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1. 发明申请

WO2018144374A1 SYSTEM FOR TUNABLE WORKPIECE BIASING IN A PLASMA REACTOR 审中-公开
公开(公告)号：WO2018144374A1
公开(公告)日：2018-08-09
申请号：PCT/US2018/015688
申请日：2018-01-29
申请人： APPLIED MATERIALS, INC.
发明人： KOH, Travis , KRAUS, Philip Allan , DORF, Leonid , GOPALRAJA, Prabu
IPC分类号： H01J37/32
摘要： Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller that independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.

2. 发明申请

WO2019209453A1 PLASMA ENHANCED CVD WITH PERIODIC HIGH VOLTAGE BIAS 审中-公开
公开(公告)号：WO2019209453A1
公开(公告)日：2019-10-31
申请号：PCT/US2019/024430
申请日：2019-03-27
申请人： APPLIED MATERIALS, INC.
发明人： CHAN, Kelvin , KOH, Travis , HUANG, Simon , KRAUS, Philip, Allan
IPC分类号： C23C16/515 , C23C16/24 , C23C16/40 , C23C16/34 , H01L21/02
摘要： Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

3. 发明申请

WO2018111751A1 CREATING ION ENERGY DISTRIBUTION FUNCTIONS (IEDF) 审中-公开
公开(公告)号：WO2018111751A1
公开(公告)日：2018-06-21
申请号：PCT/US2017/065546
申请日：2017-12-11
申请人： APPLIED MATERIALS, INC.
发明人： DORF, Leonid , KOH, Travis , LUERE, Olivier , JOUBERT, Olivier , KRAUS, Philip A. , DHINDSA, Rajinder , ROGERS, James Hugh
IPC分类号： H01L21/3065 , H01L21/3213
摘要： Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse - bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

4. 发明申请

WO2017218394A1 SYSTEMS AND METHODS FOR CONTROLLING A VOLTAGE WAVEFORM AT A SUBSTRATE DURING PLASMA PROCESSING 审中-公开
标题翻译：用于在等离子体处理期间控制基板上的电压波形的系统和方法
公开(公告)号：WO2017218394A1
公开(公告)日：2017-12-21
申请号：PCT/US2017/036981
申请日：2017-06-12
申请人： APPLIED MATERIALS, INC.
发明人： DORF, Leonid , ROGERS, James Hugh , LUERE, Olivier , KOH, Travis , DHINDSA, Rajinder , SRINIVASAN, Sunil
IPC分类号： H01J37/32
摘要： Systems and methods for controlling a voltage waveform at a substrate during plasma processing include applying a shaped pulse bias waveform to a substrate support, the substrate support including an electrostatic chuck, a chucking pole, a substrate support surface and an electrode separated from the substrate support surface by a layer of dielectric material. The systems and methods further include capturing a voltage representative of a voltage at a substrate positioned on the substrate support surface and iteratively adjusting the shaped pulse bias waveform based on the captured signal. In a plasma processing system a thickness and a composition of a layer of dielectric material separating the electrode and the substrate support surface can be selected such that a capacitance between the electrode and the substrate support surface is at least an order of magnitude greater than a capacitance between the substrate support surface and a plasma surface.
摘要翻译：用于在等离子体处理期间控制衬底处的电压波形的系统和方法包括将成形脉冲偏置波形施加到衬底支撑件，所述衬底支撑件包括静电吸盘，夹持杆，衬底支撑表面以及通过介电材料层与衬底支撑表面分离的电极。该系统和方法还包括捕获表示位于衬底支撑表面上的衬底处的电压的电压，并且基于捕获的信号迭代地调整整形的脉冲偏置波形。在等离子体处理系统中，可以选择分离电极和基板支撑表面的电介质材料层的厚度和组成，使得电极和基板支撑表面之间的电容至少比电容器的电容大一个数量级在衬底支撑表面和等离子体表面之间。

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