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1. 发明申请

WO2020046990A1 RADIO FREQUENCY (RF) PULSING IMPEDANCE TUNING WITH MULTIPLIER MODE 审中-公开
公开(公告)号：WO2020046990A1
公开(公告)日：2020-03-05
申请号：PCT/US2019/048407
申请日：2019-08-27
申请人： APPLIED MATERIALS, INC.
发明人： KAWASAKI, Katsumasa , PHI, Justin , RAMASWAMY, Kartik , SHOJI, Sergio Fukuda , SHIMIZU, Daisuke
IPC分类号： H01J37/32
摘要： Methods for RF pulse reflection reduction are provided herein. In some embodiments, a method for processing a substrate in a plasma enhanced substrate processing system using multi-level pulsed RF power includes; receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators, using the master RF generator to generate a transistor-transistor logic (TTL) signal having a base frequency and a first duty cycle, setting a multiplier for each RF generator, dividing the first duty cycle into a high level interval and a low level interval, determining a frequency command set for each RF generator and sending the frequency command set to each RF generator, wherein the frequency command set includes a frequency set point for each RF generator; and providing the plurality of pulsed RF power waveforms from the plurality of RF generators to a process chamber.

2. 发明申请

WO2020163100A1 METHODS AND APPARATUS FOR ETCHING SEMICONDUCTOR STRUCTURES 审中-公开
公开(公告)号：WO2020163100A1
公开(公告)日：2020-08-13
申请号：PCT/US2020/015155
申请日：2020-01-27
申请人： APPLIED MATERIALS, INC.
发明人： SHIMIZU, Daisuke , HATAKEYAMA, Taiki , KANG, Sean, S. , KAWASAKI, Katsumasa , ZHANG, Chunlei
IPC分类号： H01J37/32 , H01L21/3065
摘要： Methods and apparatus for producing high aspect ratio features in a substrate using reactive ion etching (RIE). In some embodiments, a method comprises flowing a gas mixture of C3H2F4 and a companion gas into a process chamber, forming a plasma from the gas mixture using an RF power source connected to an upper electrode above the substrate and at least one RF bias power source connected to a lower electrode under the substrate, performing an anisotropic etch, via the plasma, of at least one layer of oxide or nitride on the substrate using a pattern mask, reducing power of the at least one RF bias power source to produce deposition of a passivation layer on the at least one layer of oxide or nitride on the substrate, and evacuating the process chamber while interrupting the RF power source to stop plasma formation.

3. 发明申请

WO2017058341A1 RF POWER DELIVERY WITH APPROXIMATED SAW TOOTH WAVE PULSING 审中-公开
标题翻译：射频功率输出与近似的牙齿波形脉冲
公开(公告)号：WO2017058341A1
公开(公告)日：2017-04-06
申请号：PCT/US2016/042948
申请日：2016-07-19
申请人： APPLIED MATERIALS, INC.
发明人： KAWASAKI, Katsumasa , SHOJI, Sergio Fukuda , PHI, Justin , SHIMIZU, Daisuke
IPC分类号： H01J37/32 , H05H1/46 , H03K4/08
CPC分类号： H05H1/46 , H01J37/32146 , H01J37/32174 , H01J37/32183 , H01L21/3065 , H05H2001/4682
摘要： Methods of operating a plasma enhanced substrate processing system using multi-level pulsed RF power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using multi-level pulsed RF power includes providing a first multi-level RF power waveform to a process chamber, the first multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration, and providing, after a first delay period, a second multi-level RF power waveform to the process chamber, the second multi-level RF power waveform having at least a first power level during a first pulse duration, a second power level during a second pulse duration, and a third power level during a third pulse duration.
摘要翻译：本文提供了使用多级脉冲RF功率来操作等离子体增强衬底处理系统的方法。在一些实施例中，使用多级脉冲RF功率来操作等离子体增强衬底处理系统的方法包括向处理室提供第一多级RF功率波形，第一多级RF功率波形具有至少第一功率在第一脉冲持续时间期间的电平，在第二脉冲持续期间的第二功率电平，以及在第三脉冲持续期间的第三功率电平，以及在第一延迟周期之后，向所述处理室提供第二多电平RF功率波形，所述第二多级RF功率波形在第一脉冲持续时间期间具有至少第一功率电平，在第二脉冲持续时间期间具有第二功率电平，以及在第三脉冲持续时间期间具有第三功率电平。

4. 发明申请

WO2012005881A2 METHODS AND APPARATUS FOR RADIO FREQUENCY (RF) PLASMA PROCESSING 审中-公开
标题翻译：用于射频（RF）等离子体处理的方法和设备
公开(公告)号：WO2012005881A2
公开(公告)日：2012-01-12
申请号：PCT/US2011/040189
申请日：2011-06-13
申请人： APPLIED MATERIALS, INC. , KAWASAKI, Katsumasa , LIAO, Bryan
发明人： KAWASAKI, Katsumasa , LIAO, Bryan
IPC分类号： H05H1/46 , H03H7/40
CPC分类号： H01J37/32082 , H01J37/32183 , H01J37/3299 , H03H7/38 , H03H7/46
摘要： Methods and apparatus for minimizing reflected radio frequency (RF) energy are provided herein. In some embodiments, an apparatus may include a first RF energy source having frequency tuning to provide a first RF energy, a first matching network coupled to the first RF energy source, one or more sensors to provide first data corresponding to a first magnitude and a first phase of a first impedance of the first RF energy, wherein the first magnitude is equal a first resistance defined as a first voltage divided by a first current and the first phase is equal to a first phase difference between the first voltage and the first current, and a controller adapted to control a first value of a first variable element of the first matching network based upon the first magnitude and to control a first frequency provided by the first RF energy source based upon the first phase.
摘要翻译：本文提供了用于最小化反射射频（RF）能量的方法和设备。在一些实施例中，装置可以包括具有频率调谐以提供第一RF能量的第一RF能量源，耦合到第一RF能量源的第一匹配网络，提供对应于第一量值的第一数据的一个或多个传感器和所述第一RF能量的第一阻抗的第一相，其中所述第一量值等于定义为第一电压除以第一电流的第一电阻，并且所述第一相等于所述第一电压与所述第一电流之间的第一相差以及控制器，其适于基于所述第一量值来控制所述第一匹配网络的第一可变元件的第一值并且基于所述第一相位来控制由所述第一RF能量源提供的第一频率。

