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1. 发明申请

WO2007048904A8 DEVICE FOR MAKING A SILICON RIBBON OR OF OTHER CRYSTALLINE MATERIALS AND MANUFACTURING METHOD 审中-公开
标题翻译：制造硅胶或其他结晶材料的装置和制造方法
公开(公告)号：WO2007048904A8
公开(公告)日：2008-06-19
申请号：PCT/FR2006002349
申请日：2006-10-19
申请人： APOLLON SOLAR , CYBERSTAR , EINHAUS ROLAND , LISSALDE FRANCOIS , LAUVRAY HUBERT
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , LAUVRAY HUBERT
IPC分类号： H01L31/18
CPC分类号： H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1092
摘要： The invention concerns a device comprising a crucible (1) having a base (2) and side walls. The crucible (1) comprises at least one lateral slot (4) arranged horizontally at a lower part of the side walls (3). The lateral slot (4) has a width greater than 50 mm and, preferably, ranging between 100 mm and 500 mm. The height (H) of the slot (4) ranges between 50 and 1000 micrometers. The crystalline material exits the crucible through the lateral slot (4) so as to form a crystalline ribbon (R). The method includes a step of contacting a crystallization nucleus with the material exiting through the lateral slot (4) and a step of moving horizontally the ribbon (R).
摘要翻译：本发明涉及包括具有基座（2）和侧壁的坩埚（1）的装置。坩埚（1）包括在侧壁（3）的下部水平布置的至少一个侧向槽（4）。横向槽（4）的宽度大于50mm，优选在100mm与500mm之间。槽（4）的高度（H）在50和1000微米之间。结晶材料通过横向槽（4）离开坩埚以形成结晶带（R）。该方法包括使结晶核与通过横向槽（4）排出的材料接触的步骤和水平地移动带（R）的步骤。

2. 发明申请

WO2008132323A3 DEVICE AND METHOD FOR PRODUCING SELF-SUSTAINED PLATES OF SILICON OR OTHER CRYSTALLINE MATERIALS 审中-公开
标题翻译：用于生产硅或其他结晶材料的自支撑板的装置和方法
公开(公告)号：WO2008132323A3
公开(公告)日：2010-10-21
申请号：PCT/FR2008000304
申请日：2008-03-07
申请人： APOLLON SOLAR , CYBERSTAR , CENTRE NAT RECH SCIENT , INST POLYTECHNIQUE GRENOBLE , EINHAUS ROLAND , LISSALDE FRANCOIS , DELANNOY YVES
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , DELANNOY YVES
IPC分类号： C30B11/00 , C30B29/06 , C30B29/60
CPC分类号： C30B11/001 , C30B11/002 , C30B11/007 , C30B15/06 , C30B15/34 , C30B29/06 , H01L31/18 , Y10T117/1024
摘要： The invention relates to a device for making a plate (8) of a crystalline material by the directed crystallisation of a liquid-phase material (5), that comprises at least one crucible (1) with a bottom (2), side walls (3) and at least one horizontal outlet slot (4) provided on a lower portion of a side wall (3). The crucible (1) comprises, on its outer surface and in the immediate vicinity of the slot (4), electromagnetic means (6) for generating, at least at the slot (4), magnetic repulsion forces on the liquid-phase material (5). An alternating current with a frequency between 10kHz and 300kHz flows through the electromagnetic means (6). In order to promote the agitation of the liquid-phase material (5), a low frequency can be superimposed to the former.
摘要翻译：本发明涉及一种用于通过液相材料（5）的定向结晶来制造结晶材料的板（8）的装置，其包括至少一个具有底部（2）的坩埚（1），侧壁（ 3）和设置在侧壁（3）的下部上的至少一个水平出口槽（4）。所述坩埚（1）在其外表面上并在所述槽（4）的紧邻附近包括用于至少在所述槽（4）处产生液相材料上的磁力排斥力的电磁装置（6） 5）。频率在10kHz和300kHz之间的交流电流流过电磁装置（6）。为了促进液相材料（5）的搅拌，可以将低频率叠加到前者。

