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1. 发明申请

WO2019245988A1 APPARATUS AND METHODS FOR CONTROLLING THE FLOW OF PROCESS MATERIAL TO A DEPOSITION CHAMBER 审中-公开
公开(公告)号：WO2019245988A1
公开(公告)日：2019-12-26
申请号：PCT/US2019/037527
申请日：2019-06-17
申请人： APPLIED MATERIALS, INC.
发明人： LERNER, Alexander , SHAVIV, Roey , STOUT, Phillip , RANISH, Joseph M. , KOTHNUR, Prashanth , RADHAKRISHNAN, Satish
IPC分类号： H01L21/67 , H01L51/00 , H01L21/02 , H01L27/146 , C23C16/44
摘要： Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

2. 发明申请

WO2021081155A1 METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH 审中-公开
公开(公告)号：WO2021081155A1
公开(公告)日：2021-04-29
申请号：PCT/US2020/056768
申请日：2020-10-22
申请人： APPLIED MATERIALS, INC.
发明人： COLOMBEAU, Benjamin , BAUER, Matthias , SIDDIQUI, Naved Ahmed , STOUT, Phillip
IPC分类号： H01L21/8234 , H01L29/66 , H01L29/423 , H01L27/088 , H01L29/786 , H01L29/78
摘要： Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings and the first material layers remaining are epitaxially grown to form a finlike structure.

3. 发明申请

WO2021050395A1 VAPOR DELIVERY METHODS AND APPARATUS 审中-公开
公开(公告)号：WO2021050395A1
公开(公告)日：2021-03-18
申请号：PCT/US2020/049561
申请日：2020-09-04
申请人： APPLIED MATERIALS, INC.
发明人： LERNER, Alexander N. , SHAVIV, Roey , STOUT, Phillip , KOTHNUR, Prashanth , RANISH, Joseph M.
IPC分类号： C23C14/00 , C23C14/12 , C23C16/455
摘要： Embodiments of the present disclosure generally relate to organic vapor deposition systems and substrate processing methods related thereto. In one embodiment, a processing system comprises a lid assembly and a plurality of material delivery systems. The lid assembly includes lid plate having a first surface and a second surface disposed opposite of the first surface and a showerhead assembly coupled to the first surface. The showerhead assembly comprises a plurality of showerheads. Individual ones of the plurality of material delivery systems are fluidly coupled to one or more of the plurality of showerheads and are disposed on the second surface of the lid plate. Each of the material delivery systems comprise a delivery line, a delivery line valve disposed on the delivery line, a bypass line fluidly coupled to the delivery line at a point disposed between the delivery line valve and the showerhead, and a bypass valve disposed on the bypass line.

4. 发明申请

WO2015077345A1 METHOD AND APPARATUS FOR FILM DEPOSITION 审中-公开
标题翻译：膜沉积的方法和装置
公开(公告)号：WO2015077345A1
公开(公告)日：2015-05-28
申请号：PCT/US2014/066423
申请日：2014-11-19
申请人： APPLIED MATERIALS, INC.
发明人： TANG, Xianmin , GODET, Ludovic , LIU, Guojun , TANG, Jing , STOUT, Phillip , TAO, Rong
IPC分类号： C23C14/48 , C23C14/06
CPC分类号： C23C14/046
摘要： A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.
摘要翻译：描述了一种在衬底上沉积膜的方法和装置。该方法包括在其上或其上形成特征的基底上沉积膜。该特征包括处于不同水平的第一表面和第二表面。通过将衬底暴露于来自线性离子源的离子通量来去除沉积膜的至少一部分。离子通量具有小于或等于90度且大于或等于15度的离子角度扩展。在某些实施例中，特征可以是纳米尺度的高纵横比特征，例如窄的，深的沟槽，小直径，深孔或双镶嵌结构。这些特征通常在集成电路器件中找到。

5. 发明申请

WO2016153716A1 AN ATOMIC LAYER PROCESS CHAMBER FOR 3D CONFORMAL PROCESSING 审中-公开
标题翻译：用于3D一致处理的原子层过程室
公开(公告)号：WO2016153716A1
公开(公告)日：2016-09-29
申请号：PCT/US2016/019619
申请日：2016-02-25
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Wei , MAYUR, Abhilash J. , STOUT, Phillip
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H01L21/3065 , H01L21/02167 , H01L21/0228 , H01L21/02321 , H01L21/02332 , H01L21/0234 , H01L21/3115 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/68771
摘要： Embodiments described herein relate to methods for forming or treating material layers on semiconductor substrates. In one embodiment, a method for performing an atomic layer process includes delivering a species to a surface of a substrate at a first temperature, followed by spike annealing the surface of the substrate to a second temperature to cause a reaction between the species and the molecules on the surface of the substrate. The second temperature is higher than the first temperature. By repeating the delivering and spike annealing processes, a conformal layer is formed on the surface of the substrate or a conformal etching process is performed on the surface of the substrate.
摘要翻译：本文所述的实施例涉及在半导体衬底上形成或处理材料层的方法。在一个实施例中，用于执行原子层过程的方法包括在第一温度下将物质输送到衬底的表面，随后将衬底的表面尖峰退火到第二温度以引起物质和分子之间的反应在基板的表面上。第二温度高于第一温度。通过重复输送和尖峰退火处理，在基板的表面上形成保形层，或者在基板的表面上执行保形蚀刻工艺。

6. 发明申请

WO2013173034A1 ROTATIONAL ABSORPTION SPECTRA FOR SEMICONDUCTOR MANUFACTURING PROCESS MONITORING AND CONTROL 审中-公开
标题翻译：用于半导体制造过程监控和控制的旋转吸收光谱
公开(公告)号：WO2013173034A1
公开(公告)日：2013-11-21
申请号：PCT/US2013/038111
申请日：2013-04-25
申请人： APPLIED MATERIALS, INC.
发明人： SUI, Zhifeng , ARMACOST, Michael D. , STOUT, Phillip , LIAN, Lei , PATZ, Ryan
IPC分类号： H01L21/66
CPC分类号： H01L22/10 , H01J37/32963 , H01J37/32972
摘要： Methods and apparatus for semiconductor manufacturing process monitoring and control are provided herein. In some embodiments, apparatus for substrate processing may include a process chamber for processing a substrate in an inner volume of the process chamber; a radiation source disposed outside of the process chamber to provide radiation at a frequency of about 200 GHz to about 2 THz into the inner volume via a dielectric window in a wall of the vacuum process chamber; a detector to detect the signal after having passed through the inner volume; and a controller coupled to the detector and configured to determine the composition of species within the inner volume based upon the detected signal.
摘要翻译：本文提供了用于半导体制造过程监控和控制的方法和装置。在一些实施例中，用于衬底处理的装置可以包括用于处理处理室的内部容积中的衬底的处理室; 辐射源，其设置在所述处理室的外部，以通过所述真空处理室的壁中的电介质窗口向所述内部体积提供频率为约200GHz至约2THz的辐射; 检测器，用于在通过内部体积之后检测信号; 以及耦合到所述检测器并被配置为基于所检测到的信号来确定所述内部体积内的物种的组成的控制器。

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