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1. 发明申请

WO2015026506A1 METHODS FOR FORMING FEATURES IN A MATERIAL LAYER UTILIZING A COMBINATION OF A MAIN ETCHING AND A CYCLICAL ETCHING PROCESS 审中-公开
标题翻译：使用主要蚀刻和循环蚀刻过程的组合的材料层中形成特征的方法
公开(公告)号：WO2015026506A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/049361
申请日：2014-08-01
申请人： APPLIED MATERIALS, INC.
发明人： LING, Mang-Mang , KO, Jungmin , KANG, Sean , PENDER, Jeremiah T. , NEMANI, Srinivas D. , HOWARD, Bradley J.
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01J2237/334 , H01L21/76802
摘要： Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.
摘要翻译：提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

2. 发明申请

WO2016122893A1 CHAMBER BODY DESIGN ARCHITECTURE FOR NEXT GENERATION ADVANCED PLASMA TECHNOLOGY 审中-公开
标题翻译：下一代高级等离子体技术的室内设计体系结构
公开(公告)号：WO2016122893A1
公开(公告)日：2016-08-04
申请号：PCT/US2016/013440
申请日：2016-01-14
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , HOWARD, Bradley J. , BRIGHT, Nicholas J.
IPC分类号： H01J37/32
CPC分类号： F16J10/02 , H01J37/32834 , H01J37/32899
摘要： An apparatus for processing a substrate is disclosed and includes, in one embodiment, a twin chamber housing having two openings formed therethrough, a first pump interface member coaxially aligned with one of the two openings formed in the twin chamber housing, and a second pump interface member coaxially aligned with another of the two openings formed in the twin chamber housing, wherein each of the pump interface members include three channels that are concentric with a centerline of the two openings.
摘要翻译：公开了一种用于处理衬底的装置，并且在一个实施例中包括具有穿过其形成的两个开口的双室壳体，与形成在双室壳体中的两个开口中的一个共轴对准的第一泵接口构件，以及第二泵接口构件与形成在双室壳体中的两个开口中的另一个共轴对准，其中每个泵接口构件包括与两个开口的中心线同心的三个通道。

3. 发明申请

WO2015041747A1 METHODS FOR ETCHING AN ETCHING STOP LAYER UTILIZING A CYCLICAL ETCHING PROCESS 审中-公开
标题翻译：用于蚀刻循环蚀刻过程的蚀刻停止层的方法
公开(公告)号：WO2015041747A1
公开(公告)日：2015-03-26
申请号：PCT/US2014/048550
申请日：2014-07-29
申请人： APPLIED MATERIALS, INC.
发明人： LING, Mang-Mang , KANG, Sean , PENDER, Jeremiah T. , NEMANI, Srinivas D. , HOWARD, Bradley J.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J2237/334 , H01L21/76802 , H01L21/76826 , H01L21/76829
摘要： Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.
摘要翻译：提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。

4. 发明申请

WO2015105673A1 RECESSING ULTRA-LOW K DIELECTRIC USING REMOTE PLASMA SOURCE 审中-公开
标题翻译：使用远程等离子体源记录超低K电介质
公开(公告)号：WO2015105673A1
公开(公告)日：2015-07-16
申请号：PCT/US2014/071662
申请日：2014-12-19
申请人： APPLIED MATERIALS, INC.
发明人： LING, Mang Mang , KANG, Sean S. , PENDER, Jeremiah T P , NEMANI, Srinivas D. , HOWARD, Bradley J.
IPC分类号： H01L21/3065
CPC分类号： H01B19/04 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J2237/334
摘要： A portion of the ultra-low k dielectric layer over a substrate is modified using a downstream plasma comprising a first chemistry. The modified portion of the ultra-low k dielectric layer is etched using the downstream plasma comprising a second chemistry. The downstream plasma is generated using a remote plasma source.
摘要翻译：使用包含第一化学物质的下游等离子体改变衬底上的超低k电介质层的一部分。使用包含第二化学物质的下游等离子体蚀刻超低k电介质层的改性部分。使用远程等离子体源产生下游等离子体。

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