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1. 发明申请

WO2008070181A2 MID-CHAMBER GAS DISTRIBUTION PLATE, TUNED PLASMA CONTROL GRID AND ELECTRODE 审中-公开
标题翻译：中间室气体分配板，调节的等离子体控制栅和电极
公开(公告)号：WO2008070181A2
公开(公告)日：2008-06-12
申请号：PCT/US2007/025090
申请日：2007-12-05
申请人： APPLIED MATERIALS, INC.
发明人： PATERSON, Alexander, M. , HOLLAND, John, P. , PANAGOPOULOS, Theodoros , HAMMOND, Edward, P., IV , HATCHER, Brian, K. , TODOROW, Valentin, N. , KATZ, Dan
IPC分类号： H05H1/34
CPC分类号： H01J37/32422 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32449
摘要： A plasma reactor is provided for processing a workpiece such as a semiconductor wafer or a dielectric mask. The reactor chamber has a ceiling, a side wall and a workpiece support pedestal inside the chamber and facing the ceiling along an axis of symmetry and defining a chamber volume between the pedestal and the ceiling. An RF plasma source power applicator is provided at the ceiling. An in-situ electrode body inside the chamber lies divides the chamber into upper and lower chamber regions. The in-situ electrode comprises plural flow- through passages extending parallel to the axis and having different opening sizes, the passages being radially distributed by opening size in accordance with a desired radial distribution of gas flow resistance through the in-situ electrode body.
摘要翻译：提供用于处理诸如半导体晶片或介电掩模的工件的等离子体反应器。反应室在室内具有天花板，侧壁和工件支撑基座，并且沿着对称轴面向天花板并限定基座和天花板之间的室体积。在天花板上提供RF等离子源功率施加器。腔室内的原位电极体将腔室分成上腔室区域和下腔室区域。原位电极包括平行于轴线延伸并且具有不同开口尺寸的多个流通通道，通道根据通过原位电极体的气流阻力的期望径向分布通过开口尺寸径向分布。 / p>

2. 发明申请

WO2009067104A1 PLASMA ETCH PROCESS FOR CONTROLLING LINE EDGE ROUGHNESS 审中-公开
标题翻译：用于控制线边缘粗糙度的等离子体蚀刻过程
公开(公告)号：WO2009067104A1
公开(公告)日：2009-05-28
申请号：PCT/US2007/025369
申请日：2007-12-11
申请人： APPLIED MATERIALS, INC.
发明人： BELEN, Rodolfo, P. , HAMMOND IV, Edward, P. , HATCHER, Brian, K. , KATZ, Dan , PANAGOPOULOS, Theodoros , PATERSON, Alexander, M. , TODOROW, Valentin, N.
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32165 , H01J37/32449 , H01L21/033
摘要： Line edge smoothness in a hardmask etch process is improved by widening the chamber pressure process window by applying VHF power and increasing the chamber pressure to near the maximum value of the widened process window.
摘要翻译：硬掩模蚀刻工艺中的线边缘平滑度通过使用VHF功率加宽腔室压力过程窗口并将腔室压力增加到接近加宽过程窗口的最大值来改善。

3. 发明公开

EP1301938A2 A PLASMA REACTOR HAVING A SYMMETRIC PARALLEL CONDUCTOR COIL ANTENNA 审中-公开
标题翻译：与平衡天线，MADE线圈等离子体反应器并联导体
公开(公告)号：EP1301938A2
公开(公告)日：2003-04-16
申请号：EP01950648.4
申请日：2001-06-29
申请人： Applied Materials, Inc.
发明人： HOLLAND, John , TODOROW, Valentin, N. , BARNES, Michael
IPC分类号： H01J37/00
CPC分类号： H01J37/321
摘要： The invention in one embodiment is realized in a plasma reactor for processing a semiconductor workpiece. The reactor includes a vacuum chamber having a side wall and a ceiling, a workpiece support pedestal within the chamber and generally facing the ceiling, a gas inlet capable of interleaved parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric helical solenoids of at least nearly uniform lateral displacements from the axis of symmetry, each helical solenoid being offset from the other helical solenoids in a direction parallel to the axis of symmetry. A RF plasma source power supply is connected across each of the plural conductors. In another embodiment, the antenna is a solenoidal segmented parallel conductor coil antenna overlying the ceiling and including a first plurality conductors wound about an axis of symmetry generally perpendicular to the ceiling in respective concentric side-by-side helical solenoids, each helical solenoid being offset by a distance on the order of a conductor width of the plurality of conductors from teh nearest other helical solenoids in a direction perpendicular to the axis of symmetry, whereby each helical solenoid has slightly different diameter.