3. 发明申请

WO2004094704A3 CRUCIBLE FOR A DEVICE USED FOR THE PRODUCTION OF A BLOCK OF CRYSTALLINE MATERIAL, AND PRODUCTION METHOD 审中-公开
标题翻译：可用于生产晶体块材料的生产方法和生产方法
公开(公告)号：WO2004094704A3
公开(公告)日：2004-12-16
申请号：PCT/FR2004000894
申请日：2004-04-09
申请人： APOLLON SOLAR , CYBERSTAR , EFD INDUCTION SA , EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
IPC分类号： C30B11/00
CPC分类号： C30B29/605 , C30B11/002 , Y10S65/08 , Y10S117/90 , Y10T117/10 , Y10T117/1052
摘要： Disclosed is a crucible, the thermal transfer properties of the bottom (7) of which are much greater than those of the sidewalls (8) parallel to an axis extending substantially perpendicular to the bottom (7). Said bottom (7) and the sidewalls (8) are made of materials that are provided with the same main chemical components. The bottom (7) can be transparent to infrared radiation while the sidewalls (8) can be opaque to infrared radiation. The bottom (7) can be made of amorphous silica while the sidewalls (8) can be made of a ceramic material consisting of opaque quartz. The crucible can also be made of graphite. The device can comprise a graphite felt (9) that is disposed between the bottom (7) of the crucible and cooling means (4), and means (10) for compressing the graphite felt (9), allowing a thermal gradient ranging between 8 DEG C/cm and 30 DEG C/cm to be defined in the liquid phase.
摘要翻译：公开了一种坩埚，其底部（7）的热传递特性比平行于基本上垂直于底部（7）的轴线的侧壁（8）的热传递特性大得多。所述底部（7）和侧壁（8）由具有相同主要化学成分的材料制成。底部（7）对于红外辐射可以是透明的，而侧壁（8）对红外辐射是不透明的。底部（7）可以由无定形二氧化硅制成，而侧壁（8）可以由不透明石英组成的陶瓷材料制成。坩埚也可以由石墨制成。该装置可以包括设置在坩埚的底部（7）和冷却装置（4）之间的石墨毡（9）和用于压缩石墨毡（9）的装置（10），允许在8 在液相中定义为DEGC / cm和30℃/ cm。

4. 发明专利

ES2279402T5 CRISOL PARA UN DISPOSITIVO DE FABRICACION DE UN BLOQUE DE MATERIAL CRISTALINO Y PROCEDIMIENTO DE FABRICACION. 未知
公开(公告)号：ES2279402T5
公开(公告)日：2010-10-08
申请号：ES04742479
申请日：2004-04-09
申请人： APOLLON SOLAR , CYBERSTAR , EFD INDUCTION SA
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
IPC分类号： C30B11/00
摘要： Crisol para un dispositivo de fabricación de un bloque de material cristalino por cristalización dirigida, que presenta paredes laterales (8) y un fondo (7), teniendo el fondo (7), paralelamente a un eje casi perpendicular al fondo (7), propiedades de transferencia térmica muy superiores a las de las paredes laterales (8) según dicho eje, crisol caracterizado porque el fondo (7) y las paredes laterales (8) están constituidos por materiales que tienen los mismos constituyentes químicos principales.

5. 发明专利

AT350519T 未知
公开(公告)号：AT350519T
公开(公告)日：2007-01-15
申请号：AT04742479
申请日：2004-04-09
申请人： APOLLON SOLAR , CYBERSTAR , EFD INDUCTION SA
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
IPC分类号： C30B11/00

6. 发明专利

FR2853913B1 未知
公开(公告)号：FR2853913B1
公开(公告)日：2006-09-29
申请号：FR0304803
申请日：2003-04-17
申请人： APOLLON SOLAR , CYBERSTAR , SILAC
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
IPC分类号： C30B35/00 , C30B11/00 , C30B28/06