5. 发明申请

WO2018169631A1 SMART RF PULSING TUNING USING VARIABLE FREQUENCY GENERATORS 审中-公开
公开(公告)号：WO2018169631A1
公开(公告)日：2018-09-20
申请号：PCT/US2018/017980
申请日：2018-02-13
申请人： APPLIED MATERIALS, INC.
发明人： KAWASAKI, Katsumasa
IPC分类号： H01J37/32
摘要： Methods and systems for RF pulse reflection reduction are provided herein. In some embodiments, a method includes (a) receiving a process recipe for processing the substrate that includes a plurality of pulsed RF power waveforms from a plurality of RF generators during a first duty cycle, (b) dividing the first duty cycle into a plurality of equal time intervals, (c) for each RF generator, determining a frequency command set for all intervals and send the frequency command set to the RF generator, wherein the frequency command set includes a frequency set point for each of the intervals in the plurality of equal time intervals, and (d) providing a plurality of RF power waveforms from a plurality of RF generators to a process chamber during a first duty cycle according to the frequency command set sent to each RF generator.

6. 发明申请

WO2017065855A1 RF PULSE REFLECTION REDUCTION FOR PROCESSING SUBSTRATES 审中-公开
标题翻译：射频脉冲反射降低处理基板
公开(公告)号：WO2017065855A1
公开(公告)日：2017-04-20
申请号：PCT/US2016/042952
申请日：2016-07-19
申请人： APPLIED MATERIALS, INC.
发明人： KAWASAKI, Katsumasa
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/32183 , H01J37/32146 , H01J37/32155 , H01J37/3299
摘要： Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.
摘要翻译：本文提供了用于在处理室中减少RF脉冲反射的方法和系统。在一些实施例中，一种方法包括（a）在第一时间段期间提供来自多个RF发生器的多个脉冲RF功率波形，（b）确定多个脉冲RF功率波形中的每一个的初始反射功率曲线，（c）对于所述多个脉冲RF功率波形中的每一个，确定最高水平的反射功率，并且控制匹配网络或RF发生器中的至少一个以降低最高水平的反射功率，（d）确定调整（e）重复（c）和（d），直到针对多个脉冲RF功率波形中的每一个的经调整的反射功率分布在阈值调整范围内为止。 p>

7. 发明申请

WO2017062083A1 RF POWER DELIVERY REGULATION FOR PROCESSING SUBSTRATES 审中-公开
标题翻译：用于处理基板的RF电力输送调节
公开(公告)号：WO2017062083A1
公开(公告)日：2017-04-13
申请号：PCT/US2016/042951
申请日：2016-07-19
申请人： APPLIED MATERIALS, INC.
发明人： KAWASAKI, Katsumasa , PHI, Justin , SHOJI, Sergio
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32146 , H01J37/32165 , H01J37/32183 , H01J37/3244 , H01J2237/334
摘要： Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.
摘要翻译：本文提供了使用脉冲射频（RF）功率来操作等离子体增强衬底处理系统的方法。在一些实施例中，使用脉冲射频（RF）功率来操作等离子体增强衬底处理系统的方法包括在第一时间段内以第一功率电平向处理室提供第一脉冲RF功率波形，提供第二脉冲RF 获得由在第一时间段期间提供的第一和第二脉冲RF功率波形产生的第一反射功率，以及执行第一负载调平处理以调整第一时间周期的第一和第二脉冲RF功率波形，第一脉冲RF功率波形的功率电平，以补偿在第一时间段期间获得的反射功率，以产生预设功率电平的输出功率。

8. 发明申请

WO2015034590A1 METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES 审中-公开
标题翻译：使用同步RF脉冲蚀刻材料的方法
公开(公告)号：WO2015034590A1
公开(公告)日：2015-03-12
申请号：PCT/US2014/048497
申请日：2014-07-28
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Jong Mun , SHIMIZU, Daisuke , KAWASAKI, Katsumasa , SHOJI, Sergio Fukuda
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32091 , H01J2237/334 , H01L21/31116
摘要： Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.
摘要翻译：本发明的实施例提供了使用同步RF脉冲来蚀刻材料层的方法。在一个实施例中，一种方法包括将气体混合物提供到处理室中，在第一时间点将第一RF源功率施加到处理室以在气体混合物中形成等离子体，在第二时间施加第一RF偏置功率指向处理室，以对基板执行蚀刻处理，在第三时间点关闭第一RF偏置功率，同时从第一时间点到第二和第三时间点连续地保持第一RF源电源的接通，以及在第四时间点关闭第一RF源功率，同时从第一时间点到第二，第三和第四时间点连续地将气体混合物提供到处理室。

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