4. 发明申请

WO2009117612A2 SHIELDED LID HEATER ASSEMBLY 审中-公开
标题翻译：屏蔽盖加热器组件
公开(公告)号：WO2009117612A2
公开(公告)日：2009-09-24
申请号：PCT/US2009/037722
申请日：2009-03-19
申请人： APPLIED MATERIALS, INC. , WILLWERTH, Michael, D. , PALAGASHVILI, David , TODOROW, Valentin, N. , YUEN, Stephen
发明人： WILLWERTH, Michael, D. , PALAGASHVILI, David , TODOROW, Valentin, N. , YUEN, Stephen
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.
摘要翻译：提供适用于等离子体处理室的屏蔽式盖加热器盖加热器，具有屏蔽式盖加热器的等离子体处理室和等离子体处理方法。该方法和设备增强了等离子体处理室内等离子体位置的位置控制，并且可以用于蚀刻，沉积，植入和热处理系统，以及期望控制等离子体位置的其他应用中。在一个实施例中，提供了屏蔽式盖子加热器，其包括夹住加热器元件的铝基座和RF屏蔽。

5. 发明申请

WO2008103456A3 PULSED PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：WO2008103456A3
公开(公告)日：2008-08-28
申请号：PCT/US2008/002371
申请日：2008-02-21
申请人： APPLIED MATERIALS, INC , KIM, Tae, Won , LEE, Kyeong-tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
发明人： KIM, Tae, Won , LEE, Kyeong-tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
IPC分类号： C23F1/00 , H01L21/306
摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

6. 发明申请

WO2010102161A2 INDUCTIVELY COUPLED PLASMA REACTOR HAVING RF PHASE CONTROL AND METHODS OF USE THEREOF 审中-公开
标题翻译：具有射频控制的电感耦合等离子体反应器及其使用方法
公开(公告)号：WO2010102161A2
公开(公告)日：2010-09-10
申请号：PCT/US2010/026291
申请日：2010-03-05
申请人： APPLIED MATERIALS, INC. , GRIMBERGEN, Michael, N. , OUYE, Alan, Hiroshi , TODOROW, Valentin, N.
发明人： GRIMBERGEN, Michael, N. , OUYE, Alan, Hiroshi , TODOROW, Valentin, N.
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32165 , H01J37/321 , H01L21/67069
摘要： Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.
摘要翻译：本发明的实施例通常提供具有衬底RF偏压的电感耦合等离子体（ICP）反应器，其能够控制ICP源（第一RF源）与第一RF源（第一RF源）之间的RF相位差用于半导体工业中的等离子体处理反应器的衬底偏压（第二RF源）。 RF相位差的控制为微调过程提供了强大的旋钮。例如，可以使用RF相位差的控制来控制平均蚀刻速率，蚀刻速率均匀性，蚀刻速率偏斜，临界尺寸（CD）均匀性和CD偏斜，CD范围，自身DC偏置控制中的一个或多个，以及室匹配。

7. 发明申请

WO2008103454A2 PULSED PLASMA SYSTEM FOR ETCHING SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：用于蚀刻半导体结构的脉冲等离子体系统
公开(公告)号：WO2008103454A2
公开(公告)日：2008-08-28
申请号：PCT/US2008/002368
申请日：2008-02-21
申请人： APPLIED MATERIALS, INC. , KIM, Tae, Won , LEE, Kyeong-Tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
发明人： KIM, Tae, Won , LEE, Kyeong-Tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23F4/00 , H01J37/32009 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.
摘要翻译：描述了用于蚀刻半导体结构的脉冲等离子体系统。在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。占空比的导通状态具有足够短的持续时间，从而基本上抑制了与样品相邻的反应区域中的微负荷，同时占空比的关闭状态持续足够长，从而基本上能够去除一组蚀刻来自反应区域的副产物。在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