7. 发明专利

FR2913434A1 DISPOSITIF ET PROCEDE DE FABRICATION DE PLAQUES AUTOSUPPORTEES DE SILICIUM OU AUTRES MATERIAUX CRISTALLINS. 未知
公开(公告)号：FR2913434A1
公开(公告)日：2008-09-12
申请号：FR0701701
申请日：2007-03-08
申请人： APOLLON SOLAR SOC PAR ACTIONS , CYBERSTAR , CENTRE NAT RECH SCIENT
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , DELANNOY YVES
IPC分类号： C30B13/30 , H01L31/042 , H01L31/18
摘要： Le dispositif de fabrication d'une plaque (8) de matériau cristallin par cristallisation dirigée d'un matériau en phase liquide (5) comporte un creuset (1) muni d'un fond (2), de parois latérales (3) et d'au moins une fente (4) horizontale disposée sur une partie inférieure d'une paroi latérale (3). Le creuset (1 ) présente, sur sa surface extérieure, à proximité immédiate de la fente (4), des moyens électromagnétiques (6) de création, au moins au niveau de la fente (4), de forces de répulsion magnétiques sur le matériau en phase liquide (5). Les moyens électromagnétiques (6), sont parcourus par un courant alternatif dont la fréquence est comprise entre 10kHz et 300kHz. Pour favoriser le brassage du matériau en phase liquide (5), une basse fréquence peut être superposée à la précédente.

8. 发明专利

NO20083111A 未知
公开(公告)号：NO20083111A
公开(公告)日：2008-09-01
申请号：NO20083111
申请日：2008-07-11
申请人： APOLLON SOLAR
发明人： EINHAUS ROLAND , RIVAT PASCAL , LISSALDE FRANCOIS
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/003 , C30B11/002 , Y10T117/10 , Y10T117/102 , Y10T117/1024 , Y10T117/1068 , Y10T117/1088

9. 发明专利

FR2895749B1 未知
公开(公告)号：FR2895749B1
公开(公告)日：2008-05-02
申请号：FR0600049
申请日：2006-01-04
申请人： APOLLON SOLAR SOC PAR ACTIONS , CYBERSTAR , EFD INDUCTION SA
发明人： EINHAUS ROLAND , LISSALDE FRANCOIS , RIVAT PASCAL
IPC分类号： C30B11/00
摘要： A device for producing a block of crystalline material comprises a heat source (3) and a cooling system arranged to establish a thermal gradient in a crystallization crucible (1), silica plates arranged around an induction turn (10), and a removable felt arranged above the exchanger. The system comprises an exchanger (17), an adjustable source, an induction turn, and an electrically conducting induction susceptor (11) placed between the crucible and the induction turn. The induction turn is cooled by a coolant circulating within the induction turn. The device for producing block of crystalline material, comprises a heat source (3) and a cooling system arranged to establish thermal gradient in a crystallization crucible (1), silica plates arranged around an induction turn (10), and a removable felt arranged above the exchanger. The system comprises an exchanger (17), an adjustable source, an induction turn, and an electrically conducting induction susceptor (11) placed between the crucible and the induction turn. The induction turn is cooled by a coolant circulating within the induction turn. The susceptor is arranged in a thermally conducting material and an infra-red radiation absorbent in which the susceptor is made of graphite or silicon carbide. The susceptor comprises a support for the crucible, and low electric surface conductivity zones to reduce the heating of induction and to enhance the dissipation of heat of the crucible towards the induction turn. The low electric surface conductivity zones are consisted by holes, a material having a low electric conductivity than the susceptor material or a zone having a lower thickness than the susceptor. The crucible comprises a transparent bottom of amorphous silica without impurities. An independent claim is included for the production of a block of crystalline material.

10. 发明专利

CA2626063A1 DEVICE FOR MAKING A SILICON RIBBON OR OF OTHER CRYSTALLINE MATERIALS AND MANUFACTURING METHOD 未知
公开(公告)号：CA2626063A1
公开(公告)日：2007-05-03
申请号：CA2626063
申请日：2006-10-19
申请人： APOLLON SOLAR , CYBERSTAR
发明人： LISSALDE FRANCOIS , LAUVRAY HUBERT , EINHAUS ROLAND
IPC分类号： H01L31/18
摘要： The device comprises a crucible (1) having a bottom (2) and side walls (3). The crucible (1) comprises at least one lateral slit (4) arranged horizontally at a bottom part of the side walls (3). The lateral slit (4) presents a width of more than 50 mm and preferably comprised between 100 mm and 500 mm. The height (H) of the slit (4) is comprised between 50 and 1000 micrometers. The crystalline material is output from the crucible via the lateral slit (4) so as to form a crystalline ribbon (R). The method comprises a step of bringing a crystallization seed into contact with the material output via the lateral slit (4) and a horizontal displacement step of the ribbon (R).

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