01L21/768 , H01L21/285
摘要： Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

5. 发明申请

WO2018063815A1 DOPED SELECTIVE METAL CAPS TO IMPROVE COPPER ELECTROMIGRATION WITH RUTHENIUM LINER 审中-公开
标题翻译：多孔选择性金属盖，以改善铜电钌与钌衬里
公开(公告)号：WO2018063815A1
公开(公告)日：2018-04-05
申请号：PCT/US2017/051566
申请日：2017-09-14
申请人： APPLIED MATERIALS, INC.
发明人： NAIK, Mehul B. , WU, Zhiyuan
IPC分类号： H01L21/768
摘要： Embodiments of the present disclosure are related to improved methods for forming a structure in a substrate. In one implementation, the method includes forming a recess in the substrate, forming a barrier layer on exposed surfaces of the substrate and exposed surfaces of the recess, forming an intermediate layer on the barrier layer, forming a metal fill layer on the intermediate layer and overfill the recess, planarizing the metal fill layer to expose the barrier layer, the intermediate layer, and a top surface of the substrate, selectively forming a cobalt layer on the metal fill layer, and exposing the substrate to an aluminum-containing precursor to selectively form a cobalt-aluminum alloy layer on at least a top surface of the cobalt layer.
摘要翻译：本公开的实施例涉及用于在衬底中形成结构的改进方法。在一个实施方式中，该方法包括在衬底中形成凹槽，在衬底的暴露表面上和凹槽的暴露表面上形成阻挡层，在阻挡层上形成中间层，在中间层上形成金属填充层以及过度填充凹陷，平坦化金属填充层以暴露阻挡层，中间层和衬底的顶表面，在金属填充层上选择性地形成钴层，并将衬底暴露于含铝前体以选择性地在钴层的至少顶面上形成钴 - 铝合金层。

6. 发明申请

WO2022020679A1 RUTHENIUM LINER AND CAP FOR BACK-END-OF-LINE APPLICATIONS 审中-公开
公开(公告)号：WO2022020679A1
公开(公告)日：2022-01-27
申请号：PCT/US2021/042899
申请日：2021-07-23
申请人： APPLIED MATERIALS, INC.
发明人： XU, Wenjing , CHEN, Feng , HA, Tae Hong , TANG, Xianmin , CHEN, Lu , WU, Zhiyuan
IPC分类号： H01L21/768 , H01L21/76844 , H01L21/76846 , H01L21/76849 , H01L23/5226 , H01L23/53238
摘要： Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.

7. 发明申请

WO2018231337A3 PROCESS INTEGRATION APPROACH OF SELECTIVE TUNGSTEN VIA FILL 审中-公开
公开(公告)号：WO2018231337A3
公开(公告)日：2018-12-20
申请号：PCT/US2018/028036
申请日：2018-04-17
申请人： APPLIED MATERIALS, INC.
发明人： REN, He , MA, Feiyue , LEI, Yu , WU, Kai , NAIK, Mehul B. , WU, Zhiyuan , BANTHIA, Vikash , AL, Hua
IPC分类号： H01L21/768 , H01L21/02
摘要： The present disclosure generally relates to interconnects disposed on a substrate and methods for forming the interconnects. A via and a trench are formed in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack in the via. A second metal fill material of a second type is deposited on the stack in the trench.

8. 发明申请

WO2018231337A2 PROCESS INTEGRATION APPROACH OF SELECTIVE TUNGSTEN VIA FILL 审中-公开
公开(公告)号：WO2018231337A2
公开(公告)日：2018-12-20
申请号：PCT/US2018/028036
申请日：2018-04-17
申请人： APPLIED MATERIALS, INC.
发明人： REN, He , MA, Feiyue , LEI, Yu , WU, Kai , NAIK, Mehul B. , WU, Zhiyuan , BANTHIA, Vikash , AL, Hua
IPC分类号： H01L21/768 , H01L21/02
摘要： The present disclosure generally relates to interconnects disposed on a substrate and methods for forming the interconnects. A via and a trench are formed in a stack formed on the substrate. A bottom of the via is pre-treated using a first pre-treatment procedure. A sidewall of the via is pre-treated using a second pre-treatment procedure. A first metal fill material of a first type is deposited on the stack in the via. A second metal fill material of a second type is deposited on the stack in the trench.

9. 发明申请

WO2018140282A1 ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE BY RUTHENIUM DOPING 审中-公开
公开(公告)号：WO2018140282A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/014210
申请日：2018-01-18
申请人： APPLIED MATERIALS, INC.
发明人： WU, Zhiyuan , BEKIARIS, Nikolaos , NAIK, Mehul B. , PARK, Jin Hee , LEE, Mark Hyun
IPC分类号： C23C16/16 , C23C16/18 , C23C16/56 , C23C16/02
摘要： In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. The method further comprises exposing the substrate to a ruthenium precursor to form a ruthenium-containing layer on the barrier and/or liner layer. The method further comprises exposing the substrate to a cobalt precursor to form a cobalt seed layer atop the ruthenium-containing layer. The method further comprises forming a bulk cobalt layer on the cobalt seed layer to fill the feature definition.

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