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1. 发明申请

WO2021096907A1 GAS DELIVERY SYSTEMS AND METHODS 审中-公开
公开(公告)号：WO2021096907A1
公开(公告)日：2021-05-20
申请号：PCT/US2020/059934
申请日：2020-11-11
申请人： APPLIED MATERIALS, INC.
发明人： KEDLAYA, Diwakar , RUAN, Fang , HUANG, Zubin , BALASUBRAMANIAN, Ganesh , ALAYAVALLI, Kaushik , SEAMONS, Martin , LEE, Kwangduk , NARAYANAN, Rajaram , JANAKIRAMAN, Karthik
IPC分类号： H01L21/67 , H01L21/66 , G01N21/3504 , G01N21/31
摘要： A system may include a main line for delivering a first gas, and a sensor for measuring a concentration of a precursor in the first gas delivered through the main line. The system may further include first and second sublines for providing fluid access to first and second processing chambers, respectively. The first subline may include a first flow controller for controlling the first gas flowed through the first subline. The second subline may include a second flow controller for controlling the first gas flowed through the second subline. A delivery controller may be configured to control the first and second flow controllers based on the measured concentration of the precursor to deliver a first mixture of the first gas and a second gas and a second mixture of the first and second gases into the first and second semiconductor processing chambers, respectively.

2. 发明申请

WO2021096914A1 REDUCED HYDROGEN DEPOSITION PROCESSES 审中-公开
公开(公告)号：WO2021096914A1
公开(公告)日：2021-05-20
申请号：PCT/US2020/059947
申请日：2020-11-11
申请人： APPLIED MATERIALS, INC.
发明人： MIN, Xiaoquan , PARIMI, Venkata Sharat Chandra , KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk
IPC分类号： H01L21/033 , C23C16/02 , C23C16/505 , C23C16/44
摘要： Exemplary methods of semiconductor processing may include treating a surface of a substrate with a hydrogen-containing precursor. The substrate may be disposed within a processing region of a semiconductor processing chamber. The methods may include contacting the substrate with a tungsten-containing precursor. The methods may include forming an initiation layer comprising tungsten on the substrate. The methods may include treating the initiation layer with a hydrogen-containing precursor. The methods may include forming a plasma of the tungsten-containing precursor and a carbon-containing precursor. Hydrogen in the plasma may be limited to hydrogen included in the carbon-containing precursor. The methods may include forming a tungsten-containing hardmask layer on the initiation layer.

3. 发明申请

WO2021086835A1 REDUCED DEFECT DEPOSITION PROCESSES 审中-公开
公开(公告)号：WO2021086835A1
公开(公告)日：2021-05-06
申请号：PCT/US2020/057500
申请日：2020-10-27
申请人： APPLIED MATERIALS, INC.
发明人： MIN, Xiaoquan , SONG, Byung Ik , WOO, Hyung Je , PARIMI, Venkata Sharat Chandra , KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk
IPC分类号： C23C16/44 , C23C16/32 , C23C16/458 , H01L21/033
摘要： Exemplary methods of semiconductor processing may include forming a silicon oxide material on exposed surfaces of a processing region of a semiconductor processing chamber. The methods may include forming a silicon nitride material overlying the silicon oxide material. The methods may include performing a deposition process on a semiconductor substrate disposed within the processing region of the semiconductor processing chamber. The methods may include performing a chamber cleaning process.

4. 发明申请

WO2016154305A1 DEFECT PLANARIZATION 审中-公开
标题翻译：缺陷平面化
公开(公告)号：WO2016154305A1
公开(公告)日：2016-09-29
申请号：PCT/US2016/023772
申请日：2016-03-23
申请人： APPLIED MATERIALS, INC.
发明人： REILLY, Patrick James , BETHKE, David Alan , LEE, Kwangduk
IPC分类号： H01L21/205 , H01L21/027
CPC分类号： H01L21/02115 , H01L21/02118 , H01L21/02274 , H01L21/0332 , H01L21/0337 , H01L21/31111 , H01L21/31133
摘要： Aspects of the disclosure pertain to methods of forming planar amorphous carbon layers on patterned substrates. Layers formed according to embodiments outlined herein have may improve manufacturing yield by making the top surface of an amorphous carbon layer more planar despite underlying topography or stoichiometric variations. The amorphous carbon layers may comprise carbon and hydrogen, may consist of carbon and hydrogen or may comprise or consist of carbon, hydrogen and nitrogen in embodiments. Methods described herein may comprise introducing a hydrogen-containing precursor at a relatively high ratio relative to a hydrocarbon into a substrate processing region and concurrently applying a local plasma power capacitively to the substrate processing region to form the planar layer. Alternatively an atomic flow ratio of hydrogen:carbon may begin low and increase discretely or smoothly during formation of the amorphous carbon layer.
摘要翻译：本公开的方面涉及在图案化基板上形成平面非晶碳层的方法。根据本文概述的实施方案形成的层可以通过使无定形碳层的顶表面更平面，而不管底层的地形或化学计量变化，都可以提高制造产率。无定形碳层可以包括碳和氢，可以由碳和氢组成，或者在实施方案中可以包含或由碳，氢和氮组成。本文描述的方法可以包括将相对于烃的相对高的比例的含氢前体引入基板处理区域中，并且同时将局部等离子体功率电容地施加到基板处理区域以形成平面层。或者，氢：碳的原子流动比可以开始低，并且在形成无定形碳层期间离散或平滑地增加。

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