8. 发明申请

WO2011008596A3 PLASMA REACTOR WITH UNIFORM PROCESS RATE DISTRIBUTION BY IMPROVED RF GROUND RETURN PATH 审中-公开
公开(公告)号：WO2011008596A3
公开(公告)日：2011-01-20
申请号：PCT/US2010/041086
申请日：2010-07-06
申请人： APPLIED MATERIALS, INC. , NGUYEN, Andrew , HANAWA, Hiroji , RAMASWAMY, Kartik , BANNA, Samer , SHEYNER, Anchel , TODOROW, Valentin, N.
发明人： NGUYEN, Andrew , HANAWA, Hiroji , RAMASWAMY, Kartik , BANNA, Samer , SHEYNER, Anchel , TODOROW, Valentin, N.
IPC分类号： H05H1/24 , H05H1/46
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axiaily extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support: surface from a pedestal side wail, and includes an annular array of radial slots, each of the siots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wail liner covers an interior surface of the chamber side wall and extends axiaily from a height near a height of said workplace support surface to the chamber ceiling.

9. 发明申请

WO2010014433A2 FIELD ENHANCED INDUCTIVELY COUPLED PLASMA (FE-ICP) REACTOR 审中-公开
标题翻译：场增强电感耦合等离子体（FE-ICP）反应器
公开(公告)号：WO2010014433A2
公开(公告)日：2010-02-04
申请号：PCT/US2009/050916
申请日：2009-07-17
申请人： APPLIED MATERIALS, INC. , TODOROW, Valentin, N. , BANNA, Samer , RAMASWAMY, Kartik , WILLWERTH, Michael, D.
发明人： TODOROW, Valentin, N. , BANNA, Samer , RAMASWAMY, Kartik , WILLWERTH, Michael, D.
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/321
摘要： Embodiments of field enhanced inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a field enhanced inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes one or more coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, one or more electrodes configured to capacitively couple RF energy into the process chamber to form the plasma therein, wherein the one or more electrodes are electrically coupled to one of the one or more coils, and an RF generator coupled to the one or more inductive coils and the one or more electrodes. In some embodiments, a heater element may be disposed between the dielectric lid and the plasma source assembly,
摘要翻译：本文提供了场增强电感耦合等离子体反应器的实施例及其使用方法。在一些实施例中，场增强电感耦合等离子体处理系统可以包括具有电介质盖的处理室和布置在电介质盖上方的等离子体源组件。等离子体源组件包括一个或多个线圈，其被配置成将RF能量感应耦合到处理室中以在其中形成和保持等离子体，一个或多个电极被配置为将RF能量电容耦合到处理室中以在其中形成等离子体，或更多电极电耦合到所述一个或多个线圈中的一个线圈，以及耦合到所述一个或多个电感线圈和所述一个或多个电极的RF发生器。在一些实施例中，加热器元件可以设置在介电盖和等离子体源组件之间

10. 发明申请

WO2008103453A1 PULSED PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：具有脉冲反应气体排放的脉冲等离子体系统用于蚀刻半导体结构
公开(公告)号：WO2008103453A1
公开(公告)日：2008-08-28
申请号：PCT/US2008/002367
申请日：2008-02-21
申请人： APPLIED MATERIALS, INC. , KIM, Tae, Won , LEE, Kyeong-tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
发明人： KIM, Tae, Won , LEE, Kyeong-tae , PATERSON, Alexander , TODOROW, Valentin, N. , DESHMUKH, Shashank, C.
IPC分类号： H01L21/306 , H01J37/32
CPC分类号： H01J37/32431 , H01J2237/334 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish.
摘要翻译：描述了一种具有脉冲反应气体的脉冲等离子体系统，用于蚀刻半导体结构。在一个实施例中，通过施加脉冲等离子体蚀刻工艺去除一部分样品。脉冲等离子体蚀刻工艺包括多个占空比，其中每个占空比表示等离子体的导通状态和断开状态的组合。等离子体由反应气体产生，其中反应气体在等离子体的关闭状态期间补充，而不是在ON状态下补充。在另一个实施例中，通过施加连续的等离子体蚀刻工艺来移除样品的第一部分。然后连续等离子体蚀刻工艺终止，通过施加具有脉冲反应气体补充的脉冲等离子体蚀刻工艺来除去样品的第二部分。

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