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1. 发明申请

WO2018085072A1 HIGH-PRESSURE ANNEALING AND REDUCING WET ETCH RATES 审中-公开
标题翻译：高压退火和降低湿蚀刻速率
公开(公告)号：WO2018085072A1
公开(公告)日：2018-05-11
申请号：PCT/US2017/057911
申请日：2017-10-23
申请人： APPLIED MATERIALS, INC.
发明人： LESCHKIES, Kurtis, S. , WONG, Keith, Tatseun , VERHAVERBEKE, Steven
IPC分类号： H01L21/768 , H01L21/306
摘要： Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. The dielectric films are treated by exposing the patterned substrate to a high pressure of water vapor in the gas phase. The treatment may reduce the wet etch rate of the dielectric films, especially the gapfill portion of the dielectric film. Scanning electron microscopy has confirmed that the quantity and/or size of pores is reduced or eliminated by the procedures described herein. The treatment has also been found to reduce the etch rate, e.g., at the bottom of gaps filled with the dielectric film.
摘要翻译：描述了通过在沉积过程中使材料流入间隙中来降低在图案化衬底上形成的介电膜的湿法蚀刻速率的方法。以这种方式沉积的薄膜可能最初表现出提高的湿蚀刻速率。通过将图案化的衬底暴露于气相中的高压水蒸气来处理电介质膜。该处理可以降低介电膜的湿蚀刻速率，特别是介电膜的间隙填充部分。扫描电子显微镜已证实，通过本文所述的程序减少或消除了孔的数量和/或尺寸。还发现该处理降低了蚀刻速率，例如在填充有介电膜的间隙的底部。

2. 发明申请

WO2018217967A1 HIGH PRESSURE TREATMENT OF SILICON NITRIDE FILM 审中-公开
公开(公告)号：WO2018217967A1
公开(公告)日：2018-11-29
申请号：PCT/US2018/034284
申请日：2018-05-24
申请人： APPLIED MATERIALS, INC.
发明人： WONG, Keith, Tatseun , KANG, Sean, S. , NEMANI, Srinivas, D. , YIEH, Ellie, Y.
IPC分类号： H01L21/02 , H01L21/321 , C23C16/44 , H01L21/67
摘要： Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.

3. 发明公开

EP3635769A1 HIGH PRESSURE TREATMENT OF SILICON NITRIDE FILM 审中-公开
公开(公告)号：EP3635769A1
公开(公告)日：2020-04-15
申请号：EP18805265.8
申请日：2018-05-24
申请人： Applied Materials, Inc.
发明人： WONG, Keith, Tatseun , KANG, Sean, S. , NEMANI, Srinivas, D. , YIEH, Ellie, Y.
IPC分类号： H01L21/02 , H01L21/321 , C23C16/44 , H01L21/67

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